World's Best Scientists 2026 revealed!
Satoshi Yamasaki

Satoshi Yamasaki

D-Index & Metrics

Materials Science

D-Index
58
Citations
13201
World Ranking
7635
National Ranking
418

Satoshi Yamasaki publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Satoshi Yamasaki sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 572 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Satoshi Yamasaki D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Satoshi Yamasaki sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 58 D-Index — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Satoshi Yamasaki is affiliated with Kanazawa University in Japan and has contributed extensively to research in engineering and materials science. Their work primarily focuses on materials chemistry and electrical and electronic engineering, with significant exploration of mechanics of materials and atomic and molecular physics as subfields.

Their research covers key topics including:

  • Diamond and carbon-based materials research
  • Semiconductor materials and devices
  • Metal and thin film mechanics
  • Advancements in semiconductor devices and circuit design
  • Force microscopy techniques and applications
  • Ion-surface interactions and analysis
  • Electronic and structural properties of oxides

Satoshi Yamasaki has published in a variety of scientific venues, with frequent contributions to the following journals:

  • Diamond and Related Materials
  • Carbon
  • Applied Physics Letters
  • Japanese Journal of Applied Physics
  • Scientific Reports

Their recent papers include:

  • "Influence of chemical structure of hard segments on physical properties of polyurethane elastomers: a review" (2020), Journal of Polymer Research
  • "Shallow NV centers augmented by exploiting n-type diamond" (2021), Carbon
  • "Room Temperature Electrically Detected Nuclear Spin Coherence of NV Centres in Diamond" (2020), Scientific Reports
  • "Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method" (2020), Carbon
  • "Inversion-type p-channel diamond MOSFET issues" (2021), Journal of materials research/Pratt's guide to venture capital sources

Their co-authorship network includes frequent collaboration with researchers such as Norio Tokuda, Toshiharu Makino, Tsubasa Matsumoto, Masahiko Ogura, and Hiromitsu Kato, with coauthoring occurring in multiple publications.

Best Publications

  • Multipartite entanglement among single spins in diamond.

    P. Neumann;N. Mizuochi;F. Rempp;P. Hemmer

  • Electrically driven single-photon source at room temperature in diamond

    N. Mizuochi;T. Makino;H. Kato;D. Takeuchi

  • Germanium-Vacancy Single Color Centers in Diamond.

    Takayuki Iwasaki;Fumitaka Ishibashi;Yoshiyuki Miyamoto;Yuki Doi

  • Ultra-long coherence times amongst room-temperature solid-state spins.

    E. D. Herbschleb;H. Kato;Y. Maruyama;T. Danjo

  • Coherence of single spins coupled to a nuclear spin bath of varying density

    N. Mizuochi;N. Mizuochi;P. Neumann;F. Rempp;J. Beck

  • n-type doping of (001)-oriented single-crystalline diamond by phosphorus

    Hiromitsu Kato;Satoshi Yamasaki;Hideyo Okushi

  • Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films

    Akihisa Matsuda;Satoshi Yamasaki;Katsumi Nakagawa;Hideyo Okushi

  • Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces

    D. Takeuchi;H. Kato;G. S. Ri;T. Yamada

  • Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

    Tsubasa Matsumoto;Hiromitsu Kato;Kazuhiro Oyama;Toshiharu Makino

  • Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S = 3 2 and C 3 v symmetry in n -type 4 H − SiC

    N. Mizuochi;S. Yamasaki;H. Takizawa;N. Morishita

  • n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

    Hiromitsu Kato;Toshiharu Makino;Satoshi Yamasaki;Satoshi Yamasaki;Hideyo Okushi

  • EPR identification of the negatively charged vacancy in diamond.

    J. Isoya;H. Kanda;Y. Uchida;S. C. Lawson

  • Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon

    Eisuke Abe;Kohei M. Itoh;Junichi Isoya;Satoshi Yamasaki

  • Pure negatively charged state of the NV center in n -type diamond

    Yuki Doi;Takahiro Fukui;Hiromitsu Kato;Toshiharu Makino

  • Perfect selective alignment of nitrogen-vacancy centers in diamond

    Takahiro Fukui;Yuki Doi;Takehide Miyazaki;Yoshiyuki Miyamoto

  • Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

    Hiromitsu Kato;Marco Wolfer;Christoph Schreyvogel;Michael Kunzer

  • Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode

    Toshiharu Makino;Kiyoshi Yoshino;Norihiro Sakai;Kouji Uchida

  • Influence of chemical structure of hard segments on physical properties of polyurethane elastomers: a review

    Ken Kojio;Shuhei Nozaki;Atsushi Takahara;Satoshi Yamasaki

  • Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins

    Takayuki Iwasaki;Wataru Naruki;Kosuke Tahara;Toshiharu Makino

  • 600 V Diamond Junction Field-Effect Transistors Operated at 200 $^{\circ}{ m C}$

    Takayuki Iwasaki;Junya Yaita;Hiromitsu Kato;Toshiharu Makino

  • Superior Properties of Polyurethane Elastomers Synthesized with Aliphatic Diisocyanate Bearing a Symmetric Structure

    Shuhei Nozaki;Shiori Masuda;Kazutaka Kamitani;Ken Kojio

  • One-dimensional hopping transport in disordered organic solids. I. Analytic calculations

    H. Cordes;S. D. Baranovskii;K. Kohary;P. Thomas

  • Perfect selective alignment of nitrogen-vacancy center in diamond

    T. Fukui;Y. Doi;T. Miyazaki;Y. Miyamoto

  • Deterministic Electrical Charge-State Initialization of Single Nitrogen-Vacancy Center in Diamond

    Y. Doi;T. Makino;H. Kato;D. Takeuchi

  • Boron Doping of Hydrogenated Silicon Thin Films

    Akihisa Matsuda;Mitsuo Matsumura;Satoshi Yamasaki;Hideo Yamamoto

  • Plasma spectroscopy control and analysis of a-Si:H deposition

    A. Matsuda;K. Nakagawa;K. Tanaka;M. Matsumura

Frequent Co-Authors

Hideyo Okushi
Hideyo Okushi National Institute of Advanced Industrial Science and Technology
Seiji Samukawa
Seiji Samukawa Tohoku University
Hiromichi Ohashi
Hiromichi Ohashi Tokyo Institute of Technology
Christoph E. Nebel
Christoph E. Nebel Diamond and Carbon Applications
Fedor Jelezko
Fedor Jelezko University of Ulm
Kentaro Shimizu
Kentaro Shimizu University of Zurich
Igor Aharonovich
Igor Aharonovich University of Technology Sydney
Shangjr Gwo
Shangjr Gwo National Tsing Hua University
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Jörg Wrachtrup
Jörg Wrachtrup University of Stuttgart

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