Joan M. Redwing publications per year

The chart shows the history of publications by Joan M. Redwing between 1991 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Joan M. Redwing published across 36 years, from 1991 to 2026, averaging 15.2 papers a year. Output peaked at 35 publications in 2005. 25 of the 546 publications appeared in the last two years.

No. of publications

10 20 30

1991 2026

546 publications in total across all disciplines

View publications per year as a table

Joan M. Redwing: publications per year, 1991 to 2026
Year	Publications
1991	1
1992	0
1993	4
1994	7
1995	6
1996	8
1997	16
1998	25
1999	21
2000	20
2001	14
2002	3
2003	14
2004	18
2005	35
2006	20
2007	22
2008	26
2009	12
2010	16
2011	13
2012	8
2013	12
2014	8
2015	9
2016	15
2017	8
2018	17
2019	13
2020	20
2021	16
2022	31
2023	30
2024	33
2025	24
2026	1
Total	546

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Joan M. Redwing publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Joan M. Redwing sits on this spectrum.

No. of scientists

200 400 600 800

50–69 publications 1,163+

This scientist: 481 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table

Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications	Scientists	This scientist
50–69	28
70–89	152
90–109	356
110–129	487
130–149	723
150–169	835
170–189	850
190–209	891
210–229	862
230–249	766
250–269	726
270–289	665
290–309	593
310–329	537
330–349	477
350–369	440
370–389	356
390–409	321
410–429	256
430–449	246
450–469	216
470–489	212	481
490–509	174
510–529	194
530–549	162
550–569	131
570–589	111
590–609	103
610–629	99
630–649	77
650–669	92
670–689	56
690–709	53
710–729	53
730–749	38
750–769	52
770–789	43
790–809	38
810–829	34
830–849	25
850–869	18
870–889	20
890–909	24
910–929	27
930–949	20
950–969	17
970–989	10
990–1,009	16
1,010–1,029	13
1,030–1,049	12
1,050–1,069	9
1,070–1,089	8
1,090–1,109	7
1,110–1,129	9
1,130–1,149	2
1,150–1,162	5
1,163+	100

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Joan M. Redwing D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Joan M. Redwing sits on this spectrum.

No. of scientists

200 400 600

40–41 D-Index 165+

This scientist: 83 D-Index — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table

Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index	Scientists	This scientist
40–41	211
42–43	450
44–45	612
46–47	612
48–49	598
50–51	657
52–53	667
54–55	621
56–57	597
58–59	610
60–61	587
62–63	606
64–65	533
66–67	490
68–69	469
70–71	378
72–73	421
74–75	359
76–77	323
78–79	299
80–81	230
82–83	210	83
84–85	195
86–87	203
88–89	175
90–91	175
92–93	142
94–95	121
96–97	117
98–99	107
100–101	88
102–103	85
104–105	68
106–107	62
108–109	57
110–111	45
112–113	49
114–115	50
116–117	34
118–119	38
120–121	37
122–123	29
124–125	28
126–127	24
128–129	33
130–131	28
132–133	21
134–135	20
136–137	23
138–139	17
140–141	12
142–143	17
144–145	21
146–147	13
148–149	11
150–151	14
152–153	13
154–155	9
156–157	10
158–159	7
160–161	4
162–163	4
164	3
165+	98

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Research.com Recognitions

2016 - Fellow of the American Association for the Advancement of Science (AAAS)
2015 - Fellow of the Materials Research Society For key contributions to the mechanistic understanding of materials synthesis by chemical vapor deposition, including Group III nitrides, silicon nanowires and boride-based superconductors.
2012 - Fellow of American Physical Society (APS) Citation For key contributions to the mechanistic understanding of materials synthesis by vapor growth, including Si and SiGe nanowires, groupIII nitrides and boridebased superconductors

Overview

Joan M. Redwing is affiliated with Pennsylvania State University in the United States. Their research primarily focuses on materials science and engineering, with a substantial number of publications in these areas. Over the course of their career, they have contributed extensively to the understanding and development of materials chemistry and electrical and electronic engineering, alongside work in atomic and molecular physics, optics, biomedical engineering, and condensed matter physics.

