World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
6022
World Ranking
5110
National Ranking
1776

Xian-An Cao publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Xian-An Cao sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 174 publications — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Xian-An Cao D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Xian-An Cao sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Xian-An Cao is affiliated with West Virginia University in the United States. The available data does not include specific details on their recent publications, co-authors, or main fields of study, but highlights their institutional connection.

No information is provided concerning published papers, including titles, publication years, or venues. Likewise, there are no recorded collaborative partners or frequent publication venues associated with their work.

The academic profile does not list any book publications or details on publishers related to Xian-An Cao's work.

Data on primary fields, subfields, or main topics of research activity has not been made available for this individual.

There are no listed awards or recognitions linked to their career, and there is no indication that they are deceased.

Best Publications

  • Resonant cavity light emitting devices and associated method

    Mark Philip D'Evelyn;Xian-An Cao;Anping Zhang;Steven Francis LeBoeuf

  • Homoepitaxial gallium-nitride-based light emitting device and method for producing

    Mark Philip D'Evelyn;Nicole Andrea Evers;Steven Francis LeBoeuf;Xian-An Cao

  • Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes

    X.A. Cao;E.B. Stokes;P.M. Sandvik;S.F. LeBoeuf

  • Electrical effects of plasma damage in p-GaN

    X. A. Cao;S. J. Pearton;A. P. Zhang;G. T. Dang

  • Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses

    X.A. Cao;P.M. Sandvik;S.F. LeBoeuf;S.D. Arthur

  • High-power and reliable operation of vertical light-emitting diodes on bulk GaN

    X. A. Cao;S. D. Arthur

  • Depth and thermal stability of dry etch damage in GaN Schottky diodes

    X. A. Cao;H. Cho;S. J. Pearton;G. T. Dang

  • Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes

    X. A. Cao;S. F. LeBoeuf;L. B. Rowland;C. H. Yan

  • Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

    X.A Cao;J.A Teetsov;F Shahedipour-Sandvik;S.D Arthur

  • Flip-chip light emitting diode

    Edward B. Stokes;Mark P. D'Evelyn;Stanton E. Weaver;Peter M. Sandvik

  • Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes

    Yi Yang;Xian An Cao;Chunhui Yan

  • Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates

    X. A. Cao;S. F. LeBoeuf;M. P. D’Evelyn;S. D. Arthur

  • Electrical characteristics of InGaN∕GaN light-emitting diodes grown on GaN and sapphire substrates

    X. A. Cao;J. M. Teetsov;M. P. D’Evelyn;D. W. Merfeld

  • GaN electronics for high power, high temperature applications

    S.J. Pearton;F. Ren;A.P. Zhang;G. Dang

  • High voltage GaN Schottky rectifiers

    G.T. Dang;A.P. Zhang;F. Ren;X.A. Cao

  • Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

    J. Han;A. G. Baca;R. J. Shul;C. G. Willison

  • Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN

    X. A. Cao;S. J. Pearton;G. Dang;A. P. Zhang

  • Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system

    X. A. Cao;C. R. Abernathy;R. K. Singh;S. J. Pearton

  • Semiconductor devices and methods of manufacture

    Xian-An Cao;Stephen Arthur

  • GaN n- and p-type Schottky diodes: Effect of dry etch damage

    X.A. Cao;S.J. Pearton;G.T. Dang;A.P. Zhang

Frequent Co-Authors

Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida
R. G. Wilson
R. G. Wilson General Motors (United States)
C. R. Abernathy
C. R. Abernathy University of Florida
Rajiv K. Singh
Rajiv K. Singh Entegris (United States)
Albert G. Baca
Albert G. Baca Sandia National Laboratories
Jung Han
Jung Han Yale University
Jen-Inn Chyi
Jen-Inn Chyi National Central University

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