S. S. Lau

University of California, San Diego
United States

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Materials Science D-index 69 Citations 13,937 283 World Ranking 2703 National Ranking 840

Research.com Recognitions

Awards & Achievements

1993 - Fellow of American Physical Society (APS) Citation For contributions to the understanding of metalsemiconductor interactions, including applications in microelectronics and optoelectronics

Overview

What is he best known for?

The fields of study he is best known for:

Semiconductor
Silicon
Oxygen

His primary areas of study are Analytical chemistry, Optoelectronics, Silicon, Crystallography and Layer. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Thin film, Annealing, Doping and Ion beam mixing. His Optoelectronics research is multidisciplinary, incorporating elements of Thermal stability and Nitride.

S. S. Lau studied Silicon and Ion implantation that intersect with Wafer bonding and Wafer. The various areas that S. S. Lau examines in his Crystallography study include X-ray crystallography, Diffraction and Epitaxy. His work on Substrate, Barrier layer and Gallium nitride as part of general Layer research is often related to Negative charge, thus linking different fields of science.

His most cited work include:

Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors (307 citations)
Piezoelectric charge densities in AlGaN/GaN HFETs (283 citations)
A review of the metal–GaN contact technology (276 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Analytical chemistry, Silicon, Annealing and Epitaxy. The concepts of his Optoelectronics study are interwoven with issues in Layer and Thin film. His Analytical chemistry research integrates issues from Amorphous solid, Ion beam, Doping and Ion beam mixing.

S. S. Lau combines subjects such as Ion implantation, Wafer, Substrate and Composite material with his study of Silicon. His work deals with themes such as Ohmic contact, Mineralogy and Transmission electron microscopy, which intersect with Annealing. His study in Epitaxy is interdisciplinary in nature, drawing from both Crystallography, Chemical vapor deposition and Germanium.

He most often published in these fields:

Optoelectronics (37.68%)
Analytical chemistry (34.78%)
Silicon (30.80%)

What were the highlights of his more recent work (between 2001-2013)?

Optoelectronics (37.68%)
Silicon (30.80%)
Wafer (10.14%)

In recent papers he was focusing on the following fields of study:

S. S. Lau mostly deals with Optoelectronics, Silicon, Wafer, Ion implantation and Analytical chemistry. His biological study spans a wide range of topics, including Layer, Ohmic contact and Epitaxy. His studies in Silicon integrate themes in fields like Crystallography, Molecular beam epitaxy, Annealing and Isotropic etching.

He has included themes like Fracture mechanics and Cleavage in his Wafer study. His studies deal with areas such as Chemical physics, Crystallographic defect, Thin film and Conductivity as well as Ion implantation. His Analytical chemistry research includes elements of Doping, Dopant, Dopant Activation, Scanning electron microscope and Elastic recoil detection.

Between 2001 and 2013, his most popular works were:

Cold ion-cutting of hydrogen implanted Si (73 citations)
Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers (62 citations)
Method of transferring a thin crystalline semiconductor layer (59 citations)

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