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Kenji Shiraishi

Kenji Shiraishi

D-Index & Metrics

Materials Science

D-Index
50
Citations
12182
World Ranking
10101
National Ranking
612

Overview

Kenji Shiraishi is affiliated with Nagoya University in Japan and specializes in research across engineering, materials science, and physics and astronomy. Their work primarily focuses on electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, condensed matter physics, and atomic and molecular physics and optics.

The main research topics explored by Shiraishi include semiconductor materials and devices, GaN-based semiconductor devices and materials, Ga2O3 and related materials, silicon carbide semiconductor technologies, ZnO doping and properties, advanced ceramic materials synthesis, and innovative energy harvesting technologies.

Shiraishi has contributed to several recent papers, which include:

  • "Pan-cancer methylome analysis for cancer diagnosis and classification of cancer cell of origin," 2021, Cancer Gene Therapy
  • "Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE," 2021, Crystal Growth & Design
  • "Hydrogen desorption from silicane and germanane crystals: Toward creation of free-standing monolayer silicene and germanene," 2020, Journal of Applied Physics
  • "Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide(Al2O3)1−x(SiO2)x: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices," 2020, Physical Review Applied
  • "Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property," 2024, Journal of Applied Physics

Frequent co-authors with whom Shiraishi has collaborated include Atsushi Oshiyama, Masaaki Araidai, Kenta Chokawa, Toru Akiyama, and Hiroyuki Kageshima.

Publications by Shiraishi appear most often in journals such as the Japanese Journal of Applied Physics, Applied Physics Letters, Journal of Applied Physics, Applied Surface Science, and Physical Review B.

Best Publications

  • Theoretical possibility of stage corrugation in Si and Ge analogs of graphite

    Kyozaburo Takeda;Kenji Shiraishi

  • A ribonucleotide reductase gene involved in a p53-dependent cell-cycle checkpoint for DNA damage

    Hiroshi Tanaka;Hirofumi Arakawa;Tatsuya Yamaguchi;Kenji Shiraishi

  • Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shell.

    Yoshihiko Kanemitsu;Tetsuo Ogawa;Kenji Shiraishi;Kyozaburo Takeda

  • A New Slab Model Approach for Electronic Structure Calculation of Polar Semiconductor Surface

    Kenji Shiraishi

  • First-Principles Study of Oxide Growth on Si(100) Surfaces and at SiO 2 /Si(100) Interfaces

    Hiroyuki Kageshima;Kenji Shiraishi

  • Intrinsic origin of visible light emission from silicon quantum wires: Electronic structure and geometrically restricted exciton.

    Takahisa Ohno;Kenji Shiraishi;Tetsuo Ogawa

  • Momentum-matrix-element calculation using pseudopotentials

    Hiroyuki Kageshima;Kenji Shiraishi

  • First-principles study of sulfur passivation of GaAs(001) surfaces.

    Takahisa Ohno;Kenji Shiraishi

  • Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission

    Hiroyuki Kageshima;Kenji Shiraishi;Masashi Uematsu

  • First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

    N. Umezawa;K. Shiraishi;K. Shiraishi;T. Ohno;H. Watanabe;H. Watanabe

  • Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-$K$ MISFET with p+poly-Si Gates -A Theoretical Approach

    Kenji Shiraishi;Keisaku Yamada;Kazuyoshi Torii;Yasushi Akasaka

  • A massively-parallel electronic-structure calculations based on real-space density functional theory

    Jun-Ichi Iwata;Daisuke Takahashi;Atsushi Oshiyama;Atsushi Oshiyama;Taisuke Boku

  • Electronic structure of Si-skeleton materials

    Kyozaburo Takeda;Kenji Shiraishi

  • A new theoretical approach to adsorption desorption behavior of Ga on GaAs surfaces

    Y. Kangawa;Y. Kangawa;T. Ito;A. Taguchi;K. Shiraishi

  • Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning

    Yasushi Akasaka;Genji Nakamura;Kenji Shiraishi;Kenji Shiraishi;Naoto Umezawa

  • Impact of additional factors in threshold voltage variability of metal/high-k gate stacks and its reduction by controlling crystalline structure and grain size in the metal gates

    K. Ohmori;T. Matsuki;D. Ishikawa;T. Morooka

  • ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

    Katsumasa Kamiya;Moon Young Yang;Seong Geon Park;Blanka Magyari-Köpe

  • Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation

    Seiji Horiguchi;Masao Nagase;Kenji Shiraishi;Hiroyuki Kageshima

  • Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach

    Yoshihiro Kangawa;Toru Akiyama;Tomonori Ito;Kenji Shiraishi

  • GeTe sequences in superlattice phase change memories and their electrical characteristics

    T. Ohyanagi;M. Kitamura;M. Araidai;S. Kato

  • Electronic structure of silicon-oxygen high polymers

    Kyozaburo Takeda;Kenji Shiraishi

Frequent Co-Authors

Atsushi Oshiyama
Atsushi Oshiyama Nagoya University
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science
Seiichi Miyazaki
Seiichi Miyazaki Hiroshima University
Tetsuo Endoh
Tetsuo Endoh Tohoku University
Naoto Umezawa
Naoto Umezawa Samsung (South Korea)
Akira Uedono
Akira Uedono University of Tsukuba
Hiroshi Amano
Hiroshi Amano Nagoya University
Yoshio Nishi
Yoshio Nishi Stanford University
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Mauro Boero
Mauro Boero University of Strasbourg

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