World's Best Scientists 2026 revealed!
Xinqiang Wang

Xinqiang Wang

D-Index & Metrics

Engineering and Technology

D-Index
48
Citations
8531
World Ranking
4592
National Ranking
894

Xinqiang Wang publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Xinqiang Wang sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 343 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Xinqiang Wang D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Xinqiang Wang sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 48 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Xinqiang Wang is affiliated with Peking University in China and has an extensive publication record primarily in the fields of Engineering, Materials Science, and Physics and Astronomy. Their research spans various subfields, including Condensed Matter Physics, Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

Wang's work focuses on key topics such as GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, semiconductor materials and devices, metal and thin film mechanics, semiconductor quantum structures and devices, and acoustic wave resonator technologies.

Recent papers by Wang include:

  • Dual Antiplatelet Therapy vs Alteplase for Patients With Minor Nondisabling Acute Ischemic Stroke, 2023, JAMA
  • Focus on perovskite emitters in blue light-emitting diodes, 2023, Light Science & Applications
  • Designed growth of large bilayer graphene with arbitrary twist angles, 2022, Nature Materials
  • Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source, 2020, Advanced Functional Materials
  • Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals, 2024, Science

Wang frequently collaborates with a number of co-authors, including Bo Shen, Weikun Ge, Fujun Xu, Xuelin Yang, and Tao Wang.

Their publications are often featured in venues such as Applied Physics Letters, Advanced Functional Materials, Nature Communications, Advanced Materials, and Research Square. Wang has contributed significantly to these journals, with a notable count of papers in Applied Physics Letters and Advanced Functional Materials.

Best Publications

  • Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2

    Hongtao Yuan;Hongtao Yuan;Xinqiang Wang;Biao Lian;Haijun Zhang

  • Molecular beam epitaxy growth of GaN, AlN and InN

    Xinqiang Wang;Akihiko Yoshikawa

  • Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

    Xinqiang Wang;Shuren Yang;Jinzhong Wang;Mingtao Li

  • Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

    A. Yoshikawa;S. B. Che;W. Yamaguchi;H. Saito

  • Designed growth of large bilayer graphene with arbitrary twist angles

    Unknown

  • High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.

    Lisheng Zhang;Fujun Xu;Jiaming Wang;Chenguang He

  • Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions

    Yuantao Zhang;Guotong Du;Dali Liu;Xinqiang Wang

  • Model calculation for the field enhancement factor of carbon nanotube

    X. Q. Wang;M. Wang;P. M. He;Y. B. Xu

  • X-ray photoelectron spectroscopy study of ZnO films grown by metal-organic chemical vapor deposition

    Yuantao Zhang;Guotong Du;Xinqiang Wang;Wancheng Li

  • Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al2O3 by metal-organic chemical vapor deposition

    Xiaotian Yang;Guotong Du;Xinqiang Wang;Jinzhong Wang

  • High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

    Xinqiang Wang;Shitao Liu;Nan Ma;Li Feng

  • Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously

    Unknown

  • Phonon lifetimes and phonon decay in InN

    James W Pomeroy;Martin H H Kuball;H Lu;WJ Schaff

  • Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy

    Xinqiang Wang;Yosuke Tomita;Ok-Hwan Roh;Masayuki Ohsugi

  • Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy

    Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa

  • Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities

    Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa

  • Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel.

    Unknown

  • Synthesis of graphene on a polycrystalline Co film by radio-frequency plasma-enhanced chemical vapour deposition

    S M Wang;Y H Pei;X Wang;H Wang

  • High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

    Xin Rong;Xinqiang Wang;Sergey V. Ivanov;Xinhe Jiang

  • Threading dislocations in In-polar InN films and their effects on surface morphology and electrical properties

    Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa

  • Growth and properties of Mg-doped In-polar InN films

    Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa

  • Electrochemical sulfur passivation of GaAs

    X. Y. Hou;W. Z. Cai;Z. Q. He;P. H. Hao

  • Hole mobility in Mg-doped p-type InN films

    Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa

  • Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source.

    Shangfeng Liu;Wei Luo;Dan Li;Ye Yuan

Frequent Co-Authors

Tao Wang
Tao Wang Stanford University
Fang Liu
Fang Liu Beihang University
B. G. Shen
B. G. Shen Chinese Academy of Sciences
Feng Xu
Feng Xu Xi'an Jiaotong University
Guotong Du
Guotong Du Jilin University
Jie Song
Jie Song Emory University
Lei Guo
Lei Guo Beijing University of Posts and Telecommunications
Tadeusz Suski
Tadeusz Suski Polish Academy of Sciences
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Zongyou Yin
Zongyou Yin Australian National University

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