2023 - Research.com Electronics and Electrical Engineering in United States Leader Award
2012 - SPIE Fellow
2012 - Fellow of the Materials Research Society
2008 - Fellow of American Physical Society (APS) Citation For contributions to the development of device processing technologies for compound semiconductor devices based on GaAs, InP, ZnO and GaN
Fan Ren mainly focuses on Optoelectronics, Analytical chemistry, Wide-bandgap semiconductor, Nanotechnology and Diode. His Optoelectronics study combines topics in areas such as Transistor and Breakdown voltage. His work deals with themes such as Hydrogen, Molecular beam epitaxy, Annealing and Etching, Dry etching, which intersect with Analytical chemistry.
His Annealing study also includes fields such as
Fan Ren focuses on Optoelectronics, Analytical chemistry, Transistor, Annealing and Wide-bandgap semiconductor. His Optoelectronics research includes elements of Breakdown voltage and High-electron-mobility transistor. The Analytical chemistry study which covers Dry etching that intersects with Reactive-ion etching and Plasma etching.
His Annealing research integrates issues from Ion implantation, Ohmic contact, Doping and Thermal stability. His Doping research is multidisciplinary, relying on both Molecular beam epitaxy and Epitaxy. His studies deal with areas such as Band gap and Bipolar junction transistor as well as Heterojunction.
Optoelectronics, Transistor, Schottky diode, Analytical chemistry and Band gap are his primary areas of study. His study in Optoelectronics is interdisciplinary in nature, drawing from both High-electron-mobility transistor and Irradiation. His Transistor study combines topics in areas such as Layer, Semiconductor, Electrode and Biosensor.
The concepts of his Schottky diode study are interwoven with issues in Hydrogen, Breakdown voltage, Epitaxy, Schottky barrier and Substrate. Fan Ren studied Analytical chemistry and Annealing that intersect with Ion. Fan Ren combines subjects such as Gate dielectric and Dielectric with his study of Band gap.
His primary areas of study are Optoelectronics, Analytical chemistry, Schottky diode, Diode and Breakdown voltage. The study incorporates disciplines such as Transistor and Irradiation in addition to Optoelectronics. His biological study spans a wide range of topics, including Electron, Fermi level, Annealing, Dielectric and Proton.
His Schottky diode research is multidisciplinary, incorporating elements of Inductively coupled plasma, Silicon, Epitaxy and Voltage. While the research belongs to areas of Diode, Fan Ren spends his time largely on the problem of Dry etching, intersecting his research to questions surrounding Photoluminescence, Resist and BCL3. His Wide-bandgap semiconductor study incorporates themes from Content, Gallium nitride and Light-emitting diode.
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GAN : PROCESSING, DEFECTS, AND DEVICES
S. J. Pearton;J. C. Zolper;R. J. Shul;F. Ren.
Journal of Applied Physics (1999)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton;Jiancheng Yang;Patrick H. Cary;F. Ren.
Applied physics reviews (2018)
Wide band gap ferromagnetic semiconductors and oxides
S. J. Pearton;C. R. Abernathy;M. E. Overberg;G. T. Thaler.
Journal of Applied Physics (2003)
ZnO nanowire growth and devices
Y.W. Heo;D.P. Norton;L.C. Tien;Y. Kwon.
Materials Science & Engineering R-reports (2004)
Hydrogen-selective sensing at room temperature with ZnO nanorods
H. T. Wang;B. S. Kang;F. Ren;L. C. Tien.
Applied Physics Letters (2005)
Fabrication and performance of GaN electronic devices
S.J. Pearton;F. Ren;A.P. Zhang;K.P. Lee.
Materials Science & Engineering R-reports (2000)
Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
B. Zheng;J. Michel;F. Y. G. Ren;L. C. Kimerling.
Applied Physics Letters (1994)
Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy
Y. W. Heo;V. Varadarajan;M. Kaufman;K. Kim.
Applied Physics Letters (2002)
Magnetic properties of n-GaMnN thin films
G. T. Thaler;M. E. Overberg;B. Gila;R. Frazier.
Applied Physics Letters (2002)
GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
S J Pearton;B S Kang;Suku Kim;F Ren.
Journal of Physics: Condensed Matter (2004)
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