World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
10521
World Ranking
2101
National Ranking
824

Materials Science

D-Index
57
Citations
10660
World Ranking
8013
National Ranking
1987

Greg Sun publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Greg Sun sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 241 publications — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Greg Sun D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Greg Sun sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 56 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2020 - OSA Fellows Greg Sun University of Massachusetts Boston, USA For technical innovation and seminal work in optoelectronics, Si photonics and plasmonics

Overview

Greg Sun is affiliated with the University of Massachusetts Boston in the United States and has a research focus within the field of engineering, specifically electrical and electronic engineering, atomic and molecular physics and optics, biomedical engineering, materials chemistry, and electronic, optical, and magnetic materials. The primary areas of work include photonic and optical devices, advanced photonic communication systems, advanced fiber optic sensors, semiconductor lasers and optical devices, nanowire synthesis and applications, photonic crystals and applications, and mechanical and optical resonators.

Recent publications by Greg Sun include the following:

  • Electrically injected GeSn lasers on Si operating up to 100 K, 2020, Optica
  • Electrically injected GeSn lasers with peak wavelength up to 2.7 μm, 2021, Photonics Research
  • GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2 µm wavelength band, 2020, Optics Letters
  • Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors, 2021, IEEE Journal of Selected Topics in Quantum Electronics
  • Planar GeSn photodiode for high-detectivity photodetection at 1550 nm, 2020, Applied Physics Letters

Greg Sun frequently collaborates with colleagues including Richard Soref, Guo-En Chang, Shui-Qing Yu, Wei Du, and Hung-Hsiang Cheng. These collaborations contribute to the development and publication of research predominantly in the engineering and photonics domains.

Publication venues where Greg Sun's work appears regularly include:

  • SSRN Electronic Journal
  • arXiv (Cornell University)
  • Applied Physics Letters
  • Sensors
  • Preprints.org

In 2020, Greg Sun was recognized as an OSA Fellow for contributions in optoelectronics, silicon photonics, and plasmonics.

Best Publications

  • High-Efficiency Broadband Meta-Hologram with Polarization-Controlled Dual Images

    Wei Ting Chen;Kuang-Yu Yang;Chih-Ming Wang;Yao-Wei Huang

  • Aluminum Plasmonic Multicolor Meta-Hologram

    Yao Wei Huang;Wei Ting Chen;Wei Yi Tsai;Pin Chieh Wu

  • Versatile Polarization Generation with an Aluminum Plasmonic Metasurface

    Pin Chieh Wu;Wei Yi Tsai;Wei Ting Chen;Yao Wei Huang

  • Active dielectric metasurface based on phase-change medium

    Cheng Hung Chu;Ming Lun Tseng;Jie Chen;Pin Chieh Wu;Pin Chieh Wu

  • Advances in optical metasurfaces: fabrication and applications [Invited]

    Vin-Cent Su;Cheng Hung Chu;Greg Sun;Din Ping Tsai

  • An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

    Sattar Al-Kabi;Seyed Amir Ghetmiri;Joe Margetis;Thach Pham

  • Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

    Seyed Amir Ghetmiri;Wei Du;Joe Margetis;Aboozar Mosleh

  • Metalenses: Advances and Applications

    Ming Lun Tseng;Ming Lun Tseng;Hui Hsin Hsiao;Hui Hsin Hsiao;Cheng Hung Chu;Cheng Hung Chu;Mu Ku Chen;Mu Ku Chen

  • Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

    Huong Tran;Huong Tran;Thach Pham;Thach Pham;Joe Margetis;Yiyin Zhou;Yiyin Zhou

  • Electrically injected GeSn lasers on Si operating up to 100 K

    Yiyin Zhou;Yuanhao Miao;Solomon Ojo;Huong Tran

  • Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

    Joe Margetis;Sattar Al-Kabi;Wei Du;Wei Du;Wei Dou

  • Practicable enhancement of spontaneous emission using surface plasmons

    Greg Sun;Jacob B. Khurgin;Richard A. Soref

  • GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

    H. H. Tseng;H. Li;V. Mashanov;Y. J. Yang

  • Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

    Unknown

  • Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode.

    G. Sun;R. A. Soref;H. H. Cheng

  • Practical enhancement of photoluminescence by metal nanoparticles

    Greg Sun;Jacob B. Khurgin;R. A. Soref

  • Comparative analysis of spasers, vertical-cavity surface-emitting lasers and surface-plasmon-emitting diodes

    Jacob B. Khurgin;Greg Sun

  • In search of the elusive lossless metal

    Jacob B. Khurgin;Greg Sun

  • Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

    Huong Tran;Wei Du;Seyed A. Ghetmiri;Aboozar Mosleh

  • Scaling of losses with size and wavelength in nanoplasmonics and metamaterials

    Jacob B. Khurgin;Greg Sun

  • Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

    Thach Pham;Wei Du;Huong Tran;Joe Margetis

  • Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

    H. H. Tseng;K. Y. Wu;H. Li;V. Mashanov

  • Si-based GeSn photodetectors towards mid-infrared imaging applications

    Huong Tran;Thach Pham;Joe Margetis;Yiyin Zhou

Frequent Co-Authors

Richard A. Soref
Richard A. Soref University of Massachusetts Boston
Wei Du
Wei Du University of Arkansas at Fayetteville
Shui-Qing Yu
Shui-Qing Yu University of Arkansas at Fayetteville
Din Ping Tsai
Din Ping Tsai City University of Hong Kong
John Tolle
John Tolle Arizona State University
Jacob B. Khurgin
Jacob B. Khurgin Johns Hopkins University
Jifeng Liu
Jifeng Liu Dartmouth College
Ai Qun Liu
Ai Qun Liu Hong Kong Polytechnic University
Nikolay I. Zheludev
Nikolay I. Zheludev University of Southampton
Hai-Pang Chiang
Hai-Pang Chiang National Taiwan Ocean University

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