Sung-Nee G. Chu

Research.com Recognitions

• 2006 - Fellow of American Physical Society (APS) Citation For contributions to the development of lasers and photodiodes for optical fiber communication systems

Overview

Best Publications

• High power mid‐infrared (λ∼5 μm) quantum cascade lasers operating above room temperature

  Jérôme Faist;Federico Capasso;Carlo Sirtori;Deborah L. Sivco

  602
  Citations

• Ga2O3 films for electronic and optoelectronic applications

  M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong

  529
  Citations

• Impression creep; a new creep test

  S. N. G. Chu;J. C. M. Li

  450
  Citations

• Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

  J. Kwo;M. Hong;A. R. Kortan;K. L. Queeney

  447
  Citations

• Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs

  Jérôme Faist;Federico Capasso;Deborah L. Sivco;Albert L. Hutchinson

  442
  Citations

• GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

  P. D. Ye;G. D. Wilk;B. Yang;J. Kwo

  419
  Citations

• Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes

  H. Temkin;G. J. Dolan;M. B. Panish;S. N. G. Chu

  409
  Citations

• Observation of an electronic bound state above a potential well

  Federico Capasso;Carlo Sirtori;Jerome Faist;Deborah L. Sivco

  396
  Citations

• Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

  J. W. P. Hsu;M. J. Manfra;D. V. Lang;S. Richter

  381
  Citations

• Magnetic and structural properties of Mn-implanted GaN

  N. Theodoropoulou;A. F. Hebard;M. E. Overberg;C. R. Abernathy

  355
  Citations

• GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

  P.D. Ye;G.D. Wilk;J. Kwo;B. Yang

  347
  Citations

• Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

  F. Ren;M. Hong;S. N. G. Chu;M. A. Marcus

  309
  Citations

• HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA

  S. A. Nikishin;N. N. Faleev;V. G. Antipov;S. Francoeur

  301
  Citations

• Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C.

  N. Theodoropoulou;A. F. Hebard;M. E. Overberg;C. R. Abernathy

  285
  Citations

• Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy

  S. N. G. Chu;A. T. Macrander;K. E. Strege;W. D. Johnston

  237
  Citations

• Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

  M. Passlack;M. Hong;J.P. Mannaerts;R.L. Opila

  222
  Citations

• Low interface state density oxide‐GaAs structures fabricated by in situ molecular beam epitaxy

  M. Hong;M. Passlack;J. P. Mannaerts;J. Kwo

  218
  Citations

• High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

  H. M. Ng;T. D. Moustakas;S. N. G. Chu

  216
  Citations

• Optical transitions in quantum wires with strain-induced lateral confinement.

  D. Gershoni;J. S. Weiner;S. N. G. Chu;G. A. Baraff

  198
  Citations

• Scattering-controlled transmission resonances and negative differential conductance by field-induced localization in superlattices.

  Fabio Beltram;Federico Capasso;Deborah L. Sivco;Albert L. Hutchinson

  194
  Citations

• Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

  F. Ren;M. Hong;W.S. Hobson;J.M. Kuo

  189
  Citations

• Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate

  Naresh Chand;E. E. Becker;J. P. van der Ziel;S. N. G. Chu

  180
  Citations

• Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

  D. Gershoni;H. Temkin;G. J. Dolan;J. Dunsmuir

  177
  Citations

• Kinetic surface roughening in molecular beam epitaxy of InP.

  M. A. Cotta;R. A. Hamm;T. W. Staley;S. N. G. Chu

  165
  Citations

• Surface layer spinodal decomposition in In1−xGaxAsyP1−y and In1−xGaxAs grown by hydride transport vapor‐phase epitaxy

  S. N. G. Chu;S. Nakahara;K. E. Strege;W. D. Johnston

  130
  Citations

• Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

  M. B. Panish;H. Temkin;R. A. Hamm;S. N. G. Chu

  120
  Citations

• Critical layer thickness in strained Ga1−xInxAs/InP quantum wells

  H. Temkin;D. G. Gershoni;S. N. G. Chu;J. M. Vandenberg

  109
  Citations

• Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

  R. E. Cavicchi;D. V. Lang;D. Gershoni;A. M. Sergent

  109
  Citations

• Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain‐coupled optical feedback

  W. T. Tsang;F. S. Choa;M. C. Wu;Y. K. Chen

  101
  Citations

• Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input

  J.E. Johnson;L.J.-P. Ketelsen;J.A. Grenko;S.K. Sputz

  99
  Citations

• Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy

  H. Temkin;S. N. G. Chu;M. B. Panish;R. A. Logan

  90
  Citations

• Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy

  T. Tanbun‐Ek;R. A. Logan;H. Temkin;K. Berthold

  89
  Citations

• Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers

  O. Blum;M. J. Hafich;J. F. Klem;K. L. Lear

  88
  Citations

• Type-I to type-II superlattice transition in strained layers of InxGa

  D. Gershoni;H. Temkin;J. M. Vandenberg;S. N. G. Chu

  87
  Citations

• Chemical ordering in AlGaN alloys grown by molecular beam epitaxy

  E. Iliopoulos;K. F. Ludwig;T. D. Moustakas;S. N. G. Chu

  82
  Citations