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Materials Science

D-Index
57
Citations
10340
World Ranking
8037
National Ranking
466

Overview

Erich Kasper is affiliated with the University of Stuttgart in Germany and focuses research efforts primarily within the fields of Engineering and Physics and Astronomy. Their work spans various subfields, including Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, Aerospace Engineering, and Control and Systems Engineering.

The scientist's research topics prominently cover Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Nanowire Synthesis and Applications, Millimeter-Wave Propagation and Modeling, Advanced Photonic Communication Systems, Semiconductor Lasers and Optical Devices, and Silicon Nanostructures and Photoluminescence.

Recent papers authored or co-authored by Erich Kasper reflect these topics and subfields. Some of the notable publications include:

  • Direct-indirect GeSn band structure formation by laser Radiation: The enhancement of Sn solubility in Ge (2020) published in Optics & Laser Technology
  • Two-dimensional hole gases in SiGeSn alloys (2022) published in Semiconductor Science and Technology
  • A Software-Adaptive 77GHz Radar Sensor for Traffic Applications (2021) presented at the 2021 IEEE MTT-S International Wireless Symposium (IWS)
  • Passive and Active Verification of Serial-Fed Patch Antenna Array for 77 GHz Automotive Corner Radar (2020) presented at the 2020 IEEE MTT-S International Wireless Symposium (IWS)
  • Group-IV based pin photodetectors for C-band application (2024) published in Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Frequent co-authors collaborating with Erich Kasper include Michael Oehme, Daniel Schwarz, Maurice Wanitzek, Christian Spieth, and Lukas Seidel. These collaborations have resulted in multiple publications, particularly in venues such as Optics & Laser Technology, Semiconductor Science and Technology, IEEE MTT-S International Wireless Symposium, Journal of Vacuum Science & Technology B, and Materials Science in Semiconductor Processing.

Best Publications

  • Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

    M. Jutzi;M. Berroth;G. Wohl;M. Oehme

  • The n-channel SiGe/Si modulation-doped field-effect transistor

    H. Daembkes;H.-J. Herzog;H. Jorke;H. Kibbel

  • Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

    J. Werner;M. Oehme;M. Schmid;M. Kaschel

  • Photoluminescence in short-period Si/Ge strained-layer superlattices.

    Zachai R;Eberl K;Abstreiter G;Kasper E

  • A one-dimensional SiGe superlattice grown by UHV epitaxy

    Unknown

  • Electrically pumped lasing from Ge Fabry-Perot resonators on Si.

    Roman Koerner;Michael Oehme;Martin Gollhofer;Marc Schmid

  • Properties of Silicon Germanium and SiGe: Carbon

    Erich Kasper;Klara Lyutovich

  • High bandwidth Ge p-i-n photodetector integrated on Si

    M. Oehme;J. Werner;E. Kasper;M. Jutzi

  • Germanium tin: silicon photonics toward the mid-infrared [Invited]

    E. Kasper;M. Kittler;M. Oehme;T. Arguirov

  • Symmetrically strained Si/Ge superlattices on Si substrates.

    E. Kasper;H. Kibbel;H. Jorke;H. Brugger

  • Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz

    S. Klinger;M. Berroth;M. Kaschel;M. Oehme

  • Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

    Michael Oehme;Konrad Kostecki;Marc Schmid;Filipe Oliveira

  • Growth of silicon based germanium tin alloys

    E. Kasper;J. Werner;M. Oehme;S. Escoubas

  • Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates

    Unknown

  • Attenuation mechanisms of aluminum millimeter-wave coplanar waveguides on silicon

    C. Schollhorn;Weiwei Zhao;M. Morschbach;E. Kasper

  • New virtual substrate concept for vertical MOS transistors

    Erich Kasper;Klara Lyutovich;Matthias Bauer;Michael Oehme

  • Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si

    M. Oehme;J. Werner;M. Gollhofer;M. Schmid

  • Test of Vegard's law in thin epitaxial SiGe layers

    E. Kasper;A. Schuh;G. Bauer;B. Holländer

  • Silicon High Resistivity Substrate Millimeter-Wave Technology

    J. Buechler;E. Kasper;P. Russer;K.M. Strohm

  • Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance

    U. Konig;A.J. Boers;F. Schaffler;E. Kasper

  • GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz.

    Michael Oehme;Konrad Kostecki;Kaiheng Ye;Stefan Bechler

  • MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/

    Unknown

  • Growth kinetics of Si-molecular beam epitaxy

    Unknown

  • Photoluminescence in short period Si/Ge strained layer superlattices grown on Si and Ge substrates

    R. Zachai;K. Eberl;G. Abstreiter;E. Kasper

Frequent Co-Authors

Jürgen H. Werner
Jürgen H. Werner University of Stuttgart
Mikael Östling
Mikael Östling Royal Institute of Technology
Peter Russer
Peter Russer Technical University of Munich
Gerhard Abstreiter
Gerhard Abstreiter Technical University of Munich
Sanatan Chattopadhyay
Sanatan Chattopadhyay University of Calcutta
S. Mantl
S. Mantl Forschungszentrum Jülich
Jean-Pierre Raskin
Jean-Pierre Raskin Université Catholique de Louvain
Friedrich Schäffler
Friedrich Schäffler Johannes Kepler University of Linz
Frank Ernst
Frank Ernst Case Western Reserve University
Karl Eberl
Karl Eberl Dr. Eberl MBE-Komponenten GmbH

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