World's Best Scientists 2026 revealed!
Takashi Sekiguchi

Takashi Sekiguchi

D-Index & Metrics

Materials Science

D-Index
72
Citations
20233
World Ranking
4010
National Ranking
177

Takashi Sekiguchi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Takashi Sekiguchi sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 604 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Takashi Sekiguchi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Takashi Sekiguchi sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 72 D-Index — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Takashi Sekiguchi is affiliated with the University of Tsukuba in Japan and has contributed extensively to fields spanning Engineering and Materials Science. Their research work encompasses several subfields, prominently Electrical and Electronic Engineering, Materials Chemistry, Mechanics of Materials, Atomic and Molecular Physics and Optics, and Condensed Matter Physics.

The main topics addressed in Sekiguchi's publications include Semiconductor materials and devices, Metal and Thin Film Mechanics, GaN-based semiconductor devices and materials, Electron and X-Ray Spectroscopy Techniques, Grouting, Rheology, and Soil Mechanics, Perovskite Materials and Applications, and Surface and Thin Film Phenomena.

Frequent publication venues reflect these topics and include Microscopy, Journal of Applied Physics, Journal of Electronic Materials, SSRN Electronic Journal, and Journal of Surface Analysis.

Several recent papers showcase the scope of Sekiguchi's research:

  • Improving the Open-Circuit Voltage of Sn-Based Perovskite Solar Cells by Band Alignment at the Electron Transport Layer/Perovskite Layer Interface (2020, ACS Applied Materials & Interfaces)
  • Stable single atomic silver wires assembling into a circuitry-connectable nanoarray (2021, Nature Communications)
  • Influence of implanted Mg concentration on defects and Mg distribution in GaN (2020, Journal of Applied Physics)
  • Mg diffusion and activation along threading dislocations in GaN (2020, Applied Physics Letters)
  • Composition dependent properties of p- and n-type polycrystalline group-IV alloy thin films (2021, Journal of Alloys and Compounds)

Sekiguchi has collaborated frequently with fellow researchers such as Jun Chen, Tadakatsu Ohkubo, Wei Yi, Ryo Tanaka, and Shinya Takashima. The number of coauthored works ranges predominantly from six to twelve for these frequent collaborators.

The combined focus on semiconductor materials, thin film mechanics, and spectroscopy techniques indicates an integrative approach bridging applied physics and materials chemistry. The prominence of GaN-based materials and perovskite applications aligns their profile with contemporary topics in electronic materials research.

Best Publications

  • Characterization and properties of green-emitting β-SiAlON:Eu2+ powder phosphors for white light-emitting diodes

    Naoto Hirosaki;Rong-Jun Xie;Koji Kimoto;Takashi Sekiguchi

  • High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties

    Zhengwu Jin;Tomoteru Fukumura;M. Kawasaki;K. Ando

  • Low-Temperature Fabrication of Light-Emitting Zinc Oxide Micropatterns Using Self-Assembled Monolayers

    Noriko Saito;Hajime Haneda;Takashi Sekiguchi;Naoki Ohashi

  • Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors

    Xiaosheng Fang;Yoshio Bando;Meiyong Liao;Ujjal K. Gautam

  • Hydrothermal growth of ZnO single crystals and their optical characterization

    T Sekiguchi;S Miyashita;K Obara;T Shishido

  • Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films

    Kazushi Hayashi;Sadanori Yamanaka;Hideyuki Watanabe;Takashi Sekiguchi

  • Perfectly dissolved boron nitride nanotubes due to polymer wrapping.

    Chunyi Zhi;Yoshio Bando;Chengchun Tang;Rongguo Xie

  • Electron-beam-induced current study of grain boundaries in multicrystalline silicon

    J. Chen;T. Sekiguchi;D. Yang;F. Yin

  • Novel boron nitride hollow nanoribbons

    Zhi-Gang Chen;Jin Zou;Gang Liu;Feng Li

  • Compositional Engineering for Thermally Stable, Highly Efficient Perovskite Solar Cells Exceeding 20% Power Conversion Efficiency with 85 °C/85% 1000 h Stability

    Unknown

  • Two-dimensional micrometer-sized single-crystalline ZnO thin nanosheets

    J. Q. Hu;Y. Bando;J. H. Zhan;Y. B. Li

  • Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO

    Naoki Ohashi;Takamasa Ishigaki;Nobuhiro Okada;Takashi Sekiguchi

  • Blue-emitting AlN:Eu2+ nitride phosphor for field emission displays

    N. Hirosaki;R.-J. Xie;K. Inoue;T. Sekiguchi

  • Structure and cathodoluminescence of individual ZnS/ZnO biaxial nanobelt heterostructures.

    Jian Yan;Xiaosheng Fang;Lide Zhang;Yoshio Bando

  • Effect of Hydrogenation on ZnO Luminescence

    Takashi Sekiguchi;Naoki Ohashi;Yoshihiro Terada

  • Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements

    Z. Q. Chen;S. Yamamoto;M. Maekawa;A. Kawasuso

  • Zn vacancy induced green luminescence on non-polar surfaces in ZnO nanostructures

    F. Fabbri;M. Villani;A. Catellani;A. Calzolari

  • Morphology and characterization of GaN single crystals grown in a Na flux

    Hisanori Yamane;Masahiko Shimada;Takashi Sekiguchi;Francis J DiSalvo

  • Strong Green Emission from α-SiAlON Activated by Divalent Ytterbium under Blue Light Irradiation

    R.-J. Xie;N. Hirosaki;M. Mitomo;K. Uheda

  • Production and recovery of defects in phosphorus-implanted ZnO

    Z. Q. Chen;A. Kawasuso;Y. Xu;H. Naramoto

  • ZnO thin films prepared by remote plasma-enhanced CVD method

    K Haga;M Kamidaira;Y Kashiwaba;T Sekiguchi

Frequent Co-Authors

Yoshio Bando
Yoshio Bando University of Wollongong
Dmitri Golberg
Dmitri Golberg Queensland University of Technology
Naoki Ohashi
Naoki Ohashi National Institute for Materials Science
Hajime Haneda
Hajime Haneda National Institute for Materials Science
Baodan Liu
Baodan Liu Chinese Academy of Sciences
Hideyo Okushi
Hideyo Okushi National Institute of Advanced Industrial Science and Technology
Isao Sakaguchi
Isao Sakaguchi National Institute for Materials Science
Chengchun Tang
Chengchun Tang Hebei University of Technology
Naoto Hirosaki
Naoto Hirosaki National Institute for Materials Science
Rong-Jun Xie
Rong-Jun Xie Xiamen University

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