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Materials Science
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2026
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China
2026

D-Index & Metrics

Materials Science

D-Index
137
Citations
75315
World Ranking
260
National Ranking
72

Physics

D-Index
139
Citations
81115
World Ranking
420
National Ranking
4

Su-Huai Wei publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Su-Huai Wei sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 761 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Su-Huai Wei D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Su-Huai Wei sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 137 D-Index — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Materials Science in China Leader Award
  • 2026 - Research.com Physics in China Leader Award
  • 2025 - Research.com Materials Science in China Leader Award
  • 2025 - Research.com Physics in China Leader Award
  • 2014 - Fellow of the Materials Research Society
  • 1999 - Fellow of American Physical Society (APS) Citation For contributions to the understanding of electronic structures and stabilities of compounds, alloys, interfaces, superlattices and impurities using firstprinciples calculations and for development of the methods for such calculations

Overview

Su-Huai Wei is affiliated with the Eastern Institute of Technology, Ningbo in China. Their research spans several interconnected fields, primarily within materials science and engineering. The scientist's work focuses on topics such as Materials Chemistry, Electrical and Electronic Engineering, and Condensed Matter Physics, reflecting a multidisciplinary approach.

Wei's main fields of study include:

  • Materials Science
  • Engineering

They have contributed extensively to subfields including:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

The scientist's research topics cover a range of specialized areas, particularly focused on semiconductor materials and related technologies:

  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Perovskite Materials and Applications
  • Semiconductor materials and devices
  • 2D Materials and Applications
  • ZnO doping and properties
  • Ga2O3 and related materials

Wei has published a notable number of recent papers. Selected examples include:

  • "Hydrogenated Cs2AgBiBr6 for significantly improved efficiency of lead-free inorganic double perovskite solar cell," 2022, Nature Communications
  • "Electron donation of non-oxide supports boosts O2 activation on nano-platinum catalysts," 2021, Nature Communications
  • "Crystal Facet Engineering on SrTiO3 Enhances Photocatalytic Overall Water Splitting," 2024, Journal of the American Chemical Society
  • "Formation of Bloch Flat Bands in Polar Twisted Bilayers without Magic Angles," 2020, Physical Review Letters
  • "Review of the Intermolecular Interactions in Energetic Molecular Cocrystals," 2020, Crystal Growth & Design

The scientist has often published in venues such as:

  • Physical Review B
  • arXiv (Cornell University)
  • The Journal of Physical Chemistry Letters
  • Journal of the American Chemical Society
  • Science China Physics Mechanics and Astronomy

Frequent collaborators include:

  • Xie Zhang
  • Xuefen Cai
  • Hui-Xiong Deng
  • Yu Song
  • Jingxiu Yang

Among the honors received by Su-Huai Wei are the Fellow of the Materials Research Society, awarded in 2014, and the Fellow of the American Physical Society in 1999. The latter fellowship citation recognizes contributions to the understanding of electronic structures and stabilities of compounds, alloys, interfaces, superlattices, and impurities using first-principles calculations, as well as the development of methods for such calculations.

Best Publications

  • Special quasirandom structures.

    Alex Zunger;S.-H. Wei;L. G. Ferreira;James E. Bernard

  • Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO

    S. B. Zhang;S.-H. Wei;Alex Zunger

  • Stabilizing Perovskite Structures by Tuning Tolerance Factor: Formation of Formamidinium and Cesium Lead Iodide Solid-State Alloys

    Zhen Li;Mengjin Yang;Ji-Sang Park;Su-Huai Wei

  • Defect physics of the CuInSe 2 chalcopyrite semiconductor

    S. B. Zhang;Su-Huai Wei;Alex Zunger;H. Katayama-Yoshida

  • Origin of p -type doping difficulty in ZnO: The impurity perspective

    C. H. Park;C. H. Park;S. B. Zhang;Su-Huai Wei

  • Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers.

    Shiyou Chen;Aron Walsh;Xin Gao Gong;Su Huai Wei

  • Halide perovskite materials for solar cells: a theoretical review

    Wan-Jian Yin;Wan-Jian Yin;Ji-Hui Yang;Joongoo Kang;Yanfa Yan

  • Electronic properties of random alloys : special quasirandom structures

    S.-H. Wei;L. G. Ferreira;James E. Bernard;Alex Zunger

  • Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals

    Su-Huai Wei;Alex Zunger

  • Design of Lead-Free Inorganic Halide Perovskites for Solar Cells via Cation-Transmutation

    Xin-Gang Zhao;Ji-Hui Yang;Yuhao Fu;Dongwen Yang

  • Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights

    Shiyou Chen;X. G. Gong;Aron Walsh;Su Huai Wei

  • Design of narrow-gap TiO2: a passivated codoping approach for enhanced photoelectrochemical activity.

    Yanqin Gai;Jingbo Li;Shu-Shen Li;Jian-Bai Xia

  • Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu(2)ZnSnS(4)

    Shiyou Chen;Shiyou Chen;Ji Hui Yang;X. G. Gong;Aron Walsh

  • Nature of the Band Gap of In2O3 Revealed by First-Principles Calculations and X-Ray Spectroscopy

    Aron Walsh;Juarez L.F. Da Silva;Su Huai Wei;C. Körber

  • Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe

    Su-Huai Wei;S. B. Zhang

  • Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide.

    Sukit Limpijumnong;Sukit Limpijumnong;S. B. Zhang;Su-Huai Wei;C. H. Park;C. H. Park

  • Band Edge Electronic Structure of BiVO4: Elucidating the Role of the Bi s and V d Orbitals

    Aron Walsh;Yanfa Yan;Muhammad N. Huda;Mowafak M. Al-Jassim

  • Gas sensing in 2D materials

    Shengxue Yang;Chengbao Jiang;Su-huai Wei

  • Kesterite Thin‐Film Solar Cells: Advances in Materials Modelling of Cu2ZnSnS4

    Aron Walsh;Shiyou Chen;Shiyou Chen;Su Huai Wei;Xin Gao Gong

  • Role of metal d states in II-VI semiconductors

    S.-H. Wei;Alex Zunger

  • Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends

    Su-Huai Wei;Alex Zunger

Frequent Co-Authors

Alex Zunger
Alex Zunger University of Colorado Boulder
Xingao Gong
Xingao Gong Fudan University
Shengbai Zhang
Shengbai Zhang Rensselaer Polytechnic Institute
Shiyou Chen
Shiyou Chen Fudan University
Hongjun Xiang
Hongjun Xiang Fudan University
Aron Walsh
Aron Walsh Imperial College London
Yanfa Yan
Yanfa Yan University of Toledo
Wan-Jian Yin
Wan-Jian Yin Soochow University
Juarez L. F. Da Silva
Juarez L. F. Da Silva Universidade de São Paulo
Shu-Shen Li
Shu-Shen Li Chinese Academy of Sciences

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