World's Best Scientists 2026 revealed!
Sanatan Chattopadhyay

Sanatan Chattopadhyay

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
3518
World Ranking
6630
National Ranking
102

Sanatan Chattopadhyay publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sanatan Chattopadhyay sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 202 publications — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sanatan Chattopadhyay D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sanatan Chattopadhyay sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 31 D-Index — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Best Publications

  • Comparative Performance Analysis of the Dielectrically Modulated Full- Gate and Short-Gate Tunnel FET-Based Biosensors

    Unknown

  • Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors

    Unknown

  • Strained-Si heterostructure field effect transistors

    Unknown

  • A model for capacitance reconstruction from measured lossy MOS capacitance–voltage characteristics

    Unknown

  • High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

    S.H. Olsen;A.G. O'Neill;L.S. Driscoll;K.S.K. Kwa

  • Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

    G.K. Dalapati;S. Chattopadhyay;K.S.K. Kwa;S.H. Olsen

  • 2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

    Unknown

  • Physical and electrochemical characterization of reduced graphene oxide/silver nanocomposites synthesized by adopting a green approach

    Indranil Roy;Dipak Rana;Gunjan Sarkar;Amartya Bhattacharyya

  • Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time

    Unknown

  • Synthesis and characterization of graphene from waste dry cell battery for electronic applications

    Indranil Roy;Gunjan Sarkar;Soumya Mondal;Dipak Rana

  • Green synthesis of cadmium oxide decorated reduced graphene oxide nanocomposites and its electrical and antibacterial properties.

    Sourav Sadhukhan;Sourav Sadhukhan;Tapas Kumar Ghosh;Indranil Roy;Dipak Rana

  • Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate

    R. Mahapatra;Amit K. Chakraborty;N. Poolamai;A. Horsfall

  • Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

    S.H. Olsen;A.G. O'Neill;S. Chattopadhyay;L.S. Driscoll

  • FT-MIR supported Electrical Impedance Spectroscopy based study of sugar adulterated honeys from different floral origin

    Chirantan Das;Subhadip Chakraborty;Krishnendu Acharya;Nirmal Kumar Bera

  • Optical and electronic properties of chemical bath deposited p-CuO and n-ZnO nanowires on silicon substrates: p-CuO/n-ZnO nanowires solar cells with high open-circuit voltage and short-circuit current

    Unknown

  • Green synthesis of silver nanoparticles-based nanofluids and investigation of their antimicrobial activities

    Md. Masud Rahaman Mollick;Biplab Bhowmick;Dipanwita Maity;Dibyendu Mondal

  • Physical and electrical characterization of reduced graphene oxide synthesized adopting green route

    Tapas K Ghosh;Tapas K Ghosh;Shirshendu Gope;Dipak Rana;Indranil Roy

  • Selective sensing of dopamine by sodium cholate tailored polypyrrole-silver nanocomposite

    Arpita Adhikari;Sriparna De;Dipak Rana;Jyotishka Nath

  • A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors

    M. De Michielis;D. Esseni;Y.L. Tsang;P. Palestri

  • Characterization of nano-powder grown ultra-thin film p-CuO/n-Si hetero-junctions by employing vapour-liquid-solid method for photovoltaic applications

    Jenifar Sultana;Anindita Das;Avishek Das;Nayan Ranjan Saha

Frequent Co-Authors

Steve Bull
Steve Bull Newcastle University
Dipak Rana
Dipak Rana University of Ottawa
Samit K. Ray
Samit K. Ray Indian Institute of Technology Kharagpur
Erich Kasper
Erich Kasper University of Stuttgart
Mikael Östling
Mikael Östling Royal Institute of Technology
Douglas J. Paul
Douglas J. Paul University of Glasgow
Dongzhi Chi
Dongzhi Chi Agency for Science, Technology and Research
Krishnendu Acharya
Krishnendu Acharya University of Calcutta
Dibyendu Mondal
Dibyendu Mondal Jain University
A. G. Cullis
A. G. Cullis University of Sheffield

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