D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 67 Citations 14,666 298 World Ranking 2187 National Ranking 714

Research.com Recognitions

Awards & Achievements

2016 - Fellow of the American Association for the Advancement of Science (AAAS)

2015 - Fellow of the Materials Research Society For key contributions to the mechanistic understanding of materials synthesis by chemical vapor deposition, including Group III nitrides, silicon nanowires and boride-based superconductors.

2012 - Fellow of American Physical Society (APS) Citation For key contributions to the mechanistic understanding of materials synthesis by vapor growth, including Si and SiGe nanowires, groupIII nitrides and boridebased superconductors

Overview

What is she best known for?

The fields of study she is best known for:

  • Semiconductor
  • Silicon
  • Thermodynamics

Her primary scientific interests are in Optoelectronics, Nanowire, Nanotechnology, Silicon and Doping. Joan M. Redwing combines subjects such as Metalorganic vapour phase epitaxy, Epitaxy and Nitride with her study of Optoelectronics. Her Epitaxy study combines topics in areas such as Substrate, Chemical vapor deposition and Condensed matter physics.

Her Nanowire study combines topics from a wide range of disciplines, such as Chemical engineering, Nanostructure and Absorption spectroscopy. Her research integrates issues of Nanoporous, Polymer solar cell and Vapor–liquid–solid method in her study of Silicon. In her work, Band gap and Electrical resistivity and conductivity is strongly intertwined with Analytical chemistry, which is a subfield of Doping.

Her most cited work include:

  • In situ epitaxial MgB2 thin films for superconducting electronics. (351 citations)
  • Two-dimensional gallium nitride realized via graphene encapsulation (322 citations)
  • Piezoelectric charge densities in AlGaN/GaN HFETs (283 citations)

What are the main themes of her work throughout her whole career to date?

Her scientific interests lie mostly in Optoelectronics, Chemical vapor deposition, Thin film, Epitaxy and Nanotechnology. Her Optoelectronics study frequently links to other fields, such as Substrate. Her Chemical vapor deposition study integrates concerns from other disciplines, such as Metalorganic vapour phase epitaxy, Composite material, Deposition, Stress and Analytical chemistry.

Her studies in Thin film integrate themes in fields like Superconductivity and Condensed matter physics. She interconnects Monolayer and Wafer in the investigation of issues within Epitaxy. Her research combines Silicon and Nanotechnology.

She most often published in these fields:

  • Optoelectronics (40.20%)
  • Chemical vapor deposition (24.43%)
  • Thin film (20.10%)

What were the highlights of her more recent work (between 2015-2021)?

  • Optoelectronics (40.20%)
  • Chemical vapor deposition (24.43%)
  • Monolayer (5.34%)

In recent papers she was focusing on the following fields of study:

Joan M. Redwing mainly focuses on Optoelectronics, Chemical vapor deposition, Monolayer, Epitaxy and Chemical engineering. Her Optoelectronics study frequently draws connections to adjacent fields such as Transistor. The subject of her Chemical vapor deposition research is within the realm of Nanotechnology.

Her studies deal with areas such as Nucleation, Transition metal, Crystallite, Sapphire and Photoluminescence as well as Epitaxy. Her work in Sapphire addresses subjects such as Substrate, which are connected to disciplines such as Raman spectroscopy. Her research investigates the connection with Chemical engineering and areas like Silicon which intersect with concerns in Analytical chemistry.

Between 2015 and 2021, her most popular works were:

  • Two-dimensional gallium nitride realized via graphene encapsulation (322 citations)
  • Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire (88 citations)
  • Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors (81 citations)

In her most recent research, the most cited papers focused on:

  • Semiconductor
  • Thermodynamics
  • Silicon

Her primary areas of study are Chemical vapor deposition, Monolayer, Epitaxy, Nanotechnology and Optoelectronics. The Chemical vapor deposition study combines topics in areas such as Metalorganic vapour phase epitaxy, Inorganic chemistry, Thin film, Etching and Tungsten hexacarbonyl. Her Monolayer research includes elements of Chemical physics, Plasmon, Heterojunction and Raman spectroscopy.

The concepts of her Epitaxy study are interwoven with issues in Sapphire, Tungsten diselenide, Single crystal and Crystallite. Her Nanotechnology research is multidisciplinary, incorporating perspectives in Silicon, Nanolithography, Acceptor and Transition metal. Her Optoelectronics research is multidisciplinary, incorporating elements of Noise and Communications system.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Two-dimensional gallium nitride realized via graphene encapsulation

Zakaria Y. Al Balushi;Ke Wang;Ram Krishna Ghosh;Rafael A. Vilá.
Nature Materials (2016)

533 Citations

In situ epitaxial MgB2 thin films for superconducting electronics.

Xianghui Zeng;Alexej V. Pogrebnyakov;Armen Kotcharov;James E. Jones.
Nature Materials (2002)

479 Citations

Piezoelectric charge densities in AlGaN/GaN HFETs

P.M. Asbeck;E.T. Yu;S.S. Lau;G.J. Sullivan.
Electronics Letters (1997)

426 Citations

Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition

Sarah M. Eichfeld;Lorraine Hossain;Yu Chuan Lin;Aleksander F. Piasecki.
ACS Nano (2015)

365 Citations

Bottom-up assembly of large-area nanowire resonator arrays

Mingwei Li;Rustom B. Bhiladvala;Thomas J. Morrow;James A. Sioss.
Nature Nanotechnology (2008)

350 Citations

GaN-based devices using (Ga, AL, In)N base layers

Tischler Michael A;Kuech Thomas F.
(1997)

344 Citations

CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN

D. A. Stocker;E. F. Schubert;J. M. Redwing.
Applied Physics Letters (1998)

305 Citations

Silicon Nanowire Array Photoelectrochemical Cells

Adrian P. Goodey;Sarah M. Eichfeld;Kok Keong Lew;Joan M. Redwing.
Journal of the American Chemical Society (2007)

269 Citations

Iii-v nitride substrate boule and method of making and using the same

Robert P Vaudo;バウド,ロバート,ピー.;Jeffrey S Flynn;フリン,ジェフリー,エス..
(2001)

260 Citations

Optical properties of Si-doped GaN

E. F. Schubert;I. D. Goepfert;W. Grieshaber;W. Grieshaber;J. M. Redwing.
Applied Physics Letters (1997)

258 Citations

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