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Daniel M. Fleetwood

Daniel M. Fleetwood

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
95
Citations
28824
World Ranking
242
National Ranking
123

Materials Science

D-Index
96
Citations
29509
World Ranking
1293
National Ranking
415

Physics

D-Index
96
Citations
29802
World Ranking
1887
National Ranking
976

Research.com Recognitions

  • 2019 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2001 - Fellow of American Physical Society (APS) Citation For important and broadbased contributions to the understanding of radiation effects and lowfrequency noise in microelectronic materials and devices
  • 1997 - IEEE Fellow For contributions to the field of electronic devices and materials.

Overview

Daniel M. Fleetwood is affiliated with Vanderbilt University in the United States. Their primary field of study is Engineering, with a focus on Electrical and Electronic Engineering. The research work encompasses a range of specialized subfields, including Condensed Matter Physics, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Materials Chemistry.

The core topics covered in their research include Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Radiation Effects in Electronics, GaN-based semiconductor devices and materials, Integrated Circuits and Semiconductor Failure Analysis, Ga2O3 and related materials, and Radio Frequency Integrated Circuit Design.

Notable recent publications by Daniel M. Fleetwood include:

  • "Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies" (2020) in IEEE Transactions on Nuclear Science
  • "Radiation Effects in a Post-Moore World" (2021) in IEEE Transactions on Nuclear Science
  • "Radiation Effects in AlGaN/GaN HEMTs" (2022) in IEEE Transactions on Nuclear Science

Frequently collaborating co-authors include Ronald D. Schrimpf, En Xia Zhang, Robert A. Reed, Sokrates T. Pantelides, and Michael L. Alles.

The most common publication venues for their work are:

  • IEEE Transactions on Nuclear Science
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • Journal of Applied Physics
  • IEEE Transactions on Device and Materials Reliability

Daniel M. Fleetwood has received several awards throughout their career, including being named a Fellow of the American Association for the Advancement of Science (AAAS) in 2019. They were also recognized as a Fellow of the American Physical Society (APS) in 2001 for contributions to the understanding of radiation effects and low-frequency noise in microelectronic materials and devices. Earlier, in 1997, they became an IEEE Fellow for contributions to the field of electronic devices and materials.

Best Publications

  • Radiation Effects in MOS Oxides

    J.R. Schwank;M.R. Shaneyfelt;D.M. Fleetwood;J.A. Felix

  • Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

    D. M. Fleetwood;P. S. Winokur;R. A. Reber;T. L. Meisenheimer

  • 'Border traps' in MOS devices

    D.M. Fleetwood

  • Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

    D. M. Fleetwood

  • Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

    D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf

  • Physical model for enhanced interface-trap formation at low dose rates

    S.N. Rashkeev;C.R. Cirba;D.M. Fleetwood;R.D. Schrimpf

  • An overview of high-temperature electronic device technologies and potential applications

    P.L. Dreike;D.M. Fleetwood;D.B. King;D.C. Sprauer

  • Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments

    D.M. Fleetwood;P.S. Winokur;J.R. Schwank

  • 1/f noise and radiation effects in MOS devices

    D.M. Fleetwood;T.L. Meisenheimer;J.H. Scofield

  • Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices

    M.R. Shaneyfelt;D.M. Fleetwood;J.R. Schwank;K.L. Hughes

  • Defect generation by hydrogen at the Si- SiO(2) interface.

    S. N. Rashkeev;D. M. Fleetwood;R. D. Schrimpf;S. T. Pantelides;S. T. Pantelides

  • Charge separation for bipolar transistors

    S.L. Kosier;R.D. Shrimpf;R.N. Nowlin;D.M. Fleetwood

  • Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2.

    Zhong-Yi Lu;C. J. Nicklaw;D. M. Fleetwood;R. D. Schrimpf

  • Border traps: issues for MOS radiation response and long-term reliability

    D.M. Fleetwood;M.R. Shaneyfelt;W.L. Warren;J.R. Schwank

  • ELDRS in Bipolar Linear Circuits: A Review

    R.L. Pease;R.D. Schrimpf;D.M. Fleetwood

  • Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

    D.M. Fleetwood;H.D. Xiong;Z.-Y. Lu;C.J. Nicklaw

  • Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides

    D.M. Fleetwood;L.C. Riewe;J.R. Schwank;S.C. Witczak

  • Non-volatile memory device based on mobile protons in SiO 2 thin films

    K. Vanheusden;W. L. Warren;R. A. B. Devine;D. M. Fleetwood

  • Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors.

    D. M. Fleetwood;John H. Scofield

  • Trends in the total-dose response of modern bipolar transistors

    S.L. Kosier;W.E. Combs;A. Wei;R.A. Schrimpf

Frequent Co-Authors

Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
P.S. Winokur
P.S. Winokur Sandia National Laboratories
J.R. Schwank
J.R. Schwank Sandia National Laboratories
William L. Warren
William L. Warren Sanofi Pasteur
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
Kenneth F. Galloway
Kenneth F. Galloway Vanderbilt University

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