World's Best Scientists 2026 revealed!
Charlotte Platzer-Björkman

Charlotte Platzer-Björkman

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 42 12535 12124 130 122 137 7295

Charlotte Platzer-Björkman publications per year

The chart shows the history of publications by Charlotte Platzer-Björkman between 2002 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Charlotte Platzer-Björkman published across 24 years, from 2002 to 2025, averaging 6.6 papers a year. Output peaked at 18 publications in 2017. 12 of the 159 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 2002 to 2025. Vertical axis: number of publications, 0 to 18. Peak 18 publications in 2017. 2002: 1 publication 2003: 3 publications 2004: 1 publication 2005: 2 publications 2006: 3 publications 2007: 2 publications 2008: 1 publication 2009: 5 publications 2010: 8 publications 2011: 8 publications 2012: 10 publications 2013: 10 publications 2014: 5 publications 2015: 14 publications 2016: 9 publications 2017: 18 publications 2018: 8 publications 2019: 9 publications 2020: 9 publications 2021: 6 publications 2022: 9 publications 2023: 6 publications 2024: 7 publications 2025: 5 publications
2002 2025

159 publications in total across all disciplines

View publications per year as a table
Charlotte Platzer-Björkman: publications per year, 2002 to 2025
Year Publications
2002 1
2003 3
2004 1
2005 2
2006 3
2007 2
2008 1
2009 5
2010 8
2011 8
2012 10
2013 10
2014 5
2015 14
2016 9
2017 18
2018 8
2019 9
2020 9
2021 6
2022 9
2023 6
2024 7
2025 5
Total 159
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Charlotte Platzer-Björkman publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Charlotte Platzer-Björkman sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 130–149 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 137 publications — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723 137
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Charlotte Platzer-Björkman D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Charlotte Platzer-Björkman sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 42–43 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 42 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450 42
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Charlotte Platzer-Björkman is affiliated with Uppsala University in Sweden, where their research focuses on materials science and engineering. Their work primarily involves the study and development of semiconductor materials with applications in solar energy technologies.

The scientist's research interests span several fields, including:

  • Materials Science
  • Engineering

Within these broad areas, their subfields of study include:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Biomedical Engineering

Their main topics of work cover a range of material systems and technologies, such as:

  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Copper-based nanomaterials and applications
  • Semiconductor materials and interfaces
  • Silicon and Solar Cell Technologies
  • Perovskite Materials and Applications
  • Advanced Semiconductor Detectors and Materials

Charlotte Platzer-Björkman has contributed to numerous scientific publications. Some recent papers include:

  • Thermodynamic stability, phase separation and Ag grading in (Ag,Cu)(In,Ga)Se2 solar absorbers (2020), Journal of Materials Chemistry A
  • Band Tails and Cu-Zn Disorder in Cu2ZnSnS4 Solar Cells (2020), ACS Applied Energy Materials
  • Investigation of AgGaSe2 as a Wide Gap Solar Cell Absorber (2021), ACS Applied Energy Materials
  • Advanced materials provide solutions towards a sustainable world (2024), Nature Materials
  • Experimental and Theoretical Study of Stable and Metastable Phases in Sputtered CuInS2 (2022), Advanced Science

The most frequent co-authors collaborating with Platzer-Björkman are:

  • Jan Keller
  • Natalia M. Martin
  • Jes K. Larsen
  • Marika Edoff
  • Melike Babucci

They have published extensively in a range of scientific journals, with multiple publications in:

  • ACS Applied Energy Materials
  • physica status solidi (b)
  • Solar RRL
  • Faraday Discussions
  • Journal of Materials Chemistry A

Charlotte Platzer-Björkman's research focuses on enhancing material properties and interfaces relevant to solar cell performance and sustainability. The work integrates materials chemistry with electronic engineering principles to address challenges in renewable energy technologies.

