What is he best known for?
The fields of study he is best known for:
- Quantum mechanics
- Electron
- Semiconductor
His primary scientific interests are in Optoelectronics, Irradiation, Transistor, Oxide and Semiconductor device.
The concepts of his Optoelectronics study are interwoven with issues in Electronic engineering, Bipolar junction transistor and Capacitor.
His studies in Irradiation integrate themes in fields like Radiation, Annealing, Proton and Atomic physics.
His research investigates the link between Transistor and topics such as Noise that cross with problems in Scattering.
His Oxide study integrates concerns from other disciplines, such as Radiation response, Electric field, Molecular physics, Analytical chemistry and Electrical engineering.
As a part of the same scientific study, he usually deals with the Semiconductor device, concentrating on Radiation hardening and frequently concerns with Dosimetry and Reliability engineering.
His most cited work include:
- Radiation Effects in MOS Oxides (439 citations)
- Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices (368 citations)
- 'Border traps' in MOS devices (269 citations)
What are the main themes of his work throughout his whole career to date?
Daniel M. Fleetwood mainly focuses on Optoelectronics, Irradiation, Transistor, Annealing and Oxide.
His work in Optoelectronics tackles topics such as Threshold voltage which are related to areas like Transconductance.
He interconnects Semiconductor device, Dielectric, Radiation, Electronic engineering and Proton in the investigation of issues within Irradiation.
The various areas that he examines in his Transistor study include Radiation hardening and CMOS.
His research in Annealing focuses on subjects like Hydrogen, which are connected to Passivation and Chemical physics.
His research integrates issues of Molecular physics, Electron paramagnetic resonance, Electric field and Analytical chemistry in his study of Oxide.
He most often published in these fields:
- Optoelectronics (59.90%)
- Irradiation (38.33%)
- Transistor (24.15%)
What were the highlights of his more recent work (between 2013-2021)?
- Optoelectronics (59.90%)
- Irradiation (38.33%)
- Transistor (24.15%)
In recent papers he was focusing on the following fields of study:
His scientific interests lie mostly in Optoelectronics, Irradiation, Transistor, Absorbed dose and Threshold voltage.
Particularly relevant to Dielectric is his body of work in Optoelectronics.
His Irradiation research is multidisciplinary, relying on both Molecular physics, Annealing, Proton and Voltage.
His study in Annealing is interdisciplinary in nature, drawing from both Hydrogen and Piezoresistive effect.
His work carried out in the field of Transistor brings together such families of science as Oxide, CMOS, Electric field, Ionization and Electron.
His Absorbed dose study combines topics from a wide range of disciplines, such as Silicon on insulator, Silicon, Doping and Shallow trench isolation.
Between 2013 and 2021, his most popular works were:
- $1/f$ Noise and Defects in Microelectronic Materials and Devices (91 citations)
- Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs (42 citations)
- Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (41 citations)
In his most recent research, the most cited papers focused on:
- Quantum mechanics
- Electron
- Semiconductor
Daniel M. Fleetwood mainly focuses on Optoelectronics, Irradiation, Transistor, Threshold voltage and Dielectric.
His study of Wide-bandgap semiconductor is a part of Optoelectronics.
His Irradiation research includes elements of Silicon, Annealing and Proton.
The study incorporates disciplines such as Oxide, Scattering and Resilience in addition to Transistor.
Daniel M. Fleetwood combines subjects such as Electronic engineering, Gate dielectric and Capacitor with his study of Dielectric.
His Electronic engineering research is multidisciplinary, relying on both PMOS logic and Electronic circuit.
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