D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 110 Citations 46,494 969 World Ranking 370 National Ranking 156
Physics D-index 110 Citations 42,823 680 World Ranking 780 National Ranking 428

Research.com Recognitions

Awards & Achievements

2015 - IEEE Fellow For contributions to point-defect dynamics in semiconductor devices

2012 - Fellow of the Materials Research Society

2003 - Fellow of the American Association for the Advancement of Science (AAAS)

1980 - Fellow of American Physical Society (APS) Citation Not Provided

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of investigation include Condensed matter physics, Chemical physics, Nanotechnology, Scanning transmission electron microscopy and Atomic physics. His Condensed matter physics research is multidisciplinary, incorporating elements of Ferroelectricity, Impurity, Semiconductor and Grain boundary. The Impurity study which covers Doping that intersects with Band gap.

His studies in Chemical physics integrate themes in fields like Hydrogen, Dangling bond, Activation energy, Passivation and Vacancy defect. The study incorporates disciplines such as Electronic structure, Bilayer and Catalysis in addition to Nanotechnology. His Scanning transmission electron microscopy research is multidisciplinary, incorporating perspectives in Crystallography, Atom, Molecular physics, Electron energy loss spectroscopy and Density functional theory.

His most cited work include:

  • Vertical and in-plane heterostructures from WS2/MoS2 monolayers. (1277 citations)
  • Bandgap engineering of strained monolayer and bilayer MoS2. (1251 citations)
  • Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy (825 citations)

What are the main themes of his work throughout his whole career to date?

Sokrates T. Pantelides focuses on Condensed matter physics, Chemical physics, Optoelectronics, Nanotechnology and Silicon. In his study, Scanning transmission electron microscopy is strongly linked to Density functional theory, which falls under the umbrella field of Condensed matter physics. His research in Scanning transmission electron microscopy intersects with topics in Crystallography, Monolayer, Molecular physics and Electron energy loss spectroscopy, Electron.

Passivation and Annealing is closely connected to Hydrogen in his research, which is encompassed under the umbrella topic of Chemical physics. His Optoelectronics research includes themes of Transistor, Oxide and Irradiation. His Silicon study frequently draws parallels with other fields, such as Atomic physics.

He most often published in these fields:

  • Condensed matter physics (34.92%)
  • Chemical physics (24.30%)
  • Optoelectronics (19.62%)

What were the highlights of his more recent work (between 2016-2021)?

  • Condensed matter physics (34.92%)
  • Optoelectronics (19.62%)
  • Monolayer (9.00%)

In recent papers he was focusing on the following fields of study:

Condensed matter physics, Optoelectronics, Monolayer, Graphene and Density functional theory are his primary areas of study. Sokrates T. Pantelides has included themes like van der Waals force, Phase and Ferroelectricity in his Condensed matter physics study. His biological study spans a wide range of topics, including Chemical physics, Thin film, Adsorption, Molecular physics and Substrate.

His Graphene study is concerned with the field of Nanotechnology as a whole. His studies deal with areas such as Scanning transmission electron microscopy, Phase transition, Doping and Metal as well as Density functional theory. The Scanning transmission electron microscopy study combines topics in areas such as Crystallography, Spectroscopy, Bilayer and Impurity.

Between 2016 and 2021, his most popular works were:

  • Fast kinetics of magnesium monochloride cations in interlayer-expanded titanium disulfide for magnesium rechargeable batteries (128 citations)
  • Fast kinetics of magnesium monochloride cations in interlayer-expanded titanium disulfide for magnesium rechargeable batteries (128 citations)
  • Large-Area and High-Quality 2D Transition Metal Telluride. (108 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of study are Condensed matter physics, Density functional theory, Optoelectronics, Scanning transmission electron microscopy and Monolayer. He interconnects Ferroelectricity, Piezoelectric coefficient, Phase and Thermoelectric effect in the investigation of issues within Condensed matter physics. His Density functional theory research is multidisciplinary, relying on both Crystallography, Heterojunction, Electron energy loss spectroscopy, Dielectric and Band gap.

The concepts of his Optoelectronics study are interwoven with issues in Transistor, Thermal conductivity and Graphene. Sokrates T. Pantelides has researched Scanning transmission electron microscopy in several fields, including Chemical physics, Doping, Dopant, Atom and Electron. His study with Monolayer involves better knowledge in Nanotechnology.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Bandgap engineering of strained monolayer and bilayer MoS2.

Hiram J. Conley;Bin Wang;Bin Wang;Jed I. Ziegler;Jed I. Ziegler;Richard F. Haglund;Richard F. Haglund.
Nano Letters (2013)

1978 Citations

Vertical and in-plane heterostructures from WS2/MoS2 monolayers.

Yongji Gong;Junhao Lin;Xingli Wang;Gang Shi.
Nature Materials (2014)

1939 Citations

Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy

Ondrej L. Krivanek;Matthew F. Chisholm;Valeria Nicolosi;Timothy J. Pennycook;Timothy J. Pennycook.
Nature (2010)

1274 Citations

First-Principles Calculation of Transport Properties of a Molecular Device

M. Di Ventra;S. T. Pantelides;S. T. Pantelides;N. D. Lang.
Physical Review Letters (2000)

1158 Citations

Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction.

Gonglan Ye;Yongji Gong;Junhao Lin;Bo Li.
Nano Letters (2016)

949 Citations

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald.
IEEE Electron Device Letters (2001)

768 Citations

The electronic structure of impurities and other point defects in semiconductors

Sokrates T. Pantelides.
Reviews of Modern Physics (1978)

764 Citations

Theory of hydrogen diffusion and reactions in crystalline silicon

Chris G. Van de Walle;P. J. H. Denteneer;Y. Bar-Yam;S. T. Pantelides.
Physical Review B (1989)

651 Citations

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald.
Applied Physics Letters (2000)

563 Citations

Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt

Yeliang Wang;Linfei Li;Wei Yao;Shiru Song.
Nano Letters (2015)

518 Citations

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