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Materials Science

D-Index
62
Citations
10444
World Ranking
6617
National Ranking
258

Overview

Tim D. Veal is affiliated with the University of Liverpool in the United Kingdom, focusing on research in materials science and engineering. Their work spans several subfields, including materials chemistry, electrical and electronic engineering, and electronic, optical, and magnetic materials. The topics covered in their research reflect a concentration on chalcogenide semiconductor thin films, quantum dots synthesis and properties, advanced semiconductor detectors and materials, ZnO doping and properties, phase-change materials and chalcogenides, electronic and structural properties of oxides, and the application of machine learning in materials science.

Veal has published extensively across multiple scientific journals, with frequent contributions to:

  • Chemistry of Materials
  • Journal of Physics Energy
  • Journal of Materials Chemistry A
  • ACS Applied Materials & Interfaces
  • The Journal of Physical Chemistry C

Recent notable papers include:

  • Identifying Raman modes of Sb2Se3 and their symmetries using angle-resolved polarised Raman spectra (2020, Journal of Materials Chemistry A)
  • Isotype Heterojunction Solar Cells Using n-Type Sb2Se3 Thin Films (2020, Chemistry of Materials)
  • Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors (2021, ACS Applied Materials & Interfaces)
  • Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cells (2020, ACS Applied Energy Materials)
  • Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2 (2020, Chemistry of Materials)

They often collaborate with other researchers, with frequent co-authors including Leanne A. H. Jones, Matthew J. Smiles, P. Thakur, Jack E. N. Swallow, and Jonathan D. Major. These collaborations underline the interdisciplinary nature of their research projects and the integration of materials chemistry with applied engineering approaches.

Their main fields of study emphasize the intersection of materials science and engineering, with particular focus on developing and characterizing new semiconductor materials and thin film technologies relevant to energy and electronic applications. The combination of work on chalcogenide semiconductor thin films, optical and electronic materials, and machine learning points to a broad and evolving research portfolio aimed at advancing understanding and applications of novel materials.

Best Publications

  • Intrinsic electron accumulation at clean InN surfaces.

    I Mahboob;TD Veal;Christopher F McConville;H Lu

  • Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3

    P. D. C. King;T. D. Veal;F. Fuchs;Ch. Y. Wang

  • Conductivity in transparent oxide semiconductors

    P D C King;T D Veal

  • Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst

    Lee A. Burton;Thomas J. Whittles;David Hesp;Wojciech M. Linhart

  • Origin of electron accumulation at wurtzite InN surfaces

    I Mahboob;TD Veal;Lfj Piper;Christopher F McConville

  • Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory

    Thomas J. Whittles;Lee A. Burton;Jonathan M. Skelton;Aron Walsh

  • Surface electron accumulation and the charge neutrality level in In2O3.

    Pdc King;TD Veal;DJ Payne;A Bourlange

  • Bandgap and effective mass of epitaxial cadmium oxide

    Paul Harvey Jefferson;S. A. Hatfield;T. D. Veal;Philip David King

  • Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

    P. D. C. King;T. D. Veal;A. Schleife;J. Zúñiga-Pérez

  • Shallow donor state of hydrogen in In 2 O 3 and SnO 2 : Implications for conductivity in transparent conducting oxides

    Pdc King;RL Lichti;YG Celebi;JM Gil

  • InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

    Pdc King;TD Veal;CE Kendrick;LR Bailey

  • Origin of the n-type conductivity of InN: the role of positively charged dislocations

    L. F. J. Piper;T. D. Veal;C. F. McConville;H. Lu

  • Growth, disorder, and physical properties of ZnSnN2

    N. Feldberg;J. D. Aldous;W. M. Linhart;L. J. Phillips

  • Bulk transport measurements in ZnO: the effect of surface electron layers

    MW Allen;CH Swartz;TH Myers;TH Myers;TD Veal

  • Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

    Pdc King;TD Veal;PH Jefferson;SA Hatfield

  • Self‐Compensation in Transparent Conducting F‐Doped SnO2

    Jack E. N. Swallow;Benjamin A. D. Williamson;Thomas J. Whittles;Max Birkett

  • Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy.

    Leyla Colakerol;TD Veal;Hae-Kyung Jeong;Lukasz Plucinski

  • Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber

    Tim D. Veal;Nathaniel Feldberg;Nicholas F. Quackenbush;Wojciech M. Linhart

  • Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

    Philip David King;T. D. Veal;Paul Harvey Jefferson;C. F. McConville

  • Surface band-gap narrowing in quantized electron accumulation layers.

    P. D. C. King;T. D. Veal;C. F. McConville;J. Zúñiga-Pérez

  • Transition from electron accumulation to depletion at InGaN surfaces

    T. D. Veal;Paul Harvey Jefferson;L. F. J. Piper;C. F. McConville

  • Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

    Philip David King;T. D. Veal;C. F. McConville;Frank Fuchs

  • Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

    P. D. C. King;T. D. Veal;P. H. Jefferson;J. Zúñiga-Pérez

  • Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

    T. D. Veal;Philip David King;S. A. Hatfield;L. R. Bailey

Frequent Co-Authors

Christopher McConville
Christopher McConville Deakin University
William J. Schaff
William J. Schaff Cornell University
David O. Scanlon
David O. Scanlon University College London
Louis F. J. Piper
Louis F. J. Piper University of Warwick
Friedhelm Bechstedt
Friedhelm Bechstedt Friedrich Schiller University Jena
Pam A. Thomas
Pam A. Thomas University of Warwick
Kin Man Yu
Kin Man Yu City University of Hong Kong
Aron Walsh
Aron Walsh Imperial College London
Mark Hopkinson
Mark Hopkinson University of Sheffield
Ana M. Sanchez
Ana M. Sanchez University of Warwick

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