World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
49
Citations
8235
World Ranking
10583
National Ranking
2508

Jane P. Chang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jane P. Chang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 202 publications — 31st percentile

31% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jane P. Chang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jane P. Chang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jane P. Chang is affiliated with the University of California, Los Angeles in the United States. Their research primarily focuses on engineering and materials science, with significant contributions in electrical and electronic engineering, materials chemistry, and electronic, optical, and magnetic materials. Additionally, their work spans fields related to surgery and biomedical engineering.

Their publications cover a range of topics, prominently including semiconductor materials and devices, plasma diagnostics and applications, bladder and urothelial cancer treatments, advancements in semiconductor devices and circuit design, copper interconnects and reliability, magnetic properties and applications, and nanowire synthesis and applications.

Jane P. Chang has published extensively in several scholarly journals. Frequent publication venues include:

  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Applied Physics Letters
  • Journal of Clinical Oncology
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • ECS Meeting Abstracts

Selected recent papers authored or co-authored by Jane P. Chang comprise:

  • Future of plasma etching for microelectronics: Challenges and opportunities (2024), Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • Dry etching in the presence of physisorption of neutrals at lower temperatures (2023), Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Underlayer effect on the soft magnetic, high frequency, and magnetostrictive properties of FeGa thin films (2020), Journal of Applied Physics
  • Enhancing the soft magnetic properties of FeGa with a non-magnetic underlayer for microwave applications (2020), Applied Physics Letters
  • Physical and chemical effects in directional atomic layer etching (2020), Journal of Physics D Applied Physics

Frequent co-authors in their research collaborations include Xia Sang, Ryan Sheil, Adrian Acosta, Anthony Eccleston, and Julia Brinkmann.

Best Publications

  • Development of hafnium based high-k materials—A review

    J.H. Choi;Y. Mao;J.P. Chang

  • Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon

    K. T. Queeney;M. K. Weldon;J. P. Chang;Y. J. Chabal

  • Dielectric property and thermal stability of HfO2 on silicon

    Y.-S. Lin;R. Puthenkovilakam;J. P. Chang

  • Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

    Carey M. Tanner;Ya-Chuan Perng;Christopher Frewin;Stephen E. Saddow

  • In situ Control of Atomic-Scale Si Layer with Huge Strain in the Nanoheterostructure NiSi/Si/NiSi through Point Contact Reaction

    Kuo Chang Lu;Wen-Wei Wu;Han Wei Wu;Carey M. Tanner

  • Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine

    Jane P. Chang;John C. Arnold;Gavin C. H. Zau;Hyung-Shik Shin

  • Synthesis and Luminescence Properties of Erbium-Doped Y2O3 Nanotubes

    Yuanbing Mao;Jian Y. Huang;Roman Ostroumov;Kang L. Wang

  • First-principles exploration of alternative gate dielectrics: Electronic structure of ZrO 2 /Si and ZrSiO 4 /Si interfaces

    Ragesh Puthenkovilakam;Emily A. Carter;Jane P. Chang

  • Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

    J. P. Chang;J. P. Chang;M. L. Green;V. M. Donnelly;R. L. Opila

  • Active layer-incorporated, spectrally tuned Au/SiO2 core/shell nanorod-based light trapping for organic photovoltaics.

    Vladan Janković;Yang (Michael) Yang;Jingbi You;Letian Dou

  • Dielectric property and conduction mechanism of ultrathin zirconium oxide films

    J. P. Chang;Y.-S. Lin

  • Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon

    Jane P. Chang;Arpan P. Mahorowala;Herbert H. Sawin

  • Luminescence of Nanocrystalline Erbium-Doped Yttria

    Yuanbing Mao;Thai Tran;Xia Guo;Jian Y. Huang

  • Mechanical Shuttling of Linear Motor-Molecules in Condensed Phases on Solid Substrates

    Tony Jun Huang;Hsian Rong Tseng;Lin Sha;Weixing Lu

  • An accurate determination of barrier heights at the HfO2∕Si interfaces

    Ragesh Puthenkovilakam;Jane P. Chang

  • Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application

    Jane P. Chang;You-Sheng Lin;Karen Chu

  • Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface

    Xiang Li;Kevin Fitzell;Di Wu;Di Wu;C. Ty Karaba

  • Controlled nano-doping of ultra thin films

    Jane P. Chang;Trinh Tu Van;Tony Chiang;Chandra Deshpandey

  • Ultrathin zirconium oxide films as alternative gate dielectrics

    J. P. Chang;Y. S. Lin;S. Berger;A. Kepten

  • Valence band structure and band alignment at the ZrO2/Si interface

    Ragesh Puthenkovilakam;Jane P. Chang

  • Highly conformal ZrO2 deposition for dynamic random access memory application

    Jane P. Chang;You-Sheng Lin

  • Microfabricated thermal conductivity detector for the micro-ChemLab™

    D. Cruz;D. Cruz;J.P. Chang;S.K. Showalter;F. Gelbard

Frequent Co-Authors

Kang L. Wang
Kang L. Wang University of California, Los Angeles
Robert L. Opila
Robert L. Opila University of Delaware
John R. Bargar
John R. Bargar SLAC National Accelerator Laboratory
Yuanbing Mao
Yuanbing Mao Illinois Institute of Technology
Michael F. Toney
Michael F. Toney University of Colorado Boulder
Sarah H. Tolbert
Sarah H. Tolbert University of California, Los Angeles
Bruce Dunn
Bruce Dunn University of California, Los Angeles
Gregory P. Carman
Gregory P. Carman University of California, Los Angeles
Jun Lu
Jun Lu Zhejiang University
Kuo-Chuan Ho
Kuo-Chuan Ho National Taiwan University

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