What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Optoelectronics
- Silicon
Salah M. Bedair mostly deals with Optoelectronics, Epitaxy, Chemical vapor deposition, Photoluminescence and Thin film.
His Optoelectronics research is multidisciplinary, relying on both Quantum well, Crystallography and Nitride.
Salah M. Bedair has researched Epitaxy in several fields, including Semiconductor device, Mineralogy and Superlattice.
His Chemical vapor deposition study integrates concerns from other disciplines, such as Metalorganic vapour phase epitaxy, Diffraction and Analytical chemistry.
His research in Photoluminescence intersects with topics in X-ray crystallography and Condensed matter physics, Band gap.
His Thin film research integrates issues from Crystal growth, Substrate and Silicon.
His most cited work include:
- Room temperature ferromagnetic properties of (Ga, Mn)N (579 citations)
- Phase separation in InGaN grown by metalorganic chemical vapor deposition (264 citations)
- Stacked quantum well aluminum indium gallium nitride light emitting diodes (192 citations)
What are the main themes of his work throughout his whole career to date?
His primary areas of investigation include Optoelectronics, Epitaxy, Chemical vapor deposition, Analytical chemistry and Atomic layer epitaxy.
Salah M. Bedair combines subjects such as Quantum well and Thin film with his study of Optoelectronics.
His Epitaxy research incorporates elements of Crystal growth, Doping, Silicon, Mineralogy and Substrate.
In his study, Sapphire is strongly linked to Metalorganic vapour phase epitaxy, which falls under the umbrella field of Chemical vapor deposition.
His study looks at the relationship between Analytical chemistry and fields such as Transmission electron microscopy, as well as how they intersect with chemical problems.
His Atomic layer epitaxy research is multidisciplinary, incorporating perspectives in Field-effect transistor, Monolayer and Atmospheric temperature range.
He most often published in these fields:
- Optoelectronics (59.79%)
- Epitaxy (33.22%)
- Chemical vapor deposition (23.43%)
What were the highlights of his more recent work (between 2012-2021)?
- Optoelectronics (59.79%)
- Quantum well (14.69%)
- Gallium arsenide (11.89%)
In recent papers he was focusing on the following fields of study:
Salah M. Bedair spends much of his time researching Optoelectronics, Quantum well, Gallium arsenide, Band gap and Solar cell.
The study incorporates disciplines such as Photovoltaic system and Short circuit in addition to Optoelectronics.
His research integrates issues of Metalorganic vapour phase epitaxy and Quantum efficiency in his study of Quantum well.
His Metalorganic vapour phase epitaxy research is multidisciplinary, incorporating elements of Wide-bandgap semiconductor, Condensed matter physics, Ferromagnetism and Chemical vapor deposition.
His work deals with themes such as Doping, Absorption, Layer, Tellurium and Tunneling current, which intersect with Band gap.
His study in Etching is interdisciplinary in nature, drawing from both Sapphire and Epitaxy.
Between 2012 and 2021, his most popular works were:
- Strain-balanced InGaN/GaN multiple quantum wells (20 citations)
- Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells (20 citations)
- Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells (19 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Silicon
- Organic chemistry
The scientist’s investigation covers issues in Optoelectronics, Gallium arsenide, Quantum well, Band gap and Solar cell.
His Photoluminescence and Indium investigations are all subjects of Optoelectronics research.
His Photoluminescence study combines topics in areas such as Metalorganic vapour phase epitaxy, Chemical vapor deposition and Light-emitting diode.
Salah M. Bedair interconnects Thermionic emission, Chemical physics, Indium gallium nitride, Adsorption and Analytical chemistry in the investigation of issues within Indium.
His Gallium arsenide study incorporates themes from Quantum tunnelling and Short circuit.
The various areas that Salah M. Bedair examines in his Band gap study include Doping, Biosensor, Layer, Voltage drop and Tellurium.
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