His scientific interests lie mostly in Optoelectronics, Analytical chemistry, Condensed matter physics, High-κ dielectric and Dielectric. His Optoelectronics study integrates concerns from other disciplines, such as Field-effect transistor, Gate oxide and Capacitor. His Analytical chemistry study combines topics in areas such as Layer, Atomic layer deposition, Amorphous solid and Corundum.
Akira Toriumi has researched Condensed matter physics in several fields, including Electrical resistivity and conductivity, Electrode, Contact resistance, MOSFET and Graphene. His High-κ dielectric research integrates issues from Composite material, Void, Dipole, Torr and Thermal stability. Akira Toriumi works mostly in the field of Dielectric, limiting it down to concerns involving Equivalent oxide thickness and, occasionally, Metal–insulator transition, Capacitive coupling and Capacitance.
Akira Toriumi spends much of his time researching Optoelectronics, Nanotechnology, Condensed matter physics, Dielectric and Analytical chemistry. His research in Optoelectronics focuses on subjects like Gate stack, which are connected to Kinetics. His work carried out in the field of Condensed matter physics brings together such families of science as Field-effect transistor, Metal and Fermi level pinning.
His Dielectric research incorporates themes from Gate dielectric and Capacitor. The Analytical chemistry study combines topics in areas such as Annealing and Silicon. He interconnects Layer and CMOS in the investigation of issues within Germanium.
Optoelectronics, Ferroelectricity, Condensed matter physics, Germanium and Doping are his primary areas of study. His Optoelectronics study combines topics from a wide range of disciplines, such as Transistor, Gate stack, Nanotechnology and Metal–insulator transition. His study with Ferroelectricity involves better knowledge in Dielectric.
His studies deal with areas such as Subthreshold conduction and Capacitor as well as Dielectric. His Condensed matter physics research is multidisciplinary, incorporating perspectives in Amorphous solid, Annealing and Metal. His Germanium study incorporates themes from CMOS and Thermal oxidation.
Akira Toriumi mostly deals with Ferroelectricity, Optoelectronics, Condensed matter physics, Negative impedance converter and Transistor. His research on Ferroelectricity concerns the broader Dielectric. His work on CMOS as part of general Optoelectronics research is often related to Communication channel, thus linking different fields of science.
His research in Condensed matter physics intersects with topics in High-κ dielectric, Instability, Amorphous solid, Metal and Germanium. His study in Metal is interdisciplinary in nature, drawing from both Annealing, Semiconductor properties, Semiconductor, Ohmic contact and Schottky barrier. He has included themes like Dispersion, Hysteresis and Graphene in his Transistor study.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
Tomonori Nishimura;Koji Kita;Akira Toriumi.
Applied Physics Letters (2007)
Origin of electric dipoles formed at high-k/SiO2 interface
Koji Kita;Akira Toriumi.
Applied Physics Letters (2009)
Contact resistivity and current flow path at metal/graphene contact
K. Nagashio;T. Nishimura;K. Kita;A. Toriumi.
Applied Physics Letters (2010)
A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
Tomonori Nishimura;Koji Kita;Akira Toriumi.
Applied Physics Express (2008)
Dielectric constant enhancement due to Si incorporation into HfO2
Kazuyuki Tomida;Koji Kita;Akira Toriumi.
Applied Physics Letters (2006)
Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal?Insulator?Semiconductor Characteristics
Koji Kita;Sho Suzuki;Hideyuki Nomura;Toshitake Takahashi.
Japanese Journal of Applied Physics (2008)
Permittivity increase of yttrium-doped HfO2 through structural phase transformation
Koji Kita;Kentaro Kyuno;Akira Toriumi.
Applied Physics Letters (2005)
Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance
K. Nagashio;T. Nishimura;K. Kita;A. Toriumi.
international electron devices meeting (2009)
Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon
Yi Zhao;Masahiro Toyama;Koji Kita;Kentaro Kyuno.
Applied Physics Letters (2006)
Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface
Kunihiko Iwamoto;Yuuichi Kamimuta;Arito Ogawa;Yukimune Watanabe.
Applied Physics Letters (2008)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
Toshiba (Japan)
University of Tokyo
University of Vienna
Namlab gGmbH
Ningbo University
University of Tokyo
Namlab GmbH
National Institute of Advanced Industrial Science and Technology
Nagoya University
University of Tokyo
Oak Ridge National Laboratory
Heidelberg University
Huazhong Agricultural University
University of Reading
Vanderbilt University
Kyoto University
University of Liverpool
University of Bern
Spanish National Research Council
National Oceanic and Atmospheric Administration
University of Sussex
Kennedy Krieger Institute
Kaiser Permanente
University of Oxford
Zayed University
Loyola University Chicago