D-Index & Metrics Best Publications

Shengbai Zhang

Rensselaer Polytechnic Institute
United States

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Materials Science D-index 91 Citations 35,480 554 World Ranking 821 National Ranking 316

Overview

What is he best known for?

The fields of study Shengbai Zhang is best known for:

Semiconductor
Graphene
Hydrogen

His study looks at the relationship between Topological insulator and fields such as Condensed matter physics, as well as how they intersect with chemical problems. His Optoelectronics research extends to Doping, which is thematically connected. His study ties his expertise on Insulator (electricity) together with the subject of Optoelectronics. His research on Electronic structure often connects related areas such as Condensed matter physics. Shengbai Zhang links relevant research areas such as Topology (electrical circuits) and Insulator (electricity) in the realm of Electrical engineering. His work on Electrical engineering expands to the thematically related Topology (electrical circuits). While working in this field, Shengbai Zhang studies both Nanotechnology and Chemical physics. He performs multidisciplinary studies into Chemical physics and Nanotechnology in his work. He merges Graphene with Nanomaterials in his research.

His most cited work include:

Graphene Oxide as an Ideal Substrate for Hydrogen Storage (324 citations)
Hydrogenation: A Simple Approach To Realize Semiconductor−Half-Metal−Metal Transition in Boron Nitride Nanoribbons (266 citations)
Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure (190 citations)

What are the main themes of his work throughout his whole career to date

Shengbai Zhang applies his multidisciplinary studies on Nanotechnology and Molecule in his research. His work often combines Molecule and Nanotechnology studies. He integrates Organic chemistry with Inorganic chemistry in his research. He performs integrative Inorganic chemistry and Organic chemistry research in his work. Shengbai Zhang conducts interdisciplinary study in the fields of Computational chemistry and Density functional theory through his works. He undertakes multidisciplinary studies into Density functional theory and Computational chemistry in his work. He incorporates Chemical physics and Chemical bond in his research. Shengbai Zhang performs multidisciplinary study in Chemical bond and Chemical physics in his work. His work blends Graphene and Nanomaterials studies together.

Shengbai Zhang most often published in these fields:

Nanotechnology (77.78%)
Organic chemistry (72.22%)
Computational chemistry (55.56%)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO

S. B. Zhang;S.-H. Wei;Alex Zunger.
Physical Review B (2001)

2283 Citations

Chemical potential dependence of defect formation energies in GaAs : application to Ga self-diffusion

S. B. Zhang;John E. Northrup.
Physical Review Letters (1991)

1680 Citations

Defect physics of the CuInSe 2 chalcopyrite semiconductor

S. B. Zhang;Su-Huai Wei;Alex Zunger;H. Katayama-Yoshida.
Physical Review B (1998)

1554 Citations

Origin of p -type doping difficulty in ZnO: The impurity perspective

C. H. Park;C. H. Park;S. B. Zhang;Su-Huai Wei.
Physical Review B (2002)

1532 Citations

MoS2 nanoribbons: high stability and unusual electronic and magnetic properties.

Yafei Li;Zhen Zhou;Shengbai Zhang;Zhongfang Chen.
Journal of the American Chemical Society (2008)

929 Citations

Hydrogen storage in novel organometallic buckyballs.

Yufeng Zhao;Yong-Hyun Kim;A. C. Dillon;M. J. Heben.
Physical Review Letters (2005)

801 Citations

Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide.

Sukit Limpijumnong;Sukit Limpijumnong;S. B. Zhang;Su-Huai Wei;C. H. Park;C. H. Park.
Physical Review Letters (2004)

765 Citations

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe

Su-Huai Wei;S. B. Zhang.
Physical Review B (2002)

703 Citations

First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys

Su-Huai Wei;S. B. Zhang;Alex Zunger.
Journal of Applied Physics (2000)

519 Citations

Graphene oxide: A promising nanomaterial for energy and environmental applications

Fen Li;Xue Jiang;Jijun Zhao;Shengbai Zhang.
Nano Energy (2015)

497 Citations

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Frequent Co-Authors

External Links

Personal Website for Shengbai Zhang