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Sung-Nee G. Chu

Sung-Nee G. Chu

AXT
United States

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 41 12706 12290 2911 2707 210 6645

Sung-Nee G. Chu publications per year

The chart shows the history of publications by Sung-Nee G. Chu between 1974 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Sung-Nee G. Chu published across 52 years, from 1974 to 2025, averaging 4.3 papers a year. Output peaked at 27 publications in 1991. 4 of the 226 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1974 to 2025. Vertical axis: number of publications, 0 to 27. Peak 27 publications in 1991. 1974: 1 publication 1975: 0 publications 1976: 0 publications 1977: 1 publication 1978: 0 publications 1979: 1 publication 1980: 4 publications 1981: 1 publication 1982: 2 publications 1983: 0 publications 1984: 1 publication 1985: 11 publications 1986: 12 publications 1987: 12 publications 1988: 10 publications 1989: 19 publications 1990: 24 publications 1991: 27 publications 1992: 13 publications 1993: 23 publications 1994: 14 publications 1995: 12 publications 1996: 6 publications 1997: 4 publications 1998: 0 publications 1999: 6 publications 2000: 7 publications 2001: 8 publications 2002: 1 publication 2003: 1 publication 2004: 0 publications 2005: 0 publications 2006: 0 publications 2007: 1 publication 2008: 0 publications 2009: 0 publications 2010: 0 publications 2011: 0 publications 2012: 0 publications 2013: 0 publications 2014: 0 publications 2015: 0 publications 2016: 0 publications 2017: 0 publications 2018: 0 publications 2019: 0 publications 2020: 0 publications 2021: 0 publications 2022: 0 publications 2023: 0 publications 2024: 1 publication 2025: 3 publications
1974 2025

226 publications in total across all disciplines

View publications per year as a table
Sung-Nee G. Chu: publications per year, 1974 to 2025
Year Publications
1974 1
1975 0
1976 0
1977 1
1978 0
1979 1
1980 4
1981 1
1982 2
1983 0
1984 1
1985 11
1986 12
1987 12
1988 10
1989 19
1990 24
1991 27
1992 13
1993 23
1994 14
1995 12
1996 6
1997 4
1998 0
1999 6
2000 7
2001 8
2002 1
2003 1
2004 0
2005 0
2006 0
2007 1
2008 0
2009 0
2010 0
2011 0
2012 0
2013 0
2014 0
2015 0
2016 0
2017 0
2018 0
2019 0
2020 0
2021 0
2022 0
2023 0
2024 1
2025 3
Total 226
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Sung-Nee G. Chu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Sung-Nee G. Chu sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 210–229 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 210 publications — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862 210
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Sung-Nee G. Chu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Sung-Nee G. Chu sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 40–41 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 41 D-Index — 2nd percentile

2% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211 41
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Research.com Recognitions

  • 2006 - Fellow of American Physical Society (APS) Citation For contributions to the development of lasers and photodiodes for optical fiber communication systems

Overview

Sung-Nee G. Chu is affiliated with AXT in the United States. Their research spans several fields of study, predominantly within Engineering and Medicine. The primary subfields of study include Electrical and Electronic Engineering, Mechanical Engineering, Materials Chemistry, Inorganic Chemistry, and Electrochemistry.

Their work addresses a variety of scientific topics such as:

  • Metal-Organic Frameworks: Synthesis and Applications
  • Electrochemical Analysis and Applications
  • Advanced battery technologies research
  • Drug-Induced Ocular Toxicity
  • Pituitary Gland Disorders and Treatments
  • Chronic Lymphocytic Leukemia Research
  • Advanced machining processes and optimization

Sung-Nee G. Chu has published across multiple peer-reviewed journals, notably:

  • Coordination Chemistry Reviews
  • American Journal of Ophthalmology Case Reports
  • The International Journal of Advanced Manufacturing Technology
  • Electrochimica Acta

Their recent publications include:

  • "Intrinsic metal organic frameworks as electro-catalysts for water splitting" (2025), Coordination Chemistry Reviews
  • "Reversible bilateral central scotoma under scotopic conditions associated with oral semaglutide" (2024), American Journal of Ophthalmology Case Reports
  • "A novel approach for assessing the wear status of a milling cutter flank based on the entropy generation of friction and thermal conduction" (2025), The International Journal of Advanced Manufacturing Technology
  • "Micro-pompon-like metal organic chalcogenides of [Fe2(6mna)2] as electrocatalyst for Cu-neocuproine mediated dye-sensitized solar cells" (2025), Electrochimica Acta

The scientist frequently collaborates with a set of co-authors, including:

  • Chih-Jung Cheng
  • Chun-Ting Li
  • Bo-Yu Han
  • Y.J. Lee
  • Ryan Yeh-Yung Lin

In 2006, Sung-Nee G. Chu was recognized as a Fellow of the American Physical Society (APS) for contributions to the development of lasers and photodiodes for optical fiber communication systems.

Best Publications

  • High power mid‐infrared (λ∼5 μm) quantum cascade lasers operating above room temperature

    Jérôme Faist;Federico Capasso;Carlo Sirtori;Deborah L. Sivco

  • Ga2O3 films for electronic and optoelectronic applications

    M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong

  • Impression creep; a new creep test

    S. N. G. Chu;J. C. M. Li

  • Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

    J. Kwo;M. Hong;A. R. Kortan;K. L. Queeney

  • Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs

    Jérôme Faist;Federico Capasso;Deborah L. Sivco;Albert L. Hutchinson

  • GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

    P. D. Ye;G. D. Wilk;B. Yang;J. Kwo

  • Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes

    H. Temkin;G. J. Dolan;M. B. Panish;S. N. G. Chu

  • Observation of an electronic bound state above a potential well

    Federico Capasso;Carlo Sirtori;Jerome Faist;Deborah L. Sivco

  • Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

    J. W. P. Hsu;M. J. Manfra;D. V. Lang;S. Richter

  • Magnetic and structural properties of Mn-implanted GaN

    N. Theodoropoulou;A. F. Hebard;M. E. Overberg;C. R. Abernathy

  • GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

    P.D. Ye;G.D. Wilk;J. Kwo;B. Yang

  • Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

    F. Ren;M. Hong;S. N. G. Chu;M. A. Marcus

  • HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA

    S. A. Nikishin;N. N. Faleev;V. G. Antipov;S. Francoeur

  • Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C.

