2026 Atsushi Oshiyama: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	57	7857	7596	442	426	350	16358

Research.com Recognitions

2011 - ACM Gordon Bell Prize For "First principles calculation of electronic states of a silicon nanowire with 100,000 atoms on the K computer."

Overview

Atsushi Oshiyama is affiliated with Nagoya University in Japan and has contributed extensively to the fields of materials science, engineering, and physics and astronomy. Their research focuses primarily on semiconductor materials and devices, with particular attention to GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, and silicon carbide semiconductor technologies. Machine learning applications in materials science and semiconductor quantum structures and devices also feature among their research topics.

The scientist's recent papers encompass a range of topics within materials science and applied physics. Selected publications include:

Order-N orbital-free density-functional calculations with machine learning of functional derivatives for semiconductors and metals, 2021, Physical Review Research
Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization, 2022, Applied Physics Letters
Microscopic mechanism of adatom diffusion on stepped SiC surfaces revealed by first-principles calculations, 2021, Applied Surface Science
Density functional calculations for structures and energetics of atomic steps and their implication for surface morphology on Si-face SiC polar surfaces, 2020, Physical Review B
Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al₂O₃)₁₋ₓ(SiO₂)ₓ: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices, 2020, Physical Review Applied

The frequent co-authors in Atsushi Oshiyama's research include:

Kenji Shiraishi (19 publications)
Kenta Chokawa (6 publications)
Yoshihiro Kangawa (5 publications)
Shuto Hattori (3 publications)
K. Seino (3 publications)

They have commonly published research in venues such as:

Applied Physics Letters (4 publications)
Applied Surface Science (4 publications)
Journal of Applied Physics (3 publications)
Physical Review B (3 publications)
Applied Physics Express (3 publications)

Atsushi Oshiyama has been involved in multiple subfields of study including:

Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

The scientist was awarded the ACM Gordon Bell Prize in 2011 for "First principles calculation of electronic states of a silicon nanowire with 100,000 atoms on the K computer."

Best Publications

New one-dimensional conductors: Graphitic microtubules.

Noriaki Hamada;Shin-ichi Sawada;Atsushi Oshiyama

4985
Citations
Cohesive mechanism and energy bands of solid C60.

Susumu Saito;Atsushi Oshiyama

1169
Citations
Energetics and electronic structures of encapsulated C60 in a carbon nanotube.

Susumu Okada;Susumu Saito;Atsushi Oshiyama

501
Citations
Magnetic ordering in hexagonally bonded sheets with first-row elements.

Susumu Okada;Atsushi Oshiyama

433
Citations
Microscopic theory of atomic diffusion mechanisms in silicon

Roberto Car;Paul J. Kelly;Atsushi Oshiyama;Sokrates T. Pantelides

431
Citations
Atomic corrugation and electron localization due to Moiré patterns in twisted bilayer graphenes

Kazuyuki Uchida;Shinnosuke Furuya;Jun-Ichi Iwata;Atsushi Oshiyama

328
Citations
Vacancy in Si: Successful description within the local-density approximation.

Osamu Sugino;Atsushi Oshiyama

264
Citations
Absence and presence of Dirac electrons in silicene on substrates

Zhi-Xin Guo;Shinnosuke Furuya;Jun-ichi Iwata;Atsushi Oshiyama

234
Citations
Microscopic theory of impurity-defect reactions and impurity diffusion in silicon.

Roberto Car;Paul J. Kelly;Atsushi Oshiyama;Sokrates T. Pantelides

190
Citations
A massively-parallel electronic-structure calculations based on real-space density functional theory

Jun-Ichi Iwata;Daisuke Takahashi;Atsushi Oshiyama;Atsushi Oshiyama;Taisuke Boku

179
Citations
ELECTRONIC STRUCTURE OF SI46 AND NA2BA6SI46

Susumu Saito;Atsushi Oshiyama

164
Citations
New Metallic Crystalline Carbon: Three Dimensionally Polymerized C60 Fullerite

Susumu Okada;Susumu Saito;Atsushi Oshiyama

159
Citations
Energetics and electronic structures of one-dimensional fullerene chains encapsulated in zigzag nanotubes

Minoru Otani;Susumu Okada;Atsushi Oshiyama

147
Citations
Electronic and geometric structures of C70.

Susumu Saito;Atsushi Oshiyama

138
Citations
Structures of steps and appearances of {311} facets on Si(100) surfaces.

Atsushi Oshiyama

135
Citations
Electron-state control of carbon nanotubes by space and encapsulated fullerenes

Susumu Okada;Minoru Otani;Atsushi Oshiyama

130
Citations
Linear dependence of superconducting transition temperature on Fermi-level density-of-states in alkali-doped C60

Atsushi Oshiyama;Susumu Saito

127
Citations
Atomic and electronic structures of oxygen on Si(100) surfaces : metastable adsorption sites

Yoshiyuki Miyamoto;Atsushi Oshiyama

126
Citations
Mechanisms of high temperature superconductivity

Hiroshi Kamimura;Atsushi Oshiyama

120
Citations
Intrinsic ferromagnetism due to cation vacancies in Gd-doped GaN : First-principles calculations

Y. Gohda;Atsushi Oshiyama

115
Citations
Ionic metal KxC60: Cohesion and energy bands.

Susumu Saito;Atsushi Oshiyama

113
Citations