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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
8991
World Ranking
3692
National Ranking
61

Research.com Recognitions

  • 2018 - IEEE Fellow For contributions to the understanding of radiation effects in electronics

Best Publications

  • Radiation Effects in MOS Oxides

    J.R. Schwank;M.R. Shaneyfelt;D.M. Fleetwood;J.A. Felix

  • Radiation effects in SOI technologies

    J.R. Schwank;V. Ferlet-Cavrois;M.R. Shaneyfelt;P. Paillet

  • Overview of radiation induced point defects in silica-based optical fibers

    Sylvain Girard;Antonino Alessi;Nicolas Richard;Layla Martin-Samos

  • Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

    V. Ferlet-Cavrois;P. Paillet;M. Gaillardin;D. Lambert

  • Worst-case bias during total dose irradiation of SOI transistors

    V. Ferlet-Cavrois;T. Colladant;P. Paillet;J.L. Leray

  • New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening

    V. Ferlet-Cavrois;P. Paillet;D. McMorrow;N. Fel

  • Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

    P.E. Dodd;J.R. Schwank;M.R. Shaneyfelt;J.A. Felix

  • Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

    E. Simoen;M. Gaillardin;P. Paillet;R. A. Reed

  • Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

    V. Ferlet-Cavrois;P. Paillet;D. McMorrow;A. Torres

  • Comparison of charge yield in MOS devices for different radiation sources

    P. Paillet;J.R. Schwank;M.R. Shaneyfelt;V. Ferlet-Cavrois

  • Effects of particle energy on proton-induced single-event latchup

    J.R. Schwank;M.R. Shaneyfelt;J. Baggio;P.E. Dodd

  • Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

    V.F. Cavrois;V. Pouget;D. McMorrow;J.R. Schwank

  • Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

    V. Goiffon;M. Estribeau;O. Marcelot;P. Cervantes

  • Proton- and Gamma-Induced Effects on Erbium-Doped Optical Fibers

    S. Girard;B. Tortech;E. Regnier;M. Van Uffelen

  • Total Ionizing Dose Effects on Triple-Gate FETs

    M. Gaillardin;P. Paillet;V. Ferlet-Cavrois;O. Faynot

  • Radiation Effects on Silica-Based Preforms and Optical Fibers—I: Experimental Study With Canonical Samples

    S. Girard;Y. Ouerdane;G. Origlio;C. Marcandella

  • Combined High Dose and Temperature Radiation Effects on Multimode Silica-Based Optical Fibers

    S. Girard;C. Marcandella;A. Morana;J. Perisse

  • Modeling Single Event Transients in Advanced Devices and ICs

    L. Artola;M. Gaillardin;G. Hubert;M. Raine

  • Enhanced Radiation-Induced Narrow Channel Effects in Commercial ${\hbox {0.18}}~\mu$ m Bulk Technology

    M. Gaillardin;V. Goiffon;S. Girard;M. Martinez

  • Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

    M Raine;G Hubert;M Gaillardin;L Artola

  • Total ionizing dose effects on deca-nanometer fully depleted SOI devices

    P. Paillet;M. Gaillardin;V. Ferlet-Cavrois;A. Torres

Frequent Co-Authors

Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
J.R. Schwank
J.R. Schwank Sandia National Laboratories
Sylvain Girard
Sylvain Girard Jean Monnet University
Paul E. Dodd
Paul E. Dodd Sandia National Laboratories
O. Faynot
O. Faynot CEA LETI
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Daniela Munteanu
Daniela Munteanu Aix-Marseille University

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