World's Best Scientists 2026 revealed!
Akira Toriumi

Akira Toriumi

D-Index & Metrics

Materials Science

D-Index
68
Citations
16953
World Ranking
4840
National Ranking
231

Akira Toriumi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Akira Toriumi sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 738 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Akira Toriumi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Akira Toriumi sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 68 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Akira Toriumi is affiliated with the University of Tokyo in Japan and has contributed extensively to research in the fields of engineering and materials science. Their work spans several subfields, including electrical and electronic engineering, materials chemistry, polymers and plastics, civil and structural engineering, and atomic and molecular physics and optics.

Toriumi's research focuses primarily on advanced topics within semiconductor materials and devices, ferroelectric and negative capacitance devices, MXene and MAX phase materials, and advanced memory and neural computing. Additional key topics include transition metal oxide nanomaterials, ferroelectric and piezoelectric materials, as well as the electronic and structural properties of oxides.

Frequent publication venues featuring Toriumi's work include:

  • Applied Physics Letters
  • Applied Physics Express
  • Advanced Electronic Materials
  • APL Materials
  • Nature Communications

Notable recent papers authored or coauthored by Toriumi cover a range of subjects related to ferroelectric materials and devices. These include:

  • Roadmap on ferroelectric hafnia- and zirconia-based materials and devices, 2023, APL Materials
  • Polarization switching in thin doped HfO2 ferroelectric layers, 2020, Applied Physics Letters
  • Accelerated ferroelectric phase transformation in HfO2/ZrO2 nanolaminates, 2021, Applied Physics Express
  • Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack, 2020, Nature Communications
  • Modulation of VO2 Metal-Insulator Transition by Ferroelectric HfO2 Gate Insulator, 2020, Advanced Electronic Materials

Toriumi has also contributed to book publications, including a 2021 title named Material Engineering and Manufacturing IV, published by Trans Tech Publications Ltd. eBooks.

Collaborations are a significant aspect of Toriumi's research output. Frequent coauthors include Takeaki Yajima, Tomonori Nishimura, Shinji Migita, Takahisa Tanaka, and Michael Hoffmann.

The combination of diverse subfields and interrelated research topics demonstrates Toriumi's integration of materials science and engineering principles, particularly in the development and understanding of ferroelectric materials and semiconductor technologies.

Best Publications

  • Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

    T. Mizuno;J. Okumtura;A. Toriumi

  • Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

    Tomonori Nishimura;Koji Kita;Akira Toriumi

  • Origin of electric dipoles formed at high-k/SiO2 interface

    Koji Kita;Akira Toriumi

  • Contact resistivity and current flow path at metal/graphene contact

    K. Nagashio;T. Nishimura;K. Kita;A. Toriumi

  • Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics

    Choong Hyun Lee;Toshiyuki Tabata;Tomonori Nishimura;Kosuke Nagashio

  • Dielectric constant enhancement due to Si incorporation into HfO2

    Kazuyuki Tomida;Koji Kita;Akira Toriumi

  • Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal?Insulator?Semiconductor Characteristics

    Koji Kita;Sho Suzuki;Hideyuki Nomura;Toshitake Takahashi

  • A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

    Tomonori Nishimura;Koji Kita;Akira Toriumi

  • Chemical structure of the ultrathin SiO 2 / S i ( 100 ) interface: An angle-resolved Si 2 p photoemission study

    J. H. Oh;H. W. Yeom;Y. Hagimoto;K. Ono

  • A study of photon emission from n-channel MOSFET's

    A. Toriumi;M. Yoshimi;M. Iwase;Y. Akiyama

  • Permittivity increase of yttrium-doped HfO2 through structural phase transformation

    Koji Kita;Kentaro Kyuno;Akira Toriumi

  • Electrical transport properties of graphene on SiO2 with specific surface structures

    K. Nagashio;T. Yamashita;T. Nishimura;K. Kita

  • Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance

    K. Nagashio;T. Nishimura;K. Kita;A. Toriumi

  • Experimental evidence of inelastic tunneling in stress-induced leakage current

    S. Takagi;N. Yasuda;A. Toriumi

  • Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

    Xuan Tian;Shigehisa Shibayama;Tomonori Nishimura;Takeaki Yajima

  • Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

    Yi Zhao;Masahiro Toyama;Koji Kita;Kentaro Kyuno

  • Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

    Kunihiko Iwamoto;Yuuichi Kamimuta;Arito Ogawa;Yukimune Watanabe

  • Desorption kinetics of GeO from GeO2/Ge structure

    Sheng Kai Wang;Koji Kita;Choong Hyun Lee;Toshiyuki Tabata

  • Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

    Lun Xu;Tomonori Nishimura;Shigehisa Shibayama;Takeaki Yajima

  • Quantitative understanding of inversion-layer capacitance in Si MOSFET's

    S. Takagi;A. Toriumi

  • Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

    Y. Yamamoto;K. Kita;K. Kyuno;A. Toriumi

  • Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key (Invited Paper)

    Akira Toriumi;Toshiyuki Tabata;Choong Hyun Lee;Tomonori Nishimura

  • On the universality of inversion-layer mobility in n- and p-channel MOSFETs

    S. Takagi;M. Iwase;A. Toriumi

Frequent Co-Authors

Junji Koga
Junji Koga Toshiba (Japan)
Shinichi Takagi
Shinichi Takagi University of Tokyo
Georg Kresse
Georg Kresse University of Vienna
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Li Qiang Zhu
Li Qiang Zhu Ningbo University
Kazuhiko Endo
Kazuhiko Endo National Institute of Advanced Industrial Science and Technology
Shoji Tanaka
Shoji Tanaka Sophia University
Junlei Qi
Junlei Qi Harbin Institute of Technology
Masaharu Oshima
Masaharu Oshima University of Tokyo

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