Tim D. Veal mainly focuses on Condensed matter physics, Band gap, Photoemission spectroscopy, Inverse photoemission spectroscopy and Angle-resolved photoemission spectroscopy. The Condensed matter physics study combines topics in areas such as Surface states, Fermi level and Wurtzite crystal structure. His Band gap research is multidisciplinary, relying on both Molecular beam epitaxy, Heterojunction and Analytical chemistry.
His Photoemission spectroscopy research is multidisciplinary, incorporating perspectives in Layer, Semiconductor and Atomic physics. As a part of the same scientific family, Tim D. Veal mostly works in the field of Semiconductor, focusing on Single crystal and, on occasion, Work function, Physical chemistry and Electron affinity. His Wide-bandgap semiconductor study incorporates themes from Stoichiometry, Composition dependence, Epitaxy and Conductivity.
Condensed matter physics, Band gap, Analytical chemistry, Photoemission spectroscopy and Molecular beam epitaxy are his primary areas of study. He combines subjects such as Hall effect and Semiconductor with his study of Condensed matter physics. His Band gap research includes themes of Effective mass, Photoluminescence and Infrared spectroscopy.
His research in Analytical chemistry intersects with topics in High resolution electron energy loss spectroscopy, Annealing, Passivation and Lattice constant. His research integrates issues of Fermi level, Angle-resolved photoemission spectroscopy, Density of states, Atomic physics and Wurtzite crystal structure in his study of Photoemission spectroscopy. His Molecular beam epitaxy study integrates concerns from other disciplines, such as X-ray crystallography, Diffraction, Thin film and Crystallography.
His primary areas of study are Optoelectronics, Band gap, Molecular physics, Condensed matter physics and Doping. His study in the fields of Semiconductor and Indium under the domain of Optoelectronics overlaps with other disciplines such as Photovoltaics. His Band gap study combines topics from a wide range of disciplines, such as Density of states, Electronic band structure and Absorption spectroscopy.
His work carried out in the field of Molecular physics brings together such families of science as Fermi level, Absorption, Photoemission spectroscopy and Antimony. His study in Molecular beam epitaxy extends to Condensed matter physics with its themes. Tim D. Veal interconnects Secondary ion mass spectrometry, Deposition and Conductivity in the investigation of issues within Doping.
Tim D. Veal focuses on Band gap, Doping, Molecular physics, Photovoltaics and Secondary ion mass spectrometry. His Band gap study results in a more complete grasp of Condensed matter physics. His biological study spans a wide range of topics, including Sublimation and Scanning electron microscope.
Tim D. Veal has included themes like Transparent conducting film, Thin film and Conductivity in his Doping study. His study in Molecular physics is interdisciplinary in nature, drawing from both Fermi level, Photoemission spectroscopy and Absorption spectroscopy. His study explores the link between Secondary ion mass spectrometry and topics such as Surface photovoltage that cross with problems in Analytical chemistry and Heterojunction.
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Intrinsic electron accumulation at clean InN surfaces.
I Mahboob;TD Veal;Christopher F McConville;H Lu.
Physical Review Letters (2004)
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3
P. D. C. King;T. D. Veal;F. Fuchs;Ch. Y. Wang.
Physical Review B (2009)
Conductivity in transparent oxide semiconductors
P D C King;T D Veal.
Journal of Physics: Condensed Matter (2011)
Origin of electron accumulation at wurtzite InN surfaces
I Mahboob;TD Veal;Lfj Piper;Christopher F McConville.
Physical Review B (2004)
Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst
Lee A. Burton;Thomas J. Whittles;David Hesp;Wojciech M. Linhart.
Journal of Materials Chemistry (2016)
Surface electron accumulation and the charge neutrality level in In2O3.
Pdc King;TD Veal;DJ Payne;A Bourlange.
Physical Review Letters (2008)
Bandgap and effective mass of epitaxial cadmium oxide
Paul Harvey Jefferson;S. A. Hatfield;T. D. Veal;Philip David King.
Applied Physics Letters (2008)
Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory
Thomas J. Whittles;Lee A. Burton;Jonathan M. Skelton;Aron Walsh.
Chemistry of Materials (2016)
Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations
P. D. C. King;T. D. Veal;A. Schleife;J. Zúñiga-Pérez.
Physical Review B (2009)
Shallow donor state of hydrogen in In 2 O 3 and SnO 2 : Implications for conductivity in transparent conducting oxides
Pdc King;RL Lichti;YG Celebi;JM Gil.
Physical Review B (2009)
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