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Akira Toriumi

Akira Toriumi

University of Tokyo
Japan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 68 4840 4684 231 227 738 16953

Akira Toriumi publications per year

The chart shows the history of publications by Akira Toriumi between 1980 and 2023, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Akira Toriumi published across 44 years, from 1980 to 2023, averaging 16.9 papers a year. Output peaked at 53 publications in 2018. 2 of the 743 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 1980 to 2023. Vertical axis: number of publications, 0 to 53. Peak 53 publications in 2018. 1980: 1 publication 1981: 2 publications 1982: 0 publications 1983: 0 publications 1984: 1 publication 1985: 1 publication 1986: 2 publications 1987: 3 publications 1988: 3 publications 1989: 4 publications 1990: 2 publications 1991: 2 publications 1992: 6 publications 1993: 5 publications 1994: 12 publications 1995: 7 publications 1996: 12 publications 1997: 9 publications 1998: 7 publications 1999: 15 publications 2000: 19 publications 2001: 11 publications 2002: 18 publications 2003: 33 publications 2004: 32 publications 2005: 39 publications 2006: 31 publications 2007: 36 publications 2008: 31 publications 2009: 29 publications 2010: 30 publications 2011: 29 publications 2012: 25 publications 2013: 36 publications 2014: 33 publications 2015: 36 publications 2016: 50 publications 2017: 40 publications 2018: 53 publications 2019: 24 publications 2020: 10 publications 2021: 2 publications 2022: 0 publications 2023: 2 publications
1980 2023

743 publications in total across all disciplines

View publications per year as a table
Akira Toriumi: publications per year, 1980 to 2023
Year Publications
1980 1
1981 2
1982 0
1983 0
1984 1
1985 1
1986 2
1987 3
1988 3
1989 4
1990 2
1991 2
1992 6
1993 5
1994 12
1995 7
1996 12
1997 9
1998 7
1999 15
2000 19
2001 11
2002 18
2003 33
2004 32
2005 39
2006 31
2007 36
2008 31
2009 29
2010 30
2011 29
2012 25
2013 36
2014 33
2015 36
2016 50
2017 40
2018 53
2019 24
2020 10
2021 2
2022 0
2023 2
Total 743
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Akira Toriumi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Akira Toriumi sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 730–749 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 738 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38 738
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Akira Toriumi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Akira Toriumi sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 68–69 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 68 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469 68
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Akira Toriumi is affiliated with the University of Tokyo in Japan and has contributed extensively to research in the fields of engineering and materials science. Their work spans several subfields, including electrical and electronic engineering, materials chemistry, polymers and plastics, civil and structural engineering, and atomic and molecular physics and optics.

Toriumi's research focuses primarily on advanced topics within semiconductor materials and devices, ferroelectric and negative capacitance devices, MXene and MAX phase materials, and advanced memory and neural computing. Additional key topics include transition metal oxide nanomaterials, ferroelectric and piezoelectric materials, as well as the electronic and structural properties of oxides.

Frequent publication venues featuring Toriumi's work include:

  • Applied Physics Letters
  • Applied Physics Express
  • Advanced Electronic Materials
  • APL Materials
  • Nature Communications

Notable recent papers authored or coauthored by Toriumi cover a range of subjects related to ferroelectric materials and devices. These include:

  • Roadmap on ferroelectric hafnia- and zirconia-based materials and devices, 2023, APL Materials
  • Polarization switching in thin doped HfO2 ferroelectric layers, 2020, Applied Physics Letters
  • Accelerated ferroelectric phase transformation in HfO2/ZrO2 nanolaminates, 2021, Applied Physics Express
  • Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack, 2020, Nature Communications
  • Modulation of VO2 Metal-Insulator Transition by Ferroelectric HfO2 Gate Insulator, 2020, Advanced Electronic Materials

Toriumi has also contributed to book publications, including a 2021 title named Material Engineering and Manufacturing IV, published by Trans Tech Publications Ltd. eBooks.

Collaborations are a significant aspect of Toriumi's research output. Frequent coauthors include Takeaki Yajima, Tomonori Nishimura, Shinji Migita, Takahisa Tanaka, and Michael Hoffmann.

The combination of diverse subfields and interrelated research topics demonstrates Toriumi's integration of materials science and engineering principles, particularly in the development and understanding of ferroelectric materials and semiconductor technologies.

