His primary scientific interests are in Analytical chemistry, Molecular beam epitaxy, Optoelectronics, Condensed matter physics and Epitaxy. His Analytical chemistry study integrates concerns from other disciplines, such as Thin film and Acceptor. His work carried out in the field of Molecular beam epitaxy brings together such families of science as Electron density and Doping.
His work in Optoelectronics is not limited to one particular discipline; it also encompasses Transistor. His Condensed matter physics study which covers Monolayer that intersects with Quantum well. Xinqiang Wang works mostly in the field of Epitaxy, limiting it down to topics relating to Sapphire and, in certain cases, Full width at half maximum and Diffraction.
The scientist’s investigation covers issues in Optoelectronics, Condensed matter physics, Analytical chemistry, Molecular beam epitaxy and Wide-bandgap semiconductor. The concepts of his Optoelectronics study are interwoven with issues in Quantum well, Layer, Epitaxy and Sapphire. His Condensed matter physics research incorporates elements of Wurtzite crystal structure, Semiconductor and Photoconductivity.
His Analytical chemistry study combines topics in areas such as Thin film and Mineralogy. His Molecular beam epitaxy study incorporates themes from Crystallography, Crystal growth, Electron density and Doping. His Photoluminescence research includes themes of Metalorganic vapour phase epitaxy, Chemical vapor deposition, Monolayer, Exciton and Quantum dot.
His primary areas of study are Optoelectronics, Sapphire, Diode, Epitaxy and Layer. Many of his studies involve connections with topics such as Quantum well and Optoelectronics. His work deals with themes such as Metalorganic vapour phase epitaxy, Composite material and Vacancy defect, which intersect with Sapphire.
His study looks at the relationship between Metalorganic vapour phase epitaxy and fields such as Carbon impurities, as well as how they intersect with chemical problems. His Diode study also includes fields such as
Xinqiang Wang mainly focuses on Optoelectronics, Diode, Sapphire, Epitaxy and Light-emitting diode. His Optoelectronics research is multidisciplinary, incorporating perspectives in Quantum well and Layer. Many of his studies on Sapphire apply to Wide-bandgap semiconductor as well.
His research in Wide-bandgap semiconductor intersects with topics in Ultimate tensile strength, Composite material, Electron density and Electronic band structure. The Epitaxy study combines topics in areas such as Stress and Lattice constant. He interconnects Nanowire, Full width at half maximum, Thin film, Reflection high-energy electron diffraction and Analytical chemistry in the investigation of issues within Molecular beam epitaxy.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2
Hongtao Yuan;Hongtao Yuan;Xinqiang Wang;Biao Lian;Haijun Zhang.
Nature Nanotechnology (2014)
Molecular beam epitaxy growth of GaN, AlN and InN
Xinqiang Wang;Akihiko Yoshikawa.
Progress in Crystal Growth and Characterization of Materials (2004)
Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix
A. Yoshikawa;S. B. Che;W. Yamaguchi;H. Saito.
Applied Physics Letters (2007)
Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al2O3 by metal-organic chemical vapor deposition
Xiaotian Yang;Guotong Du;Xinqiang Wang;Jinzhong Wang.
Journal of Crystal Growth (2003)
X-ray photoelectron spectroscopy study of ZnO films grown by metal-organic chemical vapor deposition
Yuantao Zhang;Guotong Du;Xinqiang Wang;Wancheng Li.
Journal of Crystal Growth (2003)
High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
Xinqiang Wang;Shitao Liu;Nan Ma;Li Feng.
Applied Physics Express (2012)
Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy
Xinqiang Wang;Yosuke Tomita;Ok-Hwan Roh;Masayuki Ohsugi.
Applied Physics Letters (2005)
Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities
Xinqiang Wang;Song-Bek Che;Yoshihiro Ishitani;Akihiko Yoshikawa.
Applied Physics Letters (2007)
Synthesis of graphene on a polycrystalline Co film by radio-frequency plasma-enhanced chemical vapour deposition
S M Wang;Y H Pei;X Wang;H Wang.
Journal of Physics D (2010)
Electrochemical sulfur passivation of GaAs
X. Y. Hou;W. Z. Cai;Z. Q. He;P. H. Hao.
Applied Physics Letters (1992)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
Stanford University
Chinese Academy of Sciences
Xi'an Jiaotong University
Beijing University of Posts and Telecommunications
Emory University
Polish Academy of Sciences
Otto-von-Guericke University Magdeburg
Northwestern University
Helmholtz-Zentrum Dresden-Rossendorf
Australian National University