D-Index & Metrics Best Publications
Materials Science
Germany
2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 92 Citations 38,131 735 World Ranking 785 National Ranking 46
Physics D-index 96 Citations 35,582 528 World Ranking 1284 National Ranking 108

Research.com Recognitions

Awards & Achievements

2023 - Research.com Materials Science in Germany Leader Award

2006 - Fellow of American Physical Society (APS) Citation For contributions to the microscopic understanding of electronic processes in semiconductors and the development of novel semiconductor devices

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Hydrogen
  • Optics

His primary scientific interests are in Optoelectronics, Analytical chemistry, Silicon, Condensed matter physics and Diamond. His Optoelectronics study integrates concerns from other disciplines, such as Field-effect transistor and Epitaxy. Martin Stutzmann has included themes like Hydrogen, Gallium nitride, Chemical vapor deposition and Band gap in his Analytical chemistry study.

Martin Stutzmann interconnects Amorphous solid, Amorphous silicon, Doping and Optics in the investigation of issues within Silicon. His studies deal with areas such as Crystallography, Spin polarization and Hall effect as well as Condensed matter physics. His Diamond course of study focuses on Nanotechnology and Semiconductor.

His most cited work include:

  • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures (2141 citations)
  • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures (1193 citations)
  • Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. (954 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Analytical chemistry, Silicon, Condensed matter physics and Doping. His study of Heterojunction is a part of Optoelectronics. His studies in Analytical chemistry integrate themes in fields like Hydrogen, Chemical vapor deposition and Diamond.

Martin Stutzmann has researched Silicon in several fields, including Amorphous solid, Amorphous silicon and Luminescence. The study incorporates disciplines such as Crystallography, Annealing and Metastability in addition to Amorphous silicon. His work deals with themes such as Electron paramagnetic resonance and Resonance, which intersect with Condensed matter physics.

He most often published in these fields:

  • Optoelectronics (29.69%)
  • Analytical chemistry (23.20%)
  • Silicon (21.75%)

What were the highlights of his more recent work (between 2010-2021)?

  • Optoelectronics (29.69%)
  • Nanotechnology (8.65%)
  • Silicon (21.75%)

In recent papers he was focusing on the following fields of study:

Martin Stutzmann mostly deals with Optoelectronics, Nanotechnology, Silicon, Diamond and Analytical chemistry. Optoelectronics is frequently linked to Molecular beam epitaxy in his study. His Molecular beam epitaxy research includes themes of Band gap, Exciton, Sapphire and Photoluminescence.

The concepts of his Nanotechnology study are interwoven with issues in Field-effect transistor, Surface modification and Electrode. His Silicon study also includes fields such as

  • Doping together with Thin film,
  • Nuclear magnetic resonance most often made with reference to Spins,
  • Atomic physics, which have a strong connection to Excitation. His research integrates issues of Electrolyte and Conductivity in his study of Analytical chemistry.

Between 2010 and 2021, his most popular works were:

  • Chemical control of the charge state of nitrogen-vacancy centers in diamond (216 citations)
  • Graphene Transistor Arrays for Recording Action Potentials from Electrogenic Cells (172 citations)
  • Charge state manipulation of qubits in diamond (144 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Photon
  • Oxygen

Martin Stutzmann spends much of his time researching Optoelectronics, Nanotechnology, Diamond, Silicon and Analytical chemistry. His works in Nanowire, Heterojunction, Charge carrier, Semiconductor and Doping are all subjects of inquiry into Optoelectronics. The concepts of his Nanotechnology study are interwoven with issues in Biocompatibility and Surface modification.

His Diamond study combines topics in areas such as Substrate, Conductive polymer, Electrode and Biosensor. His Silicon research is multidisciplinary, incorporating perspectives in Photovoltaics, Hybrid solar cell, Spins, Atomic physics and Nuclear magnetic resonance. Martin Stutzmann incorporates Analytical chemistry and Thermodynamic efficiency limit in his research.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann.
Journal of Applied Physics (1999)

3284 Citations

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher;B. Foutz;J. Smart;J. R. Shealy.
Journal of Applied Physics (2000)

1872 Citations

Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study.

M. Stutzmann;W. B. Jackson;C. C. Tsai.
Physical Review B (1985)

1597 Citations

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O Ambacher;J Majewski;C Miskys;A Link.
Journal of Physics: Condensed Matter (2002)

1276 Citations

The origin of visible luminescencefrom “porous silicon”: A new interpretation

M.S. Brandt;H.D. Fuchs;M. Stutzmann;J. Weber.
Solid State Communications (1992)

1090 Citations

Optical constants of epitaxial AlGaN films and their temperature dependence

D. Brunner;H. Angerer;E. Bustarret;F. Freudenberg.
Journal of Applied Physics (1997)

726 Citations

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

T. Metzger;R. Höpler;E. Born;O. Ambacher.
Philosophical Magazine (1998)

686 Citations

Protein-modified nanocrystalline diamond thin films for biosensor applications

Andreas Härtl;Evelyn Schmich;Jose A. Garrido;Jorge Hernando.
Nature Materials (2004)

608 Citations

Black nonreflecting silicon surfaces for solar cells

Svetoslav Koynov;Martin S. Brandt;Martin Stutzmann.
Applied Physics Letters (2006)

559 Citations

The defect density in amorphous silicon

M. Stutzmann.
Philosophical Magazine Part B (1989)

453 Citations

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