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Physics

D-Index
104
Citations
41509
World Ranking
1436
National Ranking
125

Overview

Friedhelm Bechstedt is affiliated with Friedrich Schiller University Jena in Germany. Their research spans multiple fields including Materials Science, Physics and Astronomy, and Engineering. Within these fields, their work often focuses on subfields such as Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Biomedical Engineering, and Inorganic Chemistry.

The scientist's main research topics include:

  • Graphene research and applications
  • 2D Materials and Applications
  • Semiconductor materials and interfaces
  • Silicon Nanostructures and Photoluminescence
  • Topological Materials and Phenomena
  • Nanowire Synthesis and Applications
  • Semiconductor materials and devices

Frequent publication venues where Friedhelm Bechstedt's work appears include:

  • Physical review. B./Physical review. B (7 publications)
  • Physical Review Materials (5 publications)
  • arXiv (Cornell University) (5 publications)
  • Scientific Reports (3 publications)
  • The Journal of Physical Chemistry C (2 publications)

Their research collaborations include frequent co-authorship with Silvana Botti, Olivia Pulci, J. Furthmüller, Paola Gori, and Abderrezak Belabbes.

Selected recent papers authored or co-authored by Friedhelm Bechstedt are:

  • "Beyond graphene: Clean, hydrogenated and halogenated silicene, germanene, stanene, and plumbene," 2021, Progress in Surface Science
  • "Direct-bandgap emission from hexagonal Ge and SiGe alloys," 2020, Nature
  • "Giant excitonic absorption and emission in two-dimensional group-III nitrides," 2020, Cineca Institutional Research Information System (Tor Vergata University)
  • "Efficient strain-induced light emission in lonsdaleite germanium," 2021, Physical Review Materials
  • "Direct bandgap quantum wells in hexagonal Silicon Germanium," 2024, Nature Communications

Best Publications

  • Linear optical properties in the projector-augmented wave methodology

    M. Gajdoš;K. Hummer;G. Kresse;J. Furthmüller

  • Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap.

    V.Yu. Davydov;A.A. Klochikhin;R.P. Seisyan;V.V. Emtsev

  • Semiempirical van der Waals correction to the density functional description of solids and molecular structures

    F. Ortmann;F. Bechstedt;W. G. Schmidt

  • Quasiparticle band structure based on a generalized Kohn-Sham scheme

    F. Fuchs;J. Furthmüller;F. Bechstedt;M. Shishkin

  • Properties of strained wurtzite GaN and AlN: Ab initio studies

    J.-M. Wagner;F. Bechstedt

  • Band Gap of Hexagonal InN and InGaN Alloys

    V.Yu. Davydov;A.A. Klochikhin;V.V. Emtsev;D.A. Kurdyukov

  • Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

    V.Yu. Davydov;A.A. Klochikhin;V.V. Emtsev;S.V. Ivanov

  • First-principles study of ground- and excited-state properties of MgO , ZnO , and CdO polymorphs

    A. Schleife;F. Fuchs;J. Furthmüller;F. Bechstedt

  • Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3

    P. D. C. King;T. D. Veal;F. Fuchs;Ch. Y. Wang

  • Absolute surface energies of group-IV semiconductors: Dependence on orientation and reconstruction

    A. A. Stekolnikov;J. Furthmüller;F. Bechstedt

  • Direct-bandgap emission from hexagonal Ge and SiGe alloys

    Elham M. T. Fadaly;Alain Dijkstra;Jens Renè Suckert;Dorian Ziss

  • Direct band gap Wurtzite gallium phosphide nanowires

    S Simone Assali;I Ilaria Zardo;SR Sebastien Plissard;D Kriegner

  • Polytypism and Properties of Silicon Carbide

    F. Bechstedt;P. Käckell;A. Zywietz;K. Karch

  • Principles of Surface Physics

    Friedhelm Bechstedt

  • Attracted by long-range electron correlation: adenine on graphite.

    F Ortmann;W G Schmidt;F Bechstedt

  • Quasiparticle band structures of the antiferromagnetic transition-metal oxides MnO, FeO, CoO, and NiO

    C. Rödl;F. Fuchs;J. Furthmüller;F. Bechstedt

  • Optical properties of semiconductors using projector-augmented waves

    B. Adolph;J. Furthmüller;F. Bechstedt

  • Ab initio lattice dynamics of BN and AlN: Covalent versus ionic forces

    Krystian Karch;Friedhelm Bechstedt

  • Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure

    A. Zywietz;J. Furthmüller;F. Bechstedt

  • Semiconductor surfaces and interfaces: Their atomic and electronic structures

    Friedhelm Bechstedt;Rolf Enderlein

Frequent Co-Authors

Wolf Gero Schmidt
Wolf Gero Schmidt University of Paderborn
Jerry Bernholc
Jerry Bernholc North Carolina State University
Tim D. Veal
Tim D. Veal University of Liverpool
Christopher McConville
Christopher McConville Deakin University
Louis F. J. Piper
Louis F. J. Piper University of Warwick
William J. Schaff
William J. Schaff Cornell University
Georg Kresse
Georg Kresse University of Vienna
Erik P. A. M. Bakkers
Erik P. A. M. Bakkers Eindhoven University of Technology
Silvana Botti
Silvana Botti Friedrich Schiller University Jena
Marcel A. Verheijen
Marcel A. Verheijen Eindhoven University of Technology

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