World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
11969
World Ranking
1982
National Ranking
778

Paul E. Dodd publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Paul E. Dodd sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 178 publications — 22nd percentile

22% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Paul E. Dodd D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Paul E. Dodd sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2010 - IEEE Fellow For contributions to the understanding and simulation of single-event effects in microelectronics

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Electron
  • Integrated circuit

Electrical engineering, Upset, Electronic engineering, Silicon on insulator and Single event upset are his primary areas of study. His biological study deals with issues like Optoelectronics, which deal with fields such as Threshold voltage and Voltage. His research investigates the connection with Upset and areas like CMOS which intersect with concerns in Radiation hardening.

In his research, Microelectronics is intimately related to Integrated circuit, which falls under the overarching field of Electronic engineering. His Silicon on insulator research incorporates themes from Electronic circuit, Computational physics, Radiation, Irradiation and Transistor. His work in Single event upset covers topics such as Ionization which are related to areas like Nuclear physics, Atomic physics, Proton and Nuclear reaction.

His most cited work include:

  • Basic mechanisms and modeling of single-event upset in digital microelectronics (807 citations)
  • Radiation Effects in MOS Oxides (439 citations)
  • Radiation effects in SOI technologies (315 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Electrical engineering, Silicon on insulator, Electronic engineering and Upset. His study in Optoelectronics is interdisciplinary in nature, drawing from both Radiation hardening, Radiation, Irradiation and Transistor. His Silicon on insulator research incorporates elements of Field-effect transistor and Laser.

In the subject of general Electronic engineering, his work in CMOS and Soft error is often linked to Fabrication and Oxide, thereby combining diverse domains of study. The concepts of his Upset study are interwoven with issues in Computational physics, Reliability engineering, Charged particle, Nuclear physics and Static random-access memory. His Single event upset research includes themes of Snapback and Silicon-germanium.

He most often published in these fields:

  • Optoelectronics (43.90%)
  • Electrical engineering (31.71%)
  • Silicon on insulator (25.00%)

What were the highlights of his more recent work (between 2010-2020)?

  • Optoelectronics (43.90%)
  • Radiation (18.29%)
  • Silicon on insulator (25.00%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Radiation, Silicon on insulator, Atomic physics and Upset. His Optoelectronics study integrates concerns from other disciplines, such as Characterization, Memristor and Microbeam. The study incorporates disciplines such as Gamma ray and Resistive random-access memory in addition to Radiation.

Paul E. Dodd has researched Atomic physics in several fields, including Ionization, Irradiation and Proton. The Upset study combines topics in areas such as Single event upset, Electronic engineering and Static random-access memory. His work deals with themes such as Microelectronics and Integrated circuit, which intersect with Radiation hardening.

Between 2010 and 2020, his most popular works were:

  • Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance (106 citations)
  • Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction (66 citations)
  • Initial Assessment of the Effects of Radiation on the Electrical Characteristics of ${ m TaO}_{ m x}$ Memristive Memories (55 citations)

In his most recent research, the most cited papers focused on:

  • Electron
  • Electrical engineering
  • Semiconductor

His primary scientific interests are in Upset, Atomic physics, Radiation, Ionization and Proton. His Upset research incorporates themes from Electronic engineering, Static random-access memory and Nuclear physics. His Electronic engineering research includes elements of Characterization and Charge sharing.

His studies in Nuclear physics integrate themes in fields like Single event upset and Electronic circuit. Paul E. Dodd combines subjects such as Nanotechnology and Irradiation with his study of Radiation. His Ionization research focuses on Silicon on insulator and how it relates to Beam and Shielded cable.

Best Publications

  • Basic mechanisms and modeling of single-event upset in digital microelectronics

    P.E. Dodd;L.W. Massengill

  • Radiation Effects in MOS Oxides

    J.R. Schwank;M.R. Shaneyfelt;D.M. Fleetwood;J.A. Felix

  • Radiation effects in SOI technologies

    J.R. Schwank;V. Ferlet-Cavrois;M.R. Shaneyfelt;P. Paillet

  • Production and propagation of single-event transients in high-speed digital logic ICs

    P.E. Dodd;M.R. Shaneyfelt;J.A. Felix;J.R. Schwank

  • Current and Future Challenges in Radiation Effects on CMOS Electronics

    P E Dodd;M R Shaneyfelt;J R Schwank;J A Felix

  • Challenges in hardening technologies using shallow-trench isolation

    M.R. Shaneyfelt;P.E. Dodd;B.L. Draper;R.S. Flores

  • SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

    P.E. Dodd;A.R. Shaneyfelt;K.M. Horn;D.S. Walsh

  • Critical charge concepts for CMOS SRAMs

    P.E. Dodd;F.W. Sexton

  • Device simulation of charge collection and single-event upset

    P.E. Dodd

  • Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance

    J. R. Schwank;M. R. Shaneyfelt;P. E. Dodd

  • Heavy ion-induced digital single-event transients in deep submicron Processes

    J. Benedetto;P. Eaton;K. Avery;D. Mavis

  • Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

    D.F. Heidel;P.W. Marshall;J.A. Pellish;K.P. Rodbell

  • Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction

    J. D. Black;P. E. Dodd;K. M. Warren

  • Impact of technology trends on SEU in CMOS SRAMs

    P.E. Dodd;F.W. Sexton;G.L. Hash;M.R. Shaneyfelt

  • Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

    D.F. Heidel;P.W. Marshall;K.A. LaBel;J.R. Schwank

  • Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

    P.E. Dodd;F.W. Sexton;P.S. Winokur

  • New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening

    V. Ferlet-Cavrois;P. Paillet;D. McMorrow;N. Fel

  • Impact of Ion Energy and Species on Single Event Effects Analysis

    R.A. Reed;R.A. Weller;M.H. Mendenhall;J.-M. Lauenstein

  • Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

    P.E. Dodd;J.R. Schwank;M.R. Shaneyfelt;J.A. Felix

  • Single event gate rupture in thin gate oxides

    F.W. Sexton;D.M. Fleetwood;M.R. Shaneyfelt;P.E. Dodd

Frequent Co-Authors

Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
J.R. Schwank
J.R. Schwank Sandia National Laboratories
Robert A. Reed
Robert A. Reed Vanderbilt University
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
F.W. Sexton
F.W. Sexton Sandia National Laboratories
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
John D. Cressler
John D. Cressler Georgia Institute of Technology

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