His study looks at the relationship between Topological insulator and fields such as Condensed matter physics, as well as how they intersect with chemical problems. His Optoelectronics research extends to Doping, which is thematically connected. His study ties his expertise on Insulator (electricity) together with the subject of Optoelectronics. His research on Electronic structure often connects related areas such as Condensed matter physics. Shengbai Zhang links relevant research areas such as Topology (electrical circuits) and Insulator (electricity) in the realm of Electrical engineering. His work on Electrical engineering expands to the thematically related Topology (electrical circuits). While working in this field, Shengbai Zhang studies both Nanotechnology and Chemical physics. He performs multidisciplinary studies into Chemical physics and Nanotechnology in his work. He merges Graphene with Nanomaterials in his research.
Shengbai Zhang applies his multidisciplinary studies on Nanotechnology and Molecule in his research. His work often combines Molecule and Nanotechnology studies. He integrates Organic chemistry with Inorganic chemistry in his research. He performs integrative Inorganic chemistry and Organic chemistry research in his work. Shengbai Zhang conducts interdisciplinary study in the fields of Computational chemistry and Density functional theory through his works. He undertakes multidisciplinary studies into Density functional theory and Computational chemistry in his work. He incorporates Chemical physics and Chemical bond in his research. Shengbai Zhang performs multidisciplinary study in Chemical bond and Chemical physics in his work. His work blends Graphene and Nanomaterials studies together.
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Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO
S. B. Zhang;S.-H. Wei;Alex Zunger.
Physical Review B (2001)
Chemical potential dependence of defect formation energies in GaAs : application to Ga self-diffusion
S. B. Zhang;John E. Northrup.
Physical Review Letters (1991)
Defect physics of the CuInSe 2 chalcopyrite semiconductor
S. B. Zhang;Su-Huai Wei;Alex Zunger;H. Katayama-Yoshida.
Physical Review B (1998)
Origin of p -type doping difficulty in ZnO: The impurity perspective
C. H. Park;C. H. Park;S. B. Zhang;Su-Huai Wei.
Physical Review B (2002)
MoS2 nanoribbons: high stability and unusual electronic and magnetic properties.
Yafei Li;Zhen Zhou;Shengbai Zhang;Zhongfang Chen.
Journal of the American Chemical Society (2008)
Hydrogen storage in novel organometallic buckyballs.
Yufeng Zhao;Yong-Hyun Kim;A. C. Dillon;M. J. Heben.
Physical Review Letters (2005)
Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide.
Sukit Limpijumnong;Sukit Limpijumnong;S. B. Zhang;Su-Huai Wei;C. H. Park;C. H. Park.
Physical Review Letters (2004)
Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
Su-Huai Wei;S. B. Zhang.
Physical Review B (2002)
First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys
Su-Huai Wei;S. B. Zhang;Alex Zunger.
Journal of Applied Physics (2000)
Graphene oxide: A promising nanomaterial for energy and environmental applications
Fen Li;Xue Jiang;Jijun Zhao;Shengbai Zhang.
Nano Energy (2015)
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