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Satoshi Yamasaki

Satoshi Yamasaki

D-Index & Metrics

Materials Science

D-Index
58
Citations
13201
World Ranking
7637
National Ranking
418

Overview

Satoshi Yamasaki is affiliated with Kanazawa University in Japan and has contributed extensively to research in engineering and materials science. Their work primarily focuses on materials chemistry and electrical and electronic engineering, with significant exploration of mechanics of materials and atomic and molecular physics as subfields.

Their research covers key topics including:

  • Diamond and carbon-based materials research
  • Semiconductor materials and devices
  • Metal and thin film mechanics
  • Advancements in semiconductor devices and circuit design
  • Force microscopy techniques and applications
  • Ion-surface interactions and analysis
  • Electronic and structural properties of oxides

Satoshi Yamasaki has published in a variety of scientific venues, with frequent contributions to the following journals:

  • Diamond and Related Materials
  • Carbon
  • Applied Physics Letters
  • Japanese Journal of Applied Physics
  • Scientific Reports

Their recent papers include:

  • "Influence of chemical structure of hard segments on physical properties of polyurethane elastomers: a review" (2020), Journal of Polymer Research
  • "Shallow NV centers augmented by exploiting n-type diamond" (2021), Carbon
  • "Room Temperature Electrically Detected Nuclear Spin Coherence of NV Centres in Diamond" (2020), Scientific Reports
  • "Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method" (2020), Carbon
  • "Inversion-type p-channel diamond MOSFET issues" (2021), Journal of materials research/Pratt's guide to venture capital sources

Their co-authorship network includes frequent collaboration with researchers such as Norio Tokuda, Toshiharu Makino, Tsubasa Matsumoto, Masahiko Ogura, and Hiromitsu Kato, with coauthoring occurring in multiple publications.

Best Publications

  • Multipartite entanglement among single spins in diamond.

    P. Neumann;N. Mizuochi;F. Rempp;P. Hemmer

  • Electrically driven single-photon source at room temperature in diamond

    N. Mizuochi;T. Makino;H. Kato;D. Takeuchi

  • Germanium-Vacancy Single Color Centers in Diamond.

    Takayuki Iwasaki;Fumitaka Ishibashi;Yoshiyuki Miyamoto;Yuki Doi

  • Ultra-long coherence times amongst room-temperature solid-state spins.

    E. D. Herbschleb;H. Kato;Y. Maruyama;T. Danjo

  • Coherence of single spins coupled to a nuclear spin bath of varying density

    N. Mizuochi;N. Mizuochi;P. Neumann;F. Rempp;J. Beck

  • n-type doping of (001)-oriented single-crystalline diamond by phosphorus

    Hiromitsu Kato;Satoshi Yamasaki;Hideyo Okushi

  • Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films

    Akihisa Matsuda;Satoshi Yamasaki;Katsumi Nakagawa;Hideyo Okushi

  • Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces

    D. Takeuchi;H. Kato;G. S. Ri;T. Yamada

  • Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

    Tsubasa Matsumoto;Hiromitsu Kato;Kazuhiro Oyama;Toshiharu Makino

  • Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S = 3 2 and C 3 v symmetry in n -type 4 H − SiC

    N. Mizuochi;S. Yamasaki;H. Takizawa;N. Morishita

  • n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

    Hiromitsu Kato;Toshiharu Makino;Satoshi Yamasaki;Satoshi Yamasaki;Hideyo Okushi

  • EPR identification of the negatively charged vacancy in diamond.

    J. Isoya;H. Kanda;Y. Uchida;S. C. Lawson

  • Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon

    Eisuke Abe;Kohei M. Itoh;Junichi Isoya;Satoshi Yamasaki

  • Pure negatively charged state of the NV center in n -type diamond

    Yuki Doi;Takahiro Fukui;Hiromitsu Kato;Toshiharu Makino

  • Perfect selective alignment of nitrogen-vacancy centers in diamond

    Takahiro Fukui;Yuki Doi;Takehide Miyazaki;Yoshiyuki Miyamoto

  • Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

    Hiromitsu Kato;Marco Wolfer;Christoph Schreyvogel;Michael Kunzer

  • Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode

    Toshiharu Makino;Kiyoshi Yoshino;Norihiro Sakai;Kouji Uchida

  • Influence of chemical structure of hard segments on physical properties of polyurethane elastomers: a review

    Ken Kojio;Shuhei Nozaki;Atsushi Takahara;Satoshi Yamasaki

  • Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins

    Takayuki Iwasaki;Wataru Naruki;Kosuke Tahara;Toshiharu Makino

  • 600 V Diamond Junction Field-Effect Transistors Operated at 200 $^{\circ}{ m C}$

    Takayuki Iwasaki;Junya Yaita;Hiromitsu Kato;Toshiharu Makino

  • Superior Properties of Polyurethane Elastomers Synthesized with Aliphatic Diisocyanate Bearing a Symmetric Structure

    Shuhei Nozaki;Shiori Masuda;Kazutaka Kamitani;Ken Kojio

  • One-dimensional hopping transport in disordered organic solids. I. Analytic calculations

    H. Cordes;S. D. Baranovskii;K. Kohary;P. Thomas

  • Perfect selective alignment of nitrogen-vacancy center in diamond

    T. Fukui;Y. Doi;T. Miyazaki;Y. Miyamoto

  • Deterministic Electrical Charge-State Initialization of Single Nitrogen-Vacancy Center in Diamond

    Y. Doi;T. Makino;H. Kato;D. Takeuchi

  • Boron Doping of Hydrogenated Silicon Thin Films

    Akihisa Matsuda;Mitsuo Matsumura;Satoshi Yamasaki;Hideo Yamamoto

  • Plasma spectroscopy control and analysis of a-Si:H deposition

    A. Matsuda;K. Nakagawa;K. Tanaka;M. Matsumura

Frequent Co-Authors

Hideyo Okushi
Hideyo Okushi National Institute of Advanced Industrial Science and Technology
Seiji Samukawa
Seiji Samukawa Tohoku University
Hiromichi Ohashi
Hiromichi Ohashi Tokyo Institute of Technology
Christoph E. Nebel
Christoph E. Nebel Diamond and Carbon Applications
Fedor Jelezko
Fedor Jelezko University of Ulm
Kentaro Shimizu
Kentaro Shimizu University of Zurich
Igor Aharonovich
Igor Aharonovich University of Technology Sydney
Shangjr Gwo
Shangjr Gwo National Tsing Hua University
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Jörg Wrachtrup
Jörg Wrachtrup University of Stuttgart

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