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Seiichi Miyazaki

Seiichi Miyazaki

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
5807
World Ranking
5960
National Ranking
252

Overview

Seiichi Miyazaki is affiliated with Nagoya University in Japan and has made significant contributions to the fields of engineering, materials science, and physics and astronomy. Their research has a strong focus on electrical and electronic engineering, atomic and molecular physics and optics, as well as materials chemistry. Additional interests include biomedical engineering and the study of surfaces, coatings, and films.

The scientist's primary research topics cover a range of semiconductor and nanostructure-related subjects. These include silicon nanostructures and photoluminescence, semiconductor materials and devices, and semiconductor materials and interfaces. Their work also addresses nanowire synthesis and applications, graphene research and applications, electron and X-ray spectroscopy techniques, and silicon and solar cell technologies.

Seiichi Miyazaki has published extensively in several recognized scientific venues. Frequent publication outlets include the Japanese Journal of Applied Physics, ECS Transactions, ECS Meeting Abstracts, Materials Science in Semiconductor Processing, and Nanomaterials.

  • Japanese Journal of Applied Physics
  • ECS Transactions
  • ECS Meeting Abstracts
  • Materials Science in Semiconductor Processing
  • Nanomaterials

Miyazaki's recent published papers demonstrate ongoing research into semiconductor material phases and crystal formation. Notable works include:

  • Single germanene phase formed by segregation through Al(111) thin films on Ge(111), 2021, 2D Materials
  • Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(1 1 0) thin films on Ge(1 1 0), 2021, Applied Surface Science
  • Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface, 2020, Japanese Journal of Applied Physics
  • Formation of germanene with free-standing lattice constant, 2023, Surface Science
  • Characterization of magnesium channeled implantation layers in GaN(0001), 2023, Japanese Journal of Applied Physics

The research collaborations of Seiichi Miyazaki have involved frequent coauthors such as Katsunori Makihara, Akio Ohta, Noriyuki Taoka, Mitsuhisa Ikeda, and Yuki Imai. These collaborations indicate a consistent team effort in advancing semiconductor and materials science fields.

Best Publications

  • Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics

    Seiichi Miyazaki

  • Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces

    S. Miyazaki;H. Nishimura;M. Fukuda;L. Ley

  • Characterization of high-k gate dielectric/silicon interfaces

    Seiichi Miyazaki

  • Resonant tunneling through amorphous silicon-silicon nitride double-barrier structures.

    Seiichi Miyazaki;Yohji Ihara;Masataka Hirose

  • Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition

    S Miyazaki;Y Hamamoto;E Yoshida;M Ikeda

  • Characterization of plasma-deposited microcrystalline silicon

    Y. Mishima;S. Miyazaki;M. Hirose;Y. Osaka

  • Luminescence and transport in a-Si:H/a-Si1−xNx:H quantum well structures

    Masataka Hirose;Seiichi Miyazaki

  • Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

    M. Koh;W. Mizubayashi;K. Iwamoto;H. Murakami

  • Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

    Atsushi Kohno;Hideki Murakami;Mitsuhisa Ikeda;Seiichi Miyazaki

  • Analytic model of direct tunnel current through ultrathin gate oxides

    Khairurrijal;W. Mizubayashi;S. Miyazaki;M. Hirose

  • The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces

    Takeshi Sunada;Tatsuhiro Yasaka;Masaru Takakura;Tsutomu Sugiyama

  • Photoluminescence from anodized and thermally oxidized porous germanium

    S. Miyazaki;K. Sakamoto;K. Shiba;M. Hirose

  • Digital chemical vapor deposition and etching technologies for semiconductor processing

    Y. Horiike;T. Tanaka;M. Nakano;S. Iseda

  • Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- $k$ CMOSFETs

    M. Kadoshima;T. Matsuki;S. Miyazaki;K. Shiraishi

  • Physical model of BTI, TDDB and SILC in HfO/sub 2/-based high-k gate dielectrics

    K. Torii;H. Kitajima;T. Arikado;K. Shiraishi

  • Quantitative analysis of tunneling current through ultrathin gate oxides

    Takeshi Yoshida;Daisuke Imafuku;Josep Lluis Alay;Seiichi Miyazaki

  • Analysis of Tunnel Current through Ultrathin Gate Oxides

    Masatoshi Fukuda;Wataru Mizubayashi;Atsushi Kohno;Seiichi Miyazaki

  • Native Oxidation Growth on Ge(111) and (100) Surfaces

    Siti Kudnie Sahari;Hideki Murakami;Tomohiro Fujioka;Tatsuya Bando

  • Praseodymium silicate formed by postdeposition high-temperature annealing

    Akira Sakai;Shinsuke Sakashita;Mitsuo Sakashita;Yukio Yasuda

  • Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation

    Akio Ohta;Hiroshi Nakagawa;Hideki Murakami;Seiichirou Higashi

  • Fundamental limit of gate oxide thickness scaling in advanced MOSFETs

    M Hirose;M Koh;W Mizubayashi;H Murakami

  • Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories

    Mitsuhisa Ikeda;Yusuke Shimizu;Hideki Murakami;Seiichi Miyazaki

  • Photoelectron spectroscopy of ultrathin Yttrium Oxide films on Si(100)

    A. Ohta;M. Yamaoka;S. Miyazaki

  • Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces

    Masahito Hiroshima;Tatsuhiro Yasaka;Seiichi Miyazaki;Masataka Hirose

  • Characterization of ultrathin zirconium oxide films on silicon using photoelectron spectroscopy

    S Miyazaki;M Narasaki;M Ogasawara;M Hirose

  • High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits

    Jun–ichi Maeda;Yasushi Sasaki;Nikolaus Dietz;Kentaro Shibahara

  • Amorphous Silicon Superlattice Thin Film Transistors

    Masaki Tsukude;Susumu Akamatsu;Seiichi Miyazaki;Masataka Hirose

Frequent Co-Authors

Kenji Shiraishi
Kenji Shiraishi Nagoya University
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science
Naoto Umezawa
Naoto Umezawa Samsung (South Korea)
Akira Uedono
Akira Uedono University of Tsukuba
Tetsuo Endoh
Tetsuo Endoh Tohoku University
Mitsumasa Koyanagi
Mitsumasa Koyanagi Tohoku University
Kunji Chen
Kunji Chen Nanjing University
Satoshi Kamiyama
Satoshi Kamiyama Meijo University
Lothar Ley
Lothar Ley University of Erlangen-Nuremberg
Noritaka Usami
Noritaka Usami Nagoya University

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