2015 - IEEE Fellow For contributions to point-defect dynamics in semiconductor devices
2012 - Fellow of the Materials Research Society
2003 - Fellow of the American Association for the Advancement of Science (AAAS)
1980 - Fellow of American Physical Society (APS) Citation Not Provided
His primary areas of investigation include Condensed matter physics, Chemical physics, Nanotechnology, Scanning transmission electron microscopy and Atomic physics. His Condensed matter physics research is multidisciplinary, incorporating elements of Ferroelectricity, Impurity, Semiconductor and Grain boundary. The Impurity study which covers Doping that intersects with Band gap.
His studies in Chemical physics integrate themes in fields like Hydrogen, Dangling bond, Activation energy, Passivation and Vacancy defect. The study incorporates disciplines such as Electronic structure, Bilayer and Catalysis in addition to Nanotechnology. His Scanning transmission electron microscopy research is multidisciplinary, incorporating perspectives in Crystallography, Atom, Molecular physics, Electron energy loss spectroscopy and Density functional theory.
Sokrates T. Pantelides focuses on Condensed matter physics, Chemical physics, Optoelectronics, Nanotechnology and Silicon. In his study, Scanning transmission electron microscopy is strongly linked to Density functional theory, which falls under the umbrella field of Condensed matter physics. His research in Scanning transmission electron microscopy intersects with topics in Crystallography, Monolayer, Molecular physics and Electron energy loss spectroscopy, Electron.
Passivation and Annealing is closely connected to Hydrogen in his research, which is encompassed under the umbrella topic of Chemical physics. His Optoelectronics research includes themes of Transistor, Oxide and Irradiation. His Silicon study frequently draws parallels with other fields, such as Atomic physics.
Condensed matter physics, Optoelectronics, Monolayer, Graphene and Density functional theory are his primary areas of study. Sokrates T. Pantelides has included themes like van der Waals force, Phase and Ferroelectricity in his Condensed matter physics study. His biological study spans a wide range of topics, including Chemical physics, Thin film, Adsorption, Molecular physics and Substrate.
His Graphene study is concerned with the field of Nanotechnology as a whole. His studies deal with areas such as Scanning transmission electron microscopy, Phase transition, Doping and Metal as well as Density functional theory. The Scanning transmission electron microscopy study combines topics in areas such as Crystallography, Spectroscopy, Bilayer and Impurity.
His primary areas of study are Condensed matter physics, Density functional theory, Optoelectronics, Scanning transmission electron microscopy and Monolayer. He interconnects Ferroelectricity, Piezoelectric coefficient, Phase and Thermoelectric effect in the investigation of issues within Condensed matter physics. His Density functional theory research is multidisciplinary, relying on both Crystallography, Heterojunction, Electron energy loss spectroscopy, Dielectric and Band gap.
The concepts of his Optoelectronics study are interwoven with issues in Transistor, Thermal conductivity and Graphene. Sokrates T. Pantelides has researched Scanning transmission electron microscopy in several fields, including Chemical physics, Doping, Dopant, Atom and Electron. His study with Monolayer involves better knowledge in Nanotechnology.
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Bandgap engineering of strained monolayer and bilayer MoS2.
Hiram J. Conley;Bin Wang;Bin Wang;Jed I. Ziegler;Jed I. Ziegler;Richard F. Haglund;Richard F. Haglund.
Nano Letters (2013)
Vertical and in-plane heterostructures from WS2/MoS2 monolayers.
Yongji Gong;Junhao Lin;Xingli Wang;Gang Shi.
Nature Materials (2014)
Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy
Ondrej L. Krivanek;Matthew F. Chisholm;Valeria Nicolosi;Timothy J. Pennycook;Timothy J. Pennycook.
Nature (2010)
First-Principles Calculation of Transport Properties of a Molecular Device
M. Di Ventra;S. T. Pantelides;S. T. Pantelides;N. D. Lang.
Physical Review Letters (2000)
Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction.
Gonglan Ye;Yongji Gong;Junhao Lin;Bo Li.
Nano Letters (2016)
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald.
IEEE Electron Device Letters (2001)
The electronic structure of impurities and other point defects in semiconductors
Sokrates T. Pantelides.
Reviews of Modern Physics (1978)
Theory of hydrogen diffusion and reactions in crystalline silicon
Chris G. Van de Walle;P. J. H. Denteneer;Y. Bar-Yam;S. T. Pantelides.
Physical Review B (1989)
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald.
Applied Physics Letters (2000)
Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt
Yeliang Wang;Linfei Li;Wei Yao;Shiru Song.
Nano Letters (2015)
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