Scott T. Sheppard focuses on Optoelectronics, Transistor, Layer, Nitride and Electrical engineering. His studies deal with areas such as Etching, Ohmic contact, Electronic engineering and Semiconductor device as well as Optoelectronics. His studies in Ohmic contact integrate themes in fields like Metal gate and Semiconductor.
His Gate oxide and High-electron-mobility transistor investigations are all subjects of Transistor research. Scott T. Sheppard is interested in Substrate, which is a branch of Layer. His work in Nitride addresses subjects such as Passivation, which are connected to disciplines such as Wide-bandgap semiconductor.
His main research concerns Optoelectronics, Transistor, Layer, Semiconductor device and Nitride. His research integrates issues of Ohmic contact, Electronic engineering and Electrical engineering in his study of Optoelectronics. His Gate oxide and High-electron-mobility transistor study in the realm of Transistor connects with subjects such as Bar.
His High-electron-mobility transistor research includes elements of Gallium nitride, RF power amplifier and Monolithic microwave integrated circuit. His study explores the link between Layer and topics such as Electrical conductor that cross with problems in Sic substrate and Semi insulating. His study looks at the intersection of Nitride and topics like Barrier layer with Passivation.
His primary areas of study are Optoelectronics, Transistor, Layer, Electrical engineering and High-electron-mobility transistor. Scott T. Sheppard combines topics linked to Semiconductor device with his work on Optoelectronics. His Transistor study incorporates themes from Signal, Jumper, Nitride and Linearity.
The study incorporates disciplines such as Passivation, Leakage, Ohmic contact, Schottky barrier and Dry etching in addition to Nitride. The concepts of his High-electron-mobility transistor study are interwoven with issues in Amplifier and Monolithic microwave integrated circuit. The Amplifier study combines topics in areas such as Gallium nitride, Electronic engineering and Power semiconductor device.
Scott T. Sheppard mostly deals with Transistor, Optoelectronics, Electrical engineering, Layer and Linearity. Scott T. Sheppard has researched Transistor in several fields, including Barrier layer and Semiconductor. The various areas that he examines in his Barrier layer study include Nitride, Passivation, Dry etching and Dielectric layer.
His study in RF power amplifier and Monolithic microwave integrated circuit falls under the purview of Electrical engineering. His High-electron-mobility transistor research is multidisciplinary, incorporating elements of Amplifier, Circuit design, Power semiconductor device and Integrated circuit. Bar combines with fields such as Jumper and Signal in his investigation.
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A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
R. S. Pengelly;S. M. Wood;J. W. Milligan;S. T. Sheppard.
IEEE Transactions on Microwave Theory and Techniques (2012)
Method of forming vias in silicon carbide and resulting devices and circuits
Zoltan Ring;Scott Thomas Sheppard;Helmut Hagleitner.
Nitride based transistors on semi-insulating silicon carbide substrates
Scott Thomas Sheppard;Scott Thomas Allen;John Williams Palmour.
Methods of passivating surfaces of wide bandgap semiconductor devices
Adam William Saxler;Scott Sheppard;Richard Peter Smith.
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
Adam William Saxler;Richard Peter Smith;Scott T. Sheppard.
Methods of fabricating nitride-based transistors with an ETCH stop layer
Scott T. Sheppard;Andrew K. Mackenzie;Scott T. Allen;Richard P. Smith.
MANUFACTURING METHOD OF NITRIDE-BASE TRANSISTOR HAVING CAP LAYER AND BURIED GATE
Scott Sheppard;Smith Richard P.
Nitride-based transistor with protective layer and low damage recess, and method of fabrication thereof
Scott T Sheppard;Richard P Smith;Ling Zoltan;ティー．シェパード スコット.
Switch mode power amplifier using fet with field plate extension
Semiconductor devices including implanted regions and protective layers
Scott T. Sheppard;Adam Saxler.
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