World's Best Scientists 2026 revealed!
Atsushi Oshiyama

Atsushi Oshiyama

D-Index & Metrics

Materials Science

D-Index
57
Citations
16358
World Ranking
7855
National Ranking
442

Atsushi Oshiyama publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Atsushi Oshiyama sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 350 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Atsushi Oshiyama D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Atsushi Oshiyama sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 57 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2011 - ACM Gordon Bell Prize For "First principles calculation of electronic states of a silicon nanowire with 100,000 atoms on the K computer."

Overview

Atsushi Oshiyama is affiliated with Nagoya University in Japan and has contributed extensively to the fields of materials science, engineering, and physics and astronomy. Their research focuses primarily on semiconductor materials and devices, with particular attention to GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, and silicon carbide semiconductor technologies. Machine learning applications in materials science and semiconductor quantum structures and devices also feature among their research topics.

The scientist's recent papers encompass a range of topics within materials science and applied physics. Selected publications include:

  • Order-N orbital-free density-functional calculations with machine learning of functional derivatives for semiconductors and metals, 2021, Physical Review Research
  • Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization, 2022, Applied Physics Letters
  • Microscopic mechanism of adatom diffusion on stepped SiC surfaces revealed by first-principles calculations, 2021, Applied Surface Science
  • Density functional calculations for structures and energetics of atomic steps and their implication for surface morphology on Si-face SiC polar surfaces, 2020, Physical Review B
  • Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al₂O₃)₁₋ₓ(SiO₂)ₓ: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices, 2020, Physical Review Applied

The frequent co-authors in Atsushi Oshiyama's research include:

  • Kenji Shiraishi (19 publications)
  • Kenta Chokawa (6 publications)
  • Yoshihiro Kangawa (5 publications)
  • Shuto Hattori (3 publications)
  • K. Seino (3 publications)

They have commonly published research in venues such as:

  • Applied Physics Letters (4 publications)
  • Applied Surface Science (4 publications)
  • Journal of Applied Physics (3 publications)
  • Physical Review B (3 publications)
  • Applied Physics Express (3 publications)

Atsushi Oshiyama has been involved in multiple subfields of study including:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

The scientist was awarded the ACM Gordon Bell Prize in 2011 for "First principles calculation of electronic states of a silicon nanowire with 100,000 atoms on the K computer."

Best Publications

  • New one-dimensional conductors: Graphitic microtubules.

    Noriaki Hamada;Shin-ichi Sawada;Atsushi Oshiyama

  • Cohesive mechanism and energy bands of solid C60.

    Susumu Saito;Atsushi Oshiyama

  • Energetics and electronic structures of encapsulated C60 in a carbon nanotube.

    Susumu Okada;Susumu Saito;Atsushi Oshiyama

  • Magnetic ordering in hexagonally bonded sheets with first-row elements.

    Susumu Okada;Atsushi Oshiyama

  • Microscopic theory of atomic diffusion mechanisms in silicon

    Roberto Car;Paul J. Kelly;Atsushi Oshiyama;Sokrates T. Pantelides

  • Atomic corrugation and electron localization due to Moiré patterns in twisted bilayer graphenes

    Kazuyuki Uchida;Shinnosuke Furuya;Jun-Ichi Iwata;Atsushi Oshiyama

  • Vacancy in Si: Successful description within the local-density approximation.

    Osamu Sugino;Atsushi Oshiyama

  • Absence and presence of Dirac electrons in silicene on substrates

    Zhi-Xin Guo;Shinnosuke Furuya;Jun-ichi Iwata;Atsushi Oshiyama

  • Microscopic theory of impurity-defect reactions and impurity diffusion in silicon.

    Roberto Car;Paul J. Kelly;Atsushi Oshiyama;Sokrates T. Pantelides

  • A massively-parallel electronic-structure calculations based on real-space density functional theory

    Jun-Ichi Iwata;Daisuke Takahashi;Atsushi Oshiyama;Atsushi Oshiyama;Taisuke Boku

  • ELECTRONIC STRUCTURE OF SI46 AND NA2BA6SI46

    Susumu Saito;Atsushi Oshiyama

  • New Metallic Crystalline Carbon: Three Dimensionally Polymerized C60 Fullerite

    Susumu Okada;Susumu Saito;Atsushi Oshiyama

  • Energetics and electronic structures of one-dimensional fullerene chains encapsulated in zigzag nanotubes

    Minoru Otani;Susumu Okada;Atsushi Oshiyama

  • Electronic and geometric structures of C70.

    Susumu Saito;Atsushi Oshiyama

  • Structures of steps and appearances of {311} facets on Si(100) surfaces.

    Atsushi Oshiyama

  • Electron-state control of carbon nanotubes by space and encapsulated fullerenes

    Susumu Okada;Minoru Otani;Atsushi Oshiyama

  • Linear dependence of superconducting transition temperature on Fermi-level density-of-states in alkali-doped C60

    Atsushi Oshiyama;Susumu Saito

  • Atomic and electronic structures of oxygen on Si(100) surfaces : metastable adsorption sites

    Yoshiyuki Miyamoto;Atsushi Oshiyama

  • Mechanisms of high temperature superconductivity

    Hiroshi Kamimura;Atsushi Oshiyama

  • Intrinsic ferromagnetism due to cation vacancies in Gd-doped GaN : First-principles calculations

    Y. Gohda;Atsushi Oshiyama

  • Ionic metal KxC60: Cohesion and energy bands.

    Susumu Saito;Atsushi Oshiyama

Frequent Co-Authors

Kenji Shiraishi
Kenji Shiraishi Nagoya University
Susumu Okada
Susumu Okada University of Tsukuba
Mauro Boero
Mauro Boero University of Strasbourg
Hiroshi Amano
Hiroshi Amano Nagoya University
Roberto Car
Roberto Car Princeton University
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University
Naoto Umezawa
Naoto Umezawa Samsung (South Korea)
Hongjun Xiang
Hongjun Xiang Fudan University
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science

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