Salah M. Bedair

Overview

Best Publications

• Room temperature ferromagnetic properties of (Ga, Mn)N

  M. L. Reed;N. A. El-Masry;H. H. Stadelmaier;M. K. Ritums

  874
  Citations

• Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein

  Zhibo Zhang;Veena Misra;Salah M. A. Bedair;Mehmet Ozturk

  406
  Citations

• Phase separation in InGaN grown by metalorganic chemical vapor deposition

  N. A. El-Masry;E. L. Piner;S. X. Liu;S. M. Bedair

  397
  Citations

• Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows

  Forrest Gregg McIntosh;Salah Mohamed Bedair;Nadia Ahmed El-Masry;John Claassen Roberts

  391
  Citations

• Violet/blue emission from epitaxial cerium oxide films on silicon substrates

  A. H. Morshed;M. E. Moussa;S. M. Bedair;R. Leonard

  280
  Citations

• Atomic layer epitaxy of III‐V binary compounds

  S. M. Bedair;M. A. Tischler;T. Katsuyama;N. A. El‐Masry

  220
  Citations

• Effect of hydrogen on the indium incorporation in InGaN epitaxial films

  E. L. Piner;M. K. Behbehani;N. A. El-Masry;F. G. McIntosh

  186
  Citations

• Reaction and regrowth control of CeO2 on Si(111) surface for the silicon‐on‐insulator structure

  T. Chikyow;S. M. Bedair;L. Tye;N. A. El‐Masry

  183
  Citations

• ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111)

  L. Tye;N. A. El‐Masry;T. Chikyow;P. McLarty

  180
  Citations

• Determination of the critical layer thickness in the InGaN/GaN heterostructures

  C. A. Parker;J. C. Roberts;S. M. Bedair;M. J. Reed

  158
  Citations

• Optical band gap dependence on composition and thickness of InxGa1−xN (0<x<0.25) grown on GaN

  C. A. Parker;J. C. Roberts;S. M. Bedair;M. J. Reed

  144
  Citations

• High optical quality AlInGaN by metalorganic chemical vapor deposition

  M. E. Aumer;S. F. LeBoeuf;F. G. McIntosh;S. M. Bedair

  140
  Citations

• A two‐junction cascade solar‐cell structure

  S. M. Bedair;M. F. Lamorte;J. R. Hauser

  139
  Citations

• Growth and characterization of AlInGaN quaternary alloys

  F. G. McIntosh;K. S. Boutros;J. C. Roberts;S. M. Bedair

  129
  Citations

• Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

  M. E. Aumer;S. F. LeBoeuf;S. M. Bedair;M. Smith

  129
  Citations

• Self‐limiting mechanism in the atomic layer epitaxy of GaAs

  M. A. Tischler;S. M. Bedair

  127
  Citations

• Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

  M. K. Behbehani;E. L. Piner;S. X. Liu;N. A. El-Masry

  123
  Citations

• Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

  M.L Reed;M.K Ritums;H.H Stadelmaier;M.J Reed

  123
  Citations

• p-n junction formation in InSb and InAs(1-x)Sb(x) by metalorganic chemical vapor deposition

  P. K. Chiang;S. M. Bedair

  117
  Citations

• Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

  M. J. Reed;F. E. Arkun;E. A. Berkman;N. A. Elmasry

  106
  Citations