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D-Index & Metrics

Physics

D-Index
95
Citations
36750
World Ranking
1921
National Ranking
998

Research.com Recognitions

  • 2007 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 1995 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 1992 - Fellow of the Indian National Academy of Engineering (INAE)

Overview

Richard M. Martin is affiliated with the University of Illinois at Urbana-Champaign in the United States. Their research spans several main fields of study, including Physics and Astronomy as well as Materials Science. Within these areas, the scientist focuses on subfields such as Atomic and Molecular Physics, and Optics, Materials Chemistry, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Geophysics.

The primary research topics covered by Richard M. Martin include:

  • Topological Materials and Phenomena
  • Advanced Condensed Matter Physics
  • Advanced Chemical Physics Studies
  • Graphene research and applications
  • High-pressure geophysics and materials
  • Magnetic and transport properties of perovskites and related materials
  • Quantum many-body systems

The scientist has published extensively in various venues, with frequent contributions to:

  • Electronic Structure
  • Physical review. B./Physical review. B
  • arXiv (Cornell University)
  • SciPost Physics
  • UNC Libraries

Recent published papers include:

  • Electronic structure and magnetism of the triple-layered ruthenate Sr₄Ru₃O₁₀, 2022, Physical review. B./Physical review. B
  • Optical bounds on many-electron localization, 2025, SciPost Physics
  • Layer-dependent spin-resolved electronic structure of ferromagnetic triple-layered ruthenate Sr₄Ru₃O₁₀, 2025, Physical review. B./Physical review. B
  • Layer-dependent spin-resolved electronic structure of ferromagnetic triple-layered ruthenate Sr₄Ru₃O₁₀, 2023, arXiv (Cornell University)
  • Adiabatic Approximation, 2020, Electronic Structure

Among coauthors frequently collaborating with Richard M. Martin are:

  • G. Gebreyesus
  • Prosper Ngabonziza
  • Ivo Souza
  • Massimiliano Stengel
  • Jonathan D. Denlinger

Richard M. Martin has also contributed to academic literature through book publications, including an influential book titled Electronic Structure, published in 2020 by Cambridge University Press.

The scientist has received recognition through awards such as being named a Fellow of the American Association for the Advancement of Science (AAAS) twice, in 1995 and 2007, and a Fellow of the Indian National Academy of Engineering (INAE) in 1992.

Best Publications

  • Electronic Structure: Basic Theory and Practical Methods

    Richard M. Martin

  • Theoretical calculations of heterojunction discontinuities in the Si/Ge system.

    Chris G. Van de Walle;Richard M. Martin

  • Elastic Properties of ZnS Structure Semiconductors

    Richard M. Martin

  • The SIESTA method; developments and applicability.

    Emilio Artacho;Emilio Artacho;E Anglada;O Diéguez;J D Gale

  • Quantum-mechanical theory of stress and force.

    O. H. Nielsen;Richard M. Martin

  • First-principles study of the atomic reconstructions and energies of Ga- and As-stabilized GaAs(100) surfaces

    Guo-Xin Qian;Richard M. Martin;D. J. Chadi

  • Theoretical study of band offsets at semiconductor interfaces

    Chris G. Van de Walle;Richard M. Martin

  • Microscopic theory of force constants in the adiabatic approximation

    Robert M. Pick;Morrel H. Cohen;Richard M. Martin

  • Light scattering study of boron nitride microcrystals

    R. J. Nemanich;S. A. Solin;Richard M. Martin

  • First-Principles Calculation of Stress

    O. H. Nielsen;Richard M. Martin

  • Calculated effective Hamiltonian for La2CuO4 and solution in the impurity Anderson approximation.

    A. K. McMahan;Richard M. Martin;S. Satpathy

  • Kondo Volume Collapse and the γ → α Transition in Cerium

    J. W. Allen;Richard M. Martin

  • Stresses in semiconductors: Ab initio calculations on Si, Ge, and GaAs.

    O. H. Nielsen;Richard M. Martin

  • Origin of the two-dimensional electron gas carrier density at the LaAlO3 on SrTiO3 interface.

    Zoran S. Popović;Sashi Satpathy;Richard M. Martin

  • Unconstrained minimization approach for electronic computations that scales linearly with system size.

    Pablo Ordejón;David A. Drabold;Matthew P. Grumbach;Richard M. Martin

  • Structural and electronic properties of amorphous carbon.

    Giulia Galli;Richard M. Martin;Roberto Car;Michele Parrinello

  • Linear system-size scaling methods for electronic-structure calculations.

    Pablo Ordejón;David A. Drabold;Richard M. Martin;Matthew P. Grumbach

  • Ground state and phase transitions in solid C 60

    Jian Ping Lu;X.-P. Li;Richard M. Martin

  • Polarization and localization in insulators: Generating function approach

    Ivo Souza;Tim Wilkens;Richard M. Martin

  • Low-Temperature Specific Heat of CeCu2Si2 and CeAl3: Coherence Effects in Kondo Lattice Systems

    C. D. Bredl;S. Horn;F. Steglich;B. Lüthi

Frequent Co-Authors

David M. Ceperley
David M. Ceperley University of Illinois at Urbana-Champaign
Olle Gunnarsson
Olle Gunnarsson Max Planck Society
Daniel Sánchez-Portal
Daniel Sánchez-Portal University of the Basque Country
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
Pablo Ordejón
Pablo Ordejón Institut Català de Nanociència i Nanotecnologia
David A. Drabold
David A. Drabold Ohio University
Richard J. Needs
Richard J. Needs University of Cambridge
Roberto Car
Roberto Car Princeton University
Giulia Galli
Giulia Galli University of Chicago

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