Best Publications

  • Chemical Insights into the Instability of Cu(2)ZnSnS(4) Films during Annealing

    Jonathan J. Scragg;Tove Ericson;Tomas Kubart;Marika Edoff

  • A Detrimental Reaction at the Molybdenum Back Contact in Cu2ZnSn(S,Se)4 Thin-Film Solar Cells

    Jonathan J Scragg;J Timo Wätjen;Marika Edoff;Tove Ericson

  • Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)(2) based thin film photovoltaics : Present status and current developments

    N. Naghavi;D. Abou-Ras;N. Allsop;Nicolas Barreau

  • A low-temperature order-disorder transition in Cu2ZnSnS4 thin films

    Jonathan J. S. Scragg;Léo Choubrac;Alain Lafond;Tove Ericson

  • Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient

    C. Platzer-Björkman;T. Törndahl;D. Abou-Ras;J. Malmström

  • Effects of Back Contact Instability on Cu2ZnSnS4 Devices and Processes

    Jonathan J. Scragg;Tomas Kubart;J. Timo Wätjen;Tove Ericson

  • Strong valence-band offset bowing of ZnO1-xSx enhances p-type nitrogen doping of ZnO-like alloys.

    Clas Persson;Charlotte Platzer-Björkman;Jonas Malmström;Tobias Törndahl

  • Influence of precursor sulfur content on film formation and compositional changes in Cu2ZnSnS4 films and solar cells

    Charlotte Platzer-Björkman;Jonathan Scragg;H Flammersberger;Tomas Kubart

  • Inline Cu(In,Ga)Se $_{2}$ Co-evaporation for High-Efficiency Solar Cells and Modules

    J. Lindahl;U. Zimmermann;P. Szaniawski;T. Torndahl

  • Atomic layer deposition of Zn1−xMgxO buffer layers for Cu(In,Ga)Se2 solar cells

    Tobias Törndahl;Charlotte Platzer-Björkman;John Kessler;Marika Edoff

  • Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cells

    Jonathan J. Scragg;Tove Ericson;Xavier Fontané;Victor Izquierdo‐Roca

  • A new thin film photochromic material: Oxygen-containing yttrium hydride

    Trygve Mongstad;Charlotte Platzer-Björkman;Jan Petter Mæhlen;Lennard P.A. Mooij

  • Reduced interface recombination in Cu2ZnSnS4 solar cells with atomic layer deposition Zn1−xSnxOy buffer layers

    Charlotte Platzer-Björkman;Christoper Frisk;Jes Larsen;Tove Ericson

  • Direct evidence of current blocking by ZnSe in Cu2ZnSnSe4 solar cells

    Jörn Timo Wätjen;Jessica Engman;Marika Edoff;Charlotte Platzer-Björkman

  • Zn(O, S) Buffer Layers and Thickness Variations of CdS Buffer for Cu $_{2}$ ZnSnS $_{4}$ Solar Cells

    Tove Ericson;Jonathan J. Scragg;Adam Hultqvist;Jorn Timo Watjen

  • Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models

    C Frisk;C Platzer-Björkman;J Olsson;P Szaniawski

  • Interface study of CuInSe2/ZnO and Cu(In,Ga)Se2/ZnO devices using ALD ZnO buffer layers

    Charlotte Platzer-Björkman;Jun Lu;John Kessler;Lars Stolt

  • Baseline model of graded-absorber Cu(In,Ga)Se2 solar cells applied to cells with Zn1 − xMgxO buffer layers

    Jonas Pettersson;Charlotte Platzer-Björkman;Uwe Zimmermann;Marika Edoff

  • Back and front contacts in kesterite solar cells: state-of-the-art and open questions

    Charlotte Platzer-Björkman;Nicolas Barreau;Marcus Bär;Leo Choubrac

  • Cadmium Free Cu2ZnSnS4 Solar Cells with 9.7% Efficiency

    Jes K. Larsen;Frederik Larsson;Tobias Torndahl;Nishant Saini

  • Atomic Layer Deposition of Cubic and Orthorhombic Phase Tin Monosulfide

    Oleksandr V. Bilousov;Yi Ren;Tobias Törndahl;Olivier Donzel-Gargand

Frequent Co-Authors

Marika Edoff
Marika Edoff Uppsala University
Clas Persson
Clas Persson University of Oslo
Bjørn C. Hauback
Bjørn C. Hauback University of Oslo
Susanne Siebentritt
Susanne Siebentritt University of Luxembourg
Daniel Abou-Ras
Daniel Abou-Ras Helmholtz-Zentrum Berlin für Materialien und Energie
Clemens Heske
Clemens Heske University of Nevada, Las Vegas
Ole Hansen
Ole Hansen Technical University of Denmark
Sascha Sadewasser
Sascha Sadewasser International Iberian Nanotechnology Laboratory
Alejandro Pérez-Rodríguez
Alejandro Pérez-Rodríguez University of Barcelona
Daniel Lincot
Daniel Lincot Centre national de la recherche scientifique, CNRS

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