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D-Index & Metrics

Materials Science

D-Index
42
Citations
8938
World Ranking
12494
National Ranking
783

Isao Sakaguchi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Isao Sakaguchi sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 366 publications — 73rd percentile

73% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Isao Sakaguchi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Isao Sakaguchi sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 42 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Isao Sakaguchi is a researcher affiliated with the National Institute for Materials Science in Japan. The primary focus of their work lies in the fields of engineering and materials science, with significant contributions in subfields such as electrical and electronic engineering, materials chemistry, bioengineering, biomedical engineering, and polymers and plastics.

Their research extensively covers topics related to gas sensing nanomaterials and sensors, analytical chemistry and sensors, ferroelectric and piezoelectric materials, ZnO doping and properties, transition metal oxide nanomaterials, advanced chemical sensor technologies, and acoustic wave resonator technologies.

Sakaguchi has authored several papers notable for their focus on sensor technologies and materials chemistry, including:

  • Highly sensitive isoprene gas sensor using Au-loaded pyramid-shaped ZnO particles (2020), Sensors and Actuators B Chemical
  • Ru-implanted WS2 nanosheet gas sensors to enhance sensing performance towards CO gas in self-heating mode (2022), Sensors and Actuators B Chemical
  • Self-heated CO gas sensor based on Au-decorated Sb-implanted WS2 nanosheets (2023), Sensors and Actuators B Chemical
  • Decoration of Pt/Pd bimetallic nanoparticles on Ru-implanted WS2 nanosheets for acetone sensing studies (2023), Applied Surface Science
  • Ethanol Gas Sensing by a Zn-Terminated ZnO(0001) Bulk Single-Crystalline Substrate (2020), ACS Omega

The frequent coauthors collaborating with Sakaguchi include:

  • Taku Suzuki
  • Noriko Saito
  • Jae-Hun Kim
  • Shunichi Hishita
  • Takeo Ohsawa

Their publications have appeared most often in venues such as:

  • Journal of the Ceramic Society of Japan
  • Sensors and Actuators B Chemical
  • SSRN Electronic Journal
  • Applied Surface Science
  • Japanese Journal of Applied Physics

Isao Sakaguchi's body of work reflects an emphasis on developing and understanding nanomaterial-based gas sensors and related analytical techniques. The integration of materials chemistry and electronic engineering principles is evident across their research themes and publication record.

Best Publications

  • LiNbO3-coated LiCoO2 as cathode material for all solid-state lithium secondary batteries

    Narumi Ohta;Kazunori Takada;Isao Sakaguchi;Lianqi Zhang

  • Low-Temperature Fabrication of Light-Emitting Zinc Oxide Micropatterns Using Self-Assembled Monolayers

    Noriko Saito;Hajime Haneda;Takashi Sekiguchi;Naoki Ohashi

  • Interfacial modification for high-power solid-state lithium batteries

    Kazunori Takada;Narumi Ohta;Lianqi Zhang;Katsutoshi Fukuda

  • Superconductivity in diamond thin films well above liquid helium temperature

    Yoshihiko Takano;Masanori Nagao;Isao Sakaguchi;Minoru Tachiki

  • Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

    Y. Takano;M. Nagao;K. Kobayashi;H. Umezawa

  • Sulfur: A donor dopant for n -type diamond semiconductors

    Isao Sakaguchi;Mikka N.-Gamo;Yuko Kikuchi;Eiji Yasu

  • Boron concentration dependence of Raman spectra on {100} and {111} facets of B-doped CVD diamond

    Koichi Ushizawa;Kenji Watanabe;Toshihiro Ando;Isao Sakaguchi

  • Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO

    Naoki Ohashi;Takamasa Ishigaki;Nobuhiro Okada;Takashi Sekiguchi

  • Surface modification of zinc oxide nanoparticles by aminopropyltriethoxysilane

    Fabien Grasset;N. Saito;D. Li;D. Park

  • Surface conditioning of chemical vapor deposited hexagonal boron nitride film for negative electron affinity

    Kian Ping Loh;Isao Sakaguchi;Mikka Nishitani Gamo;Shigeru Tagawa

  • Passivation of active recombination centers in ZnO by hydrogen doping

    Naoki Ohashi;Takamasa Ishigaki;Nobuhiro Okada;Hiroyuki Taguchi

  • Superconducting properties of homoepitaxial CVD diamond

    Y. Takano;T. Takenouchi;S. Ishii;S. Ueda

  • Piezoelectric Properties of Bismuth Sodium Titanate Ceramics

    Hajime Nagata;Takashi Shinya;Yuji Hiruma;Tadashi Takenaka

  • Yttrium doping effect on oxygen grain boundary diffusion in α-Al2O3

    Tsubasa Nakagawa;Isao Sakaguchi;Naoya Shibata;Katsuyuki Matsunaga

  • An amorphous Si film anode for all-solid-state lithium batteries

    Reona Miyazaki;Narumi Ohta;Tsuyoshi Ohnishi;Isao Sakaguchi

  • Yellowish-white luminescence in codoped zinc oxide

    Naoki Ohashi;Naoki Ebisawa;Takashi Sekiguchi;Isao Sakaguchi

  • Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties

    Mikka Nishitani-Gamo;Eiji Yasu;Changyong Xiao;Yuko Kikuchi

  • Superconductivity in polycrystalline diamond thin films

    Yoshihiko Takano;Masanori Nagao;Tomohiro Takenouchi;Hitoshi Umezawa

  • Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition

    Mikka Nishitani-Gamo;Changyong Xiao;Yafei Zhang;Eiji Yasu

  • Control of surface morphology of ZnO ? by hydrochloric acid etching

    H Maki;T Ikoma;I Sakaguchi;N Ohashi

  • Band-edge emission of undoped and doped ZnO single crystals at room temperature

    Naoki Ohashi;Takashi Sekiguchi;Kouichiroh Aoyama;Takeshi Ohgaki

Frequent Co-Authors

Hajime Haneda
Hajime Haneda National Institute for Materials Science
Naoki Ohashi
Naoki Ohashi National Institute for Materials Science
Tadashi Takenaka
Tadashi Takenaka Tokyo University of Science
Takashi Sekiguchi
Takashi Sekiguchi University of Tsukuba
Hiroshi Kawarada
Hiroshi Kawarada Waseda University
Kian Ping Loh
Kian Ping Loh National University of Singapore
Yoshihiko Takano
Yoshihiko Takano National Institute for Materials Science
Yuichi Ikuhara
Yuichi Ikuhara University of Tokyo
Takahisa Yamamoto
Takahisa Yamamoto Nagoya University
Takamasa Ishigaki
Takamasa Ishigaki Hosei University

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