World's Best Scientists 2026 revealed!
Xinqiang Wang

Xinqiang Wang

D-Index & Metrics

Engineering and Technology

D-Index
48
Citations
8531
World Ranking
4590
National Ranking
896

Overview

Xinqiang Wang is affiliated with Peking University in China and has an extensive publication record primarily in the fields of Engineering, Materials Science, and Physics and Astronomy. Their research spans various subfields, including Condensed Matter Physics, Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

Wang's work focuses on key topics such as GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, semiconductor materials and devices, metal and thin film mechanics, semiconductor quantum structures and devices, and acoustic wave resonator technologies.

Recent papers by Wang include:

  • Dual Antiplatelet Therapy vs Alteplase for Patients With Minor Nondisabling Acute Ischemic Stroke, 2023, JAMA
  • Focus on perovskite emitters in blue light-emitting diodes, 2023, Light Science & Applications
  • Designed growth of large bilayer graphene with arbitrary twist angles, 2022, Nature Materials
  • Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source, 2020, Advanced Functional Materials
  • Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals, 2024, Science

Wang frequently collaborates with a number of co-authors, including Bo Shen, Weikun Ge, Fujun Xu, Xuelin Yang, and Tao Wang.

Their publications are often featured in venues such as Applied Physics Letters, Advanced Functional Materials, Nature Communications, Advanced Materials, and Research Square. Wang has contributed significantly to these journals, with a notable count of papers in Applied Physics Letters and Advanced Functional Materials.

Best Publications

  • Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2

    Hongtao Yuan;Hongtao Yuan;Xinqiang Wang;Biao Lian;Haijun Zhang

  • Molecular beam epitaxy growth of GaN, AlN and InN

    Xinqiang Wang;Akihiko Yoshikawa

  • Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

    Xinqiang Wang;Shuren Yang;Jinzhong Wang;Mingtao Li

  • Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

    A. Yoshikawa;S. B. Che;W. Yamaguchi;H. Saito

  • Designed growth of large bilayer graphene with arbitrary twist angles

    Unknown

  • High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.

    Lisheng Zhang;Fujun Xu;Jiaming Wang;Chenguang He

  • Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions

    Yuantao Zhang;Guotong Du;Dali Liu;Xinqiang Wang

  • Model calculation for the field enhancement factor of carbon nanotube

    X. Q. Wang;M. Wang;P. M. He;Y. B. Xu

  • X-ray photoelectron spectroscopy study of ZnO films grown by metal-organic chemical vapor deposition

    Yuantao Zhang;Guotong Du;Xinqiang Wang;Wancheng Li

  • Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al2O3 by metal-organic chemical vapor deposition

    Xiaotian Yang;Guotong Du;Xinqiang Wang;Jinzhong Wang

  • High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

    Xinqiang Wang;Shitao Liu;Nan Ma;Li Feng

  • Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously

    Unknown

  • Phonon lifetimes and phonon decay in InN

    James W Pomeroy;Martin H H Kuball;H Lu;WJ Schaff

  • Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy

    Xinqiang Wang;Yosuke Tomita;Ok-Hwan Roh;Masayuki Ohsugi

  • Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy

    Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa

  • Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities

    Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa

  • Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel.

    Unknown

  • Synthesis of graphene on a polycrystalline Co film by radio-frequency plasma-enhanced chemical vapour deposition

    S M Wang;Y H Pei;X Wang;H Wang

  • High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

    Xin Rong;Xinqiang Wang;Sergey V. Ivanov;Xinhe Jiang

  • Threading dislocations in In-polar InN films and their effects on surface morphology and electrical properties

    Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa

  • Growth and properties of Mg-doped In-polar InN films

    Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa

  • Electrochemical sulfur passivation of GaAs

    X. Y. Hou;W. Z. Cai;Z. Q. He;P. H. Hao

  • Hole mobility in Mg-doped p-type InN films

    Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa

  • Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source.

    Shangfeng Liu;Wei Luo;Dan Li;Ye Yuan

Frequent Co-Authors

Tao Wang
Tao Wang Stanford University
Fang Liu
Fang Liu Beihang University
B. G. Shen
B. G. Shen Chinese Academy of Sciences
Feng Xu
Feng Xu Xi'an Jiaotong University
Guotong Du
Guotong Du Jilin University
Jie Song
Jie Song Emory University
Lei Guo
Lei Guo Beijing University of Posts and Telecommunications
Tadeusz Suski
Tadeusz Suski Polish Academy of Sciences
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Zongyou Yin
Zongyou Yin Australian National University

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