Makoto Kasu

Overview

Best Publications

• An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  2374
  Citations

• Coherent coupling of a superconducting flux qubit to an electron spin ensemble in diamond

  Xiaobo Zhu;Shiro Saito;Alexander Kemp;Kosuke Kakuyanagi

  529
  Citations

• High-mobility β-Ga2O3() single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

  Toshiyuki Oishi;Yuta Koga;Kazuya Harada;Makoto Kasu

  367
  Citations

• Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN(0.42⩽x<1)

  Yoshitaka Taniyasu;Makoto Kasu;Naoki Kobayashi

  305
  Citations

• Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

  K. Ueda;M. Kasu;Y. Yamauchi;T. Makimoto

  255
  Citations

• Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer

  Kazuyuki Hirama;Hisashi Sato;Yuichi Harada;Hideki Yamamoto

  210
  Citations

• Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

  Yoshitaka Taniyasu;Makoto Kasu

  196
  Citations

• Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  180
  Citations

• 2 W/mm output power density at 1 GHz for diamond FETs

  M. Kasu;K. Ueda;H. Ye;Y. Yamauchi

  170
  Citations

• Carrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interface

  Takayoshi Oshima;Yuji Kato;Naoto Kawano;Akito Kuramata

  156
  Citations

• Diamond-based RF power transistors: Fundamentals and applications

  M. Kasu;K. Ueda;Y. Yamauchi;A. Tallaire

  141
  Citations

• Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process

  Osamu Ueda;Noriaki Ikenaga;Kimiyoshi Koshi;Kazuyuki Iizuka

  139
  Citations

• Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  134
  Citations

• Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

  Yoshitaka Taniyasu;Makoto Kasu

  132
  Citations

• Photoluminescent properties and optical absorption of AlAs/GaAs disordered superlattices

  Teiji Yamamoto;Makoto Kasu;Susumu Noda;Akio Sasaki

  131
  Citations

• Field emission properties of heavily Si-doped AlN in triode-type display structure

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  129
  Citations

• Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

  Y. Oshima;K. Kawara;T. Shinohe;T. Hitora

  127
  Citations

• Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  125
  Citations

• AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

  Kazuyuki Hirama;Yoshitaka Taniyasu;Makoto Kasu

  117
  Citations

• Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al2O3 Overlayer and its Electric Properties

  Makoto Kasu;Hisashi Sato;Kazuyuki Hirama

  110
  Citations

• Equilibrium multiatomic step structure of GaAs(001) vicinal surfaces grown by metalorganic chemical vapor deposition

  Makoto Kasu;Naoki Kobayashi

  109
  Citations