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Materials Science

D-Index
60
Citations
10141
World Ranking
7193
National Ranking
1785

Overview

J. M. Zavada is affiliated with New York University in the United States. Their recent research contributions focus on the field of optics and photonics. Zavada has published at least one paper titled Optics in 2024, which appeared in 2024 in the journal Optics and Photonics News. This publication is the primary recorded output in Zavada's academic portfolio to date.

Their work has been exclusively disseminated through the venue Optics and Photonics News, reflecting a concentrated engagement with this particular publication outlet. No co-authors have been listed in conjunction with Zavada's research outputs.

The academic interests or topics related to Zavada's work are specifically within the realms of optics and photonics, as indicated by the focus of their published study. There is no publicly available data on additional fields of study, subfields, or broader research themes connected to Zavada's work at this time.

J. M. Zavada has not been documented to have authored any book publications through any recognized publishers as per the existing records.

  • Optics in 2024 (2024, Optics and Photonics News)

Best Publications

  • Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

    A.J. Steckl;J.M. Zavada

  • 1.54‐μm photoluminescence from Er‐implanted GaN and AlN

    R. G. Wilson;R. N. Schwartz;C. R. Abernathy;S. J. Pearton

  • First-principles analysis of electron-phonon interactions in graphene

    K. M. Borysenko;J. T. Mullen;E. A. Barry;S. Paul

  • Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

    K. Ip;M. E. Overberg;Y. W. Heo;D. P. Norton

  • Spin field effect transistor with a graphene channel

    Y. G. Semenov;K. W. Kim;J. M. Zavada

  • Wide bandgap GaN-based semiconductors for spintronics

    SJ Pearton;CR Abernathy;GT Thaler;RM Frazier

  • ZnO Doped With Transition Metal Ions

    S.J. Pearton;D.P. Norton;M.P. Mil;A.F. Hebard

  • Room temperature deposited indium zinc oxide thin film transistors

    Yu-Lin Wang;F. Ren;Wantae Lim;D. P. Norton

  • Spectral and time-resolved photoluminescence studies of Eu-doped GaN

    Ei Ei Nyein;U. Hömmerich;J. Heikenfeld;D. S. Lee

  • Luminescence properties of erbium in III–V compound semiconductors

    J.M. Zavada;Duhua Zhang

  • Prospects for rare earth doped GaN lasers on Si

    Andrew J. Steckl;Jeong Ho Park;John M. Zavada

  • Ferromagnetism in Mn- and Co-implanted ZnO nanorods

    K. Ip;R. M. Frazier;Y. W. Heo;D. P. Norton

  • PHOTOLUMINESCENCE SPECTROSCOPY OF ERBIUM IMPLANTED GALLIUM NITRIDE

    Myo Thaik;U. Hömmerich;R. N. Schwartz;R. G. Wilson

  • Thermal Stability of Ion-implanted Hydrogen in ZnO

    K Ip;M E Overberg;Y W Heo;D P Norton

  • Er doping of GaN during growth by metalorganic molecular beam epitaxy

    J. D. MacKenzie;C. R. Abernathy;S. J. Pearton;U. Hömmerich

  • Thermal stability of implanted dopants in GaN

    R. G. Wilson;S. J. Pearton;C. R. Abernathy;J. M. Zavada

  • Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN

    U Hömmerich;Ei Ei Nyein;D.S Lee;J Heikenfeld

  • Proton implantation effects on electrical and recombination properties of undoped ZnO

    A. Y. Polyakov;N. B. Smirnov;A. V. Govorkov;E. A. Kozhukhova

  • Ferromagnetism in Transition-Metal Doped ZnO

    S. J. Pearton;D. P. Norton;M. P. Ivill;A. F. Hebard

  • Hydrogenation of GaN, AlN, and InN

    J. M. Zavada;R. G. Wilson;C. R. Abernathy;S. J. Pearton

  • Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

    M. J. Reed;F. E. Arkun;E. A. Berkman;N. A. Elmasry

  • ZnO Doped with Transition Metal Ions

    Stephen J. Pearton;David P. Norton;Matt P. Ivill;Art F. Hebard

Frequent Co-Authors

Stephen J. Pearton
Stephen J. Pearton University of Florida
C. R. Abernathy
C. R. Abernathy University of Florida
R. G. Wilson
R. G. Wilson General Motors (United States)
Fan Ren
Fan Ren University of Florida
Arthur F. Hebard
Arthur F. Hebard University of Florida
David P. Norton
David P. Norton University of Florida
J. D. MacKenzie
J. D. MacKenzie University of Washington
A. Y. Polyakov
A. Y. Polyakov National University of Science and Technology
Andrew J. Steckl
Andrew J. Steckl University of Cincinnati
Hongxing Jiang
Hongxing Jiang Texas Tech University

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