Martin Stutzmann

Research.com Recognitions

• 2022 - Research.com Materials Science in Germany Leader Award
• 2006 - Fellow of American Physical Society (APS) Citation For contributions to the microscopic understanding of electronic processes in semiconductors and the development of novel semiconductor devices

Overview

Best Publications

• Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

  O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann

  3741
  Citations

• Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

  O. Ambacher;B. Foutz;J. Smart;J. R. Shealy

  2132
  Citations

• Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study.

  M. Stutzmann;W. B. Jackson;C. C. Tsai

  1625
  Citations

• Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

  O Ambacher;J Majewski;C Miskys;A Link

  1399
  Citations

• The origin of visible luminescencefrom “porous silicon”: A new interpretation

  M.S. Brandt;H.D. Fuchs;M. Stutzmann;J. Weber

  1095
  Citations

• Optical constants of epitaxial AlGaN films and their temperature dependence

  D. Brunner;H. Angerer;E. Bustarret;F. Freudenberg

  799
  Citations

• Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

  T. Metzger;R. Höpler;E. Born;O. Ambacher

  759
  Citations

• Protein-modified nanocrystalline diamond thin films for biosensor applications

  Andreas Härtl;Evelyn Schmich;Jose A. Garrido;Jorge Hernando

  634
  Citations

• Black nonreflecting silicon surfaces for solar cells

  Svetoslav Koynov;Martin S. Brandt;Martin Stutzmann

  580
  Citations

• The defect density in amorphous silicon

  M. Stutzmann

  466
  Citations

• Chemical control of the charge state of nitrogen-vacancy centers in diamond

  M. V. Hauf;B. Grotz;B. Naydenov;M. Dankerl

  440
  Citations

• Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

  Michael K. Kelly;Robert P. Vaudo;Vivek M. Phanse;Lutz Görgens

  417
  Citations

• Electronic components produced by a method of separating two layers of material from one another

  Michael Kelly;Oliver Ambacher;Martin Stutzmann;Martin Brandt

  403
  Citations

• Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

  O. Ambacher;M. S. Brandt;R. Dimitrov;T. Metzger

  399
  Citations

• pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

  G. Steinhoff;M. Hermann;W. J. Schaff;L. F. Eastman

  371
  Citations

• Detailed investigation of doping in hydrogenated amorphous silicon and germanium.

  M Stutzmann;DK Biegelsen;RA Street

  370
  Citations

• Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

  H. Angerer;D. Brunner;F. Freudenberg;O. Ambacher

  346
  Citations

• Electronic properties of semiconducting FeSi2 films

  C. A. Dimitriadis;J. H. Werner;S. Logothetidis;M. Stutzmann

  314
  Citations

• Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements

  C. Deger;Eberhard Born;Helmut Angerer;Oliver Ambacher

  311
  Citations

• Electronic and optical properties of boron-doped nanocrystalline diamond films

  Wojciech Gajewski;Philipp Achatz;O. A. Williams;Ken Haenen

  303
  Citations

• Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films

  W. Rieger;T. Metzger;H. Angerer;R. Dimitrov

  296
  Citations