The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Fan Ren sits on this spectrum.
This scientist: 1,538 publications — 100th percentile
100% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Fan Ren sits on this spectrum.
This scientist: 107 D-Index — 98th percentile
98% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Fan Ren mainly focuses on Optoelectronics, Analytical chemistry, Wide-bandgap semiconductor, Nanotechnology and Diode. His Optoelectronics study combines topics in areas such as Transistor and Breakdown voltage. His work deals with themes such as Hydrogen, Molecular beam epitaxy, Annealing and Etching, Dry etching, which intersect with Analytical chemistry.
His Annealing study also includes fields such as
Fan Ren focuses on Optoelectronics, Analytical chemistry, Transistor, Annealing and Wide-bandgap semiconductor. His Optoelectronics research includes elements of Breakdown voltage and High-electron-mobility transistor. The Analytical chemistry study which covers Dry etching that intersects with Reactive-ion etching and Plasma etching.
His Annealing research integrates issues from Ion implantation, Ohmic contact, Doping and Thermal stability. His Doping research is multidisciplinary, relying on both Molecular beam epitaxy and Epitaxy. His studies deal with areas such as Band gap and Bipolar junction transistor as well as Heterojunction.
Optoelectronics, Transistor, Schottky diode, Analytical chemistry and Band gap are his primary areas of study. His study in Optoelectronics is interdisciplinary in nature, drawing from both High-electron-mobility transistor and Irradiation. His Transistor study combines topics in areas such as Layer, Semiconductor, Electrode and Biosensor.
The concepts of his Schottky diode study are interwoven with issues in Hydrogen, Breakdown voltage, Epitaxy, Schottky barrier and Substrate. Fan Ren studied Analytical chemistry and Annealing that intersect with Ion. Fan Ren combines subjects such as Gate dielectric and Dielectric with his study of Band gap.
His primary areas of study are Optoelectronics, Analytical chemistry, Schottky diode, Diode and Breakdown voltage. The study incorporates disciplines such as Transistor and Irradiation in addition to Optoelectronics. His biological study spans a wide range of topics, including Electron, Fermi level, Annealing, Dielectric and Proton.
His Schottky diode research is multidisciplinary, incorporating elements of Inductively coupled plasma, Silicon, Epitaxy and Voltage. While the research belongs to areas of Diode, Fan Ren spends his time largely on the problem of Dry etching, intersecting his research to questions surrounding Photoluminescence, Resist and BCL3. His Wide-bandgap semiconductor study incorporates themes from Content, Gallium nitride and Light-emitting diode.
S. J. Pearton;Jiancheng Yang;Patrick H. Cary;F. Ren
S. J. Pearton;J. C. Zolper;R. J. Shul;F. Ren
S. J. Pearton;C. R. Abernathy;M. E. Overberg;G. T. Thaler
Y.W. Heo;D.P. Norton;L.C. Tien;Y. Kwon
H. T. Wang;B. S. Kang;F. Ren;L. C. Tien
S.J. Pearton;F. Ren;A.P. Zhang;K.P. Lee
Stephen J. Pearton;Fan Ren;Marko Tadjer;Jihyun Kim
B. Zheng;J. Michel;F. Y. G. Ren;L. C. Kimerling
Michael A. Mastro;Akito Kuramata;Jacob Calkins;Jihyun Kim
Y. W. Heo;V. Varadarajan;M. Kaufman;K. Kim
G. T. Thaler;M. E. Overberg;B. Gila;R. Frazier
S J Pearton;B S Kang;Suku Kim;F Ren
S. J. Pearton;F. Ren;Erin Patrick;M. E. Law
L. C. Tien;P. W. Sadik;D. P. Norton;L. F. Voss
Y. W. Heo;L. C. Tien;Y. Kwon;D. P. Norton
S.J. Pearton;F. Ren;Yu-Lin Wang;B.H. Chu
A.G Baca;F Ren;J.C Zolper;R.D Briggs
F. Ren;M. Hong;S. N. G. Chu;M. A. Marcus
C. R. Abernathy;S. J. Pearton;R. Caruso;F. Ren
S.J. Pearton;R. J. Shul;Fan Ren
K. Ip;M. E. Overberg;Y. W. Heo;D. P. Norton
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