World's Best Scientists 2026 revealed!
Efthimios Kaxiras

Efthimios Kaxiras

D-Index & Metrics

Materials Science

D-Index
111
Citations
60115
World Ranking
671
National Ranking
233

Physics

D-Index
116
Citations
64038
World Ranking
938
National Ranking
498

Research.com Recognitions

  • 2003 - Fellow of American Physical Society (APS) Citation For contributions to understanding the properties of materials, through simulations and the development of new firstprinciples, empirical and multiscale computational methods

Overview

Efthimios Kaxiras is affiliated with Harvard University in the United States and has contributed extensively to research in the fields of Materials Science and Physics and Astronomy. Their work spans over 400 publications, with a significant focus on specialized subfields such as Materials Chemistry, Atomic and Molecular Physics and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's research topics prominently cover Graphene research and applications, 2D Materials and Applications, Physics of Superconductivity and Magnetism, Topological Materials and Phenomena, Quantum and electron transport phenomena, Superconductivity in MgB2 and Alloys, and Electronic and Structural Properties of Oxides.

Frequent co-authors collaborating with Efthimios Kaxiras include:

  • J. G. Checkelsky
  • David C. Bell
  • Aravind Devarakonda
  • M. Kriener
  • C. Ozsoy-Keskinbora

Most of their research outputs have appeared in these publication venues:

  • Harvard Dataverse
  • arXiv (Cornell University)
  • Physical Review B
  • Nano Letters
  • Nature Communications

Some recent papers authored or co-authored by Efthimios Kaxiras include:

  • Twofold van Hove singularity and origin of charge order in topological kagome superconductor CsV3Sb5 (2022, Nature Physics)
  • Electronic-structure methods for twisted moiré layers (2020, Nature Reviews Materials)
  • Enhancement of van der Waals Interlayer Coupling through Polar Janus MoSSe (2020, Journal of the American Chemical Society)
  • Twisted Trilayer Graphene: A Precisely Tunable Platform for Correlated Electrons (2020, Physical Review Letters)
  • Orderly disorder in magic-angle twisted trilayer graphene (2022, Science)

Efthimios Kaxiras has also contributed to book publications, notably "Modern Mathematical Methods for Scientists and Engineers" published by WORLD SCIENTIFIC (EUROPE) eBooks in 2021.

In recognition of scientific contributions, Efthimios Kaxiras was awarded the Fellow of the American Physical Society (APS) in 2003 for work involving the understanding of material properties through simulations and the development of new computational methods across first-principles, empirical, and multiscale approaches.

Best Publications

  • Unconventional superconductivity in magic-angle graphene superlattices

    Yuan Cao;Valla Fatemi;Shiang Fang;Kenji Watanabe

  • Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices

    Yuan Cao;Valla Fatemi;Ahmet Demir;Shiang Fang

  • Surfactants in epitaxial growth.

    M. Copel;M. C. Reuter;Efthimios Kaxiras;R. M. Tromp

  • Hydrogen bonding and stacking interactions of nucleic acid base pairs: A density-functional-theory based treatment

    Marcus Elstner;Pavel Hobza;Thomas Frauenheim;Sándor Suhai

  • Optimized pseudopotentials.

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  • Concurrent coupling of length scales: Methodology and application

    Jeremy Q. Broughton;Farid F. Abraham;Noam Bernstein;Efthimios Kaxiras

  • A QM/MM Implementation of the Self-Consistent Charge Density Functional Tight Binding (SCC-DFTB) Method

    Qiang Cui;Marcus Elstner;Efthimios Kaxiras;and Thomas Frauenheim

  • Observation of the nonlinear Hall effect under time-reversal-symmetric conditions

    Qiong Ma;Su Yang Xu;Huitao Shen;David MacNeill

  • Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene

    Hyobin Yoo;Rebecca Engelke;Stephen Carr;Shiang Fang

  • Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

    Lili Yu;Yi Hsien Lee;Xi Ling;Elton J G Santos

  • Atomic and electronic structure of solids

    Efthimios Kaxiras

  • Dirac fermions and flat bands in the ideal kagome metal FeSn

    Mingu Kang;Linda Ye;Shiang Fang;Jhih Shih You

  • Properties of nitrogen-vacancy centers in diamond: the group theoretic approach

    Jeronimo R. Maze;Jeronimo R. Maze;Adam Gali;Adam Gali;Emre Togan;Yiwen Chu

  • Interatomic potential for silicon defects and disordered phases

    João F. Justo;Martin Z. Bazant;Efthimios Kaxiras;V. V. Bulatov

  • Environment-dependent interatomic potential for bulk silicon

    Martin Z. Bazant;Efthimios Kaxiras;J. F. Justo

  • Graphene NanoFlakes with Large Spin

    Wei L. Wang;Sheng Meng;Efthimios Kaxiras

  • Twistronics: Manipulating the Electronic Properties of Two-dimensional Layered Structures through their Twist Angle

    Stephen Carr;Daniel Massatt;Shiang Fang;Paul Cazeaux

  • MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

    Amirhasan Nourbakhsh;Ahmad Zubair;Redwan N. Sajjad;K G Amir Tavakkoli

  • A structural approach to relaxation in glassy liquids

    Samuel S. Schoenholz;Ekin D. Cubuk;Daniel M. Sussman;Efthimios Kaxiras

  • Multiphysics simulations: Challenges and opportunities

    David E Keyes;Lois C Mcinnes;Carol Woodward;William Gropp

  • Adsorption and Diffusion of Lithium on Layered Silicon for Li-Ion Storage

    Georgios A. Tritsaris;Efthimios Kaxiras;Sheng Meng;Enge Wang

  • Spanning the continuum to quantum length scales in a dynamic simulation of brittle fracture

    F. F. Abraham;J. Q. Broughton;N. Bernstein;E. Kaxiras

  • Atomic and electronic reconstruction at van der Waals interface in twisted bilayer graphene

    Hyobin Yoo;Rebecca Engelke;Stephen Carr;Shiang Fang

Frequent Co-Authors

Cynthia M. Friend
Cynthia M. Friend Harvard University
Sheng Meng
Sheng Meng Chinese Academy of Sciences
Sauro Succi
Sauro Succi Italian Institute of Technology
Ekin D. Cubuk
Ekin D. Cubuk Google (United States)
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Adam Gali
Adam Gali Budapest University of Technology and Economics
Mitchell Luskin
Mitchell Luskin University of Minnesota

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