Sung-Nee G. Chu

Sung-Nee G. Chu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Sung-Nee G. Chu sits on this spectrum.

Sung-Nee G. Chu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Sung-Nee G. Chu sits on this spectrum.

Research.com Recognitions

• 2006 - Fellow of American Physical Society (APS) Citation For contributions to the development of lasers and photodiodes for optical fiber communication systems

Overview

Best Publications

• High power mid‐infrared (λ∼5 μm) quantum cascade lasers operating above room temperature

  Jérôme Faist;Federico Capasso;Carlo Sirtori;Deborah L. Sivco

  602
  Citations

• Ga2O3 films for electronic and optoelectronic applications

  M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong

  529
  Citations

• Impression creep; a new creep test

  S. N. G. Chu;J. C. M. Li

  450
  Citations

• Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

  J. Kwo;M. Hong;A. R. Kortan;K. L. Queeney

  447
  Citations

• Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs

  Jérôme Faist;Federico Capasso;Deborah L. Sivco;Albert L. Hutchinson

  442
  Citations

• GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

  P. D. Ye;G. D. Wilk;B. Yang;J. Kwo

  419
  Citations

• Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes

  H. Temkin;G. J. Dolan;M. B. Panish;S. N. G. Chu

  409
  Citations

• Observation of an electronic bound state above a potential well

  Federico Capasso;Carlo Sirtori;Jerome Faist;Deborah L. Sivco

  396
  Citations

• Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

  J. W. P. Hsu;M. J. Manfra;D. V. Lang;S. Richter

  381
  Citations

• Magnetic and structural properties of Mn-implanted GaN

  N. Theodoropoulou;A. F. Hebard;M. E. Overberg;C. R. Abernathy

  355
  Citations

• GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

  P.D. Ye;G.D. Wilk;J. Kwo;B. Yang

  347
  Citations

• Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

  F. Ren;M. Hong;S. N. G. Chu;M. A. Marcus

  309
  Citations

• HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA

  S. A. Nikishin;N. N. Faleev;V. G. Antipov;S. Francoeur

  301
  Citations

• Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C.

  N. Theodoropoulou;A. F. Hebard;M. E. Overberg;C. R. Abernathy

  285
  Citations

• Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy

  S. N. G. Chu;A. T. Macrander;K. E. Strege;W. D. Johnston

  237
  Citations

• Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

  M. Passlack;M. Hong;J.P. Mannaerts;R.L. Opila

  222
  Citations

• Low interface state density oxide‐GaAs structures fabricated by in situ molecular beam epitaxy

  M. Hong;M. Passlack;J. P. Mannaerts;J. Kwo

  218
  Citations

• High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

  H. M. Ng;T. D. Moustakas;S. N. G. Chu

  216
  Citations

• Optical transitions in quantum wires with strain-induced lateral confinement.

  D. Gershoni;J. S. Weiner;S. N. G. Chu;G. A. Baraff

  198
  Citations

• Scattering-controlled transmission resonances and negative differential conductance by field-induced localization in superlattices.

  Fabio Beltram;Federico Capasso;Deborah L. Sivco;Albert L. Hutchinson

  194
  Citations

• Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

  F. Ren;M. Hong;W.S. Hobson;J.M. Kuo

  189
  Citations

• Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate

  Naresh Chand;E. E. Becker;J. P. van der Ziel;S. N. G. Chu

  180
  Citations

• Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

  D. Gershoni;H. Temkin;G. J. Dolan;J. Dunsmuir

  177
  Citations

• Kinetic surface roughening in molecular beam epitaxy of InP.

  M. A. Cotta;R. A. Hamm;T. W. Staley;S. N. G. Chu

  165
  Citations

• Surface layer spinodal decomposition in In1−xGaxAsyP1−y and In1−xGaxAs grown by hydride transport vapor‐phase epitaxy

  S. N. G. Chu;S. Nakahara;K. E. Strege;W. D. Johnston

  130
  Citations

• Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

  M. B. Panish;H. Temkin;R. A. Hamm;S. N. G. Chu

  120
  Citations

• Critical layer thickness in strained Ga1−xInxAs/InP quantum wells

  H. Temkin;D. G. Gershoni;S. N. G. Chu;J. M. Vandenberg

  109
  Citations

• Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

  R. E. Cavicchi;D. V. Lang;D. Gershoni;A. M. Sergent

  109
  Citations

• Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain‐coupled optical feedback

  W. T. Tsang;F. S. Choa;M. C. Wu;Y. K. Chen

  101
  Citations

• Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input

  J.E. Johnson;L.J.-P. Ketelsen;J.A. Grenko;S.K. Sputz

  99
  Citations

• Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy

  H. Temkin;S. N. G. Chu;M. B. Panish;R. A. Logan

  90
  Citations

• Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy

  T. Tanbun‐Ek;R. A. Logan;H. Temkin;K. Berthold

  89
  Citations

• Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers

  O. Blum;M. J. Hafich;J. F. Klem;K. L. Lear

  88
  Citations

• Type-I to type-II superlattice transition in strained layers of InxGa

  D. Gershoni;H. Temkin;J. M. Vandenberg;S. N. G. Chu

  87
  Citations

• Chemical ordering in AlGaN alloys grown by molecular beam epitaxy

  E. Iliopoulos;K. F. Ludwig;T. D. Moustakas;S. N. G. Chu

  82
  Citations