2016 - Fellow of the American Association for the Advancement of Science (AAAS)
2015 - Fellow of the Materials Research Society For key contributions to the mechanistic understanding of materials synthesis by chemical vapor deposition, including Group III nitrides, silicon nanowires and boride-based superconductors.
2012 - Fellow of American Physical Society (APS) Citation For key contributions to the mechanistic understanding of materials synthesis by vapor growth, including Si and SiGe nanowires, groupIII nitrides and boridebased superconductors
Her primary scientific interests are in Optoelectronics, Nanowire, Nanotechnology, Silicon and Doping. Joan M. Redwing combines subjects such as Metalorganic vapour phase epitaxy, Epitaxy and Nitride with her study of Optoelectronics. Her Epitaxy study combines topics in areas such as Substrate, Chemical vapor deposition and Condensed matter physics.
Her Nanowire study combines topics from a wide range of disciplines, such as Chemical engineering, Nanostructure and Absorption spectroscopy. Her research integrates issues of Nanoporous, Polymer solar cell and Vapor–liquid–solid method in her study of Silicon. In her work, Band gap and Electrical resistivity and conductivity is strongly intertwined with Analytical chemistry, which is a subfield of Doping.
Her scientific interests lie mostly in Optoelectronics, Chemical vapor deposition, Thin film, Epitaxy and Nanotechnology. Her Optoelectronics study frequently links to other fields, such as Substrate. Her Chemical vapor deposition study integrates concerns from other disciplines, such as Metalorganic vapour phase epitaxy, Composite material, Deposition, Stress and Analytical chemistry.
Her studies in Thin film integrate themes in fields like Superconductivity and Condensed matter physics. She interconnects Monolayer and Wafer in the investigation of issues within Epitaxy. Her research combines Silicon and Nanotechnology.
Joan M. Redwing mainly focuses on Optoelectronics, Chemical vapor deposition, Monolayer, Epitaxy and Chemical engineering. Her Optoelectronics study frequently draws connections to adjacent fields such as Transistor. The subject of her Chemical vapor deposition research is within the realm of Nanotechnology.
Her studies deal with areas such as Nucleation, Transition metal, Crystallite, Sapphire and Photoluminescence as well as Epitaxy. Her work in Sapphire addresses subjects such as Substrate, which are connected to disciplines such as Raman spectroscopy. Her research investigates the connection with Chemical engineering and areas like Silicon which intersect with concerns in Analytical chemistry.
Her primary areas of study are Chemical vapor deposition, Monolayer, Epitaxy, Nanotechnology and Optoelectronics. The Chemical vapor deposition study combines topics in areas such as Metalorganic vapour phase epitaxy, Inorganic chemistry, Thin film, Etching and Tungsten hexacarbonyl. Her Monolayer research includes elements of Chemical physics, Plasmon, Heterojunction and Raman spectroscopy.
The concepts of her Epitaxy study are interwoven with issues in Sapphire, Tungsten diselenide, Single crystal and Crystallite. Her Nanotechnology research is multidisciplinary, incorporating perspectives in Silicon, Nanolithography, Acceptor and Transition metal. Her Optoelectronics research is multidisciplinary, incorporating elements of Noise and Communications system.
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Two-dimensional gallium nitride realized via graphene encapsulation
Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá.
Nature Materials (2016)
In situ epitaxial MgB2 thin films for superconducting electronics.
Xianghui Zeng;Alexej V. Pogrebnyakov;Armen Kotcharov;James E. Jones.
Nature Materials (2002)
Piezoelectric charge densities in AlGaN/GaN HFETs
P.M. Asbeck;E.T. Yu;S.S. Lau;G.J. Sullivan.
Electronics Letters (1997)
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
Sarah M. Eichfeld;Lorraine Hossain;Yu Chuan Lin;Aleksander F. Piasecki.
ACS Nano (2015)
Bottom-up assembly of large-area nanowire resonator arrays
Mingwei Li;Rustom B. Bhiladvala;Thomas J. Morrow;James A. Sioss.
Nature Nanotechnology (2008)
GaN-based devices using (Ga, AL, In)N base layers
Tischler Michael A;Kuech Thomas F.
CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN
D. A. Stocker;E. F. Schubert;J. M. Redwing.
Applied Physics Letters (1998)
Silicon Nanowire Array Photoelectrochemical Cells
Adrian P. Goodey;Sarah M. Eichfeld;Kok Keong Lew;Joan M. Redwing.
Journal of the American Chemical Society (2007)
Iii-v nitride substrate boule and method of making and using the same
Robert P Vaudo;バウド，ロバート，ピー．;Jeffrey S Flynn;フリン，ジェフリー，エス．.
Optical properties of Si-doped GaN
E. F. Schubert;I. D. Goepfert;W. Grieshaber;W. Grieshaber;J. M. Redwing.
Applied Physics Letters (1997)
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