2026 Joan M. Redwing: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	83	2395	2313	692	651	481	22902

Joan M. Redwing publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Joan M. Redwing sits on this spectrum.

50 publications 1,163+

This scientist: 481 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Joan M. Redwing D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Joan M. Redwing sits on this spectrum.

40 D-Index 165+

This scientist: 83 D-Index — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

2016 - Fellow of the American Association for the Advancement of Science (AAAS)
2015 - Fellow of the Materials Research Society For key contributions to the mechanistic understanding of materials synthesis by chemical vapor deposition, including Group III nitrides, silicon nanowires and boride-based superconductors.
2012 - Fellow of American Physical Society (APS) Citation For key contributions to the mechanistic understanding of materials synthesis by vapor growth, including Si and SiGe nanowires, groupIII nitrides and boridebased superconductors

Overview

Joan M. Redwing is affiliated with Pennsylvania State University in the United States. Their research primarily focuses on materials science and engineering, with a substantial number of publications in these areas. Over the course of their career, they have contributed extensively to the understanding and development of materials chemistry and electrical and electronic engineering, alongside work in atomic and molecular physics, optics, biomedical engineering, and condensed matter physics.

The scientist's main areas of study include:

Materials Science
Engineering

Their research spans several subfields such as:

Materials Chemistry
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Biomedical Engineering
Condensed Matter Physics

Joan M. Redwing's research topics cover:

2D Materials and Applications
Graphene research and applications
MXene and MAX Phase Materials
Perovskite Materials and Applications
Advanced Memory and Neural Computing
Chalcogenide Semiconductor Thin Films
Ferroelectric and Negative Capacitance Devices

The scientist has published in a range of notable venues. Their frequent publication outlets include:

ACS Nano
Nature Communications
arXiv (Cornell University)
ECS Meeting Abstracts
Nano Letters

Some of their recent papers with publication year and venue are:

"Benchmarking monolayer MoS2 and WS2 field-effect transistors" (2021, Nature Communications)
"Wafer-Scale Epitaxial Growth of Unidirectional WS₂ Monolayers on Sapphire" (2021, ACS Nano)
"Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications" (2023, ACS Nano)
"A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector" (2020, Nature Electronics)
"Three-dimensional integration of two-dimensional field-effect transistors" (2024, Nature)

Joan M. Redwing frequently collaborates with a number of co-authors, including:

Nicholas Trainor
Saptarshi Das
Tanushree H. Choudhury
Saiphaneendra Bachu
Nasim Alem

The scientist has received several awards recognizing their contributions, such as:

Fellow of the American Association for the Advancement of Science (AAAS), 2016
Fellow of the Materials Research Society, 2015, for work on mechanistic understanding of materials synthesis by chemical vapor deposition including Group III nitrides, silicon nanowires, and boride-based superconductors
Fellow of American Physical Society (APS), 2012, with citation highlighting contributions to the mechanistic understanding of materials synthesis by vapor growth, including Si and SiGe nanowires, Group III nitrides, and boride-based superconductors

Best Publications

Two-dimensional gallium nitride realized via graphene encapsulation

Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá

793
Citations
In situ epitaxial MgB2 thin films for superconducting electronics.

Xianghui Zeng;Alexej V. Pogrebnyakov;Armen Kotcharov;James E. Jones

526
Citations
Benchmarking monolayer MoS2 and WS2 field-effect transistors.

Amritanand Sebastian;Rahul Pendurthi;Tanushree H. Choudhury;Joan M. Redwing

525
Citations
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition

Sarah M. Eichfeld;Lorraine Hossain;Yu Chuan Lin;Aleksander F. Piasecki

465
Citations
Piezoelectric charge densities in AlGaN/GaN HFETs

P.M. Asbeck;E.T. Yu;S.S. Lau;G.J. Sullivan

435
Citations
Bottom-up assembly of large-area nanowire resonator arrays

Mingwei Li;Rustom B. Bhiladvala;Thomas J. Morrow;James A. Sioss

361
Citations
CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN

D. A. Stocker;E. F. Schubert;J. M. Redwing

328
Citations
High-field superconductivity in alloyed MgB 2 thin films

V. Braccini;A. Gurevich;J. E. Giencke;M. C. Jewell

325
Citations
A roadmap for electronic grade 2D materials

Natalie Briggs;Shruti Subramanian;Zhong Lin;Xufan Li;Xufan Li

284
Citations
Silicon Nanowire Array Photoelectrochemical Cells

Adrian P. Goodey;Sarah M. Eichfeld;Kok Keong Lew;Joan M. Redwing

279
Citations
Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire

Xiaotian Zhang;Tanushree Holme Choudhury;Mikhail Chubarov;Yu Xiang

278
Citations
Optical properties of Si-doped GaN

E. F. Schubert;I. D. Goepfert;W. Grieshaber;W. Grieshaber;J. M. Redwing

272
Citations
An optically pumped GaN–AlGaN vertical cavity surface emitting laser

Joan M. Redwing;David A. S. Loeber;Neal G. Anderson;Michael A. Tischler

270
Citations
Group iii-v nitride substrate bowl, and production method and using method of group iii-v nitride substrate bowl

Robert P Vaudo;バウド，ロバート，ピー．;Jeffrey S Flynn;フリン，ジェフリー，エス．

267
Citations
Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates

Kok Keong Lew;Joan M. Redwing

256
Citations
Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications.

Unknown

256
Citations
Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Yu Chuan Lin;Bhakti Jariwala;Brian M. Bersch;Ke Xu

252
Citations
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire.

Mikhail Chubarov;Tanushree H. Choudhury;Danielle Reifsnyder Hickey;Saiphaneendra Bachu

244
Citations
Three-dimensional integration of two-dimensional field-effect transistors.

Unknown

244
Citations
Optical Properties of Rectangular Cross-sectional ZnS Nanowires

Qihua Xiong;G. Chen;J. D. Acord;X. Liu

233
Citations
AlGaN/GaN HEMTs grown on SiC substrates

S.C. Binari;J.M. Redwing;G. Kelner;W. Kruppa

230
Citations
The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes

L. S. Yu;Q. Z. Liu;Q. J. Xing;D. J. Qiao

226
Citations
High voltage (450 V) GaN Schottky rectifiers

Z. Z. Bandić;P. M. Bridger;E. C. Piquette;T. C. McGill

226
Citations
p-GaN surface treatments for metal contacts

Jingxi Sun;K. A. Rickert;J. M. Redwing;A. B. Ellis

224
Citations