D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 48 Citations 6,851 152 World Ranking 7677 National Ranking 328

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Condensed matter physics
  • Band gap

Tim D. Veal mainly focuses on Condensed matter physics, Band gap, Photoemission spectroscopy, Inverse photoemission spectroscopy and Angle-resolved photoemission spectroscopy. The Condensed matter physics study combines topics in areas such as Surface states, Fermi level and Wurtzite crystal structure. His Band gap research is multidisciplinary, relying on both Molecular beam epitaxy, Heterojunction and Analytical chemistry.

His Photoemission spectroscopy research is multidisciplinary, incorporating perspectives in Layer, Semiconductor and Atomic physics. As a part of the same scientific family, Tim D. Veal mostly works in the field of Semiconductor, focusing on Single crystal and, on occasion, Work function, Physical chemistry and Electron affinity. His Wide-bandgap semiconductor study incorporates themes from Stoichiometry, Composition dependence, Epitaxy and Conductivity.

His most cited work include:

  • Intrinsic electron accumulation at clean InN surfaces. (427 citations)
  • Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3 (292 citations)
  • Origin of electron accumulation at wurtzite InN surfaces (187 citations)

What are the main themes of his work throughout his whole career to date?

Condensed matter physics, Band gap, Analytical chemistry, Photoemission spectroscopy and Molecular beam epitaxy are his primary areas of study. He combines subjects such as Hall effect and Semiconductor with his study of Condensed matter physics. His Band gap research includes themes of Effective mass, Photoluminescence and Infrared spectroscopy.

His research in Analytical chemistry intersects with topics in High resolution electron energy loss spectroscopy, Annealing, Passivation and Lattice constant. His research integrates issues of Fermi level, Angle-resolved photoemission spectroscopy, Density of states, Atomic physics and Wurtzite crystal structure in his study of Photoemission spectroscopy. His Molecular beam epitaxy study integrates concerns from other disciplines, such as X-ray crystallography, Diffraction, Thin film and Crystallography.

He most often published in these fields:

  • Condensed matter physics (37.99%)
  • Band gap (34.08%)
  • Analytical chemistry (25.14%)

What were the highlights of his more recent work (between 2016-2021)?

  • Optoelectronics (16.20%)
  • Band gap (34.08%)
  • Molecular physics (7.26%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Band gap, Molecular physics, Condensed matter physics and Doping. His study in the fields of Semiconductor and Indium under the domain of Optoelectronics overlaps with other disciplines such as Photovoltaics. His Band gap study combines topics from a wide range of disciplines, such as Density of states, Electronic band structure and Absorption spectroscopy.

His work carried out in the field of Molecular physics brings together such families of science as Fermi level, Absorption, Photoemission spectroscopy and Antimony. His study in Molecular beam epitaxy extends to Condensed matter physics with its themes. Tim D. Veal interconnects Secondary ion mass spectrometry, Deposition and Conductivity in the investigation of issues within Doping.

Between 2016 and 2021, his most popular works were:

  • Self‐Compensation in Transparent Conducting F‐Doped SnO2 (36 citations)
  • Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance (26 citations)
  • Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications. (23 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Band gap
  • Condensed matter physics

Tim D. Veal focuses on Band gap, Doping, Molecular physics, Photovoltaics and Secondary ion mass spectrometry. His Band gap study results in a more complete grasp of Condensed matter physics. His biological study spans a wide range of topics, including Sublimation and Scanning electron microscope.

Tim D. Veal has included themes like Transparent conducting film, Thin film and Conductivity in his Doping study. His study in Molecular physics is interdisciplinary in nature, drawing from both Fermi level, Photoemission spectroscopy and Absorption spectroscopy. His study explores the link between Secondary ion mass spectrometry and topics such as Surface photovoltage that cross with problems in Analytical chemistry and Heterojunction.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Intrinsic electron accumulation at clean InN surfaces.

I Mahboob;TD Veal;Christopher F McConville;H Lu.
Physical Review Letters (2004)

592 Citations

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3

P. D. C. King;T. D. Veal;F. Fuchs;Ch. Y. Wang.
Physical Review B (2009)

332 Citations

Conductivity in transparent oxide semiconductors

P D C King;T D Veal.
Journal of Physics: Condensed Matter (2011)

303 Citations

Origin of electron accumulation at wurtzite InN surfaces

I Mahboob;TD Veal;Lfj Piper;Christopher F McConville.
Physical Review B (2004)

247 Citations

Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst

Lee A. Burton;Thomas J. Whittles;David Hesp;Wojciech M. Linhart.
Journal of Materials Chemistry (2016)

228 Citations

Surface electron accumulation and the charge neutrality level in In2O3.

Pdc King;TD Veal;DJ Payne;A Bourlange.
Physical Review Letters (2008)

212 Citations

Bandgap and effective mass of epitaxial cadmium oxide

Paul Harvey Jefferson;S. A. Hatfield;T. D. Veal;Philip David King.
Applied Physics Letters (2008)

195 Citations

Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory

Thomas J. Whittles;Lee A. Burton;Jonathan M. Skelton;Aron Walsh.
Chemistry of Materials (2016)

161 Citations

Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

P. D. C. King;T. D. Veal;A. Schleife;J. Zúñiga-Pérez.
Physical Review B (2009)

159 Citations

Shallow donor state of hydrogen in In 2 O 3 and SnO 2 : Implications for conductivity in transparent conducting oxides

Pdc King;RL Lichti;YG Celebi;JM Gil.
Physical Review B (2009)

149 Citations

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