2026 Emanuele Rimini: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	45	11641	11252	264	256	420	9641

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

11641

11252

264

256

420

9641

Research.com Recognitions

1994 - Fellow of American Physical Society (APS) Citation For his pioneering contributions to the fields of particlesolid and lasersolid interactions and his leadership in establishing research consortia

Overview

Emanuele Rimini is affiliated with the National Research Council (CNR) in Italy. Their research expertise primarily lies in the fields of Engineering and Materials Science, with a substantial focus on Electrical and Electronic Engineering and Materials Chemistry. They have also contributed to Biomedical Engineering, Ceramics and Composites, and Atmospheric Science subfields.

The main topics investigated by Emanuele Rimini include phase-change materials and chalcogenides, chalcogenide semiconductor thin films, nonlinear optical materials studies, glass properties and applications, semiconductor materials and devices, nanoparticles nucleation surface interactions, and ion-surface interactions and analysis.

The scientist has published research in several reputable venues, including:

Journal of Applied Physics
Materials Science in Semiconductor Processing
Materials & Design
Journal of Physics and Chemistry of Solids
Journal of Physics D Applied Physics

Frequent collaborators in their research include S. Privitera, Antonio Massimiliano Mio, Corrado Bongiorno, E. Carria, and Giuseppe D'Arrigo.

Among recent publications by Emanuele Rimini are:

"Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications," 2020, Journal of Applied Physics
"Ion beam irradiation of phase change materials: A route to material properties investigation and engineering," 2021, Materials Science in Semiconductor Processing
"Mechanical characterization and properties of continuous wave laser irradiated Ge2Sb2Te5 stripes," 2021, Materials & Design
"New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition," 2020, Journal of Physics and Chemistry of Solids
"Crystallization of nano amorphized regions in thin epitaxial layer of Ge₂Sb₂Te₅," 2020, Journal of Physics D Applied Physics

In recognition of their contributions, Emanuele Rimini was awarded the title of Fellow of the American Physical Society (APS) in 1994. The citation highlighted their pioneering work in particle-solid and laser-solid interactions and their leadership in establishing research consortia.

Best Publications

Ion Beam Handbook for Material Analysis

James W. Mayer;E. Rimini

651
Citations
A melting model for pulsing‐laser annealing of implanted semiconductors

P. Baeri;S. U. Campisano;G. Foti;E. Rimini

524
Citations
Ion irradiation and defect formation in single layer graphene

Giuseppe Compagnini;Filippo Giannazzo;Sushant Sonde;Vito Raineri

281
Citations
Ion-beam-induced epitaxial crystallization and amorphization in silicon

Francesco Priolo;Emanuele Rimini

259
Citations
Ion Implantation: Basics to Device Fabrication

Emanuele Rimini

251
Citations
Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements

S. Privitera;E. Rimini;R. Zonca

205
Citations
Voids in Silicon by He Implantation: From Basic to Applications

V. Raineri;M. Saggio;E. Rimini

198
Citations
Arsenic diffusion in silicon melted by high‐power nanosecond laser pulsing

P. Baeri;S. U. Campisano;G. Foti;E. Rimini

164
Citations
Silicon planar technology for single-photon optical detectors

E. Sciacca;A.C. Giudice;D. Sanfilippo;F. Zappa

141
Citations
Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy

F. Giannazzo;S. Sonde;V. Raineri;E. Rimini

137
Citations
He-vacancy interactions in Si and their influence on bubble formation and evolution

V. Raineri;S. Coffa;E. Szilágyi;J. Gyulai

134
Citations
Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Valeria Bragaglia;Fabrizio Arciprete;Wei Zhang;Wei Zhang;Antonio Massimiliano Mio

133
Citations
Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

Filippo Giannazzo;Sushant Sonde;Raffaella Lo Nigro;Emanuele Rimini

124
Citations
How far will silicon nanocrystals push the scaling limits of NVMs technologies

B. De Salvo;C. Gerardi;S. Lombardo;T. Baron

120
Citations
Mechanisms of amorphization in ion implanted crystalline silicon

S.U. Campisano;S. Coffa;V. Raineri;F. Priolo

111
Citations
Crystal nucleation and growth processes in Ge2Sb2Te5

S. Privitera;C. Bongiorno;E. Rimini;R. Zonca

109
Citations
Kinetics of phase formation in Au—A1 thin films

S. U. Campisano;G. Foti;E. Rimini;S. S. Lau

106
Citations
Segregation Effects in Cu-Implanted Si after Laser-Pulse Melting

P. Baeri;S. U. Campisano;G. Foti;E. Rimini

103
Citations
Crystallization and phase separation in Ge2+xSb2Te5 thin films

S. Privitera;E. Rimini;C. Bongiorno;R. Zonca

101
Citations
2 – Backscattering Spectrometry

G. Foti;J.W. Mayer;E. Rimini;S.U. Campisano

28
Citations
Silicon planar technology for single-photon optical detectors

Emilio Sciacca;Andrea C. Giudice;Delfo Sanfilippo;Salvatore Lombardo

13
Citations