D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 55 Citations 10,375 578 World Ranking 5685 National Ranking 337

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

His scientific interests lie mostly in Optoelectronics, Analytical chemistry, Condensed matter physics, High-κ dielectric and Dielectric. His Optoelectronics study integrates concerns from other disciplines, such as Field-effect transistor, Gate oxide and Capacitor. His Analytical chemistry study combines topics in areas such as Layer, Atomic layer deposition, Amorphous solid and Corundum.

Akira Toriumi has researched Condensed matter physics in several fields, including Electrical resistivity and conductivity, Electrode, Contact resistance, MOSFET and Graphene. His High-κ dielectric research integrates issues from Composite material, Void, Dipole, Torr and Thermal stability. Akira Toriumi works mostly in the field of Dielectric, limiting it down to concerns involving Equivalent oxide thickness and, occasionally, Metal–insulator transition, Capacitive coupling and Capacitance.

His most cited work include:

  • Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface (326 citations)
  • Contact resistivity and current flow path at metal/graphene contact (264 citations)
  • Origin of electric dipoles formed at high-k/SiO2 interface (226 citations)

What are the main themes of his work throughout his whole career to date?

Akira Toriumi spends much of his time researching Optoelectronics, Nanotechnology, Condensed matter physics, Dielectric and Analytical chemistry. His research in Optoelectronics focuses on subjects like Gate stack, which are connected to Kinetics. His work carried out in the field of Condensed matter physics brings together such families of science as Field-effect transistor, Metal and Fermi level pinning.

His Dielectric research incorporates themes from Gate dielectric and Capacitor. The Analytical chemistry study combines topics in areas such as Annealing and Silicon. He interconnects Layer and CMOS in the investigation of issues within Germanium.

He most often published in these fields:

  • Optoelectronics (44.08%)
  • Nanotechnology (19.94%)
  • Condensed matter physics (20.58%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (44.08%)
  • Ferroelectricity (11.51%)
  • Condensed matter physics (20.58%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Ferroelectricity, Condensed matter physics, Germanium and Doping are his primary areas of study. His Optoelectronics study combines topics from a wide range of disciplines, such as Transistor, Gate stack, Nanotechnology and Metal–insulator transition. His study with Ferroelectricity involves better knowledge in Dielectric.

His studies deal with areas such as Subthreshold conduction and Capacitor as well as Dielectric. His Condensed matter physics research is multidisciplinary, incorporating perspectives in Amorphous solid, Annealing and Metal. His Germanium study incorporates themes from CMOS and Thermal oxidation.

Between 2015 and 2021, his most popular works were:

  • Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm (70 citations)
  • Kinetic pathway of the ferroelectric phase formation in doped HfO2 films (67 citations)
  • Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration (53 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

Akira Toriumi mostly deals with Ferroelectricity, Optoelectronics, Condensed matter physics, Negative impedance converter and Transistor. His research on Ferroelectricity concerns the broader Dielectric. His work on CMOS as part of general Optoelectronics research is often related to Communication channel, thus linking different fields of science.

His research in Condensed matter physics intersects with topics in High-κ dielectric, Instability, Amorphous solid, Metal and Germanium. His study in Metal is interdisciplinary in nature, drawing from both Annealing, Semiconductor properties, Semiconductor, Ohmic contact and Schottky barrier. He has included themes like Dispersion, Hysteresis and Graphene in his Transistor study.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

Tomonori Nishimura;Koji Kita;Akira Toriumi.
Applied Physics Letters (2007)

521 Citations

Origin of electric dipoles formed at high-k/SiO2 interface

Koji Kita;Akira Toriumi.
Applied Physics Letters (2009)

377 Citations

Contact resistivity and current flow path at metal/graphene contact

K. Nagashio;T. Nishimura;K. Kita;A. Toriumi.
Applied Physics Letters (2010)

372 Citations

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

Tomonori Nishimura;Koji Kita;Akira Toriumi.
Applied Physics Express (2008)

247 Citations

Dielectric constant enhancement due to Si incorporation into HfO2

Kazuyuki Tomida;Koji Kita;Akira Toriumi.
Applied Physics Letters (2006)

246 Citations

Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal?Insulator?Semiconductor Characteristics

Koji Kita;Sho Suzuki;Hideyuki Nomura;Toshitake Takahashi.
Japanese Journal of Applied Physics (2008)

243 Citations

Permittivity increase of yttrium-doped HfO2 through structural phase transformation

Koji Kita;Kentaro Kyuno;Akira Toriumi.
Applied Physics Letters (2005)

219 Citations

Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance

K. Nagashio;T. Nishimura;K. Kita;A. Toriumi.
international electron devices meeting (2009)

214 Citations

Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

Yi Zhao;Masahiro Toyama;Koji Kita;Kentaro Kyuno.
Applied Physics Letters (2006)

212 Citations

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

Kunihiko Iwamoto;Yuuichi Kamimuta;Arito Ogawa;Yukimune Watanabe.
Applied Physics Letters (2008)

189 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Akira Toriumi

Shinichi Takagi

Shinichi Takagi

University of Tokyo

Publications: 78

Mitsuru Takenaka

Mitsuru Takenaka

University of Tokyo

Publications: 53

Rui Zhang

Rui Zhang

National University of Singapore

Publications: 47

Thomas Mikolajick

Thomas Mikolajick

Namlab GmbH

Publications: 45

John Robertson

John Robertson

University of Cambridge

Publications: 41

Cheol Seong Hwang

Cheol Seong Hwang

Seoul National University

Publications: 37

Masanobu Miyao

Masanobu Miyao

Kyushu University

Publications: 36

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 35

Leonard Forbes

Leonard Forbes

L. Forbes and Associates LLC

Publications: 35

Hiroshi Iwai

Hiroshi Iwai

Tokyo Institute of Technology

Publications: 34

Krishna C. Saraswat

Krishna C. Saraswat

Stanford University

Publications: 32

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 32

Uwe Schroeder

Uwe Schroeder

Namlab gGmbH

Publications: 31

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 29

Byung Jin Cho

Byung Jin Cho

Korea Advanced Institute of Science and Technology

Publications: 27

Naoto Horiguchi

Naoto Horiguchi

Imec

Publications: 25

Trending Scientists

David J. Wesolowski

David J. Wesolowski

Oak Ridge National Laboratory

Joachim Wittbrodt

Joachim Wittbrodt

Heidelberg University

Qifa Zhang

Qifa Zhang

Huazhong Agricultural University

Tim Wheeler

Tim Wheeler

University of Reading

Cynthia A. Reinhart-King

Cynthia A. Reinhart-King

Vanderbilt University

Michiyuki Maeda

Michiyuki Maeda

Kyoto University

George Bou-Gharios

George Bou-Gharios

University of Liverpool

Vincent Perreten

Vincent Perreten

University of Bern

Fiz F. Pérez

Fiz F. Pérez

Spanish National Research Council

Kenneth C. Aikin

Kenneth C. Aikin

National Oceanic and Atmospheric Administration

Andy P. Field

Andy P. Field

University of Sussex

Peter C.M. van Zijl

Peter C.M. van Zijl

Kennedy Krieger Institute

Gary D. Friedman

Gary D. Friedman

Kaiser Permanente

Charles Vincent

Charles Vincent

University of Oxford

Dong-Hee Shin

Dong-Hee Shin

Zayed University

Arup Varma

Arup Varma

Loyola University Chicago

Something went wrong. Please try again later.