His scientific interests lie mostly in Optoelectronics, Heterojunction, Condensed matter physics, Epitaxy and Wide-bandgap semiconductor. Oliver Ambacher has included themes like Sapphire and High-electron-mobility transistor in his Optoelectronics study. His Heterojunction study incorporates themes from Ion, Nanotechnology, Field-effect transistor, Piezoelectricity and Nitride.
His studies deal with areas such as Molecular beam epitaxy, Hall effect, Wurtzite crystal structure and Polarization as well as Condensed matter physics. His research investigates the connection with Epitaxy and areas like Nucleation which intersect with concerns in Layer and Phase. His Wide-bandgap semiconductor research is multidisciplinary, relying on both Image resolution, Thermal conduction and Silicon carbide.
His primary areas of investigation include Optoelectronics, Heterojunction, High-electron-mobility transistor, Electrical engineering and Transistor. Oliver Ambacher is involved in the study of Optoelectronics that focuses on Wide-bandgap semiconductor in particular. His study in Heterojunction is interdisciplinary in nature, drawing from both Piezoelectricity, Molecular beam epitaxy and Layer, Nitride.
He has researched Electrical engineering in several fields, including Power and Electronic engineering. As part of the same scientific family, Oliver Ambacher usually focuses on Epitaxy, concentrating on Thin film and intersecting with Chemical vapor deposition. His research in Monolithic microwave integrated circuit intersects with topics in W band, Bandwidth and Integrated circuit.
His scientific interests lie mostly in Optoelectronics, Transistor, High-electron-mobility transistor, Electrical engineering and Amplifier. His study in Optoelectronics is interdisciplinary in nature, drawing from both Gallium nitride, Logic gate and Voltage. He combines subjects such as Capacitor, Gate driver, Current and Analytical chemistry with his study of Transistor.
His High-electron-mobility transistor research incorporates themes from Chemical vapor deposition, Epitaxy, Heterojunction, Sheet resistance and Surface roughness. His Epitaxy research focuses on Diffraction and how it connects with Piezoelectricity. His Electrical engineering research includes elements of Power and Electronic engineering.
His primary areas of investigation include Optoelectronics, Transistor, High-electron-mobility transistor, Electrical engineering and Logic gate. Oliver Ambacher specializes in Optoelectronics, namely Integrated circuit. His High-electron-mobility transistor research is multidisciplinary, incorporating elements of Diode and Epitaxy.
Nitride is closely connected to Surface roughness in his research, which is encompassed under the umbrella topic of Epitaxy. His Electrical engineering research is multidisciplinary, relying on both Power and Electronic engineering. His work carried out in the field of Threshold voltage brings together such families of science as Wide-bandgap semiconductor, Adsorption and Analytical chemistry.
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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann.
Journal of Applied Physics (1999)
Growth and applications of Group III-nitrides
Journal of Physics D (1998)
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O. Ambacher;B. Foutz;J. Smart;J. R. Shealy.
Journal of Applied Physics (2000)
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
O Ambacher;J Majewski;C Miskys;A Link.
Journal of Physics: Condensed Matter (2002)
Wireless sub-THz communication system with high data rate
S. Koenig;D. Lopez-Diaz;J. Antes;J. Antes;F. Boes;F. Boes.
Nature Photonics (2013)
Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures
Vincenzo Fiorentini;Fabio Bernardini;Oliver Ambacher.
Applied Physics Letters (2002)
Optical constants of epitaxial AlGaN films and their temperature dependence
D. Brunner;H. Angerer;E. Bustarret;F. Freudenberg.
Journal of Applied Physics (1997)
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
T. Metzger;R. Höpler;E. Born;O. Ambacher.
Philosophical Magazine (1998)
Undoped AlGaN/GaN HEMTs for microwave power amplification
L.F. Eastman;V. Tilak;J. Smart;B.M. Green.
IEEE Transactions on Electron Devices (2001)
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
V Cimalla;J Pezoldt;O Ambacher.
Journal of Physics D (2007)
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