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Joseph Petrus Mannaerts

Joseph Petrus Mannaerts

D-Index & Metrics

Materials Science

D-Index
49
Citations
8865
World Ranking
10538
National Ranking
126

Overview

Joseph Petrus Mannaerts is affiliated with the National Tsing Hua University in Taiwan. Their academic career is focused on various research areas and involves contributions to scientific knowledge through publications and collaborations.

As part of their scholarly activity, Joseph Petrus Mannaerts has worked with multiple co-authors, reflecting collaboration within their research community.

  • Frequent co-authors

Their work has appeared in several publication venues, signifying engagement with diverse academic audiences and dissemination platforms.

  • Frequent publication venues

In addition to journal articles, Joseph Petrus Mannaerts has contributed to the scientific literature through book publications, indicating involvement in broader academic communication and education.

  • Book publications

The main fields of study pursued by Joseph Petrus Mannaerts encompass distinct domains within their research discipline, supplemented by investigations into specific subfields that refine their scientific focus.

  • Main fields of study

  • Subfields of study

Their research addresses a variety of main topics, illustrating the range of scientific questions and challenges they explore.

  • Main topics of work

Award recognitions have been conferred upon Joseph Petrus Mannaerts, marking acknowledgment from the academic community for their contributions.

  • Awards won

Best Publications

  • Ga2O3 films for electronic and optoelectronic applications

    M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong

  • Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation

    M. Hong;J. Kwo;A. R. Kortan;J. P. Mannaerts

  • Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

    J. Kwo;M. Hong;A. R. Kortan;K. L. Queeney

  • High ε gate dielectrics Gd2O3 and Y2O3 for silicon

    J. Kwo;M. Hong;A. R. Kortan;K. T. Queeney

  • GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

    P. D. Ye;G. D. Wilk;B. Yang;J. Kwo

  • Structurally induced optical transitions in Ge-Si superlattices.

    T. P. Pearsall;J. Bevk;L. C. Feldman;J. M. Bonar

  • GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

    P.D. Ye;G.D. Wilk;J. Kwo;B. Yang

  • Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

    M. Passlack;M. Hong;J. P. Mannaerts

  • Optical properties of gallium oxide thin films

    M. Rebien;W. Henrion;M. Hong;J. P. Mannaerts

  • Dielectric properties of electron‐beam deposited Ga2O3 films

    M. Passlack;N. E. J. Hunt;E. F. Schubert;G. J. Zydzik

  • Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

    M. Passlack;M. Hong;J.P. Mannaerts;R.L. Opila

  • Low interface state density oxide‐GaAs structures fabricated by in situ molecular beam epitaxy

    M. Hong;M. Passlack;J. P. Mannaerts;J. Kwo

  • Ga 2 O 3 (Gd 2 O 3 )/InGaAs enhancement-mode n-channel MOSFETs

    F. Ren;J.M. Kuo;M. Hong;W.S. Hobson

  • Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

    F. Ren;M. Hong;W.S. Hobson;J.M. Kuo

  • Ge-Si layered structures: Artificial crystals and complex cell ordered superlattices

    J. Bevk;J. P. Mannaerts;L. C. Feldman;B. A. Davidson

  • Electronic structure of Ge/Si monolayer strained-layer superlattices.

    TP Pearsall;J Bevk;JC Bean;J Bonar

  • Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy

    M. Passlack;M. Hong;J. P. Mannaerts;J. R. Kwo

  • Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces

    T.S. Lay;M. Hong;J. Kwo;J.P. Mannaerts

  • Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films

    J. Kwo;D. W. Murphy;M. Hong;R. L. Opila

  • Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states

    M. Hong;Z. H. Lu;J. Kwo;A. R. Kortan

Frequent Co-Authors

Minghwei Hong
Minghwei Hong National Taiwan University
J. Kwo
J. Kwo National Tsing Hua University
Fan Ren
Fan Ren University of Florida
Kent D. Choquette
Kent D. Choquette University of Illinois at Urbana-Champaign
Alfred Y. Cho
Alfred Y. Cho Nokia (United States)
Leonard C. Feldman
Leonard C. Feldman Rutgers, The State University of New Jersey
Robert L. Opila
Robert L. Opila University of Delaware
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Jenshan Lin
Jenshan Lin University of Florida

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