The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where B. G. Shen sits on this spectrum.
This scientist: 798 publications — 97th percentile
97% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where B. G. Shen sits on this spectrum.
This scientist: 77 D-Index — 76th percentile
76% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
B. G. Shen is affiliated with the Chinese Academy of Sciences in China and works primarily in the fields of materials science and physics and astronomy. Their research spans multiple subfields, including electronic, optical and magnetic materials, materials chemistry, atomic and molecular physics and optics, condensed matter physics, and biomedical engineering.
The scientist's main research topics encompass magnetic properties of thin films, ferroelectric and piezoelectric materials, multiferroics and related materials, magnetic and transport properties of perovskites and related materials, dielectric materials and actuators, microwave dielectric ceramics synthesis, and Heusler alloys focusing on electronic and magnetic properties.
B. G. Shen has contributed to several journals, with frequent publications appearing in Journal of Magnetism and Magnetic Materials, Materials Today Physics, Applied Physics Letters, Journal of Alloys and Compounds, and SSRN Electronic Journal.
Frequent co-authors of B. G. Shen include Fengzhen Huang, Xueli Hu, Xiaomei Lü, Yan Zhang, and Tong Zhao, reflecting collaboration across multiple projects and papers.
Representative papers by B. G. Shen and collaborators include:
Feng-xia Hu;Bao-gen Shen;Ji-rong Sun;Zhao-hua Cheng
B. G. Shen;J. R. Sun;F. X. Hu;H. W. Zhang
Feng-xia Hu;Bao-gen Shen;Ji-rong Sun
Yunzhong Chen;N. Bovet;Felix Trier;Dennis Christensen
G. J. Liu;J. R. Sun;J. Shen;B. Gao
Feng-xia Hu;Bao-gen Shen;Ji-rong Sun;Guang-heng Wu
Feng-xia Hu;Bao-gen Shen;Ji-rong Sun;Guang-jun Wang
Yujing Zhang;Tianyu Ma;Jiaying Jin;Jiangtao Li
Ruisheng Guo;Jiangtao Chen;Bingjun Yang;Lingyang Liu
Z.B. Li;Z.B. Li;B.G. Shen;M. Zhang;F.X. Hu
T. Zhu;B. G. Shen;J. R. Sun;H. W. Zhao
Ying-Ying Zhao;Feng-Xia Hu;Li-Fu Bao;Jing Wang
Q. Y. Dong;H. W. Zhang;J. R. Sun;B. G. Shen
J. Chen;B. G. Shen;Q. Y. Dong;F. X. Hu
J. R. Sun;F. X. Hu;B. G. Shen
Baoshou Shen;Baoshou Shen;Jijun Ding;Xingbin Yan;Wangjun Feng
Baoshou Shen;Ruisheng Guo;Junwei Lang;Li Liu
H. Zhang;B. G. Shen;Z. Y. Xu;J. Shen
J. Chen;B. G. Shen;Q. Y. Dong;F. X. Hu
Yuan-fu Chen;Fang Wang;Bao-gen Shen;Guang-jun Wang
J. R. Sun;C. F. Yeung;K. Zhao;L. Z. Zhou
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