The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Daniel M. Fleetwood sits on this spectrum.
This scientist: 730 publications — 95th percentile
95% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Daniel M. Fleetwood sits on this spectrum.
This scientist: 95 D-Index — 97th percentile
97% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Daniel M. Fleetwood is affiliated with Vanderbilt University in the United States. Their primary field of study is Engineering, with a focus on Electrical and Electronic Engineering. The research work encompasses a range of specialized subfields, including Condensed Matter Physics, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Materials Chemistry.
The core topics covered in their research include Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Radiation Effects in Electronics, GaN-based semiconductor devices and materials, Integrated Circuits and Semiconductor Failure Analysis, Ga2O3 and related materials, and Radio Frequency Integrated Circuit Design.
Notable recent publications by Daniel M. Fleetwood include:
Frequently collaborating co-authors include Ronald D. Schrimpf, En Xia Zhang, Robert A. Reed, Sokrates T. Pantelides, and Michael L. Alles.
The most common publication venues for their work are:
Daniel M. Fleetwood has received several awards throughout their career, including being named a Fellow of the American Association for the Advancement of Science (AAAS) in 2019. They were also recognized as a Fellow of the American Physical Society (APS) in 2001 for contributions to the understanding of radiation effects and low-frequency noise in microelectronic materials and devices. Earlier, in 1997, they became an IEEE Fellow for contributions to the field of electronic devices and materials.
J.R. Schwank;M.R. Shaneyfelt;D.M. Fleetwood;J.A. Felix
D. M. Fleetwood;P. S. Winokur;R. A. Reber;T. L. Meisenheimer
D.M. Fleetwood
D. M. Fleetwood
D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf
S.N. Rashkeev;C.R. Cirba;D.M. Fleetwood;R.D. Schrimpf
P.L. Dreike;D.M. Fleetwood;D.B. King;D.C. Sprauer
D.M. Fleetwood;P.S. Winokur;J.R. Schwank
D.M. Fleetwood;T.L. Meisenheimer;J.H. Scofield
M.R. Shaneyfelt;D.M. Fleetwood;J.R. Schwank;K.L. Hughes
S. N. Rashkeev;D. M. Fleetwood;R. D. Schrimpf;S. T. Pantelides;S. T. Pantelides
S.L. Kosier;R.D. Shrimpf;R.N. Nowlin;D.M. Fleetwood
Zhong-Yi Lu;C. J. Nicklaw;D. M. Fleetwood;R. D. Schrimpf
D.M. Fleetwood;M.R. Shaneyfelt;W.L. Warren;J.R. Schwank
R.L. Pease;R.D. Schrimpf;D.M. Fleetwood
D.M. Fleetwood;H.D. Xiong;Z.-Y. Lu;C.J. Nicklaw
D.M. Fleetwood;L.C. Riewe;J.R. Schwank;S.C. Witczak
K. Vanheusden;W. L. Warren;R. A. B. Devine;D. M. Fleetwood
D. M. Fleetwood;John H. Scofield
S.L. Kosier;W.E. Combs;A. Wei;R.A. Schrimpf
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