World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
74
Citations
20673
World Ranking
3611
National Ranking
1157

Sheng Meng publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Sheng Meng sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 346 publications — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Sheng Meng D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Sheng Meng sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 74 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Sheng Meng is affiliated with the Chinese Academy of Sciences in China and has made significant contributions across several scientific domains, primarily focusing on materials science, physics, and engineering. Their research productivity spans over numerous areas, including materials chemistry, atomic and molecular physics, and electrical engineering.

The core fields of study where Sheng Meng has contributed extensively include:

  • Materials Science
  • Physics and Astronomy
  • Engineering

Within these fields, more specialized subfields that Meng has focused on are:

  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

The main topics of Meng's work reflect a strong emphasis on advanced materials and their properties:

  • 2D Materials and Applications
  • Topological Materials and Phenomena
  • Advanced Thermoelectric Materials and Devices
  • Graphene research and applications
  • Electronic and Structural Properties of Oxides
  • Thermal properties of materials
  • Spectroscopy and Quantum Chemical Studies

Sheng Meng has co-authored extensively with a group of frequent collaborators, indicating an active research network. These co-authors include:

  • Yinchang Zhao
  • Zhenhong Dai
  • Jun Ni
  • Mengxue Guan
  • Daqiang Chen

Their work has been published in numerous prominent venues, with multiple papers in key journals and preprint servers. The frequent publication venues are:

  • arXiv (Cornell University)
  • Physical Review B
  • Nano Letters
  • Nature Communications
  • Physical Review Letters

Among Sheng Meng's recent papers are several influential publications, illustrating ongoing research contributions. Selected recent works include:

  • "Pseudospin-selective Floquet band engineering in black phosphorus," 2023, Nature
  • "Laser picoscopy of valence electrons in solids," 2020, Nature
  • "Observation of Topological Flat Bands in the Kagome Semiconductor Nb3Cl8," 2022, Nano Letters
  • "The 2021 ultrafast spectroscopic probes of condensed matter roadmap," 2021, Journal of Physics Condensed Matter
  • "Giant enhancement of optical nonlinearity in two-dimensional materials by multiphoton-excitation resonance energy transfer from quantum dots," 2021, Nature Photonics

Best Publications

  • Experimental realization of two-dimensional boron sheets

    Baojie Feng;Jin Zhang;Qing Zhong;Wenbin Li

  • Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)

    Baojie Feng;Zijing Ding;Sheng Meng;Yugui Yao;Yugui Yao

  • Evidence for Dirac fermions in a honeycomb lattice based on silicon.

    Lan Chen;Cheng-Cheng Liu;Baojie Feng;Xiaoyue He

  • Water adsorption on metal surfaces: A general picture from density functional theory studies

    Sheng Meng;Sheng Meng;Enge Wang;Shiwu Gao

  • Graphene NanoFlakes with Large Spin

    Wei L. Wang;Sheng Meng;Efthimios Kaxiras

  • Dirac Fermions in Borophene.

    Baojie Feng;Osamu Sugino;Ro Ya Liu;Jin Zhang

  • Adsorption and Diffusion of Lithium on Layered Silicon for Li-Ion Storage

    Georgios A. Tritsaris;Efthimios Kaxiras;Sheng Meng;Enge Wang

  • Topological frustration in graphene nanoflakes: magnetic order and spin logic devices.

    Wei L. Wang;Oleg V. Yazyev;Sheng Meng;Efthimios Kaxiras

  • Vibrational recognition of hydrogen-bonded water networks on a metal surface

    Sheng Meng;Sheng Meng;L. F. Xu;E. G. Wang;Shiwu Gao

  • Natural dyes adsorbed on TiO2 nanowire for photovoltaic applications: enhanced light absorption and ultrafast electron injection.

    Sheng Meng;Jun Ren;Efthimios Kaxiras

  • Spontaneous symmetry breaking and dynamic phase transition in monolayer silicene.

    Lan Chen;Hui Li;Baojie Feng;Zijing Ding

  • Towards understanding the effects of carbon and nitrogen-doped carbon coating on the electrochemical performance of Li4Ti5O12 in lithium ion batteries: a combined experimental and theoretical study

    Zijing Ding;Liang Zhao;Liumin Suo;Yang Jiao

  • Real-time, local basis-set implementation of time-dependent density functional theory for excited state dynamics simulations.

    Sheng Meng;Efthimios Kaxiras

  • Structural Model of Eumelanin

    Efthimios Kaxiras;Argyrios Tsolakidis;George Zonios;Sheng Meng

  • First Principles Design of Dye Molecules with Ullazine Donor for Dye Sensitized Solar Cells

    Jie Feng;Yang Jiao;Wei Ma;Md. K. Nazeeruddin

  • Direct evidence of metallic bands in a monolayer boron sheet

    Baojie Feng;Jin Zhang;Ro-Ya Liu;Takushi Iimori

  • DNA Nucleoside Interaction and Identification with Carbon Nanotubes

    Sheng Meng;Paul Maragakis;Costas Papaloukas;Efthimios Kaxiras

  • Complexation of Flavonoids with Iron: Structure and Optical Signatures

    Jun Ren;Sheng Meng;Ch. E. Lekka;Efthimios Kaxiras

  • Electron and hole dynamics in dye-sensitized solar cells: influencing factors and systematic trends.

    Sheng Meng;Sheng Meng;Efthimios Kaxiras

  • Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

    Jing Liang;Jin Zhang;Zhenzhu Li;Hao Hong

  • Emergence of electron coherence and two-color all-optical switching in MoS2 based on spatial self-phase modulation

    Yanling Wu;Qiong Wu;Fei Sun;Cai Cheng

Frequent Co-Authors

Hui Li
Hui Li Beijing University of Chemical Technology
Efthimios Kaxiras
Efthimios Kaxiras Harvard University
Enge Wang
Enge Wang Peking University
Kehui Wu
Kehui Wu Chinese Academy of Sciences
Kaihui Liu
Kaihui Liu Peking University
Xuefeng Guo
Xuefeng Guo Peking University
Lin Gu
Lin Gu Chinese Academy of Sciences
Xiao Cheng Zeng
Xiao Cheng Zeng City University of Hong Kong
Shengbai Zhang
Shengbai Zhang Rensselaer Polytechnic Institute
Weihua Wang
Weihua Wang Chinese Academy of Sciences

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