World's Best Scientists 2026 revealed!
Makoto Kasu

Makoto Kasu

D-Index & Metrics

Materials Science

D-Index
53
Citations
11386
World Ranking
9160
National Ranking
534

Makoto Kasu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Makoto Kasu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 308 publications — 62nd percentile

62% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Makoto Kasu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Makoto Kasu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 53 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Makoto Kasu is affiliated with Saga University in Japan, focusing on research in materials science and engineering. Their scholarly work predominantly explores materials chemistry and electrical and electronic engineering, encompassing areas such as mechanics of materials, electronic, optical and magnetic materials, and sustainability-related topics.

The scientist's research centers around several main topics including diamond and carbon-based materials research, semiconductor materials and devices, metal and thin film mechanics, Ga2O3 and related materials, ZnO doping and properties, electronic and structural properties of oxides, and advancements in semiconductor devices and circuit design.

Kasu has contributed to a range of publications, with notable papers such as:

  • Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design (2021, Advanced Materials)
  • Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (1120) misoriented substrate by step-flow mode (2021, Applied Physics Express)
  • Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes (2021, Applied Physics Letters)
  • 345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond (2021, IEEE Electron Device Letters)
  • Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy (2020, Applied Physics Letters)

Frequently collaborating with other researchers, Kasu's common coauthors include Toshiyuki Oishi, Niloy Chandra Saha, Seong-Woo Kim, Sayleap Sdoeung, and Kohei Sasaki.

Their publications often appear in journals such as:

  • IEEE Electron Device Letters
  • Japanese Journal of Applied Physics
  • Applied Physics Letters
  • Applied Physics Express
  • Diamond and Related Materials

Kasu's work involves investigation into semiconductor and dielectric materials, with a particular focus on Ga2O3 and diamond-based devices. This includes studies on heterointerfaces, epitaxial growth techniques, structural defects affecting device performance, and doping effects in wide bandgap semiconductors.

The research spans both fundamental materials chemistry and applied engineering aspects, linking electronic properties to structural characteristics and device functionalities. Kasu's contribution to diamond MOSFETs and Schottky barrier diodes highlights an interest in advancing power and electronic device performance through material innovations.

Best Publications

  • An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

    Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  • Coherent coupling of a superconducting flux qubit to an electron spin ensemble in diamond

    Xiaobo Zhu;Shiro Saito;Alexander Kemp;Kosuke Kakuyanagi

  • High-mobility β-Ga2O3() single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

    Toshiyuki Oishi;Yuta Koga;Kazuya Harada;Makoto Kasu

  • Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN(0.42⩽x<1)

    Yoshitaka Taniyasu;Makoto Kasu;Naoki Kobayashi

  • Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

    K. Ueda;M. Kasu;Y. Yamauchi;T. Makimoto

  • Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer

    Kazuyuki Hirama;Hisashi Sato;Yuichi Harada;Hideki Yamamoto

  • Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

    Yoshitaka Taniyasu;Makoto Kasu

  • Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)

    Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  • 2 W/mm output power density at 1 GHz for diamond FETs

    M. Kasu;K. Ueda;H. Ye;Y. Yamauchi

  • Carrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interface

    Takayoshi Oshima;Yuji Kato;Naoto Kawano;Akito Kuramata

  • Diamond-based RF power transistors: Fundamentals and applications

    M. Kasu;K. Ueda;Y. Yamauchi;A. Tallaire

  • Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process

    Osamu Ueda;Noriaki Ikenaga;Kimiyoshi Koshi;Kazuyuki Iizuka

  • Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate

    Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  • Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

    Yoshitaka Taniyasu;Makoto Kasu

  • Photoluminescent properties and optical absorption of AlAs/GaAs disordered superlattices

    Teiji Yamamoto;Makoto Kasu;Susumu Noda;Akio Sasaki

  • Field emission properties of heavily Si-doped AlN in triode-type display structure

    Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  • Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

    Y. Oshima;K. Kawara;T. Shinohe;T. Hitora

  • Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

    Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  • AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

    Kazuyuki Hirama;Yoshitaka Taniyasu;Makoto Kasu

  • Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al2O3 Overlayer and its Electric Properties

    Makoto Kasu;Hisashi Sato;Kazuyuki Hirama

  • Equilibrium multiatomic step structure of GaAs(001) vicinal surfaces grown by metalorganic chemical vapor deposition

    Makoto Kasu;Naoki Kobayashi

Frequent Co-Authors

Naoki Kobayashi
Naoki Kobayashi University of Electro-Communications
Toshiki Makimoto
Toshiki Makimoto Waseda University
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc
Hitoshi Sumiya
Hitoshi Sumiya Sumitomo Electric Industries (United States)
Susumu Noda
Susumu Noda Kyoto University
Takashi Fukui
Takashi Fukui Hokkaido University
Erhard Kohn
Erhard Kohn North Carolina State University
Shizuo Fujita
Shizuo Fujita Kyoto University
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)

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