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Shengbai Zhang

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 100 1039 991 340 313 604 44268

Shengbai Zhang publications per year

The chart shows the history of publications by Shengbai Zhang between 1984 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Shengbai Zhang published across 42 years, from 1984 to 2025, averaging 17.1 papers a year. Output peaked at 65 publications in 2025. 80 of the 717 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 1984 to 2025. Vertical axis: number of publications, 0 to 65. Peak 65 publications in 2025. 1984: 1 publication 1985: 3 publications 1986: 2 publications 1987: 3 publications 1988: 3 publications 1989: 8 publications 1990: 14 publications 1991: 8 publications 1992: 0 publications 1993: 7 publications 1994: 4 publications 1995: 4 publications 1996: 6 publications 1997: 7 publications 1998: 3 publications 1999: 7 publications 2000: 12 publications 2001: 15 publications 2002: 25 publications 2003: 12 publications 2004: 20 publications 2005: 25 publications 2006: 29 publications 2007: 23 publications 2008: 26 publications 2009: 18 publications 2010: 19 publications 2011: 18 publications 2012: 24 publications 2013: 25 publications 2014: 26 publications 2015: 27 publications 2016: 41 publications 2017: 35 publications 2018: 39 publications 2019: 25 publications 2020: 24 publications 2021: 23 publications 2022: 18 publications 2023: 8 publications 2024: 15 publications 2025: 65 publications
1984 2025

717 publications in total across all disciplines

View publications per year as a table
Shengbai Zhang: publications per year, 1984 to 2025
Year Publications
1984 1
1985 3
1986 2
1987 3
1988 3
1989 8
1990 14
1991 8
1992 0
1993 7
1994 4
1995 4
1996 6
1997 7
1998 3
1999 7
2000 12
2001 15
2002 25
2003 12
2004 20
2005 25
2006 29
2007 23
2008 26
2009 18
2010 19
2011 18
2012 24
2013 25
2014 26
2015 27
2016 41
2017 35
2018 39
2019 25
2020 24
2021 23
2022 18
2023 8
2024 15
2025 65
Total 717
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Shengbai Zhang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Shengbai Zhang sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 590–609 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 604 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103 604
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Shengbai Zhang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Shengbai Zhang sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 100–101 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 100 D-Index — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88 100
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Condensed matter physics

Shengbai Zhang mainly investigates Condensed matter physics, Band gap, Doping, Crystallography and Semiconductor. His Condensed matter physics research incorporates elements of Zigzag, Fermi level and Order of magnitude. The study incorporates disciplines such as Inorganic chemistry, Heterojunction, Electronic structure, Atomic physics and Electronic band structure in addition to Band gap.

His Doping research is multidisciplinary, incorporating perspectives in Molecule, Thin film, Impurity and Infrared spectroscopy. His Crystallography research is multidisciplinary, incorporating elements of Energy, Phase and Nitrogen. Shengbai Zhang interconnects Phenomenological model and Nanotechnology in the investigation of issues within Semiconductor.

His most cited work include:

  • Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO (1515 citations)
  • Defect physics of the CuInSe 2 chalcopyrite semiconductor (1020 citations)
  • Chemical potential dependence of defect formation energies in GaAs : application to Ga self-diffusion (1006 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Condensed matter physics, Band gap, Semiconductor, Doping and Crystallography. His Fermi level research extends to Condensed matter physics, which is thematically connected. His research integrates issues of Chemical physics and Density functional theory in his study of Band gap.

His research in Doping intersects with topics in Acceptor and Analytical chemistry. The Crystallography study combines topics in areas such as Hydrogen and Phase. His research in Hydrogen intersects with topics in Binding energy and Atomic physics.

He most often published in these fields:

  • Condensed matter physics (42.19%)
  • Band gap (20.00%)
  • Semiconductor (16.09%)

What were the highlights of his more recent work (between 2015-2021)?

  • Condensed matter physics (42.19%)
  • Band gap (20.00%)
  • Semiconductor (16.09%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Condensed matter physics, Band gap, Semiconductor, Chemical physics and Optoelectronics. His Condensed matter physics study incorporates themes from Fermi level and Graphene. As a part of the same scientific study, he usually deals with the Band gap, concentrating on Electronic structure and frequently concerns with Transition metal and Electronic band structure.

His research in Semiconductor focuses on subjects like Doping, which are connected to Monolayer. He studied Chemical physics and Vacancy defect that intersect with GeSbTe. His Optoelectronics research is multidisciplinary, incorporating perspectives in Thin film, Absorption and Epitaxy.

Between 2015 and 2021, his most popular works were:

  • Towards three-dimensional Weyl-surface semimetals in graphene networks (111 citations)
  • Revealing The Biexciton And Trion-exciton Complexes In Bn Encapsulated Wse2 (97 citations)
  • Towards Three-Dimensional Weyl-SurfaceSemimetals in Graphene Networks (96 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Condensed matter physics

His primary scientific interests are in Condensed matter physics, Semiconductor, Phase transition, Fermi level and Band gap. His Condensed matter physics study integrates concerns from other disciplines, such as Graphene and Nucleation. His work carried out in the field of Semiconductor brings together such families of science as Molecular physics, Chalcogenide, Ionization energy and Density functional theory.

His biological study spans a wide range of topics, including Chemical physics, Spintronics, Phase, Landau quantization and Vacancy defect. His work in Chemical physics tackles topics such as Crystallography which are related to areas like Phase-change memory and Chemical vapor deposition. His Band gap study combines topics in areas such as Work, Nanotechnology, Topological insulator, Spectroscopy and van der Waals force.

