A. G. Cullis

Research.com Recognitions

• 2004 - Fellow of the Royal Society, United Kingdom

Overview

Best Publications

• The structural and luminescence properties of porous silicon

  A. G. Cullis;L. T. Canham;P. D. J. Calcott

  3545
  Citations

• Visible light emission due to quantum size effects in highly porous crystalline silicon

  A. G. Cullis;L. T. Canham

  1897
  Citations

• Hard-X-Ray Lensless Imaging of Extended Objects

  J. M. Rodenburg;A. C. Hurst;A. G. Cullis;B. R. Dobson

  1017
  Citations

• An experimental and theoretical study of the formation and microstructure of porous silicon

  M.I.J. Beale;J.D. Benjamin;M.J. Uren;N.G. Chew

  779
  Citations

• Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

  P W Fry;I E Itskevich;I E Itskevich;D J Mowbray;M S Skolnick

  727
  Citations

• Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

  Michael O. Thompson;G. J. Galvin;J. W. Mayer;P. S. Peercy

  685
  Citations

• Microstructure and formation mechanism of porous silicon

  M. I. J. Beale;N. G. Chew;M. J. Uren;A. G. Cullis

  402
  Citations

• Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs.

  T. Walther;A. G. Cullis;D. J. Norris;M. Hopkinson

  345
  Citations

• The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy

  R.F.C. Farrow;D.S. Robertson;G.M. Williams;A.G. Cullis

  322
  Citations

• Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation

  Michael O. Thompson;J. W. Mayer;A. G. Cullis;H. C. Webber

  311
  Citations

• Evolution of surface morphology and strain during SiGe epitaxy

  A.J. Pidduck;D.J. Robbins;A.G. Cullis;W.Y. Leong

  283
  Citations

• The characteristics of strain-modulated surface undulations formed upon epitaxial Si1−xGex alloy layers on Si

  A.G. Cullis;D.J. Robbins;A.J. Pidduck;P.W. Smith

  260
  Citations

• Luminescent anodized silicon aerocrystal networks prepared by supercritical drying

  L. T. Canham;A. G. Cullis;C. Pickering;O. D. Dosser

  255
  Citations

• Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots.

  M. J. Steer;D. J. Mowbray;W. R. Tribe;M. S. Skolnick

  235
  Citations

• Arsenic precipitation at dislocations in GaAs substrate material

  A. G. Cullis;P. D. Augustus;D. J. Stirland

  208
  Citations

• Transitions to Defective Crystal and the Amorphous State Induced in Elemental Si by Laser Quenching

  A. G. Cullis;H. C. Webber;N. G. Chew;J. M. Poate

  203
  Citations

• A model for heterogeneous growth of Si1−xGex films from hydrides

  D. J. Robbins;J. L. Glasper;A. G. Cullis;W. Y. Leong

  196
  Citations

• A device for laser beam diffusion and homogenisation

  A G Cullis;H C Webber;Paul Bailey

  185
  Citations

• Correlation of the structural and optical properties of luminescent, highly oxidized porous silicon

  A. G. Cullis;L. T. Canham;G. M. Williams;P. W. Smith

  184
  Citations

• Phase Transitions in Amorphous Si Produced by Rapid Heating

  P. Baeri;G. Foti;J. M. Poate;A. G. Cullis

  182
  Citations