The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Bharat L. Bhuva sits on this spectrum.
This scientist: 326 publications — 63rd percentile
63% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Bharat L. Bhuva sits on this spectrum.
This scientist: 50 D-Index — 60th percentile
60% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Bharat L. Bhuva is affiliated with Vanderbilt University in the United States and has contributed extensively to the field of engineering, with a focus on electrical and electronic engineering. Their research spans over numerous subfields, including hardware and architecture, food science, molecular biology, and radiation.
Their scholarly output includes a significant number of publications in prominent venues. The most frequent publication outlet is the IEEE Transactions on Nuclear Science, with 32 papers. Other venues include the 2022 IEEE International Reliability Physics Symposium (IRPS), Food Bioscience, Microelectronics Reliability, and the Journal of Food Science.
Bhuva's research primarily addresses topics related to radiation effects in electronics, semiconductor materials and devices, and integrated circuits and semiconductor failure analysis. Additional areas of work involve VLSI and analog circuit testing, advancements in semiconductor devices and circuit design, low-power high-performance VLSI design, and physical unclonable functions (PUFs) and hardware security.
Notable recent papers include:
Frequent collaborators in their research include Yoni Xiong, Dennis R. Ball, Nicholas J. Pieper, Rita Fung, and Shi-Jie Wen. These coauthors have worked alongside Bhuva in a variety of studies related to radiation effects and semiconductor device reliability.
O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva
B. Narasimham;B.L. Bhuva;R.D. Schrimpf;L.W. Massengill
J.R. Ahlbin;L.W. Massengill;B.L. Bhuva;B. Narasimham
N. N. Mahatme;S. Jagannathan;T. D. Loveless;L. W. Massengill
A. Balasubramanian;B.L. Bhuva;J.D. Black;L.W. Massengill
T D Loveless;S Jagannathan;T Reece;J Chetia
B. Narasimham;V. Ramachandran;B.L. Bhuva;R.D. Schrimpf
O.A. Amusan;L.W. Massengill;M.P. Baze;A.L. Sternberg
T.D. Loveless;L.W. Massengill;B.L. Bhuva;W.T. Holman
O.A. Amusan;L.W. Massengill;M.P. Baze;B.L. Bhuva
J.D. Black;A.L. Sternberg;M.L. Alles;A.F. Witulski
L.W. Massengill;A.E. Baranski;D.O. Van Nort;J. Meng
T.D. Loveless;L.W. Massengill;B.L. Bhuva;W.T. Holman
O.A. Amusan;L.W. Massengill;B.L. Bhuva;S. DasGupta
B.D. Olson;O.A. Amusan;S. Dasgupta;L.W. Massengill
S. DasGupta;A.F. Witulski;B.L. Bhuva;M.L. Alles
J R Ahlbin;M J Gadlage;D R Ball;A W Witulski
N M Atkinson;A F Witulski;W T Holman;J R Ahlbin
M J Gadlage;J R Ahlbin;B Narasimham;B L Bhuva
K. Lilja;M. Bounasser;S.-J Wen;R. Wong
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