The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Martin Stutzmann sits on this spectrum.
This scientist: 778 publications — 97th percentile
97% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Martin Stutzmann sits on this spectrum.
This scientist: 98 D-Index — 91st percentile
91% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Martin Stutzmann is affiliated with the Technical University of Munich in Germany. Their research spans multiple fields, primarily focused on engineering, materials science, and physics and astronomy. Subfields of particular emphasis include electrical and electronic engineering, materials chemistry, condensed matter physics, electronic, optical and magnetic materials, and biomedical engineering.
The primary topics of Stutzmann's work cover a range of semiconductor materials and devices. Key areas include:
The scientist has a record of frequent collaboration. Among their regular co-authors are Florian Pantle, Ian D. Sharp, Christoph Csoklich, Max Kraut, and Johannes D. Bartl.
Stutzmann has published in various journals multiple times, with recurrent publication venues including:
Recent papers representative of their research contributions include:
In addition to journal articles, Stutzmann has contributed to book publications. Notably, one book titled "The Physics of Renewable Energy" was published by Springer Nature in 2022 and has received citations as well.
Recognition for Stutzmann's work includes being awarded the status of Fellow of the American Physical Society (APS) in 2006, with a citation highlighting contributions to the microscopic understanding of electronic processes in semiconductors and the development of novel semiconductor devices.
O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann
O. Ambacher;B. Foutz;J. Smart;J. R. Shealy
M. Stutzmann;W. B. Jackson;C. C. Tsai
O Ambacher;J Majewski;C Miskys;A Link
M.S. Brandt;H.D. Fuchs;M. Stutzmann;J. Weber
D. Brunner;H. Angerer;E. Bustarret;F. Freudenberg
T. Metzger;R. Höpler;E. Born;O. Ambacher
Andreas Härtl;Evelyn Schmich;Jose A. Garrido;Jorge Hernando
Svetoslav Koynov;Martin S. Brandt;Martin Stutzmann
M. Stutzmann
M. V. Hauf;B. Grotz;B. Naydenov;M. Dankerl
Michael K. Kelly;Robert P. Vaudo;Vivek M. Phanse;Lutz Görgens
Michael Kelly;Oliver Ambacher;Martin Stutzmann;Martin Brandt
O. Ambacher;M. S. Brandt;R. Dimitrov;T. Metzger
G. Steinhoff;M. Hermann;W. J. Schaff;L. F. Eastman
M Stutzmann;DK Biegelsen;RA Street
H. Angerer;D. Brunner;F. Freudenberg;O. Ambacher
C. A. Dimitriadis;J. H. Werner;S. Logothetidis;M. Stutzmann
C. Deger;Eberhard Born;Helmut Angerer;Oliver Ambacher
Wojciech Gajewski;Philipp Achatz;O. A. Williams;Ken Haenen
W. Rieger;T. Metzger;H. Angerer;R. Dimitrov
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