World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
65
Citations
14027
World Ranking
5669
National Ranking
1721

Fangyang Liu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Fangyang Liu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 254 publications — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Fangyang Liu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Fangyang Liu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 65 D-Index — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Fangyang Liu is affiliated with Central South University in China and has a substantial research record primarily in the fields of Engineering and Materials Science. Their work focuses heavily on Electrical and Electronic Engineering as well as Materials Chemistry, with notable contributions to Renewable Energy, Sustainability and the Environment, Mechanical Engineering, and Automotive Engineering.

Their research topics cover a variety of specialized areas, including:

  • Advancements in Battery Materials
  • Advanced Battery Materials and Technologies
  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Perovskite Materials and Applications
  • Copper-based nanomaterials and applications
  • Advanced Photocatalysis Techniques

Fangyang Liu has published extensively, with a significant number of papers appearing in recurring venues such as:

  • Advanced Functional Materials
  • Small
  • Journal of Central South University
  • SSRN Electronic Journal
  • Advanced Energy Materials

Some of their recent papers include:

  • Device Postannealing Enabling over 12% Efficient Solution-Processed Cu2ZnSnS4 Solar Cells with Cd2+ Substitution, 2020, Advanced Materials
  • Defect Control for 12.5% Efficiency Cu2ZnSnSe4 Kesterite Thin-Film Solar Cells by Engineering of Local Chemical Environment, 2020, Advanced Materials
  • Integrated Photorechargeable Energy Storage System: Next-Generation Power Source Driving the Future, 2020, Advanced Energy Materials
  • Perovskite-based tandem solar cells, 2020, Science Bulletin
  • Sulfur vacancy engineering of MoS2 via phosphorus incorporation for improved electrocatalytic N2 reduction to NH3, 2021, Applied Catalysis B: Environmental

Fangyang Liu collaborates frequently with other researchers, including:

  • Zongliang Zhang
  • Liangxing Jiang
  • Yanqing Lai
  • Ming Jia
  • Shenghao Jing

Best Publications

  • Cu 2 ZnSnS 4 solar cells with over 10% power conversion efficiency enabled by heterojunction heat treatment

    Chang Yan;Jialiang Huang;Kaiwen Sun;Steve Johnston

  • Self-Assembling Behavior of Cellulose Nanoparticles during Freeze-Drying: Effect of Suspension Concentration, Particle Size, Crystal Structure, and Surface Charge

    Jingquan Han;Chengjun Zhou;Yiqiang Wu;Fangyang Liu

  • Over 9% Efficient Kesterite Cu2ZnSnS4 Solar Cell Fabricated by Using Zn1–xCdxS Buffer Layer

    Kaiwen Sun;Chang Yan;Fangyang Liu;Fangyang Liu;Jialiang Huang

  • The current status and future prospects of kesterite solar cells: a brief review

    Xiaolei Liu;Yu Feng;Hongtao Cui;Fangyang Liu

  • MoS2 Nanosheets: A Designed Structure with High Active Site Density for the Hydrogen Evolution Reaction

    Zhuangzhi Wu;Baizeng Fang;Zhiping Wang;Changlong Wang

  • Fabrication of Cu2ZnSnS4 solar cells with 5.1% efficiency via thermal decomposition and reaction using a non-toxic sol-gel route

    Zhenghua Su;Kaiwen Sun;Zili Han;Hongtao Cui

  • Beyond 11% Efficient Sulfide Kesterite Cu2ZnxCd1–xSnS4 Solar Cell: Effects of Cadmium Alloying

    Chang Yan;Kaiwen Sun;Jialiang Huang;Steve Johnston

  • Device Postannealing Enabling over 12% Efficient Solution‐Processed Cu 2 ZnSnS 4 Solar Cells with Cd 2+ Substitution

    Zhenghua Su;Guangxing Liang;Ping Fan;Jingting Luo

  • Characterization of chemical bath deposited CdS thin films at different deposition temperature

    Fangyang Liu;Yanqing Lai;Jun Liu;Bo Wang

  • In situ growth of Cu2ZnSnS4 thin films by reactive magnetron co-sputtering

    Fangyang Liu;Yi Li;Kun Zhang;Bo Wang

  • Integrated photorechargeable energy storage system: next-generation power source driving the future

    Qiang Zeng;Yanqing Lai;Liangxing Jiang;Fangyang Liu

  • Defect Control for 12.5% Efficiency Cu 2 ZnSnSe 4 Kesterite Thin-Film Solar Cells by Engineering of Local Chemical Environment

    Jianjun Li;Jianjun Li;Yanchan Huang;Jialiang Huang;Guangxing Liang

  • Band alignments of different buffer layers (CdS, Zn(O,S), and In2S3) on Cu2ZnSnS4

    Chang Yan;Fangyang Liu;Ning Song;Boon K. Ng

  • Enhancing the Cu2ZnSnS4 solar cell efficiency by back contact modification: Inserting a thin TiB2 intermediate layer at Cu2ZnSnS4/Mo interface

    Fangyang Liu;Kaiwen Sun;Wei Li;Chang Yan

  • Synthesis and characterizations of quaternary Cu2FeSnS4 nanocrystals

    Chang Yan;Chun Huang;Jia Yang;Fangyang Liu

  • Fabrication of ternary Cu–Sn–S sulfides by a modified successive ionic layer adsorption and reaction (SILAR) method

    Zhenghua Su;Kaiwen Sun;Zili Han;Fangyang Liu

  • Perovskite-based tandem solar cells

    Zhimin Fang;Zhimin Fang;Qiang Zeng;Qiang Zeng;Chuantian Zuo;Lixiu Zhang

  • Polytype 1T/2H MoS2 heterostructures for efficient photoelectrocatalytic hydrogen evolution

    Dezhi Wang;Dezhi Wang;Boyu Su;Yan Jiang;Lu Li

  • Beyond 8% ultrathin kesterite Cu2ZnSnS4 solar cells by interface reaction route controlling and self-organized nanopattern at the back contact

    Fangyang Liu;Jialiang Huang;Kaiwen Sun;Chang Yan

  • Sulfur vacancy engineering of MoS2 via phosphorus incorporation for improved electrocatalytic N2 reduction to NH3

    Hao Fei;Ting Guo;Yue Xin;Liangbing Wang;Liangbing Wang

  • Boosting Cu2ZnSnS4 solar cells efficiency by a thin Ag intermediate layer between absorber and back contact

    Hongtao Cui;Xiaolei Liu;Fangyang Liu;Xiaojing Hao

  • Nanoscale Microstructure and Chemistry of Cu2ZnSnS4/CdS Interface in Kesterite Cu2ZnSnS4 Solar Cells

    Fangyang Liu;Chang Yan;Jialiang Huang;Kaiwen Sun

Frequent Co-Authors

Yanqing Lai
Yanqing Lai Central South University
Xiaojing Hao
Xiaojing Hao University of New South Wales
Chang Yan
Chang Yan University of New South Wales
Jie Li
Jie Li Central South University
Yexiang Liu
Yexiang Liu Central South University
Martin A. Green
Martin A. Green University of New South Wales
Zhian Zhang
Zhian Zhang Central South University
Liming Ding
Liming Ding National Center for Nanoscience and Technology, China
Jun Liu
Jun Liu Pacific Northwest National Laboratory
Shiyou Chen
Shiyou Chen Fudan University

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