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Materials Science
Germany
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
81
Citations
37521
World Ranking
477
National Ranking
13

Materials Science

D-Index
83
Citations
38657
World Ranking
2313
National Ranking
131

Research.com Recognitions

  • 2022 - Research.com Materials Science in Germany Leader Award

Overview

Oliver Ambacher is affiliated with the University of Freiburg in Germany. Their research focuses primarily on engineering, physics and astronomy, and materials science, with a significant emphasis on specialized subfields such as condensed matter physics, biomedical engineering, electrical and electronic engineering, mechanics of materials, and electronic, optical, and magnetic materials.

The scientist has contributed extensively to the study of GaN-based semiconductor devices and materials, acoustic wave resonator technologies, metal and thin film mechanics, as well as Ga2O3 and related materials. Other notable topics in their body of work include semiconductor materials and devices, ZnO doping and properties, and radio frequency integrated circuit design.

Oliver Ambacher's publication record includes several papers from 2021, published in reputable venues such as the Journal of Applied Physics, Applied Physics Letters, and Physical Review B. Key recent papers include:

  • Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties (2021, Journal of Applied Physics)
  • On the exceptional temperature stability of ferroelectric Al1-xScxN thin films (2021, Applied Physics Letters)
  • Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN (2021, Journal of Applied Physics)
  • First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N (2021, Physical Review B)
  • Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures (2021, Journal of Applied Physics)

Frequently publishing in the Journal of Applied Physics, Oliver Ambacher has over 20 publications there. Other significant venues for their research include Applied Physics Letters, physica status solidi (a), IEEE Transactions on Microwave Theory and Techniques, and arXiv (Cornell University).

Collaborations have involved a range of frequent coauthors, among them:

  • Lutz Kirste
  • M. Yassine
  • Mario Prescher
  • Stefano Leone
  • A. Yassine

Best Publications

  • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

    O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann

  • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

    O. Ambacher;B. Foutz;J. Smart;J. R. Shealy

  • Growth and applications of Group III-nitrides

    O Ambacher

  • Wireless sub-THz communication system with high data rate

    S. Koenig;D. Lopez-Diaz;J. Antes;J. Antes;F. Boes;F. Boes

  • Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

    O Ambacher;J Majewski;C Miskys;A Link

  • Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures

    Vincenzo Fiorentini;Fabio Bernardini;Oliver Ambacher

  • Optical constants of epitaxial AlGaN films and their temperature dependence

    D. Brunner;H. Angerer;E. Bustarret;F. Freudenberg

  • Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

    T. Metzger;R. Höpler;E. Born;O. Ambacher

  • Undoped AlGaN/GaN HEMTs for microwave power amplification

    L.F. Eastman;V. Tilak;J. Smart;B.M. Green

  • Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

    V Cimalla;J Pezoldt;O Ambacher

  • Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

    Michael K. Kelly;Robert P. Vaudo;Vivek M. Phanse;Lutz Görgens

  • Electronic components produced by a method of separating two layers of material from one another

    Michael Kelly;Oliver Ambacher;Martin Stutzmann;Martin Brandt

  • Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

    O. Ambacher;M. S. Brandt;R. Dimitrov;T. Metzger

  • Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3

    P. D. C. King;T. D. Veal;F. Fuchs;Ch. Y. Wang

  • Effects of solvent and annealing on the improved performance of solar cells based on poly(3-hexylthiophene): Fullerene

    Maher Al-Ibrahim;Oliver Ambacher;Steffi Sensfuss;Gerhard Gobsch

  • Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

    H. Angerer;D. Brunner;F. Freudenberg;O. Ambacher

  • Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements

    C. Deger;Eberhard Born;Helmut Angerer;Oliver Ambacher

  • Relation between absorption and crystallinity of poly(3-hexylthiophene)/fullerene films for plastic solar cells

    Uladzimir Zhokhavets;Tobias Erb;Gerhard Gobsch;Maher Al-Ibrahim

  • Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films

    W. Rieger;T. Metzger;H. Angerer;R. Dimitrov

  • Optical Process for Liftoff of Group III-Nitride Films

    M. K. Kelly;O. Ambacher;R. Dimitrov;R. Handschuh

Frequent Co-Authors

Martin Stutzmann
Martin Stutzmann Technical University of Munich
Michael Schlechtweg
Michael Schlechtweg Fraunhofer Institute for Applied Solid State Physics IAF
Arnulf Leuther
Arnulf Leuther Fraunhofer Society
Ingmar Kallfass
Ingmar Kallfass University of Stuttgart
Axel Tessmann
Axel Tessmann Fraunhofer Society
William J. Schaff
William J. Schaff Cornell University
Christoph E. Nebel
Christoph E. Nebel Diamond and Carbon Applications
Martin Eickhoff
Martin Eickhoff University of Bremen
Martin S. Brandt
Martin S. Brandt Technical University of Munich
Lester F. Eastman
Lester F. Eastman Cornell University

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