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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
6022
World Ranking
5110
National Ranking
1775

Overview

Xian-An Cao is affiliated with West Virginia University in the United States. The available data does not include specific details on their recent publications, co-authors, or main fields of study, but highlights their institutional connection.

No information is provided concerning published papers, including titles, publication years, or venues. Likewise, there are no recorded collaborative partners or frequent publication venues associated with their work.

The academic profile does not list any book publications or details on publishers related to Xian-An Cao's work.

Data on primary fields, subfields, or main topics of research activity has not been made available for this individual.

There are no listed awards or recognitions linked to their career, and there is no indication that they are deceased.

Best Publications

  • Resonant cavity light emitting devices and associated method

    Mark Philip D'Evelyn;Xian-An Cao;Anping Zhang;Steven Francis LeBoeuf

  • Homoepitaxial gallium-nitride-based light emitting device and method for producing

    Mark Philip D'Evelyn;Nicole Andrea Evers;Steven Francis LeBoeuf;Xian-An Cao

  • Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes

    X.A. Cao;E.B. Stokes;P.M. Sandvik;S.F. LeBoeuf

  • Electrical effects of plasma damage in p-GaN

    X. A. Cao;S. J. Pearton;A. P. Zhang;G. T. Dang

  • Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses

    X.A. Cao;P.M. Sandvik;S.F. LeBoeuf;S.D. Arthur

  • High-power and reliable operation of vertical light-emitting diodes on bulk GaN

    X. A. Cao;S. D. Arthur

  • Depth and thermal stability of dry etch damage in GaN Schottky diodes

    X. A. Cao;H. Cho;S. J. Pearton;G. T. Dang

  • Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes

    X. A. Cao;S. F. LeBoeuf;L. B. Rowland;C. H. Yan

  • Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

    X.A Cao;J.A Teetsov;F Shahedipour-Sandvik;S.D Arthur

  • Flip-chip light emitting diode

    Edward B. Stokes;Mark P. D'Evelyn;Stanton E. Weaver;Peter M. Sandvik

  • Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes

    Yi Yang;Xian An Cao;Chunhui Yan

  • Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates

    X. A. Cao;S. F. LeBoeuf;M. P. D’Evelyn;S. D. Arthur

  • Electrical characteristics of InGaN∕GaN light-emitting diodes grown on GaN and sapphire substrates

    X. A. Cao;J. M. Teetsov;M. P. D’Evelyn;D. W. Merfeld

  • GaN electronics for high power, high temperature applications

    S.J. Pearton;F. Ren;A.P. Zhang;G. Dang

  • High voltage GaN Schottky rectifiers

    G.T. Dang;A.P. Zhang;F. Ren;X.A. Cao

  • Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

    J. Han;A. G. Baca;R. J. Shul;C. G. Willison

  • Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN

    X. A. Cao;S. J. Pearton;G. Dang;A. P. Zhang

  • Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system

    X. A. Cao;C. R. Abernathy;R. K. Singh;S. J. Pearton

  • Semiconductor devices and methods of manufacture

    Xian-An Cao;Stephen Arthur

  • GaN n- and p-type Schottky diodes: Effect of dry etch damage

    X.A. Cao;S.J. Pearton;G.T. Dang;A.P. Zhang

Frequent Co-Authors

Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida
R. G. Wilson
R. G. Wilson General Motors (United States)
C. R. Abernathy
C. R. Abernathy University of Florida
Rajiv K. Singh
Rajiv K. Singh Entegris (United States)
Albert G. Baca
Albert G. Baca Sandia National Laboratories
Jung Han
Jung Han Yale University
Jen-Inn Chyi
Jen-Inn Chyi National Central University

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