World's Best Scientists 2026 revealed!
Seiichi Miyazaki

Seiichi Miyazaki

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
5807
World Ranking
5960
National Ranking
252

Seiichi Miyazaki publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Seiichi Miyazaki sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 624 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Seiichi Miyazaki D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Seiichi Miyazaki sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Seiichi Miyazaki is affiliated with Nagoya University in Japan and has made significant contributions to the fields of engineering, materials science, and physics and astronomy. Their research has a strong focus on electrical and electronic engineering, atomic and molecular physics and optics, as well as materials chemistry. Additional interests include biomedical engineering and the study of surfaces, coatings, and films.

The scientist's primary research topics cover a range of semiconductor and nanostructure-related subjects. These include silicon nanostructures and photoluminescence, semiconductor materials and devices, and semiconductor materials and interfaces. Their work also addresses nanowire synthesis and applications, graphene research and applications, electron and X-ray spectroscopy techniques, and silicon and solar cell technologies.

Seiichi Miyazaki has published extensively in several recognized scientific venues. Frequent publication outlets include the Japanese Journal of Applied Physics, ECS Transactions, ECS Meeting Abstracts, Materials Science in Semiconductor Processing, and Nanomaterials.

  • Japanese Journal of Applied Physics
  • ECS Transactions
  • ECS Meeting Abstracts
  • Materials Science in Semiconductor Processing
  • Nanomaterials

Miyazaki's recent published papers demonstrate ongoing research into semiconductor material phases and crystal formation. Notable works include:

  • Single germanene phase formed by segregation through Al(111) thin films on Ge(111), 2021, 2D Materials
  • Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(1 1 0) thin films on Ge(1 1 0), 2021, Applied Surface Science
  • Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface, 2020, Japanese Journal of Applied Physics
  • Formation of germanene with free-standing lattice constant, 2023, Surface Science
  • Characterization of magnesium channeled implantation layers in GaN(0001), 2023, Japanese Journal of Applied Physics

The research collaborations of Seiichi Miyazaki have involved frequent coauthors such as Katsunori Makihara, Akio Ohta, Noriyuki Taoka, Mitsuhisa Ikeda, and Yuki Imai. These collaborations indicate a consistent team effort in advancing semiconductor and materials science fields.

Best Publications

  • Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics

    Seiichi Miyazaki

  • Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces

    S. Miyazaki;H. Nishimura;M. Fukuda;L. Ley

  • Characterization of high-k gate dielectric/silicon interfaces

    Seiichi Miyazaki

  • Resonant tunneling through amorphous silicon-silicon nitride double-barrier structures.

    Seiichi Miyazaki;Yohji Ihara;Masataka Hirose

  • Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition

    S Miyazaki;Y Hamamoto;E Yoshida;M Ikeda

  • Characterization of plasma-deposited microcrystalline silicon

    Y. Mishima;S. Miyazaki;M. Hirose;Y. Osaka

  • Luminescence and transport in a-Si:H/a-Si1−xNx:H quantum well structures

    Masataka Hirose;Seiichi Miyazaki

  • Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

    M. Koh;W. Mizubayashi;K. Iwamoto;H. Murakami

  • Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

    Atsushi Kohno;Hideki Murakami;Mitsuhisa Ikeda;Seiichi Miyazaki

  • Analytic model of direct tunnel current through ultrathin gate oxides

    Khairurrijal;W. Mizubayashi;S. Miyazaki;M. Hirose

  • The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces

    Takeshi Sunada;Tatsuhiro Yasaka;Masaru Takakura;Tsutomu Sugiyama

  • Photoluminescence from anodized and thermally oxidized porous germanium

    S. Miyazaki;K. Sakamoto;K. Shiba;M. Hirose

  • Digital chemical vapor deposition and etching technologies for semiconductor processing

    Y. Horiike;T. Tanaka;M. Nakano;S. Iseda

  • Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- $k$ CMOSFETs

    M. Kadoshima;T. Matsuki;S. Miyazaki;K. Shiraishi

  • Physical model of BTI, TDDB and SILC in HfO/sub 2/-based high-k gate dielectrics

    K. Torii;H. Kitajima;T. Arikado;K. Shiraishi

  • Quantitative analysis of tunneling current through ultrathin gate oxides

    Takeshi Yoshida;Daisuke Imafuku;Josep Lluis Alay;Seiichi Miyazaki

  • Analysis of Tunnel Current through Ultrathin Gate Oxides

    Masatoshi Fukuda;Wataru Mizubayashi;Atsushi Kohno;Seiichi Miyazaki

  • Native Oxidation Growth on Ge(111) and (100) Surfaces

    Siti Kudnie Sahari;Hideki Murakami;Tomohiro Fujioka;Tatsuya Bando

  • Praseodymium silicate formed by postdeposition high-temperature annealing

    Akira Sakai;Shinsuke Sakashita;Mitsuo Sakashita;Yukio Yasuda

  • Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation

    Akio Ohta;Hiroshi Nakagawa;Hideki Murakami;Seiichirou Higashi

  • Fundamental limit of gate oxide thickness scaling in advanced MOSFETs

    M Hirose;M Koh;W Mizubayashi;H Murakami

  • Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories

    Mitsuhisa Ikeda;Yusuke Shimizu;Hideki Murakami;Seiichi Miyazaki

  • Photoelectron spectroscopy of ultrathin Yttrium Oxide films on Si(100)

    A. Ohta;M. Yamaoka;S. Miyazaki

  • Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces

    Masahito Hiroshima;Tatsuhiro Yasaka;Seiichi Miyazaki;Masataka Hirose

  • Characterization of ultrathin zirconium oxide films on silicon using photoelectron spectroscopy

    S Miyazaki;M Narasaki;M Ogasawara;M Hirose

  • High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits

    Jun–ichi Maeda;Yasushi Sasaki;Nikolaus Dietz;Kentaro Shibahara

  • Amorphous Silicon Superlattice Thin Film Transistors

    Masaki Tsukude;Susumu Akamatsu;Seiichi Miyazaki;Masataka Hirose

Frequent Co-Authors

Kenji Shiraishi
Kenji Shiraishi Nagoya University
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science
Akira Uedono
Akira Uedono University of Tsukuba
Naoto Umezawa
Naoto Umezawa Samsung (South Korea)
Tetsuo Endoh
Tetsuo Endoh Tohoku University
Mitsumasa Koyanagi
Mitsumasa Koyanagi Tohoku University
Kunji Chen
Kunji Chen Nanjing University
Satoshi Kamiyama
Satoshi Kamiyama Meijo University
Lothar Ley
Lothar Ley University of Erlangen-Nuremberg
Kiyotaka Asakura
Kiyotaka Asakura Hokkaido University

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