World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
45
Citations
7053
World Ranking
11791
National Ranking
344

Chang Yan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Chang Yan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 106 publications — 4th percentile

4% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Chang Yan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Chang Yan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Chang Yan is affiliated with the University of New South Wales in Australia and conducts research primarily in materials science and engineering. Their work focuses extensively on materials chemistry and electrical and electronic engineering, with additional contributions to atomic and molecular physics, optics, polymers, plastics, and organic chemistry.

The main topics of Chang Yan's research include:

  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Copper-based Nanomaterials and Applications
  • Semiconductor Materials and Interfaces
  • Perovskite Materials and Applications
  • Conducting Polymers and Applications
  • Phase-change Materials and Chalcogenides

Their recent publications demonstrate a focus on kesterite and copper-based semiconductor materials, particularly investigating thin-film solar cells and efficiency improvements. Notable papers include:

  • Device Postannealing Enabling over 12% Efficient Solution-Processed Cu2ZnSnS4 Solar Cells with Cd2+ Substitution, 2020, Advanced Materials
  • Kesterite Solar Cells: Insights into Current Strategies and Challenges, 2021, Advanced Science
  • Cadmium-Free Kesterite Thin-Film Solar Cells with High Efficiency Approaching 12%, 2023, Advanced Science
  • Unveiling the Selenization Reaction Mechanisms in Ambient Air-Processed Highly Efficient Kesterite Solar Cells, 2023, Advanced Energy Materials
  • High Efficiency Cu2ZnSn(S,Se)4 Solar Cells with Shallow LiZn Acceptor Defects Enabled by Solution-Based Li Post-Deposition Treatment, 2021, Advanced Energy Materials

Chang Yan has published extensively in several venues related to advanced materials and energy research. Frequent publication outlets include:

  • Advanced Functional Materials
  • Solar RRL
  • Advanced Materials
  • Advanced Science
  • Advanced Energy Materials

Their collaborative work often involves coauthors such as Xiaojing Hao, Kaiwen Sun, Jialiang Huang, Jianjun Li, and Martin A. Green, reflecting a research network engaged in materials and solar cell technologies.

Overall, Chang Yan's research contributes to understanding and improving copper-based semiconductor materials and thin-film solar cells, exploring synthesis, processing, and efficiency optimization within the broader context of materials chemistry and electrical engineering.

Best Publications

  • Cu 2 ZnSnS 4 solar cells with over 10% power conversion efficiency enabled by heterojunction heat treatment

    Chang Yan;Jialiang Huang;Kaiwen Sun;Steve Johnston

  • Over 9% Efficient Kesterite Cu2ZnSnS4 Solar Cell Fabricated by Using Zn1–xCdxS Buffer Layer

    Kaiwen Sun;Chang Yan;Fangyang Liu;Fangyang Liu;Jialiang Huang

  • Beyond 11% Efficient Sulfide Kesterite Cu2ZnxCd1–xSnS4 Solar Cell: Effects of Cadmium Alloying

    Chang Yan;Kaiwen Sun;Jialiang Huang;Steve Johnston

  • Device Postannealing Enabling over 12% Efficient Solution‐Processed Cu 2 ZnSnS 4 Solar Cells with Cd 2+ Substitution

    Zhenghua Su;Guangxing Liang;Ping Fan;Jingting Luo

  • In situ growth of Cu2ZnSnS4 thin films by reactive magnetron co-sputtering

    Fangyang Liu;Yi Li;Kun Zhang;Bo Wang

  • Band alignments of different buffer layers (CdS, Zn(O,S), and In2S3) on Cu2ZnSnS4

    Chang Yan;Fangyang Liu;Ning Song;Boon K. Ng

  • Enhancing the Cu2ZnSnS4 solar cell efficiency by back contact modification: Inserting a thin TiB2 intermediate layer at Cu2ZnSnS4/Mo interface

    Fangyang Liu;Kaiwen Sun;Wei Li;Chang Yan

  • Kesterite Solar Cells: Insights into Current Strategies and Challenges.

    Mingrui He;Chang Yan;Jianjun Li;Mahesh P. Suryawanshi

  • Synthesis and characterizations of quaternary Cu2FeSnS4 nanocrystals

    Chang Yan;Chun Huang;Jia Yang;Fangyang Liu

  • Nitrogen-doped graphene quantum dots for 80% photoluminescence quantum yield for inorganic γ-CsPbI3 perovskite solar cells with efficiency beyond 16%

    Hui Bian;Qian Wang;Siwei Yang;Changjie Yan

  • Cd-Free Cu2ZnSnS4 solar cell with an efficiency greater than 10% enabled by Al2O3 passivation layers

    Xin Cui;Kaiwen Sun;Jialiang Huang;Jae S. Yun

  • Beyond 8% ultrathin kesterite Cu2ZnSnS4 solar cells by interface reaction route controlling and self-organized nanopattern at the back contact

    Fangyang Liu;Jialiang Huang;Kaiwen Sun;Chang Yan

  • Boosting Cu2ZnSnS4 solar cells efficiency by a thin Ag intermediate layer between absorber and back contact

    Hongtao Cui;Xiaolei Liu;Fangyang Liu;Xiaojing Hao

  • Nanoscale Microstructure and Chemistry of Cu2ZnSnS4/CdS Interface in Kesterite Cu2ZnSnS4 Solar Cells

    Fangyang Liu;Chang Yan;Jialiang Huang;Kaiwen Sun

  • Effects of potassium doping on solution processed kesterite Cu2ZnSnS4 thin film solar cells

    Zhengfu Tong;Chang Yan;Zhenghua Su;Fangqin Zeng

  • Boosting the efficiency of pure sulfide CZTS solar cells using the In/Cd-based hybrid buffers

    Chang Yan;Fangyang Liu;Kaiwen Sun;Ning Song

  • Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

    Andrea Carlo Cazzaniga;Andrea Crovetto;Chang Yan;Kaiwen Sun

  • Achieving high-performance PbS quantum dot solar cells by improving hole extraction through Ag doping

    Long Hu;Zhilong Zhang;Robert J. Patterson;Yicong Hu

  • Improvement of J(sc) in a Cu2ZnSnS4 Solar Cell by Using a Thin Carbon Intermediate Layer at the Cu2ZnSnS4/Mo Interface.

    Fangzhou Zhou;Fangqin Zeng;Xu Liu;Fangyang Liu

  • Kesterite Cu2ZnSnS4 thin film solar cells by a facile DMF-based solution coating process

    Fangyang Liu;Fangyang Liu;Shanshan Shen;Fangzhou Zhou;Ning Song

  • The effect of ZnS segregation on Zn-rich CZTS thin film solar cells

    Wei Li;Jian Chen;Chang Yan;Xiaojing Hao

Frequent Co-Authors

Fangyang Liu
Fangyang Liu Central South University
Xiaojing Hao
Xiaojing Hao University of New South Wales
Martin A. Green
Martin A. Green University of New South Wales
Yanqing Lai
Yanqing Lai Central South University
Yexiang Liu
Yexiang Liu Central South University
Jie Li
Jie Li Central South University
Jianjun Li
Jianjun Li Chinese Academy of Sciences
Ole Hansen
Ole Hansen Technical University of Denmark
Shujuan Huang
Shujuan Huang Macquarie University
Jan Seidel
Jan Seidel University of New South Wales

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