His primary scientific interests are in Condensed matter physics, Silicon, High-κ dielectric, Chemical physics and Band gap. His studies in Condensed matter physics integrate themes in fields like Quantum dot, Ground state, Semiconductor and Electron transfer. The various areas that he examines in his Silicon study include Self-diffusion, Transistor, Strained silicon and Analytical chemistry.
His High-κ dielectric study combines topics in areas such as Threshold voltage, Ionic bonding and Oxygen vacancy. Kenji Shiraishi has researched Chemical physics in several fields, including Molecular beam epitaxy, Epitaxy, Oxide and Substrate. His Band gap research incorporates themes from Crystallography, Electronic structure, Electronic band structure and Band bending.
Kenji Shiraishi mainly investigates Condensed matter physics, Optoelectronics, Chemical physics, Silicon and High-κ dielectric. His research integrates issues of Quantum dot, Electron, Fermi level and Semiconductor in his study of Condensed matter physics. His study in Electron is interdisciplinary in nature, drawing from both Wave packet, Atomic physics and Molecular physics.
His work carried out in the field of Optoelectronics brings together such families of science as Metal gate, Nanotechnology and MOSFET. His work in Silicon addresses issues such as Oxide, which are connected to fields such as Oxygen. Kenji Shiraishi works mostly in the field of High-κ dielectric, limiting it down to concerns involving Analytical chemistry and, occasionally, Annealing.
His scientific interests lie mostly in Optoelectronics, Condensed matter physics, Chemical engineering, Gallium nitride and Metalorganic vapour phase epitaxy. His Optoelectronics research is multidisciplinary, incorporating perspectives in Gallium oxide and Strain. Kenji Shiraishi interconnects Stanene, Impurity and Density functional theory in the investigation of issues within Condensed matter physics.
The Density functional theory study combines topics in areas such as Chemical physics, Oxide and Fermi level. In his work, Ab initio is strongly intertwined with Physical chemistry, which is a subfield of Metalorganic vapour phase epitaxy. His Dislocation study integrates concerns from other disciplines, such as Electronic structure, Atom probe and Semiconductor.
The scientist’s investigation covers issues in Epitaxy, Condensed matter physics, Metalorganic vapour phase epitaxy, Density functional theory and Analytical chemistry. The study incorporates disciplines such as Stanene, Germanene, Silicene and Impurity in addition to Condensed matter physics. His research in Stanene tackles topics such as Antibonding molecular orbital which are related to areas like Chemical physics.
His study looks at the intersection of Metalorganic vapour phase epitaxy and topics like Substrate with Total pressure, Limiting oxygen concentration and Crystallography. His Density functional theory research includes themes of Carbon, Oxide and Fermi level. His Dislocation study combines topics from a wide range of disciplines, such as Molecular physics and Semiconductor.
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Theoretical possibility of stage corrugation in Si and Ge analogs of graphite
Kyozaburo Takeda;Kenji Shiraishi.
Physical Review B (1994)
A ribonucleotide reductase gene involved in a p53-dependent cell-cycle checkpoint for DNA damage
Hiroshi Tanaka;Hirofumi Arakawa;Tatsuya Yamaguchi;Kenji Shiraishi.
Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shell.
Yoshihiko Kanemitsu;Tetsuo Ogawa;Kenji Shiraishi;Kyozaburo Takeda.
Physical Review B (1993)
A New Slab Model Approach for Electronic Structure Calculation of Polar Semiconductor Surface
Journal of the Physical Society of Japan (1990)
First-Principles Study of Oxide Growth on Si(100) Surfaces and at SiO 2 /Si(100) Interfaces
Hiroyuki Kageshima;Kenji Shiraishi.
Physical Review Letters (1998)
Intrinsic origin of visible light emission from silicon quantum wires: Electronic structure and geometrically restricted exciton.
Takahisa Ohno;Kenji Shiraishi;Tetsuo Ogawa.
Physical Review Letters (1992)
First-principles study of sulfur passivation of GaAs(001) surfaces.
Takahisa Ohno;Kenji Shiraishi.
Physical Review B (1990)
Momentum-matrix-element calculation using pseudopotentials
Hiroyuki Kageshima;Kenji Shiraishi.
Physical Review B (1997)
Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
Hiroyuki Kageshima;Kenji Shiraishi;Masashi Uematsu.
Japanese Journal of Applied Physics (1999)
Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-$K$ MISFET with p+poly-Si Gates -A Theoretical Approach
Kenji Shiraishi;Keisaku Yamada;Kazuyoshi Torii;Yasushi Akasaka.
Japanese Journal of Applied Physics (2004)
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