The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Salah M. Bedair sits on this spectrum.
This scientist: 348 publications — 69th percentile
69% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Salah M. Bedair sits on this spectrum.
This scientist: 48 D-Index — 17th percentile
17% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Salah M. Bedair is affiliated with North Carolina State University in the United States. Their research spans multiple areas within physics, engineering, and materials science, with a focus on semiconductor materials and devices.
The scientist has contributed extensively to the study of GaN-based semiconductor devices and materials, reflected in the majority of their publications. Their work also addresses semiconductor quantum structures and devices, Ga2O3 and related materials, ZnO doping and properties, and photocathodes and microchannel plates. Additionally, they have explored topics related to solar cell performance optimization.
Their main fields of study are:
Within these, their subfields of study include:
Salah M. Bedair has published primarily in the following venues:
Recent papers include:
Frequent co-authors collaborating with Bedair include:
This body of work illustrates a focus on advanced semiconductor materials, particularly those based on indium gallium nitride (InGaN), and related optoelectronic devices. Research has encompassed experimental and modeling approaches, as well as device fabrication and characterization.
M. L. Reed;N. A. El-Masry;H. H. Stadelmaier;M. K. Ritums
Zhibo Zhang;Veena Misra;Salah M. A. Bedair;Mehmet Ozturk
N. A. El-Masry;E. L. Piner;S. X. Liu;S. M. Bedair
Forrest Gregg McIntosh;Salah Mohamed Bedair;Nadia Ahmed El-Masry;John Claassen Roberts
A. H. Morshed;M. E. Moussa;S. M. Bedair;R. Leonard
S. M. Bedair;M. A. Tischler;T. Katsuyama;N. A. El‐Masry
E. L. Piner;M. K. Behbehani;N. A. El-Masry;F. G. McIntosh
T. Chikyow;S. M. Bedair;L. Tye;N. A. El‐Masry
L. Tye;N. A. El‐Masry;T. Chikyow;P. McLarty
C. A. Parker;J. C. Roberts;S. M. Bedair;M. J. Reed
C. A. Parker;J. C. Roberts;S. M. Bedair;M. J. Reed
M. E. Aumer;S. F. LeBoeuf;F. G. McIntosh;S. M. Bedair
S. M. Bedair;M. F. Lamorte;J. R. Hauser
F. G. McIntosh;K. S. Boutros;J. C. Roberts;S. M. Bedair
M. E. Aumer;S. F. LeBoeuf;S. M. Bedair;M. Smith
M. A. Tischler;S. M. Bedair
M. K. Behbehani;E. L. Piner;S. X. Liu;N. A. El-Masry
M.L Reed;M.K Ritums;H.H Stadelmaier;M.J Reed
P. K. Chiang;S. M. Bedair
M. J. Reed;F. E. Arkun;E. A. Berkman;N. A. Elmasry
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