The scientist's main areas of study include:

Materials Science
Engineering

Their research spans several subfields such as:

Materials Chemistry
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Biomedical Engineering
Condensed Matter Physics

Joan M. Redwing's research topics cover:

2D Materials and Applications
Graphene research and applications
MXene and MAX Phase Materials
Perovskite Materials and Applications
Advanced Memory and Neural Computing
Chalcogenide Semiconductor Thin Films
Ferroelectric and Negative Capacitance Devices

The scientist has published in a range of notable venues. Their frequent publication outlets include:

ACS Nano
Nature Communications
arXiv (Cornell University)
ECS Meeting Abstracts
Nano Letters

Some of their recent papers with publication year and venue are:

"Benchmarking monolayer MoS2 and WS2 field-effect transistors" (2021, Nature Communications)
"Wafer-Scale Epitaxial Growth of Unidirectional WS₂ Monolayers on Sapphire" (2021, ACS Nano)
"Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications" (2023, ACS Nano)
"A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector" (2020, Nature Electronics)
"Three-dimensional integration of two-dimensional field-effect transistors" (2024, Nature)

Joan M. Redwing frequently collaborates with a number of co-authors, including:

Nicholas Trainor
Saptarshi Das
Tanushree H. Choudhury
Saiphaneendra Bachu
Nasim Alem

The scientist has received several awards recognizing their contributions, such as:

Fellow of the American Association for the Advancement of Science (AAAS), 2016
Fellow of the Materials Research Society, 2015, for work on mechanistic understanding of materials synthesis by chemical vapor deposition including Group III nitrides, silicon nanowires, and boride-based superconductors
Fellow of American Physical Society (APS), 2012, with citation highlighting contributions to the mechanistic understanding of materials synthesis by vapor growth, including Si and SiGe nanowires, Group III nitrides, and boride-based superconductors

Best Publications

Two-dimensional gallium nitride realized via graphene encapsulation

Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá

793
Citations
In situ epitaxial MgB2 thin films for superconducting electronics.

Xianghui Zeng;Alexej V. Pogrebnyakov;Armen Kotcharov;James E. Jones

526
Citations
Benchmarking monolayer MoS2 and WS2 field-effect transistors.

Amritanand Sebastian;Rahul Pendurthi;Tanushree H. Choudhury;Joan M. Redwing

525
Citations
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition

Sarah M. Eichfeld;Lorraine Hossain;Yu Chuan Lin;Aleksander F. Piasecki

465
Citations
Piezoelectric charge densities in AlGaN/GaN HFETs

P.M. Asbeck;E.T. Yu;S.S. Lau;G.J. Sullivan

435
Citations
Bottom-up assembly of large-area nanowire resonator arrays

Mingwei Li;Rustom B. Bhiladvala;Thomas J. Morrow;James A. Sioss

361
Citations
CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN

D. A. Stocker;E. F. Schubert;J. M. Redwing

328
Citations
High-field superconductivity in alloyed MgB 2 thin films

V. Braccini;A. Gurevich;J. E. Giencke;M. C. Jewell

325
Citations
A roadmap for electronic grade 2D materials

Natalie Briggs;Shruti Subramanian;Zhong Lin;Xufan Li;Xufan Li

284
Citations
Silicon Nanowire Array Photoelectrochemical Cells

Adrian P. Goodey;Sarah M. Eichfeld;Kok Keong Lew;Joan M. Redwing

279
Citations
Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire

Xiaotian Zhang;Tanushree Holme Choudhury;Mikhail Chubarov;Yu Xiang

278
Citations
Optical properties of Si-doped GaN

E. F. Schubert;I. D. Goepfert;W. Grieshaber;W. Grieshaber;J. M. Redwing

272
Citations
An optically pumped GaN–AlGaN vertical cavity surface emitting laser

Joan M. Redwing;David A. S. Loeber;Neal G. Anderson;Michael A. Tischler

270
Citations
Group iii-v nitride substrate bowl, and production method and using method of group iii-v nitride substrate bowl

Robert P Vaudo;バウド，ロバート，ピー．;Jeffrey S Flynn;フリン，ジェフリー，エス．

267
Citations
Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates

Kok Keong Lew;Joan M. Redwing

256
Citations
Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications.

Unknown

256
Citations
Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Yu Chuan Lin;Bhakti Jariwala;Brian M. Bersch;Ke Xu

252
Citations
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire.

Mikhail Chubarov;Tanushree H. Choudhury;Danielle Reifsnyder Hickey;Saiphaneendra Bachu

244
Citations
Three-dimensional integration of two-dimensional field-effect transistors.

Unknown

244
Citations
Optical Properties of Rectangular Cross-sectional ZnS Nanowires

Qihua Xiong;G. Chen;J. D. Acord;X. Liu

233
Citations
AlGaN/GaN HEMTs grown on SiC substrates

S.C. Binari;J.M. Redwing;G. Kelner;W. Kruppa

230
Citations
The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes

L. S. Yu;Q. Z. Liu;Q. J. Xing;D. J. Qiao

226
Citations
High voltage (450 V) GaN Schottky rectifiers

Z. Z. Bandić;P. M. Bridger;E. C. Piquette;T. C. McGill

226
Citations
p-GaN surface treatments for metal contacts

Jingxi Sun;K. A. Rickert;J. M. Redwing;A. B. Ellis

224
Citations