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Materials Science
Germany
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
81
Citations
37521
World Ranking
477
National Ranking
12

Materials Science

D-Index
83
Citations
38657
World Ranking
2311
National Ranking
130

Oliver Ambacher publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Oliver Ambacher sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 841 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Oliver Ambacher D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Oliver Ambacher sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 81 D-Index — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in Germany Leader Award

Overview

Oliver Ambacher is affiliated with the University of Freiburg in Germany. Their research focuses primarily on engineering, physics and astronomy, and materials science, with a significant emphasis on specialized subfields such as condensed matter physics, biomedical engineering, electrical and electronic engineering, mechanics of materials, and electronic, optical, and magnetic materials.

The scientist has contributed extensively to the study of GaN-based semiconductor devices and materials, acoustic wave resonator technologies, metal and thin film mechanics, as well as Ga2O3 and related materials. Other notable topics in their body of work include semiconductor materials and devices, ZnO doping and properties, and radio frequency integrated circuit design.

Oliver Ambacher's publication record includes several papers from 2021, published in reputable venues such as the Journal of Applied Physics, Applied Physics Letters, and Physical Review B. Key recent papers include:

  • Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties (2021, Journal of Applied Physics)
  • On the exceptional temperature stability of ferroelectric Al1-xScxN thin films (2021, Applied Physics Letters)
  • Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN (2021, Journal of Applied Physics)
  • First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N (2021, Physical Review B)
  • Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures (2021, Journal of Applied Physics)

Frequently publishing in the Journal of Applied Physics, Oliver Ambacher has over 20 publications there. Other significant venues for their research include Applied Physics Letters, physica status solidi (a), IEEE Transactions on Microwave Theory and Techniques, and arXiv (Cornell University).

Collaborations have involved a range of frequent coauthors, among them:

  • Lutz Kirste
  • M. Yassine
  • Mario Prescher
  • Stefano Leone
  • A. Yassine

Best Publications

  • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

    O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann

  • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

    O. Ambacher;B. Foutz;J. Smart;J. R. Shealy

  • Growth and applications of Group III-nitrides

    O Ambacher

  • Wireless sub-THz communication system with high data rate

    S. Koenig;D. Lopez-Diaz;J. Antes;J. Antes;F. Boes;F. Boes

  • Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

    O Ambacher;J Majewski;C Miskys;A Link

  • Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures

    Vincenzo Fiorentini;Fabio Bernardini;Oliver Ambacher

  • Optical constants of epitaxial AlGaN films and their temperature dependence

    D. Brunner;H. Angerer;E. Bustarret;F. Freudenberg

  • Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

    T. Metzger;R. Höpler;E. Born;O. Ambacher

  • Undoped AlGaN/GaN HEMTs for microwave power amplification

    L.F. Eastman;V. Tilak;J. Smart;B.M. Green

  • Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

    V Cimalla;J Pezoldt;O Ambacher

  • Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

    Michael K. Kelly;Robert P. Vaudo;Vivek M. Phanse;Lutz Görgens

  • Electronic components produced by a method of separating two layers of material from one another

    Michael Kelly;Oliver Ambacher;Martin Stutzmann;Martin Brandt

  • Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

    O. Ambacher;M. S. Brandt;R. Dimitrov;T. Metzger

  • Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3

    P. D. C. King;T. D. Veal;F. Fuchs;Ch. Y. Wang

  • Effects of solvent and annealing on the improved performance of solar cells based on poly(3-hexylthiophene): Fullerene

    Maher Al-Ibrahim;Oliver Ambacher;Steffi Sensfuss;Gerhard Gobsch

  • Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

    H. Angerer;D. Brunner;F. Freudenberg;O. Ambacher

  • Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements

    C. Deger;Eberhard Born;Helmut Angerer;Oliver Ambacher

  • Relation between absorption and crystallinity of poly(3-hexylthiophene)/fullerene films for plastic solar cells

    Uladzimir Zhokhavets;Tobias Erb;Gerhard Gobsch;Maher Al-Ibrahim

  • Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films

    W. Rieger;T. Metzger;H. Angerer;R. Dimitrov

  • Optical Process for Liftoff of Group III-Nitride Films

    M. K. Kelly;O. Ambacher;R. Dimitrov;R. Handschuh

Frequent Co-Authors

Martin Stutzmann
Martin Stutzmann Technical University of Munich
Michael Schlechtweg
Michael Schlechtweg Fraunhofer Institute for Applied Solid State Physics IAF
Arnulf Leuther
Arnulf Leuther Fraunhofer Society
Ingmar Kallfass
Ingmar Kallfass University of Stuttgart
Axel Tessmann
Axel Tessmann Fraunhofer Society
William J. Schaff
William J. Schaff Cornell University
Christoph E. Nebel
Christoph E. Nebel Diamond and Carbon Applications
Martin Eickhoff
Martin Eickhoff University of Bremen
Martin S. Brandt
Martin S. Brandt Technical University of Munich
Lester F. Eastman
Lester F. Eastman Cornell University

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