D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 69 Citations 28,725 732 World Ranking 536 National Ranking 12
Materials Science D-index 75 Citations 31,275 755 World Ranking 1844 National Ranking 109

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Electrical engineering

His scientific interests lie mostly in Optoelectronics, Heterojunction, Condensed matter physics, Epitaxy and Wide-bandgap semiconductor. Oliver Ambacher has included themes like Sapphire and High-electron-mobility transistor in his Optoelectronics study. His Heterojunction study incorporates themes from Ion, Nanotechnology, Field-effect transistor, Piezoelectricity and Nitride.

His studies deal with areas such as Molecular beam epitaxy, Hall effect, Wurtzite crystal structure and Polarization as well as Condensed matter physics. His research investigates the connection with Epitaxy and areas like Nucleation which intersect with concerns in Layer and Phase. His Wide-bandgap semiconductor research is multidisciplinary, relying on both Image resolution, Thermal conduction and Silicon carbide.

His most cited work include:

  • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures (2141 citations)
  • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures (1193 citations)
  • Growth and applications of Group III-nitrides (1153 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Heterojunction, High-electron-mobility transistor, Electrical engineering and Transistor. Oliver Ambacher is involved in the study of Optoelectronics that focuses on Wide-bandgap semiconductor in particular. His study in Heterojunction is interdisciplinary in nature, drawing from both Piezoelectricity, Molecular beam epitaxy and Layer, Nitride.

He has researched Electrical engineering in several fields, including Power and Electronic engineering. As part of the same scientific family, Oliver Ambacher usually focuses on Epitaxy, concentrating on Thin film and intersecting with Chemical vapor deposition. His research in Monolithic microwave integrated circuit intersects with topics in W band, Bandwidth and Integrated circuit.

He most often published in these fields:

  • Optoelectronics (52.09%)
  • Heterojunction (17.73%)
  • High-electron-mobility transistor (16.30%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (52.09%)
  • Transistor (15.20%)
  • High-electron-mobility transistor (16.30%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Optoelectronics, Transistor, High-electron-mobility transistor, Electrical engineering and Amplifier. His study in Optoelectronics is interdisciplinary in nature, drawing from both Gallium nitride, Logic gate and Voltage. He combines subjects such as Capacitor, Gate driver, Current and Analytical chemistry with his study of Transistor.

His High-electron-mobility transistor research incorporates themes from Chemical vapor deposition, Epitaxy, Heterojunction, Sheet resistance and Surface roughness. His Epitaxy research focuses on Diffraction and how it connects with Piezoelectricity. His Electrical engineering research includes elements of Power and Electronic engineering.

Between 2014 and 2021, his most popular works were:

  • ${W}$ -Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging (47 citations)
  • Electrochemical generation of hydrogenated graphene flakes (35 citations)
  • Appropriate salt concentration of nanodiamond colloids for electrostatic self-assembly seeding of monosized individual diamond nanoparticles on silicon dioxide surfaces. (30 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Optics

His primary areas of investigation include Optoelectronics, Transistor, High-electron-mobility transistor, Electrical engineering and Logic gate. Oliver Ambacher specializes in Optoelectronics, namely Integrated circuit. His High-electron-mobility transistor research is multidisciplinary, incorporating elements of Diode and Epitaxy.

Nitride is closely connected to Surface roughness in his research, which is encompassed under the umbrella topic of Epitaxy. His Electrical engineering research is multidisciplinary, relying on both Power and Electronic engineering. His work carried out in the field of Threshold voltage brings together such families of science as Wide-bandgap semiconductor, Adsorption and Analytical chemistry.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann.
Journal of Applied Physics (1999)

3284 Citations

Growth and applications of Group III-nitrides

O Ambacher.
Journal of Physics D (1998)

1993 Citations

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher;B. Foutz;J. Smart;J. R. Shealy.
Journal of Applied Physics (2000)

1872 Citations

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O Ambacher;J Majewski;C Miskys;A Link.
Journal of Physics: Condensed Matter (2002)

1276 Citations

Wireless sub-THz communication system with high data rate

S. Koenig;D. Lopez-Diaz;J. Antes;J. Antes;F. Boes;F. Boes.
Nature Photonics (2013)

1131 Citations

Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures

Vincenzo Fiorentini;Fabio Bernardini;Oliver Ambacher.
Applied Physics Letters (2002)

928 Citations

Optical constants of epitaxial AlGaN films and their temperature dependence

D. Brunner;H. Angerer;E. Bustarret;F. Freudenberg.
Journal of Applied Physics (1997)

726 Citations

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

T. Metzger;R. Höpler;E. Born;O. Ambacher.
Philosophical Magazine (1998)

686 Citations

Undoped AlGaN/GaN HEMTs for microwave power amplification

L.F. Eastman;V. Tilak;J. Smart;B.M. Green.
IEEE Transactions on Electron Devices (2001)

472 Citations

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

V Cimalla;J Pezoldt;O Ambacher.
Journal of Physics D (2007)

425 Citations

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