Shengbai Zhang mainly investigates Condensed matter physics, Band gap, Doping, Crystallography and Semiconductor. His Condensed matter physics research incorporates elements of Zigzag, Fermi level and Order of magnitude. The study incorporates disciplines such as Inorganic chemistry, Heterojunction, Electronic structure, Atomic physics and Electronic band structure in addition to Band gap.
His Doping research is multidisciplinary, incorporating perspectives in Molecule, Thin film, Impurity and Infrared spectroscopy. His Crystallography research is multidisciplinary, incorporating elements of Energy, Phase and Nitrogen. Shengbai Zhang interconnects Phenomenological model and Nanotechnology in the investigation of issues within Semiconductor.
His scientific interests lie mostly in Condensed matter physics, Band gap, Semiconductor, Doping and Crystallography. His Fermi level research extends to Condensed matter physics, which is thematically connected. His research integrates issues of Chemical physics and Density functional theory in his study of Band gap.
His research in Doping intersects with topics in Acceptor and Analytical chemistry. The Crystallography study combines topics in areas such as Hydrogen and Phase. His research in Hydrogen intersects with topics in Binding energy and Atomic physics.
His primary areas of study are Condensed matter physics, Band gap, Semiconductor, Chemical physics and Optoelectronics. His Condensed matter physics study incorporates themes from Fermi level and Graphene. As a part of the same scientific study, he usually deals with the Band gap, concentrating on Electronic structure and frequently concerns with Transition metal and Electronic band structure.
His research in Semiconductor focuses on subjects like Doping, which are connected to Monolayer. He studied Chemical physics and Vacancy defect that intersect with GeSbTe. His Optoelectronics research is multidisciplinary, incorporating perspectives in Thin film, Absorption and Epitaxy.
His primary scientific interests are in Condensed matter physics, Semiconductor, Phase transition, Fermi level and Band gap. His Condensed matter physics study integrates concerns from other disciplines, such as Graphene and Nucleation. His work carried out in the field of Semiconductor brings together such families of science as Molecular physics, Chalcogenide, Ionization energy and Density functional theory.
His biological study spans a wide range of topics, including Chemical physics, Spintronics, Phase, Landau quantization and Vacancy defect. His work in Chemical physics tackles topics such as Crystallography which are related to areas like Phase-change memory and Chemical vapor deposition. His Band gap study combines topics in areas such as Work, Nanotechnology, Topological insulator, Spectroscopy and van der Waals force.
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Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO
S. B. Zhang;S.-H. Wei;Alex Zunger.
Physical Review B (2001)
Defect physics of the CuInSe 2 chalcopyrite semiconductor
S. B. Zhang;Su-Huai Wei;Alex Zunger;H. Katayama-Yoshida.
Physical Review B (1998)
Origin of p -type doping difficulty in ZnO: The impurity perspective
C. H. Park;C. H. Park;S. B. Zhang;Su-Huai Wei.
Physical Review B (2002)
Chemical potential dependence of defect formation energies in GaAs : application to Ga self-diffusion
S. B. Zhang;John E. Northrup.
Physical Review Letters (1991)
MoS2 nanoribbons: high stability and unusual electronic and magnetic properties.
Yafei Li;Zhen Zhou;Shengbai Zhang;Zhongfang Chen.
Journal of the American Chemical Society (2008)
Hydrogen storage in novel organometallic buckyballs.
Yufeng Zhao;Yong-Hyun Kim;A. C. Dillon;M. J. Heben.
Physical Review Letters (2005)
Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide.
Sukit Limpijumnong;S. B. Zhang;Su-Huai Wei;C. H. Park.
Physical Review Letters (2004)
Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
Su-Huai Wei;S. B. Zhang.
Physical Review B (2002)
Evidence for native-defect donors in n-type ZnO.
David C. Look;David C. Look;Gary C. Farlow;Pakpoom Reunchan;Sukit Limpijumnong.
Physical Review Letters (2005)
Control of Doping by Impurity Chemical Potentials: Predictions for p-Type ZnO
Yanfa Yan;S. B. Zhang;S. T. Pantelides;S. T. Pantelides.
Physical Review Letters (2001)
Nano Energy
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