Best Publications

  • Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

    T. Mizuno;J. Okumtura;A. Toriumi

  • Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

    Tomonori Nishimura;Koji Kita;Akira Toriumi

  • Origin of electric dipoles formed at high-k/SiO2 interface

    Koji Kita;Akira Toriumi

  • Contact resistivity and current flow path at metal/graphene contact

    K. Nagashio;T. Nishimura;K. Kita;A. Toriumi

  • Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics

    Choong Hyun Lee;Toshiyuki Tabata;Tomonori Nishimura;Kosuke Nagashio

  • Dielectric constant enhancement due to Si incorporation into HfO2

    Kazuyuki Tomida;Koji Kita;Akira Toriumi

  • Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal?Insulator?Semiconductor Characteristics

    Koji Kita;Sho Suzuki;Hideyuki Nomura;Toshitake Takahashi

  • A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

    Tomonori Nishimura;Koji Kita;Akira Toriumi

  • Chemical structure of the ultrathin SiO 2 / S i ( 100 ) interface: An angle-resolved Si 2 p photoemission study

    J. H. Oh;H. W. Yeom;Y. Hagimoto;K. Ono

  • A study of photon emission from n-channel MOSFET's

    A. Toriumi;M. Yoshimi;M. Iwase;Y. Akiyama

  • Permittivity increase of yttrium-doped HfO2 through structural phase transformation

    Koji Kita;Kentaro Kyuno;Akira Toriumi

  • Electrical transport properties of graphene on SiO2 with specific surface structures

    K. Nagashio;T. Yamashita;T. Nishimura;K. Kita

  • Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance

    K. Nagashio;T. Nishimura;K. Kita;A. Toriumi

  • Experimental evidence of inelastic tunneling in stress-induced leakage current

    S. Takagi;N. Yasuda;A. Toriumi

  • Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

    Xuan Tian;Shigehisa Shibayama;Tomonori Nishimura;Takeaki Yajima

  • Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

    Yi Zhao;Masahiro Toyama;Koji Kita;Kentaro Kyuno

  • Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

    Kunihiko Iwamoto;Yuuichi Kamimuta;Arito Ogawa;Yukimune Watanabe

  • Desorption kinetics of GeO from GeO2/Ge structure

    Sheng Kai Wang;Koji Kita;Choong Hyun Lee;Toshiyuki Tabata

  • Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

    Lun Xu;Tomonori Nishimura;Shigehisa Shibayama;Takeaki Yajima

  • Quantitative understanding of inversion-layer capacitance in Si MOSFET's

    S. Takagi;A. Toriumi

  • Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

    Y. Yamamoto;K. Kita;K. Kyuno;A. Toriumi

  • Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key (Invited Paper)

    Akira Toriumi;Toshiyuki Tabata;Choong Hyun Lee;Tomonori Nishimura

  • On the universality of inversion-layer mobility in n- and p-channel MOSFETs

    S. Takagi;M. Iwase;A. Toriumi

Frequent Co-Authors

Junji Koga
Junji Koga Toshiba (Japan)
Shinichi Takagi
Shinichi Takagi University of Tokyo
Georg Kresse
Georg Kresse University of Vienna
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Li Qiang Zhu
Li Qiang Zhu Ningbo University
Kazuhiko Endo
Kazuhiko Endo National Institute of Advanced Industrial Science and Technology
Shoji Tanaka
Shoji Tanaka Sophia University
Thomas Mikolajick
Thomas Mikolajick TU Dresden
Junlei Qi
Junlei Qi Harbin Institute of Technology
Masaharu Oshima
Masaharu Oshima University of Tokyo

External Links

Wikipedia of Akira Toriumi Personal website of Akira Toriumi

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Best Scientists Citing Akira Toriumi

Shinichi Takagi

Shinichi Takagi

University of Tokyo

Publications: 78

Mitsuru Takenaka

Mitsuru Takenaka

University of Tokyo

Publications: 53

Rui Zhang

Rui Zhang

National University of Singapore

Publications: 47

Thomas Mikolajick

Thomas Mikolajick

TU Dresden

Publications: 45

John Robertson

John Robertson

University of Cambridge

Publications: 41

Cheol Seong Hwang

Cheol Seong Hwang

Seoul National University

Publications: 37

Masanobu Miyao

Masanobu Miyao

Kyushu University

Publications: 36

Leonard Forbes

Leonard Forbes

L. Forbes and Associates LLC

Publications: 35

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 35

Hiroshi Iwai

Hiroshi Iwai

Tokyo Institute of Technology

Publications: 34

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 32

Krishna C. Saraswat

Krishna C. Saraswat

Stanford University

Publications: 32

Uwe Schroeder

Uwe Schroeder

Namlab gGmbH

Publications: 31

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 29

Min Hyuk Park

Min Hyuk Park

Seoul National University

Publications: 28

Toyohiro Chikyow

Toyohiro Chikyow

National Institute for Materials Science

Publications: 27

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