H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering H-index 87 Citations 30,949 817 World Ranking 97 National Ranking 56
Materials Science H-index 98 Citations 41,294 1,152 World Ranking 447 National Ranking 177

Research.com Recognitions

Awards & Achievements

2012 - Fellow of the Materials Research Society

2012 - SPIE Fellow

2008 - Fellow of American Physical Society (APS) Citation For contributions to the development of device processing technologies for compound semiconductor devices based on GaAs, InP, ZnO and GaN

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Quantum mechanics
  • Electron

Fan Ren mainly focuses on Optoelectronics, Analytical chemistry, Wide-bandgap semiconductor, Nanotechnology and Diode. His Optoelectronics study combines topics in areas such as Transistor and Breakdown voltage. His work deals with themes such as Hydrogen, Molecular beam epitaxy, Annealing and Etching, Dry etching, which intersect with Analytical chemistry.

His Annealing study also includes fields such as

  • Ohmic contact that intertwine with fields like Electrical resistivity and conductivity,
  • Thermal stability which is related to area like Metallurgy. His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Magnetic semiconductor, Gate dielectric, Passivation and Band gap. His research integrates issues of Oxide and Light-emitting diode in his study of Diode.

His most cited work include:

  • GAN : PROCESSING, DEFECTS, AND DEVICES (1507 citations)
  • Wide band gap ferromagnetic semiconductors and oxides (894 citations)
  • A review of Ga2O3 materials, processing, and devices (634 citations)

What are the main themes of his work throughout his whole career to date?

Fan Ren focuses on Optoelectronics, Analytical chemistry, Transistor, Annealing and Wide-bandgap semiconductor. His Optoelectronics research includes elements of Breakdown voltage and High-electron-mobility transistor. The Analytical chemistry study which covers Dry etching that intersects with Reactive-ion etching and Plasma etching.

His Annealing research integrates issues from Ion implantation, Ohmic contact, Doping and Thermal stability. His Doping research is multidisciplinary, relying on both Molecular beam epitaxy and Epitaxy. His studies deal with areas such as Band gap and Bipolar junction transistor as well as Heterojunction.

He most often published in these fields:

  • Optoelectronics (58.70%)
  • Analytical chemistry (29.42%)
  • Transistor (16.66%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (58.70%)
  • Transistor (16.66%)
  • Schottky diode (12.42%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Transistor, Schottky diode, Analytical chemistry and Band gap are his primary areas of study. His study in Optoelectronics is interdisciplinary in nature, drawing from both High-electron-mobility transistor and Irradiation. His Transistor study combines topics in areas such as Layer, Semiconductor, Electrode and Biosensor.

The concepts of his Schottky diode study are interwoven with issues in Hydrogen, Breakdown voltage, Epitaxy, Schottky barrier and Substrate. Fan Ren studied Analytical chemistry and Annealing that intersect with Ion. Fan Ren combines subjects such as Gate dielectric and Dielectric with his study of Band gap.

Between 2014 and 2021, his most popular works were:

  • A review of Ga2O3 materials, processing, and devices (634 citations)
  • Perspective—Opportunities and Future Directions for Ga2O3 (175 citations)
  • Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS (132 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

His primary areas of study are Optoelectronics, Analytical chemistry, Schottky diode, Diode and Breakdown voltage. The study incorporates disciplines such as Transistor and Irradiation in addition to Optoelectronics. His biological study spans a wide range of topics, including Electron, Fermi level, Annealing, Dielectric and Proton.

His Schottky diode research is multidisciplinary, incorporating elements of Inductively coupled plasma, Silicon, Epitaxy and Voltage. While the research belongs to areas of Diode, Fan Ren spends his time largely on the problem of Dry etching, intersecting his research to questions surrounding Photoluminescence, Resist and BCL3. His Wide-bandgap semiconductor study incorporates themes from Content, Gallium nitride and Light-emitting diode.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

GAN : PROCESSING, DEFECTS, AND DEVICES

S. J. Pearton;J. C. Zolper;R. J. Shul;F. Ren.
Journal of Applied Physics (1999)

2088 Citations

Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton;C. R. Abernathy;M. E. Overberg;G. T. Thaler.
Journal of Applied Physics (2003)

1132 Citations

ZnO nanowire growth and devices

Y.W. Heo;D.P. Norton;L.C. Tien;Y. Kwon.
Materials Science & Engineering R-reports (2004)

728 Citations

Hydrogen-selective sensing at room temperature with ZnO nanorods

H. T. Wang;B. S. Kang;F. Ren;L. C. Tien.
Applied Physics Letters (2005)

641 Citations

A review of Ga2O3 materials, processing, and devices

S. J. Pearton;Jiancheng Yang;Patrick H. Cary;F. Ren.
Applied physics reviews (2018)

617 Citations

Fabrication and performance of GaN electronic devices

S.J. Pearton;F. Ren;A.P. Zhang;K.P. Lee.
Materials Science & Engineering R-reports (2000)

587 Citations

Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode

B. Zheng;J. Michel;F. Y. G. Ren;L. C. Kimerling.
Applied Physics Letters (1994)

471 Citations

Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy

Y. W. Heo;V. Varadarajan;M. Kaufman;K. Kim.
Applied Physics Letters (2002)

448 Citations

Magnetic properties of n-GaMnN thin films

G. T. Thaler;M. E. Overberg;B. Gila;R. Frazier.
Applied Physics Letters (2002)

439 Citations

GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

S J Pearton;B S Kang;Suku Kim;F Ren.
Journal of Physics: Condensed Matter (2004)

363 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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Top Scientists Citing Fan Ren

Stephen J. Pearton

Stephen J. Pearton

University of Florida

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National Tsing Hua University

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University of California, Santa Barbara

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Yue Hao

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Xidian University

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Steven P. DenBaars

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University of California, Santa Barbara

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David P. Norton

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University of Florida

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Jincheng Zhang

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Seong-Ju Park

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