World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
79
Citations
29274
World Ranking
2768
National Ranking
887

Guangyu Zhang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Guangyu Zhang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 327 publications — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Guangyu Zhang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Guangyu Zhang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 79 D-Index — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Guangyu Zhang is affiliated with the Chinese Academy of Sciences in China. Their research spans several fields within economics, business, and management, with a focus on innovation and economic growth.

The main fields of study for Guangyu Zhang include:

  • Economics, Econometrics and Finance
  • Business, Management and Accounting

Their subfields of study are concentrated in:

  • Economics and Econometrics
  • Strategy and Management

Guangyu Zhang's work covers key topics such as:

  • Innovation and Knowledge Management
  • Energy, Environment, Economic Growth
  • Economic and Technological Innovation

The scientist has published research primarily in the venue Systems, with at least one publication there.

One recent paper authored by a frequent collaborator, Renjie Hu, in which Guangyu Zhang was involved, is titled "Developing an Evaluation Index System for Enterprise Niche." This paper was published in 2023 in the journal Systems.

Frequent coauthors include:

  • Renjie Hu
  • Steve Conway
  • Xueying Liu
  • Chen Chen

Best Publications

  • Highly conducting graphene sheets and Langmuir–Blodgett films

    Xiaolin Li;Guangyu Zhang;Xuedong Bai;Xiaoming Sun

  • Superconductors, orbital magnets and correlated states in magic-angle bilayer graphene

    Xiaobo Lu;Petr Stepanov;Wei Yang;Ming Xie

  • Epitaxial growth of single-domain graphene on hexagonal boron nitride

    Wei Yang;Guorui Chen;Zhiwen Shi;Cheng-Cheng Liu;Cheng-Cheng Liu

  • Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity.

    Chuancheng Jia;Agostino Migliore;Na Xin;Shaoyun Huang

  • Super-elastic graphene ripples for flexible strain sensors.

    Yi Wang;Rong Yang;Zhiwen Shi;Lianchang Zhang

  • Selective etching of metallic carbon nanotubes by gas-phase reaction.

    Guangyu Zhang;Pengfei Qi;Xinran Wang;Yuerui Lu

  • General synthesis of two-dimensional van der Waals heterostructure arrays.

    Jia Li;Xiangdong Yang;Yang Liu;Bolong Huang

  • Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen

    Guangyu Zhang;David Mann;Li Zhang;Ali Javey

  • Correlated states in twisted double bilayer graphene

    Cheng Shen;Yanbang Chu;QuanSheng Wu;Na Li

  • Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

    Hua Yu;Mengzhou Liao;Wenjuan Zhao;Guodong Liu

  • Review of graphene-based strain sensors

    Jing Zhao;Jing Zhao;Guang-Yu Zhang;Dong-Xia Shi

  • Boundary activated hydrogen evolution reaction on monolayer MoS2

    Unknown

  • Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures.

    Hailong Chen;Xiewen Wen;Xiewen Wen;Jing Zhang;Tianmin Wu

  • Argon Plasma Induced Phase Transition in Monolayer MoS2

    Jianqi Zhu;Zhichang Wang;Hua Yu;Na Li

  • Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

    Na Li;Qinqin Wang;Cheng Shen;Zheng Wei

  • Retracted: Highly Sensitive MoS2 Humidity Sensors Array for Noncontact Sensation

    Unknown

  • Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2

    Wei Chen;Jing Zhao;Jing Zhang;Lin Gu

  • Ultra-sensitive strain sensors based on piezoresistive nanographene films

    Jing Zhao;Congli He;Rong Yang;Zhiwen Shi

  • Photoinduced doping in heterostructures of graphene and boron nitride

    L. Ju;J. Velasco;E. Huang;S. Kahn

  • Protein microarrays with carbon nanotubes as multicolor Raman labels.

    Zhuo Chen;Scott M Tabakman;Andrew P Goodwin;Michael G Kattah

  • Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes

    Jing Zhang;Hua Yu;Wei Chen;Xuezeng Tian

  • Tubular graphite cones.

    Guangyu Zhang;Guangyu Zhang;Xin Jiang;Xin Jiang;Enge Wang;Enge Wang

Frequent Co-Authors

Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Jian Tang
Jian Tang Syracuse University
Enge Wang
Enge Wang Peking University
Feng Wang
Feng Wang University of California, Berkeley
Hongjie Dai
Hongjie Dai University of Hong Kong
Xuedong Bai
Xuedong Bai Chinese Academy of Sciences
Hong-Jun Gao
Hong-Jun Gao Chinese Academy of Sciences
Zhipei Sun
Zhipei Sun Aalto University
Lin Gu
Lin Gu Chinese Academy of Sciences

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