Best Publications

  • Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO

    S. B. Zhang;S.-H. Wei;Alex Zunger

  • Chemical potential dependence of defect formation energies in GaAs : application to Ga self-diffusion

    S. B. Zhang;John E. Northrup

  • Defect physics of the CuInSe 2 chalcopyrite semiconductor

    S. B. Zhang;Su-Huai Wei;Alex Zunger;H. Katayama-Yoshida

  • Origin of p -type doping difficulty in ZnO: The impurity perspective

    C. H. Park;C. H. Park;S. B. Zhang;Su-Huai Wei

  • MoS2 nanoribbons: high stability and unusual electronic and magnetic properties.

    Yafei Li;Zhen Zhou;Shengbai Zhang;Zhongfang Chen

  • Hydrogen storage in novel organometallic buckyballs.

    Yufeng Zhao;Yong-Hyun Kim;A. C. Dillon;M. J. Heben

  • Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe

    Su-Huai Wei;S. B. Zhang

  • Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide.

    Sukit Limpijumnong;Sukit Limpijumnong;S. B. Zhang;Su-Huai Wei;C. H. Park;C. H. Park

  • Graphene oxide: A promising nanomaterial for energy and environmental applications

    Fen Li;Xue Jiang;Jijun Zhao;Shengbai Zhang

  • First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys

    Su-Huai Wei;S. B. Zhang;Alex Zunger

  • Strong Covalency-Induced Recombination Centers in Perovskite Solar Cell Material CH3NH3PbI3

    Michael L. Agiorgousis;Yi-Yang Sun;Hao Zeng;Shengbai Zhang

  • Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties

    Su-Huai Wei;S. B. Zhang;Alex Zunger

  • Evidence for native-defect donors in n-type ZnO.

    David C. Look;David C. Look;Gary C. Farlow;Pakpoom Reunchan;Sukit Limpijumnong

  • A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds

    S. B. Zhang;Su-Huai Wei;Alex Zunger

  • Control of Doping by Impurity Chemical Potentials: Predictions for p-Type ZnO

    Yanfa Yan;S. B. Zhang;S. T. Pantelides;S. T. Pantelides

  • First-principles study of native defects in anatase TiO2

    Sutassana Na-Phattalung;M. F. Smith;Kwiseon Kim;Mao-Hua Du

  • Stabilization of Ternary Compounds via Ordered Arrays of Defect Pairs

    S. B. Zhang;Su-Huai Wei;Alex Zunger

  • Graphene oxide as an ideal substrate for hydrogen storage.

    Lu Wang;Kyuho Lee;Yi-Yang Sun;Michael Lucking

  • Bipolar doping and band-gap anomalies in delafossite transparent conductive oxides.

    Xiliang Nie;Su-Huai Wei;S. B. Zhang

  • Flatbands and Emergent Ferromagnetic Ordering in Fe 3 Sn 2 Kagome Lattices

    Zhiyong Lin;Jin Ho Choi;Qiang Zhang;Wei Qin

  • Spontaneous assembly of perfectly ordered identical-size nanocluster arrays.

    Jian-Long Li;Jin-Feng Jia;Xue-Jin Liang;Xi Liu

Frequent Co-Authors

Yi-Yang Sun
Yi-Yang Sun Chinese Academy of Sciences
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Yong-Hyun Kim
Yong-Hyun Kim Korea Advanced Institute of Science and Technology
Marvin L. Cohen
Marvin L. Cohen University of California, Berkeley
Alex Zunger
Alex Zunger University of Colorado Boulder
Qi-Kun Xue
Qi-Kun Xue Southern University of Science and Technology
Hong-Bo Sun
Hong-Bo Sun Tsinghua University
Wenhui Duan
Wenhui Duan Tsinghua University
Michael J. Heben
Michael J. Heben University of Toledo
Zhongfang Chen
Zhongfang Chen University of Puerto Rico at Río Piedras

External Links

Personal website of Shengbai Zhang Google Scholar page

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Best Scientists Citing Shengbai Zhang

Qi-Kun Xue

Qi-Kun Xue

Southern University of Science and Technology

Publications: 113

Yanfa Yan

Yanfa Yan

University of Toledo

Publications: 85

Su-Huai Wei

Su-Huai Wei

Eastern Institute of Technology, Ningbo

Publications: 80

Aron Walsh

Aron Walsh

Imperial College London

Publications: 77

Mowafak Al-Jassim

Mowafak Al-Jassim

National Renewable Energy Laboratory

Publications: 71

Zhizhen Ye

Zhizhen Ye

Zhejiang University

Publications: 65

Haiping He

Haiping He

Zhejiang University

Publications: 63

Zhitang Song

Zhitang Song

Chinese Academy of Sciences

Publications: 59

Binghui Zhao

Binghui Zhao

Zhejiang University

Publications: 55

Shiyou Chen

Shiyou Chen

Fudan University

Publications: 55

Xucun Ma

Xucun Ma

Tsinghua University

Publications: 52

Jin-Feng Jia

Jin-Feng Jia

Shanghai Jiao Tong University

Publications: 52

Alex Zunger

Alex Zunger

University of Colorado Boulder

Publications: 52

Jianguo Lu

Jianguo Lu

Zhejiang University

Publications: 50

Xiao Cheng Zeng

Xiao Cheng Zeng

City University of Hong Kong

Publications: 49

Jijun Zhao

Jijun Zhao

Dalian University of Technology

Publications: 48

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