Sokrates T. Pantelides

Research.com Recognitions

• 2022 - Research.com Materials Science in United States Leader Award
• 2015 - IEEE Fellow For contributions to point-defect dynamics in semiconductor devices
• 2012 - Fellow of the Materials Research Society
• 2003 - Fellow of the American Association for the Advancement of Science (AAAS)
• 1980 - Fellow of American Physical Society (APS) Citation Not Provided

Overview

Best Publications

• Vertical and in-plane heterostructures from WS2/MoS2 monolayers.

  Yongji Gong;Junhao Lin;Xingli Wang;Gang Shi

  2431
  Citations

• Bandgap engineering of strained monolayer and bilayer MoS2.

  Hiram J. Conley;Bin Wang;Bin Wang;Jed I. Ziegler;Jed I. Ziegler;Richard F. Haglund;Richard F. Haglund

  1860
  Citations

• Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy

  Ondrej L. Krivanek;Matthew F. Chisholm;Valeria Nicolosi;Timothy J. Pennycook;Timothy J. Pennycook

  1545
  Citations

• Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction.

  Gonglan Ye;Yongji Gong;Junhao Lin;Bo Li

  1230
  Citations

• First-Principles Calculation of Transport Properties of a Molecular Device

  M. Di Ventra;S. T. Pantelides;S. T. Pantelides;N. D. Lang

  1180
  Citations

• Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes.

  Fucai Liu;Lu You;Kyle L. Seyler;Xiaobao Li

  1131
  Citations

• Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

  G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald

  870
  Citations

• The electronic structure of impurities and other point defects in semiconductors

  Sokrates T. Pantelides

  823
  Citations

• Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt

  Yeliang Wang;Linfei Li;Wei Yao;Shiru Song

  712
  Citations

• Theory of hydrogen diffusion and reactions in crystalline silicon

  Chris G. Van de Walle;P. J. H. Denteneer;Y. Bar-Yam;S. T. Pantelides

  675
  Citations

• Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

  G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald

  606
  Citations

• Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide.

  Yongji Gong;Zheng Liu;Zheng Liu;Andrew R. Lupini;Gang Shi

  591
  Citations

• Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy

  A. R. Klots;A. K. M. Newaz;A. K. M. Newaz;Bin Wang;Bin Wang;D. Prasai

  484
  Citations

• Control of Doping by Impurity Chemical Potentials: Predictions for p-Type ZnO

  Yanfa Yan;S. B. Zhang;S. T. Pantelides;S. T. Pantelides

  472
  Citations

• Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates

  Xin Lu;M. Iqbal Bakti Utama;Junhao Lin;Junhao Lin;Xue Gong

  458
  Citations

• Microscopic theory of atomic diffusion mechanisms in silicon

  Roberto Car;Paul J. Kelly;Atsushi Oshiyama;Sokrates T. Pantelides

  431
  Citations

• Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy

  A. R. Klots;A. K. M. Newaz;Bin Wang;D. Prasai

  412
  Citations

• Defects in Amorphous Silicon: A New Perspective

  Sokrates T. Pantelides

  400
  Citations

• First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe.

  Chris G. Van de Walle;D. B. Laks;G. F. Neumark;S. T. Pantelides

  399
  Citations

• Fast kinetics of magnesium monochloride cations in interlayer-expanded titanium disulfide for magnesium rechargeable batteries

  Hyun Deog Yoo;Yanliang Liang;Hui Dong;Junhao Lin;Junhao Lin

  395
  Citations

• Electronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphous SiO 2 and GeO 2

  Sokrates T. Pantelides;Walter A. Harrison

  390
  Citations