World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
100
Citations
44268
World Ranking
1039
National Ranking
340

Shengbai Zhang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Shengbai Zhang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 604 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Shengbai Zhang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Shengbai Zhang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 100 D-Index — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Condensed matter physics

Shengbai Zhang mainly investigates Condensed matter physics, Band gap, Doping, Crystallography and Semiconductor. His Condensed matter physics research incorporates elements of Zigzag, Fermi level and Order of magnitude. The study incorporates disciplines such as Inorganic chemistry, Heterojunction, Electronic structure, Atomic physics and Electronic band structure in addition to Band gap.

His Doping research is multidisciplinary, incorporating perspectives in Molecule, Thin film, Impurity and Infrared spectroscopy. His Crystallography research is multidisciplinary, incorporating elements of Energy, Phase and Nitrogen. Shengbai Zhang interconnects Phenomenological model and Nanotechnology in the investigation of issues within Semiconductor.

His most cited work include:

  • Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO (1515 citations)
  • Defect physics of the CuInSe 2 chalcopyrite semiconductor (1020 citations)
  • Chemical potential dependence of defect formation energies in GaAs : application to Ga self-diffusion (1006 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Condensed matter physics, Band gap, Semiconductor, Doping and Crystallography. His Fermi level research extends to Condensed matter physics, which is thematically connected. His research integrates issues of Chemical physics and Density functional theory in his study of Band gap.

His research in Doping intersects with topics in Acceptor and Analytical chemistry. The Crystallography study combines topics in areas such as Hydrogen and Phase. His research in Hydrogen intersects with topics in Binding energy and Atomic physics.

He most often published in these fields:

  • Condensed matter physics (42.19%)
  • Band gap (20.00%)
  • Semiconductor (16.09%)

What were the highlights of his more recent work (between 2015-2021)?

  • Condensed matter physics (42.19%)
  • Band gap (20.00%)
  • Semiconductor (16.09%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Condensed matter physics, Band gap, Semiconductor, Chemical physics and Optoelectronics. His Condensed matter physics study incorporates themes from Fermi level and Graphene. As a part of the same scientific study, he usually deals with the Band gap, concentrating on Electronic structure and frequently concerns with Transition metal and Electronic band structure.

His research in Semiconductor focuses on subjects like Doping, which are connected to Monolayer. He studied Chemical physics and Vacancy defect that intersect with GeSbTe. His Optoelectronics research is multidisciplinary, incorporating perspectives in Thin film, Absorption and Epitaxy.

Between 2015 and 2021, his most popular works were:

  • Towards three-dimensional Weyl-surface semimetals in graphene networks (111 citations)
  • Revealing The Biexciton And Trion-exciton Complexes In Bn Encapsulated Wse2 (97 citations)
  • Towards Three-Dimensional Weyl-SurfaceSemimetals in Graphene Networks (96 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Condensed matter physics

His primary scientific interests are in Condensed matter physics, Semiconductor, Phase transition, Fermi level and Band gap. His Condensed matter physics study integrates concerns from other disciplines, such as Graphene and Nucleation. His work carried out in the field of Semiconductor brings together such families of science as Molecular physics, Chalcogenide, Ionization energy and Density functional theory.

His biological study spans a wide range of topics, including Chemical physics, Spintronics, Phase, Landau quantization and Vacancy defect. His work in Chemical physics tackles topics such as Crystallography which are related to areas like Phase-change memory and Chemical vapor deposition. His Band gap study combines topics in areas such as Work, Nanotechnology, Topological insulator, Spectroscopy and van der Waals force.

Best Publications

  • Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO

    S. B. Zhang;S.-H. Wei;Alex Zunger

  • Chemical potential dependence of defect formation energies in GaAs : application to Ga self-diffusion

    S. B. Zhang;John E. Northrup

  • Defect physics of the CuInSe 2 chalcopyrite semiconductor

    S. B. Zhang;Su-Huai Wei;Alex Zunger;H. Katayama-Yoshida

  • Origin of p -type doping difficulty in ZnO: The impurity perspective

    C. H. Park;C. H. Park;S. B. Zhang;Su-Huai Wei

  • MoS2 nanoribbons: high stability and unusual electronic and magnetic properties.

    Yafei Li;Zhen Zhou;Shengbai Zhang;Zhongfang Chen

  • Hydrogen storage in novel organometallic buckyballs.

    Yufeng Zhao;Yong-Hyun Kim;A. C. Dillon;M. J. Heben

  • Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe

    Su-Huai Wei;S. B. Zhang

  • Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide.

    Sukit Limpijumnong;Sukit Limpijumnong;S. B. Zhang;Su-Huai Wei;C. H. Park;C. H. Park

  • Graphene oxide: A promising nanomaterial for energy and environmental applications

    Fen Li;Xue Jiang;Jijun Zhao;Shengbai Zhang

  • First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys

    Su-Huai Wei;S. B. Zhang;Alex Zunger

  • Strong Covalency-Induced Recombination Centers in Perovskite Solar Cell Material CH3NH3PbI3

    Michael L. Agiorgousis;Yi-Yang Sun;Hao Zeng;Shengbai Zhang

  • Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties

    Su-Huai Wei;S. B. Zhang;Alex Zunger

  • Evidence for native-defect donors in n-type ZnO.

    David C. Look;David C. Look;Gary C. Farlow;Pakpoom Reunchan;Sukit Limpijumnong

  • A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds

    S. B. Zhang;Su-Huai Wei;Alex Zunger

  • Control of Doping by Impurity Chemical Potentials: Predictions for p-Type ZnO

    Yanfa Yan;S. B. Zhang;S. T. Pantelides;S. T. Pantelides

  • First-principles study of native defects in anatase TiO2

    Sutassana Na-Phattalung;M. F. Smith;Kwiseon Kim;Mao-Hua Du

  • Stabilization of Ternary Compounds via Ordered Arrays of Defect Pairs

    S. B. Zhang;Su-Huai Wei;Alex Zunger

  • Graphene oxide as an ideal substrate for hydrogen storage.

    Lu Wang;Kyuho Lee;Yi-Yang Sun;Michael Lucking

  • Bipolar doping and band-gap anomalies in delafossite transparent conductive oxides.

    Xiliang Nie;Su-Huai Wei;S. B. Zhang

  • Flatbands and Emergent Ferromagnetic Ordering in Fe 3 Sn 2 Kagome Lattices

    Zhiyong Lin;Jin Ho Choi;Qiang Zhang;Wei Qin

  • Spontaneous assembly of perfectly ordered identical-size nanocluster arrays.

    Jian-Long Li;Jin-Feng Jia;Xue-Jin Liang;Xi Liu

Frequent Co-Authors

Yi-Yang Sun
Yi-Yang Sun Chinese Academy of Sciences
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Yong-Hyun Kim
Yong-Hyun Kim Korea Advanced Institute of Science and Technology
Marvin L. Cohen
Marvin L. Cohen University of California, Berkeley
Alex Zunger
Alex Zunger University of Colorado Boulder
Qi-Kun Xue
Qi-Kun Xue Southern University of Science and Technology
Hong-Bo Sun
Hong-Bo Sun Tsinghua University
Wenhui Duan
Wenhui Duan Tsinghua University
Michael J. Heben
Michael J. Heben University of Toledo
Zhongfang Chen
Zhongfang Chen University of Puerto Rico at Río Piedras

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