Wei-Kan Chu

Overview

Best Publications

• Principles and applications of ion beam techniques for the analysis of solids and thin films

  W.K. Chu;J.W. Mayer;M-A. Nicolet;T.M. Buck

  420
  Citations

• Implanted noble gas atoms as diffusion markers in silicide formation

  W. K. Chu;S. S. Lau;J. W. Mayer;H. Müller

  311
  Citations

• Structure and growth kinetics of Ni2Si on silicon

  King-Ning Tu;W. K. Chu;J. W. Mayer

  261
  Citations

• Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications

  C. L. Chen;H. H. Feng;Z. Zhang;A. Brazdeikis

  254
  Citations

• Profiling hydrogen in materials using ion beams

  J.F. Ziegler;C.P. Wu;P. Williams;C.W. White

  227
  Citations

• Method for manufacture of ultra-thin film capacitor

  Arup Bhattacharyya;Wei-Kan Chu;James K. Howard;Francis W. Wiedman

  171
  Citations

• Comparative study of CdS thin films deposited by single, continuous, and multiple dip chemical processes

  I.O Oladeji;L Chow;J.R Liu;W.K Chu

  167
  Citations

• New uses of ion accelerators

  Thomas A. Cahill;James A. Cairns;Wei-Kan Chu;Billy L. Crowder

  166
  Citations

• Reactive ion etching of diamond

  G. S. Sandhu;W. K. Chu

  155
  Citations

• Stopping Cross Sections of Gases for α Particles from 0.3 to 2 MeV

  P.D. Bourland;W.K. Chu;D. Powers

  150
  Citations

• Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon

  K. Cho;M. Numan;T. G. Finstad;W. K. Chu

  148
  Citations

• Identification of the dominant diffusing species in silicide formation

  W. K. Chu;W. K. Chu;H. Kraütle;H. Kraütle;J. W. Mayer;J. W. Mayer;H. Müller;H. Müller

  143
  Citations

• Boron diffusion in silicon: the anomalies and control by point defect engineering

  Lin Shao;Jiarui Liu;Quark Y. Chen;Wei-Kan Chu

  137
  Citations

• Influence of thermal history on the residual disorder in implanted silicon

  L. Csepregi;W. K. Chu;H. Muller;J. W. Mayer

  134
  Citations

• Optimization of the germanium preamorphization conditions for shallow-junction formation

  M.C. Ozturk;J.J. Wortman;C.M. Osburn;A. Ajmera

  131
  Citations

• Negative transconductance and negative differential resistance in a grid‐gate modulation‐doped field‐effect transistor

  K. Ismail;W. Chu;A. Yen;D. A. Antoniadis

  130
  Citations

• ION-ENERGY EFFECTS IN SILICON ION-BEAM EPITAXY

  J. W. Rabalais;A. H. Al-Bayati;K. J. Boyd;D. Marton

  129
  Citations

• Epitaxial SrRuO3 thin films on (001) SrTiO3

  C. L. Chen;Y. Cao;Z. J. Huang;Q. D. Jiang

  121
  Citations

• Stoichiometry of thin silicon oxide layers on silicon

  T. W. Sigmon;W. K. Chu;E. Lugujjo;J. W. Mayer

  117
  Citations

• Calculation of mean excitation energy for all elements

  W.K. Chu;D. Powerd

  110
  Citations

• High temperature superconducting magnetic bearings

  Chase Kenyon Mcmichael;Wei-Kan Chu

  103
  Citations

• 2 – Backscattering Spectrometry

  G. Foti;J.W. Mayer;E. Rimini;S.U. Campisano

  28
  Citations