Electrical engineering, Upset, Electronic engineering, Silicon on insulator and Single event upset are his primary areas of study. His biological study deals with issues like Optoelectronics, which deal with fields such as Threshold voltage and Voltage. His research investigates the connection with Upset and areas like CMOS which intersect with concerns in Radiation hardening.
In his research, Microelectronics is intimately related to Integrated circuit, which falls under the overarching field of Electronic engineering. His Silicon on insulator research incorporates themes from Electronic circuit, Computational physics, Radiation, Irradiation and Transistor. His work in Single event upset covers topics such as Ionization which are related to areas like Nuclear physics, Atomic physics, Proton and Nuclear reaction.
His primary areas of investigation include Optoelectronics, Electrical engineering, Silicon on insulator, Electronic engineering and Upset. His study in Optoelectronics is interdisciplinary in nature, drawing from both Radiation hardening, Radiation, Irradiation and Transistor. His Silicon on insulator research incorporates elements of Field-effect transistor and Laser.
In the subject of general Electronic engineering, his work in CMOS and Soft error is often linked to Fabrication and Oxide, thereby combining diverse domains of study. The concepts of his Upset study are interwoven with issues in Computational physics, Reliability engineering, Charged particle, Nuclear physics and Static random-access memory. His Single event upset research includes themes of Snapback and Silicon-germanium.
His main research concerns Optoelectronics, Radiation, Silicon on insulator, Atomic physics and Upset. His Optoelectronics study integrates concerns from other disciplines, such as Characterization, Memristor and Microbeam. The study incorporates disciplines such as Gamma ray and Resistive random-access memory in addition to Radiation.
Paul E. Dodd has researched Atomic physics in several fields, including Ionization, Irradiation and Proton. The Upset study combines topics in areas such as Single event upset, Electronic engineering and Static random-access memory. His work deals with themes such as Microelectronics and Integrated circuit, which intersect with Radiation hardening.
His primary scientific interests are in Upset, Atomic physics, Radiation, Ionization and Proton. His Upset research incorporates themes from Electronic engineering, Static random-access memory and Nuclear physics. His Electronic engineering research includes elements of Characterization and Charge sharing.
His studies in Nuclear physics integrate themes in fields like Single event upset and Electronic circuit. Paul E. Dodd combines subjects such as Nanotechnology and Irradiation with his study of Radiation. His Ionization research focuses on Silicon on insulator and how it relates to Beam and Shielded cable.
P.E. Dodd;L.W. Massengill
J.R. Schwank;M.R. Shaneyfelt;D.M. Fleetwood;J.A. Felix
J.R. Schwank;V. Ferlet-Cavrois;M.R. Shaneyfelt;P. Paillet
P.E. Dodd;M.R. Shaneyfelt;J.A. Felix;J.R. Schwank
P E Dodd;M R Shaneyfelt;J R Schwank;J A Felix
M.R. Shaneyfelt;P.E. Dodd;B.L. Draper;R.S. Flores
P.E. Dodd;A.R. Shaneyfelt;K.M. Horn;D.S. Walsh
P.E. Dodd;F.W. Sexton
P.E. Dodd
J. R. Schwank;M. R. Shaneyfelt;P. E. Dodd
J. Benedetto;P. Eaton;K. Avery;D. Mavis
D.F. Heidel;P.W. Marshall;J.A. Pellish;K.P. Rodbell
J. D. Black;P. E. Dodd;K. M. Warren
P.E. Dodd;F.W. Sexton;G.L. Hash;M.R. Shaneyfelt
D.F. Heidel;P.W. Marshall;K.A. LaBel;J.R. Schwank
P.E. Dodd;F.W. Sexton;P.S. Winokur
V. Ferlet-Cavrois;P. Paillet;D. McMorrow;N. Fel
R.A. Reed;R.A. Weller;M.H. Mendenhall;J.-M. Lauenstein
P.E. Dodd;J.R. Schwank;M.R. Shaneyfelt;J.A. Felix
F.W. Sexton;D.M. Fleetwood;M.R. Shaneyfelt;P.E. Dodd
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