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Hiroshi Kawarada

Hiroshi Kawarada

D-Index & Metrics

Materials Science

D-Index
65
Citations
14112
World Ranking
5667
National Ranking
275

Overview

Hiroshi Kawarada is affiliated with Waseda University in Japan and has contributed extensively to research in engineering and materials science. Their work primarily focuses on electrical and electronic engineering and materials chemistry, with further engagement in condensed matter physics, mechanics of materials, and electronic, optical, and magnetic materials.

The main topics addressed in Kawarada's research include:

  • Diamond and carbon-based materials research
  • Semiconductor materials and devices
  • Metal and thin film mechanics
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Analytical chemistry and sensors
  • Advancements in semiconductor devices and circuit design

Kawarada's recent publications illustrate a broad range of interests within these areas. Notable papers include:

  • "Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review," 2022, published in Crystals
  • "Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review," 2022, published in Micromachines
  • "Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator," 2020, published in Applied Physics Letters
  • "Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review," 2021, published in Biosensors
  • "C-Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability," 2021, published in Carbon

Coauthorship patterns highlight collaboration with several frequent partners, including Mohd Syamsul, Atsushi Hiraiwa, Shaili Falina, Yu Fu, and Te Bi. These collaborations encompass various aspects of semiconductor and materials research, contributing to the breadth of Kawarada's scientific output.

Kawarada has contributed multiple papers to prestigious publication venues, among which the most frequent are:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials
  • Carbon
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

The research output of Hiroshi Kawarada spans over 120 publications in engineering and over 90 in materials science, reflecting a sustained and focused engagement in advancing knowledge in electrical and electronic engineering and materials chemistry. Their scholarly record demonstrates a particular emphasis on semiconductor devices, diamond and carbon materials, and the mechanical properties of thin films and metals within these domains.

Best Publications

  • Hydrogen-terminated diamond surfaces and interfaces

    Hiroshi Kawarada

  • Superconductivity in diamond thin films well above liquid helium temperature

    Yoshihiko Takano;Masanori Nagao;Isao Sakaguchi;Minoru Tachiki

  • Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

    Y. Takano;M. Nagao;K. Kobayashi;H. Umezawa

  • Origin of the metallic properties of heavily boron-doped superconducting diamond

    T. Yokoya;T. Nakamura;T. Matsushita;T. Muro

  • C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

    H. Kawarada;H. Tsuboi;T. Naruo;T. Yamada

  • Growth Kinetics of 0.5 cm Vertically Aligned Single-Walled Carbon Nanotubes

    Guofang Zhong;Takayuki Iwasaki;John Robertson;Hiroshi Kawarada

  • Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds

    Hiroshi Kawarada;Makoto Aoki;Masahiro Ito

  • Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

    Yuya Kitabayashi;Takuya Kudo;Hidetoshi Tsuboi;Tetsuya Yamada

  • Large area chemical vapour deposition of diamond particles and films using magneto-microwave plasma

    Hiroshi Kawarada;King Sheng Mar;Akio Hiraki

  • Scanning-tunneling-microscope observation of the homoepitaxial diamond (001) 2×1 reconstruction observed under atmospheric pressure

    Hiroshi Kawarada;Hidehiro Sasaki;Atsuhiro Sato

  • Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface

    Yusuke Mori;Hiroshi Kawarada;Akio Hiraki

  • Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

    T. Paul Chow;Ichiro Omura;Masataka Higashiwaki;Hiroshi Kawarada

  • Low Temperature Synthesis of Extremely Dense and Vertically Aligned Single-Walled Carbon Nanotubes

    Guofang Zhong;Takayuki Iwasaki;Kotaro Honda;Yukio Furukawa

  • Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompatible Ion Sensors

    H. Kawarada;Y. Araki;T. Sakai;T. Ogawa

  • Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

    Unknown

  • Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

    H. Kawarada;T. Suesada;H. Nagasawa

  • Superconducting properties of homoepitaxial CVD diamond

    Y. Takano;T. Takenouchi;S. Ishii;S. Ueda

  • DNA Micropatterning on Polycrystalline Diamond via One-Step Direct Amination

    Guo Jun Zhang;Kwang Soup Song;Yusuke Nakamura;Taro Ueno

  • Excitonic recombination radiation in undoped and boron-doped chemical-vapor-deposited diamonds.

    H. Kawarada;H. Matsuyama;Y. Yokota;T. Sogi

  • Cathodoluminescence and electroluminescence of undoped and boron-doped diamond formed by plasma chemical vapor deposition

    H. Kawarada;Y. Yokota;Y. Mori;K. Nishimura

  • Low temperature grown carbon nanotube interconnects using inner shells by chemical mechanical polishing

    Daisuke Yokoyama;Takayuki Iwasaki;Tsuyoshi Yoshida;Hiroshi Kawarada

  • High-preformance diamond surface-channel field-effect transistors and their operation mechanism

    K Tsugawa;K Kitatani;H Noda;A Hokazono

Frequent Co-Authors

Yoshihiko Takano
Yoshihiko Takano National Institute for Materials Science
Tokuyuki Teraji
Tokuyuki Teraji National Institute for Materials Science
Isao Sakaguchi
Isao Sakaguchi National Institute for Materials Science
Tamio Oguchi
Tamio Oguchi Osaka University
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
John Robertson
John Robertson University of Cambridge
Sherif A. El-Safty
Sherif A. El-Safty National Institute for Materials Science
Chunlei Wang
Chunlei Wang Florida International University
Erhard Kohn
Erhard Kohn North Carolina State University
Zlatko Sitar
Zlatko Sitar North Carolina State University

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