1993 - Fellow of American Physical Society (APS) Citation For contributions to the understanding of metalsemiconductor interactions, including applications in microelectronics and optoelectronics
His primary areas of study are Analytical chemistry, Optoelectronics, Silicon, Crystallography and Layer. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Thin film, Annealing, Doping and Ion beam mixing. His Optoelectronics research is multidisciplinary, incorporating elements of Thermal stability and Nitride.
S. S. Lau studied Silicon and Ion implantation that intersect with Wafer bonding and Wafer. The various areas that S. S. Lau examines in his Crystallography study include X-ray crystallography, Diffraction and Epitaxy. His work on Substrate, Barrier layer and Gallium nitride as part of general Layer research is often related to Negative charge, thus linking different fields of science.
His scientific interests lie mostly in Optoelectronics, Analytical chemistry, Silicon, Annealing and Epitaxy. The concepts of his Optoelectronics study are interwoven with issues in Layer and Thin film. His Analytical chemistry research integrates issues from Amorphous solid, Ion beam, Doping and Ion beam mixing.
S. S. Lau combines subjects such as Ion implantation, Wafer, Substrate and Composite material with his study of Silicon. His work deals with themes such as Ohmic contact, Mineralogy and Transmission electron microscopy, which intersect with Annealing. His study in Epitaxy is interdisciplinary in nature, drawing from both Crystallography, Chemical vapor deposition and Germanium.
S. S. Lau mostly deals with Optoelectronics, Silicon, Wafer, Ion implantation and Analytical chemistry. His biological study spans a wide range of topics, including Layer, Ohmic contact and Epitaxy. His studies in Silicon integrate themes in fields like Crystallography, Molecular beam epitaxy, Annealing and Isotropic etching.
He has included themes like Fracture mechanics and Cleavage in his Wafer study. His studies deal with areas such as Chemical physics, Crystallographic defect, Thin film and Conductivity as well as Ion implantation. His Analytical chemistry research includes elements of Doping, Dopant, Dopant Activation, Scanning electron microscope and Elastic recoil detection.
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Electronic Materials Science: For Integrated Circuits in Si and GaAS
James Walter Mayer;S. S Lau.
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
Edward T Yu;G. J. Sullivan;P. M. Asbeck;C. D. Wang;C. D. Wang.
Applied Physics Letters (1997)
A review of the metal–GaN contact technology
Q.Z. Liu;S.S. Lau.
Solid-state Electronics (1998)
Formation and Characterization of Transition-Metal Silicides
Marc-A. Nicolet;S.S. Lau.
VLSI Electronics Microstructure Science (1983)
Piezoelectric charge densities in AlGaN/GaN HFETs
P.M. Asbeck;E.T. Yu;S.S. Lau;G.J. Sullivan.
Electronics Letters (1997)
Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
J. W. Mayer;B. Y. Tsaur;S. S. Lau;L. S. Hung.
Nuclear Instruments and Methods (1981)
Implanted noble gas atoms as diffusion markers in silicide formation
W. K. Chu;S. S. Lau;J. W. Mayer;H. Müller.
Thin Solid Films (1975)
Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures
E. T. Yu;X. Z. Dang;P. M. Asbeck;S. S. Lau.
Journal of Vacuum Science & Technology B (1999)
Structural difference rule for amorphous alloy formation by ion mixing
Bai‐Xin Liu;W. L. Johnson;M‐A. Nicolet;S. S. Lau.
Applied Physics Letters (1983)
Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge
E. D. Marshall;B. Zhang;L. C. Wang;P. F. Jiao.
Journal of Applied Physics (1987)
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