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Daniel M. Fleetwood

Daniel M. Fleetwood

Vanderbilt University
United States

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 95 242 235 124 117 730 28824
Materials Science 96 1292 1239 413 385 713 29509
Physics 96 1887 1792 976 911 739 29802

Daniel M. Fleetwood publications per year

The chart shows the history of publications by Daniel M. Fleetwood between 1982 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Daniel M. Fleetwood published across 44 years, from 1982 to 2025, averaging 17.7 papers a year. Output peaked at 33 publications in 2008. 25 of the 777 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1982 to 2025. Vertical axis: number of publications, 0 to 33. Peak 33 publications in 2008. 1982: 1 publication 1983: 3 publications 1984: 2 publications 1985: 6 publications 1986: 8 publications 1987: 11 publications 1988: 10 publications 1989: 10 publications 1990: 14 publications 1991: 14 publications 1992: 16 publications 1993: 22 publications 1994: 26 publications 1995: 13 publications 1996: 13 publications 1997: 26 publications 1998: 21 publications 1999: 13 publications 2000: 16 publications 2001: 7 publications 2002: 19 publications 2003: 28 publications 2004: 28 publications 2005: 11 publications 2006: 20 publications 2007: 25 publications 2008: 33 publications 2009: 16 publications 2010: 23 publications 2011: 29 publications 2012: 20 publications 2013: 27 publications 2014: 22 publications 2015: 29 publications 2016: 15 publications 2017: 30 publications 2018: 28 publications 2019: 23 publications 2020: 16 publications 2021: 18 publications 2022: 14 publications 2023: 26 publications 2024: 14 publications 2025: 11 publications
1982 2025

777 publications in total across all disciplines

View publications per year as a table
Daniel M. Fleetwood: publications per year, 1982 to 2025
Year Publications
1982 1
1983 3
1984 2
1985 6
1986 8
1987 11
1988 10
1989 10
1990 14
1991 14
1992 16
1993 22
1994 26
1995 13
1996 13
1997 26
1998 21
1999 13
2000 16
2001 7
2002 19
2003 28
2004 28
2005 11
2006 20
2007 25
2008 33
2009 16
2010 23
2011 29
2012 20
2013 27
2014 22
2015 29
2016 15
2017 30
2018 28
2019 23
2020 16
2021 18
2022 14
2023 26
2024 14
2025 11
Total 777
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Daniel M. Fleetwood publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Daniel M. Fleetwood sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 714–733 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 730 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28 730
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Daniel M. Fleetwood D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Daniel M. Fleetwood sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 95 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 95 D-Index — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10 95
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 2019 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2001 - Fellow of American Physical Society (APS) Citation For important and broadbased contributions to the understanding of radiation effects and lowfrequency noise in microelectronic materials and devices
  • 1997 - IEEE Fellow For contributions to the field of electronic devices and materials.

Overview

Daniel M. Fleetwood is affiliated with Vanderbilt University in the United States. Their primary field of study is Engineering, with a focus on Electrical and Electronic Engineering. The research work encompasses a range of specialized subfields, including Condensed Matter Physics, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Materials Chemistry.

The core topics covered in their research include Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Radiation Effects in Electronics, GaN-based semiconductor devices and materials, Integrated Circuits and Semiconductor Failure Analysis, Ga2O3 and related materials, and Radio Frequency Integrated Circuit Design.

Notable recent publications by Daniel M. Fleetwood include:

  • "Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies" (2020) in IEEE Transactions on Nuclear Science
  • "Radiation Effects in a Post-Moore World" (2021) in IEEE Transactions on Nuclear Science
  • "Radiation Effects in AlGaN/GaN HEMTs" (2022) in IEEE Transactions on Nuclear Science

Frequently collaborating co-authors include Ronald D. Schrimpf, En Xia Zhang, Robert A. Reed, Sokrates T. Pantelides, and Michael L. Alles.

The most common publication venues for their work are:

  • IEEE Transactions on Nuclear Science
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • Journal of Applied Physics
  • IEEE Transactions on Device and Materials Reliability

Daniel M. Fleetwood has received several awards throughout their career, including being named a Fellow of the American Association for the Advancement of Science (AAAS) in 2019. They were also recognized as a Fellow of the American Physical Society (APS) in 2001 for contributions to the understanding of radiation effects and low-frequency noise in microelectronic materials and devices. Earlier, in 1997, they became an IEEE Fellow for contributions to the field of electronic devices and materials.

