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Akira Toriumi

Akira Toriumi

D-Index & Metrics

Materials Science

D-Index
68
Citations
16953
World Ranking
4842
National Ranking
231

Overview

Akira Toriumi is affiliated with the University of Tokyo in Japan and has contributed extensively to research in the fields of engineering and materials science. Their work spans several subfields, including electrical and electronic engineering, materials chemistry, polymers and plastics, civil and structural engineering, and atomic and molecular physics and optics.

Toriumi's research focuses primarily on advanced topics within semiconductor materials and devices, ferroelectric and negative capacitance devices, MXene and MAX phase materials, and advanced memory and neural computing. Additional key topics include transition metal oxide nanomaterials, ferroelectric and piezoelectric materials, as well as the electronic and structural properties of oxides.

Frequent publication venues featuring Toriumi's work include:

  • Applied Physics Letters
  • Applied Physics Express
  • Advanced Electronic Materials
  • APL Materials
  • Nature Communications

Notable recent papers authored or coauthored by Toriumi cover a range of subjects related to ferroelectric materials and devices. These include:

  • Roadmap on ferroelectric hafnia- and zirconia-based materials and devices, 2023, APL Materials
  • Polarization switching in thin doped HfO2 ferroelectric layers, 2020, Applied Physics Letters
  • Accelerated ferroelectric phase transformation in HfO2/ZrO2 nanolaminates, 2021, Applied Physics Express
  • Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack, 2020, Nature Communications
  • Modulation of VO2 Metal-Insulator Transition by Ferroelectric HfO2 Gate Insulator, 2020, Advanced Electronic Materials

Toriumi has also contributed to book publications, including a 2021 title named Material Engineering and Manufacturing IV, published by Trans Tech Publications Ltd. eBooks.

Collaborations are a significant aspect of Toriumi's research output. Frequent coauthors include Takeaki Yajima, Tomonori Nishimura, Shinji Migita, Takahisa Tanaka, and Michael Hoffmann.

The combination of diverse subfields and interrelated research topics demonstrates Toriumi's integration of materials science and engineering principles, particularly in the development and understanding of ferroelectric materials and semiconductor technologies.

Best Publications

  • Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

    T. Mizuno;J. Okumtura;A. Toriumi

  • Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

    Tomonori Nishimura;Koji Kita;Akira Toriumi

  • Origin of electric dipoles formed at high-k/SiO2 interface

    Koji Kita;Akira Toriumi

  • Contact resistivity and current flow path at metal/graphene contact

    K. Nagashio;T. Nishimura;K. Kita;A. Toriumi

  • Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics

    Choong Hyun Lee;Toshiyuki Tabata;Tomonori Nishimura;Kosuke Nagashio

  • Dielectric constant enhancement due to Si incorporation into HfO2

    Kazuyuki Tomida;Koji Kita;Akira Toriumi

  • Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal?Insulator?Semiconductor Characteristics

    Koji Kita;Sho Suzuki;Hideyuki Nomura;Toshitake Takahashi

  • A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

    Tomonori Nishimura;Koji Kita;Akira Toriumi

  • Chemical structure of the ultrathin SiO 2 / S i ( 100 ) interface: An angle-resolved Si 2 p photoemission study

    J. H. Oh;H. W. Yeom;Y. Hagimoto;K. Ono

  • A study of photon emission from n-channel MOSFET's

    A. Toriumi;M. Yoshimi;M. Iwase;Y. Akiyama

  • Permittivity increase of yttrium-doped HfO2 through structural phase transformation

    Koji Kita;Kentaro Kyuno;Akira Toriumi

  • Electrical transport properties of graphene on SiO2 with specific surface structures

    K. Nagashio;T. Yamashita;T. Nishimura;K. Kita

  • Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance

    K. Nagashio;T. Nishimura;K. Kita;A. Toriumi

  • Experimental evidence of inelastic tunneling in stress-induced leakage current

    S. Takagi;N. Yasuda;A. Toriumi

  • Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

    Xuan Tian;Shigehisa Shibayama;Tomonori Nishimura;Takeaki Yajima

  • Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

    Yi Zhao;Masahiro Toyama;Koji Kita;Kentaro Kyuno

  • Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

    Kunihiko Iwamoto;Yuuichi Kamimuta;Arito Ogawa;Yukimune Watanabe

  • Desorption kinetics of GeO from GeO2/Ge structure

    Sheng Kai Wang;Koji Kita;Choong Hyun Lee;Toshiyuki Tabata

  • Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

    Lun Xu;Tomonori Nishimura;Shigehisa Shibayama;Takeaki Yajima

  • Quantitative understanding of inversion-layer capacitance in Si MOSFET's

    S. Takagi;A. Toriumi

  • Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

    Y. Yamamoto;K. Kita;K. Kyuno;A. Toriumi

  • Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key (Invited Paper)

    Akira Toriumi;Toshiyuki Tabata;Choong Hyun Lee;Tomonori Nishimura

  • On the universality of inversion-layer mobility in n- and p-channel MOSFETs

    S. Takagi;M. Iwase;A. Toriumi

Frequent Co-Authors

Junji Koga
Junji Koga Toshiba (Japan)
Shinichi Takagi
Shinichi Takagi University of Tokyo
Georg Kresse
Georg Kresse University of Vienna
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Li Qiang Zhu
Li Qiang Zhu Ningbo University
Kazuhiko Endo
Kazuhiko Endo National Institute of Advanced Industrial Science and Technology
Shoji Tanaka
Shoji Tanaka Sophia University
Junlei Qi
Junlei Qi Harbin Institute of Technology
Masaharu Oshima
Masaharu Oshima University of Tokyo

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