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D-Index & Metrics

Materials Science

D-Index
62
Citations
10444
World Ranking
6615
National Ranking
258

Tim D. Veal publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tim D. Veal sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 196 publications — 29th percentile

29% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Tim D. Veal D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tim D. Veal sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 62 D-Index — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Tim D. Veal is affiliated with the University of Liverpool in the United Kingdom, focusing on research in materials science and engineering. Their work spans several subfields, including materials chemistry, electrical and electronic engineering, and electronic, optical, and magnetic materials. The topics covered in their research reflect a concentration on chalcogenide semiconductor thin films, quantum dots synthesis and properties, advanced semiconductor detectors and materials, ZnO doping and properties, phase-change materials and chalcogenides, electronic and structural properties of oxides, and the application of machine learning in materials science.

Veal has published extensively across multiple scientific journals, with frequent contributions to:

  • Chemistry of Materials
  • Journal of Physics Energy
  • Journal of Materials Chemistry A
  • ACS Applied Materials & Interfaces
  • The Journal of Physical Chemistry C

Recent notable papers include:

  • Identifying Raman modes of Sb2Se3 and their symmetries using angle-resolved polarised Raman spectra (2020, Journal of Materials Chemistry A)
  • Isotype Heterojunction Solar Cells Using n-Type Sb2Se3 Thin Films (2020, Chemistry of Materials)
  • Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors (2021, ACS Applied Materials & Interfaces)
  • Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cells (2020, ACS Applied Energy Materials)
  • Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2 (2020, Chemistry of Materials)

They often collaborate with other researchers, with frequent co-authors including Leanne A. H. Jones, Matthew J. Smiles, P. Thakur, Jack E. N. Swallow, and Jonathan D. Major. These collaborations underline the interdisciplinary nature of their research projects and the integration of materials chemistry with applied engineering approaches.

Their main fields of study emphasize the intersection of materials science and engineering, with particular focus on developing and characterizing new semiconductor materials and thin film technologies relevant to energy and electronic applications. The combination of work on chalcogenide semiconductor thin films, optical and electronic materials, and machine learning points to a broad and evolving research portfolio aimed at advancing understanding and applications of novel materials.

Best Publications

  • Intrinsic electron accumulation at clean InN surfaces.

    I Mahboob;TD Veal;Christopher F McConville;H Lu

  • Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3

    P. D. C. King;T. D. Veal;F. Fuchs;Ch. Y. Wang

  • Conductivity in transparent oxide semiconductors

    P D C King;T D Veal

  • Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst

    Lee A. Burton;Thomas J. Whittles;David Hesp;Wojciech M. Linhart

  • Origin of electron accumulation at wurtzite InN surfaces

    I Mahboob;TD Veal;Lfj Piper;Christopher F McConville

  • Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory

    Thomas J. Whittles;Lee A. Burton;Jonathan M. Skelton;Aron Walsh

  • Surface electron accumulation and the charge neutrality level in In2O3.

    Pdc King;TD Veal;DJ Payne;A Bourlange

  • Bandgap and effective mass of epitaxial cadmium oxide

    Paul Harvey Jefferson;S. A. Hatfield;T. D. Veal;Philip David King

  • Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

    P. D. C. King;T. D. Veal;A. Schleife;J. Zúñiga-Pérez

  • Shallow donor state of hydrogen in In 2 O 3 and SnO 2 : Implications for conductivity in transparent conducting oxides

    Pdc King;RL Lichti;YG Celebi;JM Gil

  • InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

    Pdc King;TD Veal;CE Kendrick;LR Bailey

  • Origin of the n-type conductivity of InN: the role of positively charged dislocations

    L. F. J. Piper;T. D. Veal;C. F. McConville;H. Lu

  • Growth, disorder, and physical properties of ZnSnN2

    N. Feldberg;J. D. Aldous;W. M. Linhart;L. J. Phillips

  • Bulk transport measurements in ZnO: the effect of surface electron layers

    MW Allen;CH Swartz;TH Myers;TH Myers;TD Veal

  • Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

    Pdc King;TD Veal;PH Jefferson;SA Hatfield

  • Self‐Compensation in Transparent Conducting F‐Doped SnO2

    Jack E. N. Swallow;Benjamin A. D. Williamson;Thomas J. Whittles;Max Birkett

  • Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy.

    Leyla Colakerol;TD Veal;Hae-Kyung Jeong;Lukasz Plucinski

  • Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber

    Tim D. Veal;Nathaniel Feldberg;Nicholas F. Quackenbush;Wojciech M. Linhart

  • Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

    Philip David King;T. D. Veal;Paul Harvey Jefferson;C. F. McConville

  • Surface band-gap narrowing in quantized electron accumulation layers.

    P. D. C. King;T. D. Veal;C. F. McConville;J. Zúñiga-Pérez

  • Transition from electron accumulation to depletion at InGaN surfaces

    T. D. Veal;Paul Harvey Jefferson;L. F. J. Piper;C. F. McConville

  • Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

    Philip David King;T. D. Veal;C. F. McConville;Frank Fuchs

  • Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

    P. D. C. King;T. D. Veal;P. H. Jefferson;J. Zúñiga-Pérez

  • Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

    T. D. Veal;Philip David King;S. A. Hatfield;L. R. Bailey

Frequent Co-Authors

Christopher McConville
Christopher McConville Deakin University
William J. Schaff
William J. Schaff Cornell University
David O. Scanlon
David O. Scanlon University College London
Louis F. J. Piper
Louis F. J. Piper University of Warwick
Friedhelm Bechstedt
Friedhelm Bechstedt Friedrich Schiller University Jena
Pam A. Thomas
Pam A. Thomas University of Warwick
Kin Man Yu
Kin Man Yu City University of Hong Kong
Aron Walsh
Aron Walsh Imperial College London
Mark Hopkinson
Mark Hopkinson University of Sheffield
Ana M. Sanchez
Ana M. Sanchez University of Warwick

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