Best Publications

  • Radiation Effects in MOS Oxides

    J.R. Schwank;M.R. Shaneyfelt;D.M. Fleetwood;J.A. Felix

  • Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

    D. M. Fleetwood;P. S. Winokur;R. A. Reber;T. L. Meisenheimer

  • 'Border traps' in MOS devices

    D.M. Fleetwood

  • Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

    D. M. Fleetwood

  • Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

    D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf

  • Physical model for enhanced interface-trap formation at low dose rates

    S.N. Rashkeev;C.R. Cirba;D.M. Fleetwood;R.D. Schrimpf

  • An overview of high-temperature electronic device technologies and potential applications

    P.L. Dreike;D.M. Fleetwood;D.B. King;D.C. Sprauer

  • Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments

    D.M. Fleetwood;P.S. Winokur;J.R. Schwank

  • 1/f noise and radiation effects in MOS devices

    D.M. Fleetwood;T.L. Meisenheimer;J.H. Scofield

  • Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices

    M.R. Shaneyfelt;D.M. Fleetwood;J.R. Schwank;K.L. Hughes

  • Defect generation by hydrogen at the Si- SiO(2) interface.

    S. N. Rashkeev;D. M. Fleetwood;R. D. Schrimpf;S. T. Pantelides;S. T. Pantelides

  • Charge separation for bipolar transistors

    S.L. Kosier;R.D. Shrimpf;R.N. Nowlin;D.M. Fleetwood

  • Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2.

    Zhong-Yi Lu;C. J. Nicklaw;D. M. Fleetwood;R. D. Schrimpf

  • Border traps: issues for MOS radiation response and long-term reliability

    D.M. Fleetwood;M.R. Shaneyfelt;W.L. Warren;J.R. Schwank

  • ELDRS in Bipolar Linear Circuits: A Review

    R.L. Pease;R.D. Schrimpf;D.M. Fleetwood

  • Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

    D.M. Fleetwood;H.D. Xiong;Z.-Y. Lu;C.J. Nicklaw

  • Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides

    D.M. Fleetwood;L.C. Riewe;J.R. Schwank;S.C. Witczak

  • Non-volatile memory device based on mobile protons in SiO 2 thin films

    K. Vanheusden;W. L. Warren;R. A. B. Devine;D. M. Fleetwood

  • Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors.

    D. M. Fleetwood;John H. Scofield

  • Trends in the total-dose response of modern bipolar transistors

    S.L. Kosier;W.E. Combs;A. Wei;R.A. Schrimpf

Frequent Co-Authors

Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
P.S. Winokur
P.S. Winokur Sandia National Laboratories
J.R. Schwank
J.R. Schwank Sandia National Laboratories
William L. Warren
William L. Warren Sanofi Pasteur
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
Kenneth F. Galloway
Kenneth F. Galloway Vanderbilt University

External Links

Wikipedia of Daniel M. Fleetwood Personal website of Daniel M. Fleetwood Google Scholar page

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Best Scientists Citing Daniel M. Fleetwood

Ronald D. Schrimpf

Ronald D. Schrimpf

Vanderbilt University

Publications: 131

Alessandro Paccagnella

Alessandro Paccagnella

University of Padua

Publications: 110

John D. Cressler

John D. Cressler

Georgia Institute of Technology

Publications: 102

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 69

Robert A. Reed

Robert A. Reed

Vanderbilt University

Publications: 60

Hugh J. Barnaby

Hugh J. Barnaby

Arizona State University

Publications: 60

Sokrates T. Pantelides

Sokrates T. Pantelides

Vanderbilt University

Publications: 58

Cor Claeys

Cor Claeys

KU Leuven

Publications: 57

Marty R. Shaneyfelt

Marty R. Shaneyfelt

Sandia National Laboratories

Publications: 57

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 53

Tibor Grasser

Tibor Grasser

TU Wien

Publications: 53

Fan Ren

Fan Ren

University of Florida

Publications: 46

Kenneth F. Galloway

Kenneth F. Galloway

Vanderbilt University

Publications: 45

R.L. Pease

R.L. Pease

Independent Scientist / Consultant, US

Publications: 45

P. Paillet

P. Paillet

French Alternative Energies and Atomic Energy Commission (CEA)

Publications: 43

Robert A. Weller

Robert A. Weller

Woods Hole Oceanographic Institution

Publications: 41

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