2026 S. S. Lau: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	National Ranking	Publications	Citations
Materials Science	73	3917	1058	351	16000

Discipline name

D-Index

World Ranking

National Ranking

Publications

Citations

Materials Science

3917

1058

351

16000

Research.com Recognitions

1993 - Fellow of American Physical Society (APS) Citation For contributions to the understanding of metalsemiconductor interactions, including applications in microelectronics and optoelectronics

Overview

S. S. Lau is affiliated with the University of California, San Diego in the United States. Their research encompasses multiple disciplines, including Business, Management and Accounting, Computer Science, and Environmental Science. Within these fields, their work predominantly focuses on subfields such as Management Information Systems, Information Systems, Atomic and Molecular Physics and Optics, Management Science and Operations Research, and Water Science and Technology.

Their research output includes recent papers published in recognized venues. These include:

Room-temperature valley-selective emission in Si-MoSe2 heterostructures enabled by high-quality-factor chiroptical cavities, 2024, arXiv (Cornell University)
Impact of pharmaceutical waste (diclofenac) on consistency and particle packing of a Malaysian urban residual clay, 2025, Journal of Environmental Sciences

Lau's work addresses key topics within their main research interests. These topics are:

Business Process Modeling and Analysis
Service-Oriented Architecture and Web Services
Big Data and Business Intelligence
Data Quality and Management
Adsorption and biosorption for pollutant removal
Landfill Environmental Impact Studies
Clay minerals and soil interactions

Frequent co-authors collaborating with Lau include:

Chiao-Yun Li
Aparna Joshi
Nicholas T. L. Tam
Tejaswini Shinde
Wil M. P. van der Aalst

The primary publication venues associated with Lau are the Journal of Environmental Sciences and arXiv (Cornell University), each featuring their research contributions.

Lau received recognition in the form of the Fellow of the American Physical Society (APS) award in 1993, cited for contributions to the understanding of metal-semiconductor interactions, including applications in microelectronics and optoelectronics.

Best Publications

Electronic Materials Science: For Integrated Circuits in Si and GaAS

James Walter Mayer;S. S Lau

640
Citations
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

Edward T Yu;G. J. Sullivan;P. M. Asbeck;C. D. Wang;C. D. Wang

507
Citations
A review of the metal–GaN contact technology

Q.Z. Liu;S.S. Lau

467
Citations
Formation and Characterization of Transition-Metal Silicides

Marc-A. Nicolet;S.S. Lau

445
Citations
Piezoelectric charge densities in AlGaN/GaN HFETs

P.M. Asbeck;E.T. Yu;S.S. Lau;G.J. Sullivan

435
Citations
Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures

E. T. Yu;X. Z. Dang;P. M. Asbeck;S. S. Lau

335
Citations
Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures

J. W. Mayer;B. Y. Tsaur;S. S. Lau;L. S. Hung

319
Citations
Implanted noble gas atoms as diffusion markers in silicide formation

W. K. Chu;S. S. Lau;J. W. Mayer;H. Müller

311
Citations
Structural difference rule for amorphous alloy formation by ion mixing

Bai‐Xin Liu;W. L. Johnson;M‐A. Nicolet;S. S. Lau

280
Citations
Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge

E. D. Marshall;B. Zhang;L. C. Wang;P. F. Jiao

255
Citations
Interactions in the Co/Si thin‐film system. I. Kinetics

S. S. Lau;J. W. Mayer;King-Ning Tu

253
Citations
Salicidation process using NiSi and its device application

F. Deng;R. A. Johnson;P. M. Asbeck;S. S. Lau

239
Citations
Mechanically induced Si layer transfer in hydrogen-implanted Si wafers

K. Henttinen;I. Suni;S. S. Lau

229
Citations
The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes

L. S. Yu;Q. Z. Liu;Q. J. Xing;D. J. Qiao

226
Citations
Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

D. Qiao;L. S. Yu;S. S. Lau;J. M. Redwing

223
Citations
Schottky barrier engineering in III-V nitrides via the piezoelectric effect

Edward T Yu;X. Z. Dang;L. S. Yu;D. Qiao

203
Citations
Kinetics of TiSi2 formation by thin Ti films on Si

L. S. Hung;J. Gyulai;J. W. Mayer;S. S. Lau

194
Citations
Transfer of patterned ion-cut silicon layers

C. H. Yun;A. B. Wengrow;N. W. Cheung;Y. Zheng

194
Citations
Microstructure of Ti/Al ohmic contacts for n-AlGaN

S. Ruvimov;Z. Liliental-Weber;J. Washburn;D. Qiao

186
Citations
Continuous series of metastable Ag-Cu solid solutions formed by ion-beam mixing

B. Y. Tsaur;S. S. Lau;J. W. Mayer

185
Citations