2026 Adam Gali: Physics Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Physics	76	3317	3153	3	3	410	21865

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Physics

3317

3153

410

21865

Research.com Recognitions

2026 - Research.com Physics in Hungary Leader Award
2025 - Research.com Physics in Hungary Leader Award

Overview

Adam Gali is affiliated with the Hungarian Academy of Sciences in Hungary. Their research primarily focuses on materials science and engineering, with a notable emphasis on materials chemistry and electrical and electronic engineering. The scientist's work includes significant contributions to atomic and molecular physics, optics, geophysics, and biomedical engineering.

Their main research topics encompass:

Diamond and Carbon-based Materials Research
Semiconductor materials and devices
Graphene research and applications
Electronic and Structural Properties of Oxides
Silicon Carbide Semiconductor Technologies
Silicon Nanostructures and Photoluminescence
High-pressure geophysics and materials

Adam Gali's publication record includes papers in various scientific venues. Frequent publication outlets include:

arXiv (Cornell University)
Physical Review B
Nature Communications
Physical Review Letters
npj Computational Materials

Selected recent papers are:

Quantum guidelines for solid-state spin defects, 2021, Nature Reviews Materials
Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride, 2020, npj Computational Materials
Material platforms for defect qubits and single-photon emitters, 2020, Applied Physics Reviews
Towards ab initio identification of paramagnetic substitutional carbon defects in hexagonal boron nitride acting as quantum bits, 2021, Physical Review B
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide, 2020, Nature Communications

Adam Gali frequently collaborates with several co-authors, including:

Gergő Thiering
Péter Udvarhelyi
Anton Pershin
Viktor Ivády
Song Li

Best Publications

A room temperature single photon source in silicon carbide

S. Castelletto;B. C. Johnson;V. Ivady;N. Stavrias

735
Citations
Coherent control of single spins in silicon carbide at room temperature

Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son

718
Citations
Properties of nitrogen-vacancy centers in diamond: the group theoretic approach

Jeronimo R. Maze;Jeronimo R. Maze;Adam Gali;Adam Gali;Emre Togan;Yiwen Chu

608
Citations
Coherent control of single spins in silicon carbide at room temperature

Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son

510
Citations
Electronic structure of the silicon vacancy color center in diamond

Christian Hepp;Tina Müller;Victor Waselowski;Jonas N. Becker

466
Citations
Quantum guidelines for solid-state spin defects

Gary Wolfowicz;Gary Wolfowicz;F. Joseph Heremans;F. Joseph Heremans;Christopher P. Anderson;Shun Kanai

466
Citations
Accurate defect levels obtained from the HSE06 range-separated hybrid functional

Peter Deák;Bálint Aradi;Thomas Frauenheim;Erik Janzén

438
Citations
Electrically driven single-photon source at room temperature in diamond

N. Mizuochi;T. Makino;H. Kato;D. Takeuchi

421
Citations
Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors

Adam Gali;Adam Gali;Maria Fyta;Efthimios Kaxiras

418
Citations
Properties of nitrogen-vacancy centers in diamond: group theoretic approach

Jeronimo Maze;Adam Gali;Emre Togan;Yiwen Chu

328
Citations
Theory of spin-conserving excitation of the N-V(-) center in diamond.

Adam Gali;Adam Gali;Erik Janzén;Péter Deák;Georg Kresse

327
Citations
Molecular-sized fluorescent nanodiamonds

Igor I. Vlasov;Andrey A. Shiryaev;Torsten Rendler;Steffen Steinert

310
Citations
Optically Controlled Switching of the Charge State of a Single Nitrogen-Vacancy Center in Diamond at Cryogenic Temperatures

P. Siyushev;H. Pinto;M. Vörös;A. Gali;A. Gali

287
Citations
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Roland Nagy;Matthias Niethammer;Matthias Widmann;Yu-Chen Chen

287
Citations
Divacancy in 4H-SiC.

N. T. Son;P. Carlsson;J. ul Hassan;E. Janzén

274
Citations
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Martin Heiss;Martin Heiss;Sonia Conesa-Boj;Sonia Conesa-Boj;Jun Ren;Hsiang-Han Tseng

255
Citations
Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects

Peter Deák;Bálint Aradi;Moloud Kaviani;Thomas Frauenheim

246
Citations
Single-photon emitting diode in silicon carbide.

A. Lohrmann;N. Iwamoto;Z. Bodrog;S. Castelletto

242
Citations
Dark States of Single Nitrogen-Vacancy Centers in Diamond Unraveled by Single Shot NMR

G. Waldherr;J. Beck;M. Steiner;P. Neumann

241
Citations
Ab initio theory of the nitrogen-vacancy center in diamond

Ádám Gali;Ádám Gali

211
Citations