    N. Theodoropoulou;A. F. Hebard;M. E. Overberg;C. R. Abernathy

  • Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy

    S. N. G. Chu;A. T. Macrander;K. E. Strege;W. D. Johnston

  • Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

    M. Passlack;M. Hong;J.P. Mannaerts;R.L. Opila

  • Low interface state density oxide‐GaAs structures fabricated by in situ molecular beam epitaxy

    M. Hong;M. Passlack;J. P. Mannaerts;J. Kwo

  • High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

    H. M. Ng;T. D. Moustakas;S. N. G. Chu

  • Optical transitions in quantum wires with strain-induced lateral confinement.

    D. Gershoni;J. S. Weiner;S. N. G. Chu;G. A. Baraff

  • Scattering-controlled transmission resonances and negative differential conductance by field-induced localization in superlattices.

    Fabio Beltram;Federico Capasso;Deborah L. Sivco;Albert L. Hutchinson

  • Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

    F. Ren;M. Hong;W.S. Hobson;J.M. Kuo

  • Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate

    Naresh Chand;E. E. Becker;J. P. van der Ziel;S. N. G. Chu

  • Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

    D. Gershoni;H. Temkin;G. J. Dolan;J. Dunsmuir

  • Kinetic surface roughening in molecular beam epitaxy of InP.

    M. A. Cotta;R. A. Hamm;T. W. Staley;S. N. G. Chu

  • Surface layer spinodal decomposition in In1−xGaxAsyP1−y and In1−xGaxAs grown by hydride transport vapor‐phase epitaxy

    S. N. G. Chu;S. Nakahara;K. E. Strege;W. D. Johnston

  • Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

    M. B. Panish;H. Temkin;R. A. Hamm;S. N. G. Chu

  • Critical layer thickness in strained Ga1−xInxAs/InP quantum wells

    H. Temkin;D. G. Gershoni;S. N. G. Chu;J. M. Vandenberg

  • Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

    R. E. Cavicchi;D. V. Lang;D. Gershoni;A. M. Sergent

  • Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain‐coupled optical feedback

    W. T. Tsang;F. S. Choa;M. C. Wu;Y. K. Chen

  • Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input

    J.E. Johnson;L.J.-P. Ketelsen;J.A. Grenko;S.K. Sputz

  • Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy

    H. Temkin;S. N. G. Chu;M. B. Panish;R. A. Logan

  • Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy

    T. Tanbun‐Ek;R. A. Logan;H. Temkin;K. Berthold

  • Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers

    O. Blum;M. J. Hafich;J. F. Klem;K. L. Lear

  • Type-I to type-II superlattice transition in strained layers of InxGa

    D. Gershoni;H. Temkin;J. M. Vandenberg;S. N. G. Chu

  • Chemical ordering in AlGaN alloys grown by molecular beam epitaxy

    E. Iliopoulos;K. F. Ludwig;T. D. Moustakas;S. N. G. Chu

Frequent Co-Authors

Stephen J. Pearton
Stephen J. Pearton University of Florida
Fan Ren
Fan Ren University of Florida
Minghwei Hong
Minghwei Hong National Taiwan University
Joseph Petrus Mannaerts
Joseph Petrus Mannaerts National Tsing Hua University
Alfred Y. Cho
Alfred Y. Cho Nokia (United States)
Federico Capasso
Federico Capasso Harvard University
Henryk Temkin
Henryk Temkin Texas Tech University
Morton B. Panish
Morton B. Panish Nokia (United States)
Albert L. Hutchinson
Albert L. Hutchinson Nokia (United States)
Jérôme Faist
Jérôme Faist ETH Zurich

External Links

Personal website of Sung-Nee G. Chu

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Best Scientists Citing Sung-Nee G. Chu

Minghwei Hong

Minghwei Hong

National Taiwan University

Publications: 130

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 113

J. Kwo

J. Kwo

National Tsing Hua University

Publications: 111

Fan Ren

Fan Ren

University of Florida

Publications: 95

Federico Capasso

Federico Capasso

Harvard University

Publications: 94

Jérôme Faist

Jérôme Faist

ETH Zurich

Publications: 88

Deborah L. Sivco

Deborah L. Sivco

Princeton University

Publications: 62

Claire F. Gmachl

Claire F. Gmachl

Princeton University

Publications: 59

Carlo Sirtori

Carlo Sirtori

École Normale Supérieure

Publications: 56

C. R. Abernathy

C. R. Abernathy

University of Florida

Publications: 54

Alfred Y. Cho

Alfred Y. Cho

Nokia (United States)

Publications: 51

Henryk Temkin

Henryk Temkin

Texas Tech University

Publications: 50

Joseph Petrus Mannaerts

Joseph Petrus Mannaerts

National Tsing Hua University

Publications: 45

Leonard Forbes

Leonard Forbes

L. Forbes and Associates LLC

Publications: 37

Alessandro Tredicucci

Alessandro Tredicucci

University of Pisa

Publications: 36

Albert L. Hutchinson

Albert L. Hutchinson

Nokia (United States)

Publications: 36

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