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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 48 10708 10344 659 628 575 12986

Toyohiro Chikyow publications per year

The chart shows the history of publications by Toyohiro Chikyow between 1985 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Toyohiro Chikyow published across 41 years, from 1985 to 2025, averaging 14.6 papers a year. Output peaked at 63 publications in 2006. 5 of the 600 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 1985 to 2025. Vertical axis: number of publications, 0 to 63. Peak 63 publications in 2006. 1985: 1 publication 1986: 2 publications 1987: 1 publication 1988: 0 publications 1989: 0 publications 1990: 2 publications 1991: 1 publication 1992: 4 publications 1993: 3 publications 1994: 4 publications 1995: 2 publications 1996: 1 publication 1997: 2 publications 1998: 2 publications 1999: 1 publication 2000: 1 publication 2001: 21 publications 2002: 24 publications 2003: 18 publications 2004: 16 publications 2005: 21 publications 2006: 63 publications 2007: 41 publications 2008: 30 publications 2009: 19 publications 2010: 28 publications 2011: 29 publications 2012: 21 publications 2013: 25 publications 2014: 27 publications 2015: 25 publications 2016: 38 publications 2017: 35 publications 2018: 22 publications 2019: 21 publications 2020: 16 publications 2021: 19 publications 2022: 8 publications 2023: 1 publication 2024: 3 publications 2025: 2 publications
1985 2025

600 publications in total across all disciplines

View publications per year as a table
Toyohiro Chikyow: publications per year, 1985 to 2025
Year Publications
1985 1
1986 2
1987 1
1988 0
1989 0
1990 2
1991 1
1992 4
1993 3
1994 4
1995 2
1996 1
1997 2
1998 2
1999 1
2000 1
2001 21
2002 24
2003 18
2004 16
2005 21
2006 63
2007 41
2008 30
2009 19
2010 28
2011 29
2012 21
2013 25
2014 27
2015 25
2016 38
2017 35
2018 22
2019 21
2020 16
2021 19
2022 8
2023 1
2024 3
2025 2
Total 600
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Toyohiro Chikyow publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Toyohiro Chikyow sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 570–589 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 575 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111 575
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Toyohiro Chikyow D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Toyohiro Chikyow sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 48–49 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 48 D-Index — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598 48
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Toyohiro Chikyow is affiliated with the National Institute for Materials Science in Japan. Their research focuses primarily on Engineering and Materials Science, with a particular concentration in the subfields of Materials Chemistry, Biomedical Engineering, Electrical and Electronic Engineering, Mechanical Engineering, and Condensed Matter Physics.

The main topics Toyohiro Chikyow has investigated include:

  • ZnO doping and properties
  • GaN-based semiconductor devices and materials
  • Machine Learning in Materials Science
  • High Entropy Alloys Studies
  • Acoustic Wave Resonator Technologies
  • Advanced Materials Characterization Techniques
  • Ga2O3 and related materials

Toyohiro Chikyow has contributed regularly to several publication venues, with the most frequent being:

  • Japanese Journal of Applied Physics
  • Zenodo (CERN European Organization for Nuclear Research)
  • Science and Technology of Advanced Materials Methods
  • ACS Omega
  • Materials Today Physics

Their recent publications include:

  • "Realization of closed-loop optimization of epitaxial titanium nitride thin-film growth via machine learning," 2020, Materials Today Physics
  • "Evidence-based recommender system for high-entropy alloys," 2021, Nature Computational Science
  • "Layer-by-Layer Motif Heteroarchitecturing of N,S-Codoped Reduced Graphene Oxide-Wrapped Ni/NiS Nanoparticles for the Electrochemical Oxidation of Water," 2020, ChemSusChem
  • "Automatic exhaustive calculations of large material space by Korringa-Kohn-Rostoker coherent potential approximation method applied to equiatomic quaternary high entropy alloys," 2022, Physical Review Materials
  • "Valence Band Modification of a (GaxIn1-x)2O3 Solid Solution System Fabricated by Combinatorial Synthesis," 2020, ACS Combinatorial Science

Toyohiro Chikyow's frequent collaborators include:

