World's Best Scientists 2026 revealed!
Efthimios Kaxiras

Efthimios Kaxiras

D-Index & Metrics

Materials Science

D-Index
111
Citations
60115
World Ranking
671
National Ranking
232

Physics

D-Index
116
Citations
64038
World Ranking
938
National Ranking
498

Efthimios Kaxiras publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Efthimios Kaxiras sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 640 publications — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Efthimios Kaxiras D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Efthimios Kaxiras sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 111 D-Index — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2003 - Fellow of American Physical Society (APS) Citation For contributions to understanding the properties of materials, through simulations and the development of new firstprinciples, empirical and multiscale computational methods

Overview

Efthimios Kaxiras is affiliated with Harvard University in the United States and has contributed extensively to research in the fields of Materials Science and Physics and Astronomy. Their work spans over 400 publications, with a significant focus on specialized subfields such as Materials Chemistry, Atomic and Molecular Physics and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's research topics prominently cover Graphene research and applications, 2D Materials and Applications, Physics of Superconductivity and Magnetism, Topological Materials and Phenomena, Quantum and electron transport phenomena, Superconductivity in MgB2 and Alloys, and Electronic and Structural Properties of Oxides.

Frequent co-authors collaborating with Efthimios Kaxiras include:

  • J. G. Checkelsky
  • David C. Bell
  • Aravind Devarakonda
  • M. Kriener
  • C. Ozsoy-Keskinbora

Most of their research outputs have appeared in these publication venues:

  • Harvard Dataverse
  • arXiv (Cornell University)
  • Physical Review B
  • Nano Letters
  • Nature Communications

Some recent papers authored or co-authored by Efthimios Kaxiras include:

  • Twofold van Hove singularity and origin of charge order in topological kagome superconductor CsV3Sb5 (2022, Nature Physics)
  • Electronic-structure methods for twisted moiré layers (2020, Nature Reviews Materials)
  • Enhancement of van der Waals Interlayer Coupling through Polar Janus MoSSe (2020, Journal of the American Chemical Society)
  • Twisted Trilayer Graphene: A Precisely Tunable Platform for Correlated Electrons (2020, Physical Review Letters)
  • Orderly disorder in magic-angle twisted trilayer graphene (2022, Science)

Efthimios Kaxiras has also contributed to book publications, notably "Modern Mathematical Methods for Scientists and Engineers" published by WORLD SCIENTIFIC (EUROPE) eBooks in 2021.

In recognition of scientific contributions, Efthimios Kaxiras was awarded the Fellow of the American Physical Society (APS) in 2003 for work involving the understanding of material properties through simulations and the development of new computational methods across first-principles, empirical, and multiscale approaches.

Best Publications

  • Unconventional superconductivity in magic-angle graphene superlattices

    Yuan Cao;Valla Fatemi;Shiang Fang;Kenji Watanabe

  • Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices

    Yuan Cao;Valla Fatemi;Ahmet Demir;Shiang Fang

  • Surfactants in epitaxial growth.

    M. Copel;M. C. Reuter;Efthimios Kaxiras;R. M. Tromp

  • Hydrogen bonding and stacking interactions of nucleic acid base pairs: A density-functional-theory based treatment

    Marcus Elstner;Pavel Hobza;Thomas Frauenheim;Sándor Suhai

  • Optimized pseudopotentials.

    Unknown

  • Concurrent coupling of length scales: Methodology and application

    Jeremy Q. Broughton;Farid F. Abraham;Noam Bernstein;Efthimios Kaxiras

  • A QM/MM Implementation of the Self-Consistent Charge Density Functional Tight Binding (SCC-DFTB) Method

    Qiang Cui;Marcus Elstner;Efthimios Kaxiras;and Thomas Frauenheim

  • Observation of the nonlinear Hall effect under time-reversal-symmetric conditions

    Qiong Ma;Su Yang Xu;Huitao Shen;David MacNeill

  • Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene

    Hyobin Yoo;Rebecca Engelke;Stephen Carr;Shiang Fang

  • Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

    Lili Yu;Yi Hsien Lee;Xi Ling;Elton J G Santos

  • Atomic and electronic structure of solids

    Efthimios Kaxiras

  • Dirac fermions and flat bands in the ideal kagome metal FeSn

    Mingu Kang;Linda Ye;Shiang Fang;Jhih Shih You

  • Properties of nitrogen-vacancy centers in diamond: the group theoretic approach

    Jeronimo R. Maze;Jeronimo R. Maze;Adam Gali;Adam Gali;Emre Togan;Yiwen Chu

  • Interatomic potential for silicon defects and disordered phases

    João F. Justo;Martin Z. Bazant;Efthimios Kaxiras;V. V. Bulatov

  • Environment-dependent interatomic potential for bulk silicon

    Martin Z. Bazant;Efthimios Kaxiras;J. F. Justo

  • Graphene NanoFlakes with Large Spin

    Wei L. Wang;Sheng Meng;Efthimios Kaxiras

  • Twistronics: Manipulating the Electronic Properties of Two-dimensional Layered Structures through their Twist Angle

    Stephen Carr;Daniel Massatt;Shiang Fang;Paul Cazeaux

  • MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

    Amirhasan Nourbakhsh;Ahmad Zubair;Redwan N. Sajjad;K G Amir Tavakkoli

  • A structural approach to relaxation in glassy liquids

    Samuel S. Schoenholz;Ekin D. Cubuk;Daniel M. Sussman;Efthimios Kaxiras

  • Multiphysics simulations: Challenges and opportunities

    David E Keyes;Lois C Mcinnes;Carol Woodward;William Gropp

  • Adsorption and Diffusion of Lithium on Layered Silicon for Li-Ion Storage

    Georgios A. Tritsaris;Efthimios Kaxiras;Sheng Meng;Enge Wang

  • Spanning the continuum to quantum length scales in a dynamic simulation of brittle fracture

    F. F. Abraham;J. Q. Broughton;N. Bernstein;E. Kaxiras

  • Atomic and electronic reconstruction at van der Waals interface in twisted bilayer graphene

    Hyobin Yoo;Rebecca Engelke;Stephen Carr;Shiang Fang

Frequent Co-Authors

Cynthia M. Friend
Cynthia M. Friend Harvard University
Sheng Meng
Sheng Meng Chinese Academy of Sciences
Sauro Succi
Sauro Succi Italian Institute of Technology
Ekin D. Cubuk
Ekin D. Cubuk Google (United States)
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Adam Gali
Adam Gali Budapest University of Technology and Economics
Mitchell Luskin
Mitchell Luskin University of Minnesota

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