World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
45
Citations
9427
World Ranking
11647
National Ranking
2720

Robert L. Opila publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Robert L. Opila sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 271 publications — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Robert L. Opila D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Robert L. Opila sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Robert L. Opila is affiliated with the University of Delaware in the United States. Their research spans across several fields of study, primarily focused on Engineering and Materials Science. Within these broad areas, their work delves into subfields such as Electrical and Electronic Engineering, Materials Chemistry, Renewable Energy, Sustainability and the Environment, Atomic and Molecular Physics and Optics, and Surfaces, Coatings and Films.

The main topics of Robert L. Opila's research include advanced photocatalysis techniques, silicon and solar cell technologies, semiconductor materials and interfaces, MXene and MAX phase materials, electron and x-ray spectroscopy techniques, machine learning applications in materials science, and x-ray spectroscopy and fluorescence analysis.

Their research outputs are published in a variety of scientific venues. Frequent publication outlets for Robert L. Opila include:

  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • The Journal of Physical Chemistry Letters
  • JACS Au
  • Solar Energy Materials and Solar Cells
  • Applied Surface Science

Notable recent papers authored or coauthored by Robert L. Opila are:

  • "Perspective on improving the quality of surface and material data analysis in the scientific literature with a focus on x-ray photoelectron spectroscopy (XPS)," 2023, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Interface Catalysts of Ni3Fe1 Layered Double Hydroxide and Titanium Carbide for High-Performance Water Oxidation in Alkaline and Natural Conditions," 2023, The Journal of Physical Chemistry Letters
  • "In operando x-ray photoelectron spectroscopy study of mechanism of atomic layer etching of cobalt," 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Determining limitations of capacitance-voltage measurements of built-in voltage as an alternative to surface photovoltage for a-Si:H/c-Si heterojunctions," 2020, Solar Energy Materials and Solar Cells
  • "Imidazolium-Based Sulfonating Agent to Control the Degree of Sulfonation of Aromatic Polymers and Enable Plastics-to-Electronics Upgrading," 2024, JACS Au

Robert L. Opila has collaborated with several frequent coauthors, including Shaun Debow, Haley Fisher, Jesse B. Brown, Yanqing Su, and Zachary Zander, each of whom has coauthored three publications with Opila.

Best Publications

  • Nucleation and Growth of CdSe on ZnS Quantum Crystallite Seeds and Vice Versa, in Inverse Micelle Media

    A. R. Kortan;R. Hull;R. L. Opila;M. G. Bawendi

  • Promising thermoelectric properties of commercial PEDOT:PSS materials and their bi2Te3 powder composites.

    B. Zhang;J. Sun;H. E. Katz;F. Fang

  • Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

    J. Kwo;M. Hong;A. R. Kortan;K. L. Queeney

  • Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon

    K. T. Queeney;M. K. Weldon;J. P. Chang;Y. J. Chabal

  • Aluminum Substitution in Ba2YCu3O7

    Theo Siegrist;Lynn Schneemeyer;Joseph V. Waszczak;N. P. Singh

  • Dielectric properties of electron‐beam deposited Ga2O3 films

    M. Passlack;N. E. J. Hunt;E. F. Schubert;G. J. Zydzik

  • Bond insertion, complexation, and penetration pathways of vapor-deposited aluminum atoms with HO- and CH3O-terminated organic monolayers

    Gregory L. Fisher;Amy V. Walker;Andrew E. Hooper;Timothy B. Tighe

  • The Role of Carbonyl Groups in the Photoluminescence of Poly(p-phenylenevinylene)

    F. Papadimitrakopoulos;K. Konstadinidis;T. M. Miller;R. Opila

  • Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

    M. Passlack;M. Hong;J.P. Mannaerts;R.L. Opila

  • The interaction of vapor-deposited Al atoms with CO2H groups at the surface of a self-assembled alkanethiolate monolayer on gold

    G. L. Fisher;A. E. Hooper;R. L. Opila;D. L. Allara

  • Chemical Effects of Methyl and Methyl Ester Groups on the Nucleation and Growth of Vapor-Deposited Aluminum Films

    A. Hooper;G. L. Fisher;K. Konstadinidis;D. Jung

  • Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

    J. P. Chang;J. P. Chang;M. L. Green;V. M. Donnelly;R. L. Opila

  • Growth and structural characterization of superconducting Ba1–xKxBiO3 single crystals

    Lynn Schneemeyer;J. K. Thomas;J. K. Thomas;T. Siegrist;B. Batlogg

  • Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2

    Donald R. Baer;Mark H. Engelhard;Alan S. Lea;Ponnusamy Nachimuthu

  • An in-situ X-ray photoelectron study of the interaction between vapor-deposited Ti atoms and functional groups at the surfaces of self-assembled monolayers

    K. Konstadinidis;P. Zhang;R.L. Opila;D.L. Allara

  • Gate quality doped high K films for CMOS beyond 100 nm: 3-10 nm Al/sub 2/O/sub 3/ with low leakage and low interface states

    L. Manchanda;W.H. Lee;J.E. Bower;F.H. Baumann

  • Photoemission study of Zr- and Hf-silicates for use as high-κ oxides: Role of second nearest neighbors and interface charge

    R. L. Opila;G. D. Wilk;M. A. Alam;R. B. van Dover

  • Thermal desorption of Xe from the W(110) plane

    R. Opila;R. Gomer

  • Thin films and interfaces in microelectronics: composition and chemistry as function of depth

    Robert L Opila;Joseph Eng

  • Epitaxial growth and magnetic behavior of NiFe2O4 thin films

    S. Venzke;R. B. van Dover;Julia M. Phillips;E. M. Gyorgy

Frequent Co-Authors

Ian T. Ferguson
Ian T. Ferguson Kennesaw State University
Yves J. Chabal
Yves J. Chabal The University of Texas at Dallas
Minghwei Hong
Minghwei Hong National Taiwan University
Jane P. Chang
Jane P. Chang University of California, Los Angeles
Theo Siegrist
Theo Siegrist Florida A&M University - Florida State University College of Engineering
Joseph Petrus Mannaerts
Joseph Petrus Mannaerts National Tsing Hua University
David L. Allara
David L. Allara Pennsylvania State University
Robert Gomer
Robert Gomer University of Chicago
J. Kwo
J. Kwo National Tsing Hua University
David A. Muller
David A. Muller Cornell University

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