2019 - Fellow of the American Association for the Advancement of Science (AAAS)
2001 - Fellow of American Physical Society (APS) Citation For important and broadbased contributions to the understanding of radiation effects and lowfrequency noise in microelectronic materials and devices
1997 - IEEE Fellow For contributions to the field of electronic devices and materials.
His primary scientific interests are in Optoelectronics, Irradiation, Transistor, Oxide and Semiconductor device. The concepts of his Optoelectronics study are interwoven with issues in Electronic engineering, Bipolar junction transistor and Capacitor. His studies in Irradiation integrate themes in fields like Radiation, Annealing, Proton and Atomic physics.
His research investigates the link between Transistor and topics such as Noise that cross with problems in Scattering. His Oxide study integrates concerns from other disciplines, such as Radiation response, Electric field, Molecular physics, Analytical chemistry and Electrical engineering. As a part of the same scientific study, he usually deals with the Semiconductor device, concentrating on Radiation hardening and frequently concerns with Dosimetry and Reliability engineering.
Daniel M. Fleetwood mainly focuses on Optoelectronics, Irradiation, Transistor, Annealing and Oxide. His work in Optoelectronics tackles topics such as Threshold voltage which are related to areas like Transconductance. He interconnects Semiconductor device, Dielectric, Radiation, Electronic engineering and Proton in the investigation of issues within Irradiation.
The various areas that he examines in his Transistor study include Radiation hardening and CMOS. His research in Annealing focuses on subjects like Hydrogen, which are connected to Passivation and Chemical physics. His research integrates issues of Molecular physics, Electron paramagnetic resonance, Electric field and Analytical chemistry in his study of Oxide.
His scientific interests lie mostly in Optoelectronics, Irradiation, Transistor, Absorbed dose and Threshold voltage. Particularly relevant to Dielectric is his body of work in Optoelectronics. His Irradiation research is multidisciplinary, relying on both Molecular physics, Annealing, Proton and Voltage.
His study in Annealing is interdisciplinary in nature, drawing from both Hydrogen and Piezoresistive effect. His work carried out in the field of Transistor brings together such families of science as Oxide, CMOS, Electric field, Ionization and Electron. His Absorbed dose study combines topics from a wide range of disciplines, such as Silicon on insulator, Silicon, Doping and Shallow trench isolation.
Daniel M. Fleetwood mainly focuses on Optoelectronics, Irradiation, Transistor, Threshold voltage and Dielectric. His study of Wide-bandgap semiconductor is a part of Optoelectronics. His Irradiation research includes elements of Silicon, Annealing and Proton.
The study incorporates disciplines such as Oxide, Scattering and Resilience in addition to Transistor. Daniel M. Fleetwood combines subjects such as Electronic engineering, Gate dielectric and Capacitor with his study of Dielectric. His Electronic engineering research is multidisciplinary, relying on both PMOS logic and Electronic circuit.
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Radiation Effects in MOS Oxides
J.R. Schwank;M.R. Shaneyfelt;D.M. Fleetwood;J.A. Felix.
IEEE Transactions on Nuclear Science (2008)
Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices
D. M. Fleetwood;P. S. Winokur;R. A. Reber;T. L. Meisenheimer.
Journal of Applied Physics (1993)
'Border traps' in MOS devices
IEEE Transactions on Nuclear Science (1992)
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf.
IEEE Transactions on Nuclear Science (1994)
Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices
D. M. Fleetwood.
IEEE Transactions on Nuclear Science (2013)
Physical model for enhanced interface-trap formation at low dose rates
S.N. Rashkeev;C.R. Cirba;D.M. Fleetwood;R.D. Schrimpf.
IEEE Transactions on Nuclear Science (2002)
Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
D.M. Fleetwood;P.S. Winokur;J.R. Schwank.
IEEE Transactions on Nuclear Science (1988)
1/f noise and radiation effects in MOS devices
D.M. Fleetwood;T.L. Meisenheimer;J.H. Scofield.
IEEE Transactions on Electron Devices (1994)
An overview of high-temperature electronic device technologies and potential applications
P.L. Dreike;D.M. Fleetwood;D.B. King;D.C. Sprauer.
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A (1994)
Charge separation for bipolar transistors
S.L. Kosier;R.D. Shrimpf;R.N. Nowlin;D.M. Fleetwood.
IEEE Transactions on Nuclear Science (1993)
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