World's Best Scientists 2026 revealed!
Hiroshi Kawarada

Hiroshi Kawarada

D-Index & Metrics

Materials Science

D-Index
65
Citations
14112
World Ranking
5665
National Ranking
275

Hiroshi Kawarada publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Hiroshi Kawarada sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 603 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Hiroshi Kawarada D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Hiroshi Kawarada sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 65 D-Index — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Hiroshi Kawarada is affiliated with Waseda University in Japan and has contributed extensively to research in engineering and materials science. Their work primarily focuses on electrical and electronic engineering and materials chemistry, with further engagement in condensed matter physics, mechanics of materials, and electronic, optical, and magnetic materials.

The main topics addressed in Kawarada's research include:

  • Diamond and carbon-based materials research
  • Semiconductor materials and devices
  • Metal and thin film mechanics
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Analytical chemistry and sensors
  • Advancements in semiconductor devices and circuit design

Kawarada's recent publications illustrate a broad range of interests within these areas. Notable papers include:

  • "Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review," 2022, published in Crystals
  • "Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review," 2022, published in Micromachines
  • "Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator," 2020, published in Applied Physics Letters
  • "Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review," 2021, published in Biosensors
  • "C-Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability," 2021, published in Carbon

Coauthorship patterns highlight collaboration with several frequent partners, including Mohd Syamsul, Atsushi Hiraiwa, Shaili Falina, Yu Fu, and Te Bi. These collaborations encompass various aspects of semiconductor and materials research, contributing to the breadth of Kawarada's scientific output.

Kawarada has contributed multiple papers to prestigious publication venues, among which the most frequent are:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials
  • Carbon
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

The research output of Hiroshi Kawarada spans over 120 publications in engineering and over 90 in materials science, reflecting a sustained and focused engagement in advancing knowledge in electrical and electronic engineering and materials chemistry. Their scholarly record demonstrates a particular emphasis on semiconductor devices, diamond and carbon materials, and the mechanical properties of thin films and metals within these domains.

Best Publications

  • Hydrogen-terminated diamond surfaces and interfaces

    Hiroshi Kawarada

  • Superconductivity in diamond thin films well above liquid helium temperature

    Yoshihiko Takano;Masanori Nagao;Isao Sakaguchi;Minoru Tachiki

  • Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

    Y. Takano;M. Nagao;K. Kobayashi;H. Umezawa

  • Origin of the metallic properties of heavily boron-doped superconducting diamond

    T. Yokoya;T. Nakamura;T. Matsushita;T. Muro

  • C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

    H. Kawarada;H. Tsuboi;T. Naruo;T. Yamada

  • Growth Kinetics of 0.5 cm Vertically Aligned Single-Walled Carbon Nanotubes

    Guofang Zhong;Takayuki Iwasaki;John Robertson;Hiroshi Kawarada

  • Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds

    Hiroshi Kawarada;Makoto Aoki;Masahiro Ito

  • Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

    Yuya Kitabayashi;Takuya Kudo;Hidetoshi Tsuboi;Tetsuya Yamada

  • Large area chemical vapour deposition of diamond particles and films using magneto-microwave plasma

    Hiroshi Kawarada;King Sheng Mar;Akio Hiraki

  • Scanning-tunneling-microscope observation of the homoepitaxial diamond (001) 2×1 reconstruction observed under atmospheric pressure

    Hiroshi Kawarada;Hidehiro Sasaki;Atsuhiro Sato

  • Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface

    Yusuke Mori;Hiroshi Kawarada;Akio Hiraki

  • Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

    T. Paul Chow;Ichiro Omura;Masataka Higashiwaki;Hiroshi Kawarada

  • Low Temperature Synthesis of Extremely Dense and Vertically Aligned Single-Walled Carbon Nanotubes

    Guofang Zhong;Takayuki Iwasaki;Kotaro Honda;Yukio Furukawa

  • Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompatible Ion Sensors

    H. Kawarada;Y. Araki;T. Sakai;T. Ogawa

  • Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

    Unknown

  • Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

    H. Kawarada;T. Suesada;H. Nagasawa

  • Superconducting properties of homoepitaxial CVD diamond

    Y. Takano;T. Takenouchi;S. Ishii;S. Ueda

  • DNA Micropatterning on Polycrystalline Diamond via One-Step Direct Amination

    Guo Jun Zhang;Kwang Soup Song;Yusuke Nakamura;Taro Ueno

  • Excitonic recombination radiation in undoped and boron-doped chemical-vapor-deposited diamonds.

    H. Kawarada;H. Matsuyama;Y. Yokota;T. Sogi

  • Cathodoluminescence and electroluminescence of undoped and boron-doped diamond formed by plasma chemical vapor deposition

    H. Kawarada;Y. Yokota;Y. Mori;K. Nishimura

  • Low temperature grown carbon nanotube interconnects using inner shells by chemical mechanical polishing

    Daisuke Yokoyama;Takayuki Iwasaki;Tsuyoshi Yoshida;Hiroshi Kawarada

  • High-preformance diamond surface-channel field-effect transistors and their operation mechanism

    K Tsugawa;K Kitatani;H Noda;A Hokazono

Frequent Co-Authors

Yoshihiko Takano
Yoshihiko Takano National Institute for Materials Science
Tokuyuki Teraji
Tokuyuki Teraji National Institute for Materials Science
Isao Sakaguchi
Isao Sakaguchi National Institute for Materials Science
Tamio Oguchi
Tamio Oguchi Osaka University
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
John Robertson
John Robertson University of Cambridge
Sherif A. El-Safty
Sherif A. El-Safty National Institute for Materials Science
Chunlei Wang
Chunlei Wang Florida International University
Erhard Kohn
Erhard Kohn North Carolina State University
Zlatko Sitar
Zlatko Sitar North Carolina State University

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