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D-Index & Metrics

Materials Science

D-Index
59
Citations
11757
World Ranking
7415
National Ranking
1840

Wei-Kan Chu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Wei-Kan Chu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 498 publications — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Wei-Kan Chu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Wei-Kan Chu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Wei-Kan Chu is a researcher affiliated with the University of Houston in the United States. Their work focuses primarily on materials science and engineering, with a particular emphasis on electrical and electronic engineering, polymers and plastics, and materials chemistry.

The scientist's research contributions include the publication titled Metal Halide Perovskites for Applications in Biomimetic Devices, published in 2024 in the journal Inorganics. This represents a recent addition to their academic output within the field.

Their work spans several main topics, notably:

  • Perovskite Materials and Applications
  • Conducting polymers and applications
  • ZnO doping and properties

Wei-Kan Chu has collaborated with other researchers, with Lei Su being a frequent coauthor, demonstrating ongoing research partnerships.

Their publications have appeared predominantly in the journal Inorganics, indicating a focus on chemical and materials science-related venues.

Their primary fields of study are:

  • Materials Science
  • Engineering

Subfields addressed by their work include:

  • Electrical and Electronic Engineering
  • Polymers and Plastics
  • Materials Chemistry

Best Publications

  • Principles and applications of ion beam techniques for the analysis of solids and thin films

    W.K. Chu;J.W. Mayer;M-A. Nicolet;T.M. Buck

  • Implanted noble gas atoms as diffusion markers in silicide formation

    W. K. Chu;S. S. Lau;J. W. Mayer;H. Müller

  • Structure and growth kinetics of Ni2Si on silicon

    King-Ning Tu;W. K. Chu;J. W. Mayer

  • Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications

    C. L. Chen;H. H. Feng;Z. Zhang;A. Brazdeikis

  • Profiling hydrogen in materials using ion beams

    J.F. Ziegler;C.P. Wu;P. Williams;C.W. White

  • Method for manufacture of ultra-thin film capacitor

    Arup Bhattacharyya;Wei-Kan Chu;James K. Howard;Francis W. Wiedman

  • Comparative study of CdS thin films deposited by single, continuous, and multiple dip chemical processes

    I.O Oladeji;L Chow;J.R Liu;W.K Chu

  • New uses of ion accelerators

    Thomas A. Cahill;James A. Cairns;Wei-Kan Chu;Billy L. Crowder

  • Reactive ion etching of diamond

    G. S. Sandhu;W. K. Chu

  • Stopping Cross Sections of Gases for α Particles from 0.3 to 2 MeV

    P.D. Bourland;W.K. Chu;D. Powers

  • Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon

    K. Cho;M. Numan;T. G. Finstad;W. K. Chu

  • Identification of the dominant diffusing species in silicide formation

    W. K. Chu;W. K. Chu;H. Kraütle;H. Kraütle;J. W. Mayer;J. W. Mayer;H. Müller;H. Müller

  • Boron diffusion in silicon: the anomalies and control by point defect engineering

    Lin Shao;Jiarui Liu;Quark Y. Chen;Wei-Kan Chu

  • Influence of thermal history on the residual disorder in implanted silicon

    L. Csepregi;W. K. Chu;H. Muller;J. W. Mayer

  • Optimization of the germanium preamorphization conditions for shallow-junction formation

    M.C. Ozturk;J.J. Wortman;C.M. Osburn;A. Ajmera

  • Negative transconductance and negative differential resistance in a grid‐gate modulation‐doped field‐effect transistor

    K. Ismail;W. Chu;A. Yen;D. A. Antoniadis

  • ION-ENERGY EFFECTS IN SILICON ION-BEAM EPITAXY

    J. W. Rabalais;A. H. Al-Bayati;K. J. Boyd;D. Marton

  • Epitaxial SrRuO3 thin films on (001) SrTiO3

    C. L. Chen;Y. Cao;Z. J. Huang;Q. D. Jiang

  • Stoichiometry of thin silicon oxide layers on silicon

    T. W. Sigmon;W. K. Chu;E. Lugujjo;J. W. Mayer

  • Calculation of mean excitation energy for all elements

    W.K. Chu;D. Powerd

  • High temperature superconducting magnetic bearings

    Chase Kenyon Mcmichael;Wei-Kan Chu

  • 2 – Backscattering Spectrometry

    G. Foti;J.W. Mayer;E. Rimini;S.U. Campisano

Frequent Co-Authors

Lin Shao
Lin Shao Texas A&M University
James W. Mayer
James W. Mayer Arizona State University
S. T. Picraux
S. T. Picraux Los Alamos National Laboratory
Ching-Wu Chu
Ching-Wu Chu Lawrence Berkeley National Laboratory
King-Ning Tu
King-Ning Tu City University of Hong Kong
S. S. Lau
S. S. Lau University of California, San Diego
Lee Chow
Lee Chow University of Central Florida
M.-A. Nicolet
M.-A. Nicolet California Institute of Technology

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