  • Takahiro Nagata
  • Shinjiro Yagyu
  • Hiori Kino
  • Shigenori Ueda
  • Atsushi Ogura

Best Publications

  • Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

    Yuji Matsumoto;Makoto Murakami;Tomoji Shono;Tetsuya Hasegawa

  • New MBE growth method for InSb quantum well boxes

    Nobuyuki Koguchi;Satoshi Takahashi;Toyohiro Chikyow

  • Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor

    Hidemi Toyosaki;Tomoteru Fukumura;Yasuhiro Yamada;Kiyomi Nakajima

  • Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxy

    M. Murakami;Y. Matsumoto;K. Nakajima;T. Makino

  • S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

    Young Zo Yoo;Zheng Wu Jin;T. Chikyow;T. Fukumura

  • First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

    N. Umezawa;K. Shiraishi;K. Shiraishi;T. Ohno;H. Watanabe;H. Watanabe

  • Evolution of standing mesochannels on porous anodic alumina substrates with designed conical holes.

    Yusuke Yamauchi;Tomota Nagaura;Tomota Nagaura;Ayako Ishikawa;Toyohiro Chikyow

  • Reaction and regrowth control of CeO2 on Si(111) surface for the silicon‐on‐insulator structure

    T. Chikyow;S. M. Bedair;L. Tye;N. A. El‐Masry

  • ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111)

    L. Tye;N. A. El‐Masry;T. Chikyow;P. McLarty

  • Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-$K$ MISFET with p+poly-Si Gates -A Theoretical Approach

    Kenji Shiraishi;Keisaku Yamada;Kazuyoshi Torii;Yasushi Akasaka

  • ZnO–CoO solid solution thin films

    Y.-Z. Yoo;T. Fukumura;Zhengwu Jin;K. Hasegawa

  • Multi-Valued Logic Circuits Based on Organic Anti-ambipolar Transistors.

    Kazuyoshi Kobashi;Ryoma Hayakawa;Toyohiro Chikyow;Yutaka Wakayama;Yutaka Wakayama

  • Blue and ultraviolet cathodoluminescence from Mn-doped epitaxial ZnO thin films

    Zheng Wu Jin;Y. Z. Yoo;T. Sekiguchi;T. Chikyow

  • Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning

    Yasushi Akasaka;Genji Nakamura;Kenji Shiraishi;Kenji Shiraishi;Naoto Umezawa

  • Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion

    Masamitsu Haemori;Takahiro Nagata;Toyohiro Chikyow

  • Room-Temperature Epitaxial Growth of CeO2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface

    Mamoru Yoshimoto;Kazuki Shimozono;Tatsuro Maeda;Tsuyoshi Ohnishi

  • Novel germanium-based magnetic semiconductors.

    Unknown

  • Impact of additional factors in threshold voltage variability of metal/high-k gate stacks and its reduction by controlling crystalline structure and grain size in the metal gates

    K. Ohmori;T. Matsuki;D. Ishikawa;T. Morooka

  • Formation of a K—In—Se Surface Species by NaF/KF Postdeposition Treatment of Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers

    Evelyn Handick;Patrick Reinhard;Regan G. Wilks;Fabian Pianezzi

  • Insulator-metal transition induced by interlayer coupling in La 0.6 Sr 0.4 MnO 3 / SrTiO 3 superlattices

    M. Izumi;Y. Ogimoto;Y. Okimoto;T. Manako

  • Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors

    Seiji Kuwabara;Tsuyoshi Kondo;Toyohiro Chikyow;Parhat Ahmet

Frequent Co-Authors

Hideomi Koinuma
Hideomi Koinuma Tokyo Institute of Technology
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Naoto Umezawa
Naoto Umezawa Samsung (South Korea)
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Seiichi Miyazaki
Seiichi Miyazaki Hiroshima University
Akira Uedono
Akira Uedono University of Tsukuba
Yuji Matsumoto
Yuji Matsumoto Nara Institute of Science and Technology
Tetsuya Hasegawa
Tetsuya Hasegawa University of Tokyo
Tomoteru Fukumura
Tomoteru Fukumura Tohoku University
Takashi Sekiguchi
Takashi Sekiguchi University of Tsukuba

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