World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
91
Citations
27596
World Ranking
1630
National Ranking
69

David O. Scanlon publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where David O. Scanlon sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 439 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

David O. Scanlon D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where David O. Scanlon sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 91 D-Index — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

David O. Scanlon is affiliated with University College London in the United Kingdom. Their research spans primarily materials science and engineering, with a particular focus on materials chemistry and electrical and electronic engineering.

Their scientific contributions include work in the fields of electronic, optical, and magnetic materials, condensed matter physics, and inorganic chemistry.

Main topics of their research encompass:

  • Chalcogenide semiconductor thin films
  • Perovskite materials and applications
  • Advancements in battery materials
  • Electronic and structural properties of oxides
  • Advanced battery materials and technologies
  • Quantum dots synthesis and properties
  • Machine learning in materials science

Their most frequently published venues are:

  • Zenodo (CERN European Organization for Nuclear Research)
  • Journal of Materials Chemistry A
  • Chemistry of Materials
  • The Cambridge Structural Database
  • arXiv (Cornell University)

Frequent co-authors include:

  • Seán R. Kavanagh
  • Aron Walsh
  • Christopher N. Savory
  • Bonan Zhu
  • Alexander G. Squires

Examples of recent publications authored or co-authored by David O. Scanlon include:

  • 2021 roadmap for sodium-ion batteries, 2021, Journal of Physics Energy
  • Cation disorder engineering yields AgBiS2 nanocrystals with enhanced optical absorption for efficient ultrathin solar cells, 2022, Nature Photonics
  • Perovskite-inspired materials for photovoltaics and beyond-from design to devices, 2020, Nanotechnology
  • Enhanced Photocatalytic and Antibacterial Ability of Cu-Doped Anatase TiO2 Thin Films: Theory and Experiment, 2020, ACS Applied Materials & Interfaces
  • Colloidal Synthesis and Optical Properties of Perovskite-Inspired Cesium Zirconium Halide Nanocrystals, 2020, ACS Materials Letters

Best Publications

  • Band alignment of rutile and anatase TiO2

    David O. Scanlon;Charles W. Dunnill;John Buckeridge;Stephen A. Shevlin

  • On the application of the tolerance factor to inorganic and hybrid halide perovskites: a revised system

    Will Travis;Emily Nicola Kate Glover;Hugo Bronstein;David O. Scanlon

  • Theoretical and Experimental Study of the Electronic Structures of MoO3 and MoO2

    David O. Scanlon;Graeme W. Watson;D. J. Payne;G. R. Atkinson

  • Self‐Regulation Mechanism for Charged Point Defects in Hybrid Halide Perovskites

    Aron Walsh;David O. Scanlon;Shiyou Chen;Xingao Gong

  • Defect Tolerance to Intolerance in the Vacancy-Ordered Double Perovskite Semiconductors Cs2SnI6 and Cs2TeI6

    Annalise E. Maughan;Alex M. Ganose;Mitchell M. Bordelon;Elisa M. Miller

  • Can Pb-Free Halide Double Perovskites Support High-Efficiency Solar Cells?

    Christopher N. Savory;Aron Walsh;David O. Scanlon

  • sumo: Command-line tools for plotting and analysis of periodic *ab initio* calculations

    Alex M. Ganose;Adam J. Jackson;David O. Scanlon

  • Beyond methylammonium lead iodide: prospects for the emergent field of ns2 containing solar absorbers

    Alex M. Ganose;Christopher N. Savory;David O. Scanlon

  • n-Type doped transparent conducting binary oxides: an overview

    Sebastian C. Dixon;David O. Scanlon;Claire J. Carmalt;Ivan P. Parkin

  • Interplay of orbital and relativistic effects in bismuth oxyhalides: BiOF, BiOCl, BiOBr, and BiOI

    Alex M. Ganose;Madeleine Cuff;Keith T. Butler;Aron Walsh

  • Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti‐Site Defects

    David O. Scanlon;P. D. C. King;R. P. Singh;A. de la Torre

  • Acceptor Levels in p-Type Cu2O: Rationalizing Theory and Experiment

    David O. Scanlon;Benjamin J. Morgan;Graeme W. Watson;Aron Walsh

  • Bismuth oxyhalides: synthesis, structure and photoelectrochemical activity

    Davinder S. Bhachu;Savio J. A. Moniz;Sanjayan Sathasivam;David O. Scanlon

  • Cation disorder engineering yields AgBiS2 nanocrystals with enhanced optical absorption for efficient ultrathin solar cells

    Unknown

  • An ab initio Study of Reduction of V2O5 through the Formation of Oxygen Vacancies and Li Intercalation

    David O. Scanlon;Aron Walsh;Benjamin J. Morgan;Graeme W. Watson

  • Band gap and work function tailoring of SnO2 for improved transparent conducting ability in photovoltaics

    Alex M. Ganose;David O. Scanlon

  • Understanding the p-type defect chemistry of CuCrO2

    David O. Scanlon;Graeme W. Watson

  • Perspectives and Design Principles of Vacancy-Ordered Double Perovskite Halide Semiconductors

    Annalise E. Maughan;Alex M. Ganose;David O. Scanlon;James R. Neilson

  • 2021 roadmap for sodium-ion batteries

    Nuria Tapia-Ruiz;A. Robert Armstrong;Hande Alptekin;Marco A. Amores

  • Role of Lattice Distortions in the Oxygen Storage Capacity of Divalently Doped CeO2

    Aoife B. Kehoe;David O. Scanlon;Graeme W. Watson

  • Defect engineering of BaSnO 3 for high-performance transparent conducting oxide applications

    David O. Scanlon

  • Sources of conductivity and doping limits in CdO from hybrid density functional theory.

    Mario Burbano;David O. Scanlon;Graeme W. Watson

  • On the possibility of p-type SnO2

    David O. Scanlon;Graeme W. Watson

Frequent Co-Authors

Graeme W. Watson
Graeme W. Watson Trinity College Dublin
Aron Walsh
Aron Walsh Imperial College London
Alexey A. Sokol
Alexey A. Sokol University College London
Ivan P. Parkin
Ivan P. Parkin University College London
Tim D. Veal
Tim D. Veal University of Liverpool
Louis F. J. Piper
Louis F. J. Piper University of Warwick
Claire J. Carmalt
Claire J. Carmalt University College London
Robert G. Palgrave
Robert G. Palgrave University College London
David J. Payne
David J. Payne Imperial College London
Nora H. de Leeuw
Nora H. de Leeuw University of Leeds

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