World's Best Scientists 2026 revealed!
Xingao Gong

Xingao Gong

D-Index & Metrics

Materials Science

D-Index
74
Citations
23215
World Ranking
3577
National Ranking
1148

Xingao Gong publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Xingao Gong sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 319 publications — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Xingao Gong D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Xingao Gong sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 74 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2009 - Fellow of American Physical Society (APS) Citation For innovative theoretical studies of the properties of clusters and wires, development of theoretical treatments of pressure effects on materials, and for tireless promotion of international collaborations in computational materials physics

Overview

Xingao Gong is affiliated with Fudan University in China and has an extensive publication record primarily in the fields of Materials Science and Engineering. Their research covers key subfields such as Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Artificial Intelligence.

The scientist has contributed significantly to topics including Machine Learning in Materials Science, 2D Materials and Applications, Chalcogenide Semiconductor Thin Films, Perovskite Materials and Applications, Quantum Dots Synthesis and Properties, MXene and MAX Phase Materials, and Topic Modeling.

Recent papers authored by Gong feature diverse advanced computational and materials research, notably:

  • Crystal structure prediction by combining graph network and optimization algorithm (2022), Nature Communications
  • Transferable equivariant graph neural networks for the Hamiltonians of molecules and solids (2023), npj Computational Materials
  • Kinetic pathway of γ-to-δ phase transition in CsPbI3 (2022), Chem
  • Effective lifetime of non-equilibrium carriers in semiconductors from non-adiabatic molecular dynamics simulations (2022), Nature Computational Science
  • Machine-learning assisted high-throughput discovery of solid-state electrolytes for Li-ion batteries (2024), Journal of Materials Chemistry A

Gong collaborates frequently with a number of researchers, including Hongjun Xiang, Ji-Hui Yang, Hongyu Yu, Mao Su, and Yang Zhong, suggesting active engagement in collaborative projects.

Publication venues where Gong's work appears recurrently include arXiv, Physical Review B, Zenodo, The Journal of Chemical Physics, and Research Square.

In 2009, Gong was awarded the title of Fellow of the American Physical Society (APS) for innovative theoretical studies in computational materials physics and contributions to international collaborations.

Best Publications

  • Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers.

    Shiyou Chen;Aron Walsh;Xin Gao Gong;Su Huai Wei

  • Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights

    Shiyou Chen;X. G. Gong;Aron Walsh;Su Huai Wei

  • Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu(2)ZnSnS(4)

    Shiyou Chen;Shiyou Chen;Ji Hui Yang;X. G. Gong;Aron Walsh

  • Kesterite Thin‐Film Solar Cells: Advances in Materials Modelling of Cu2ZnSnS4

    Aron Walsh;Shiyou Chen;Shiyou Chen;Su Huai Wei;Xin Gao Gong

  • Self‐Regulation Mechanism for Charged Point Defects in Hybrid Halide Perovskites

    Aron Walsh;David O. Scanlon;Shiyou Chen;Xingao Gong

  • Electronic structure and stability of quaternary chalcogenide semiconductors derived from cation cross-substitution of II-VI and I-III-VI2 compounds

    Shiyou Chen;X. G. Gong;Aron Walsh;Su Huai Wei

  • Compositional dependence of structural and electronic properties of Cu 2 ZnSn(S,Se) 4 alloys for thin film solar cells

    Shiyou Chen;Shiyou Chen;Aron Walsh;Ji Hui Yang;X. G. Gong

  • Thermal conductivity of graphene nanoribbons

    Zhixin Guo;Dier Zhang;Xin-Gao Gong

  • Magnetic properties and energy-mapping analysis

    Hongjun Xiang;Changhoon Lee;Hyun-Joo Koo;Xingao Gong

  • An Optimized Ultraviolet‐A Light Photodetector with Wide‐Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt

    Linfeng Hu;Jian Yan;Meiyong Liao;Hongjun Xiang

  • WO3 Nanoflakes for Enhanced Photoelectrochemical Conversion

    Wenjie Li;Peimei Da;Yueyu Zhang;Yongcheng Wang

  • Predicting the spin-lattice order of frustrated systems from first principles

    H. J. Xiang;E. J. Kan;Su-Huai Wei;M.-H. Whangbo

  • Predicting Two-Dimensional Boron-Carbon Compounds by the Global Optimization Method

    Xinyu Luo;Jihui Yang;Hanyu Liu;Xiaojun Wu

  • Wurtzite-derived polytypes of kesterite and stannite quaternary chalcogenide semiconductors

    Shiyou Chen;Shiyou Chen;Aron Walsh;Aron Walsh;Ye Luo;Ji Hui Yang

  • Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu‐ and Ag‐Based Kesterite Compounds

    Zhen Kun Yuan;Shiyou Chen;Hongjun Xiang;Xin Gao Gong

  • Valley and band structure engineering of folded MoS2 bilayers

    Tao Jiang;Hengrui Liu;Di Huang;Shuai Zhang

  • Influence of Defects and Synthesis Conditions on the Photovoltaic Performance of Perovskite Semiconductor CsSnI3

    Peng Xu;Shiyou Chen;Hong-Jun Xiang;Xin-Gao Gong

  • First-principles study on the electronic and optical properties of cubic ABX3 halide perovskites

    Li Lang;Ji-Hui Yang;Heng-Rui Liu;H.J. Xiang

  • Generalized simulated annealing algorithm and its application to the Thomson model

    Y Xiang;D.Y Sun;W Fan;X.G Gong

  • Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3

    Yue Yu Zhang;Shiyou Chen;Peng Xu;Hongjun Xiang

  • Effective band gap narrowing of anatase TiO2 by strain along a soft crystal direction

    Wan-Jian Yin;Shiyou Chen;Ji-Hui Yang;Xin-Gao Gong

  • Structural diversity and electronic properties of Cu2SnX3 (X=S, Se): A first-principles investigation

    Yingteng Zhai;Shiyou Chen;Jihui Yang;Hongjun Xiang

Frequent Co-Authors

Hongjun Xiang
Hongjun Xiang Fudan University
Shiyou Chen
Shiyou Chen Fudan University
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Aron Walsh
Aron Walsh Imperial College London
Qiang Sun
Qiang Sun Peking University
Wan-Jian Yin
Wan-Jian Yin Soochow University
Gengfeng Zheng
Gengfeng Zheng Fudan University
Myung-Hwan Whangbo
Myung-Hwan Whangbo North Carolina State University
Jing Tang
Jing Tang East China Normal University
Biao Kong
Biao Kong Fudan University

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